DE69026229T2 - Verfahren zum Laser-Durchbrennen von Schmelzverbindungen beim Herstellen von integrierten Schaltungen - Google Patents

Verfahren zum Laser-Durchbrennen von Schmelzverbindungen beim Herstellen von integrierten Schaltungen

Info

Publication number
DE69026229T2
DE69026229T2 DE69026229T DE69026229T DE69026229T2 DE 69026229 T2 DE69026229 T2 DE 69026229T2 DE 69026229 T DE69026229 T DE 69026229T DE 69026229 T DE69026229 T DE 69026229T DE 69026229 T2 DE69026229 T2 DE 69026229T2
Authority
DE
Germany
Prior art keywords
manufacture
integrated circuits
laser blow
fused connections
fused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69026229T
Other languages
English (en)
Other versions
DE69026229D1 (de
Inventor
James D Chlipala
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of DE69026229D1 publication Critical patent/DE69026229D1/de
Application granted granted Critical
Publication of DE69026229T2 publication Critical patent/DE69026229T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
DE69026229T 1989-12-29 1990-11-29 Verfahren zum Laser-Durchbrennen von Schmelzverbindungen beim Herstellen von integrierten Schaltungen Expired - Fee Related DE69026229T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/459,168 US5021362A (en) 1989-12-29 1989-12-29 Laser link blowing in integrateed circuit fabrication

Publications (2)

Publication Number Publication Date
DE69026229D1 DE69026229D1 (de) 1996-05-02
DE69026229T2 true DE69026229T2 (de) 1996-09-05

Family

ID=23823684

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69026229T Expired - Fee Related DE69026229T2 (de) 1989-12-29 1990-11-29 Verfahren zum Laser-Durchbrennen von Schmelzverbindungen beim Herstellen von integrierten Schaltungen

Country Status (4)

Country Link
US (1) US5021362A (de)
EP (1) EP0435469B1 (de)
JP (1) JPH0652760B2 (de)
DE (1) DE69026229T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004032184B4 (de) * 2003-07-02 2013-05-23 Disco Corp. Laserstrahlbearbeitungsverfahren und Laserstrahlbearbeitungsmaschine bzw. -vorrichtung

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5886320A (en) * 1996-09-03 1999-03-23 International Business Machines Corporation Laser ablation with transmission matching for promoting energy coupling to a film stack
US5998759A (en) 1996-12-24 1999-12-07 General Scanning, Inc. Laser processing
US6025256A (en) * 1997-01-06 2000-02-15 Electro Scientific Industries, Inc. Laser based method and system for integrated circuit repair or reconfiguration
US6046429A (en) * 1997-06-12 2000-04-04 International Business Machines Corporation Laser repair process for printed wiring boards
US6057180A (en) * 1998-06-05 2000-05-02 Electro Scientific Industries, Inc. Method of severing electrically conductive links with ultraviolet laser output
US6300590B1 (en) * 1998-12-16 2001-10-09 General Scanning, Inc. Laser processing
US6387715B1 (en) * 1999-09-30 2002-05-14 Advanced Micro Devices, Inc. Integrated circuit defect detection via laser heat and IR thermography
US6281471B1 (en) * 1999-12-28 2001-08-28 Gsi Lumonics, Inc. Energy-efficient, laser-based method and system for processing target material
US7838794B2 (en) * 1999-12-28 2010-11-23 Gsi Group Corporation Laser-based method and system for removing one or more target link structures
US20040134894A1 (en) * 1999-12-28 2004-07-15 Bo Gu Laser-based system for memory link processing with picosecond lasers
US7723642B2 (en) * 1999-12-28 2010-05-25 Gsi Group Corporation Laser-based system for memory link processing with picosecond lasers
US7671295B2 (en) * 2000-01-10 2010-03-02 Electro Scientific Industries, Inc. Processing a memory link with a set of at least two laser pulses
US20030222324A1 (en) * 2000-01-10 2003-12-04 Yunlong Sun Laser systems for passivation or link processing with a set of laser pulses
US20060141681A1 (en) * 2000-01-10 2006-06-29 Yunlong Sun Processing a memory link with a set of at least two laser pulses
US6639177B2 (en) * 2001-03-29 2003-10-28 Gsi Lumonics Corporation Method and system for processing one or more microstructures of a multi-material device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE241562C (de) * 1909-07-31 1911-12-05
JPS5317078A (en) * 1976-07-30 1978-02-16 Toshiba Corp Etching end point detection circuit
US4155779A (en) * 1978-08-21 1979-05-22 Bell Telephone Laboratories, Incorporated Control techniques for annealing semiconductors
JPS61111563A (ja) * 1984-11-05 1986-05-29 Mitsubishi Electric Corp 半導体装置の金属配線切断方法
US4816422A (en) * 1986-12-29 1989-03-28 General Electric Company Fabrication of large power semiconductor composite by wafer interconnection of individual devices
US4853758A (en) * 1987-08-12 1989-08-01 American Telephone And Telegraph Company, At&T Bell Laboratories Laser-blown links
US4902631A (en) * 1988-10-28 1990-02-20 At&T Bell Laboratories Monitoring the fabrication of semiconductor devices by photon induced electron emission

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004032184B4 (de) * 2003-07-02 2013-05-23 Disco Corp. Laserstrahlbearbeitungsverfahren und Laserstrahlbearbeitungsmaschine bzw. -vorrichtung

Also Published As

Publication number Publication date
DE69026229D1 (de) 1996-05-02
EP0435469A3 (en) 1992-04-01
EP0435469B1 (de) 1996-03-27
JPH0652760B2 (ja) 1994-07-06
EP0435469A2 (de) 1991-07-03
JPH04130752A (ja) 1992-05-01
US5021362A (en) 1991-06-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee