DE69026229D1 - Verfahren zum Laser-Durchbrennen von Schmelzverbindungen beim Herstellen von integrierten Schaltungen - Google Patents
Verfahren zum Laser-Durchbrennen von Schmelzverbindungen beim Herstellen von integrierten SchaltungenInfo
- Publication number
- DE69026229D1 DE69026229D1 DE69026229T DE69026229T DE69026229D1 DE 69026229 D1 DE69026229 D1 DE 69026229D1 DE 69026229 T DE69026229 T DE 69026229T DE 69026229 T DE69026229 T DE 69026229T DE 69026229 D1 DE69026229 D1 DE 69026229D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacture
- integrated circuits
- laser blow
- fused connections
- fused
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
- H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/459,168 US5021362A (en) | 1989-12-29 | 1989-12-29 | Laser link blowing in integrateed circuit fabrication |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69026229D1 true DE69026229D1 (de) | 1996-05-02 |
DE69026229T2 DE69026229T2 (de) | 1996-09-05 |
Family
ID=23823684
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69026229T Expired - Fee Related DE69026229T2 (de) | 1989-12-29 | 1990-11-29 | Verfahren zum Laser-Durchbrennen von Schmelzverbindungen beim Herstellen von integrierten Schaltungen |
Country Status (4)
Country | Link |
---|---|
US (1) | US5021362A (de) |
EP (1) | EP0435469B1 (de) |
JP (1) | JPH0652760B2 (de) |
DE (1) | DE69026229T2 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5886320A (en) * | 1996-09-03 | 1999-03-23 | International Business Machines Corporation | Laser ablation with transmission matching for promoting energy coupling to a film stack |
US5998759A (en) | 1996-12-24 | 1999-12-07 | General Scanning, Inc. | Laser processing |
US6025256A (en) * | 1997-01-06 | 2000-02-15 | Electro Scientific Industries, Inc. | Laser based method and system for integrated circuit repair or reconfiguration |
US6046429A (en) * | 1997-06-12 | 2000-04-04 | International Business Machines Corporation | Laser repair process for printed wiring boards |
US6057180A (en) * | 1998-06-05 | 2000-05-02 | Electro Scientific Industries, Inc. | Method of severing electrically conductive links with ultraviolet laser output |
US6300590B1 (en) * | 1998-12-16 | 2001-10-09 | General Scanning, Inc. | Laser processing |
US6387715B1 (en) * | 1999-09-30 | 2002-05-14 | Advanced Micro Devices, Inc. | Integrated circuit defect detection via laser heat and IR thermography |
US6281471B1 (en) * | 1999-12-28 | 2001-08-28 | Gsi Lumonics, Inc. | Energy-efficient, laser-based method and system for processing target material |
US7838794B2 (en) * | 1999-12-28 | 2010-11-23 | Gsi Group Corporation | Laser-based method and system for removing one or more target link structures |
US20040134894A1 (en) * | 1999-12-28 | 2004-07-15 | Bo Gu | Laser-based system for memory link processing with picosecond lasers |
US7723642B2 (en) * | 1999-12-28 | 2010-05-25 | Gsi Group Corporation | Laser-based system for memory link processing with picosecond lasers |
US7671295B2 (en) * | 2000-01-10 | 2010-03-02 | Electro Scientific Industries, Inc. | Processing a memory link with a set of at least two laser pulses |
US20030222324A1 (en) * | 2000-01-10 | 2003-12-04 | Yunlong Sun | Laser systems for passivation or link processing with a set of laser pulses |
US20060141681A1 (en) * | 2000-01-10 | 2006-06-29 | Yunlong Sun | Processing a memory link with a set of at least two laser pulses |
US6639177B2 (en) * | 2001-03-29 | 2003-10-28 | Gsi Lumonics Corporation | Method and system for processing one or more microstructures of a multi-material device |
JP4231349B2 (ja) * | 2003-07-02 | 2009-02-25 | 株式会社ディスコ | レーザー加工方法およびレーザー加工装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE241562C (de) * | 1909-07-31 | 1911-12-05 | ||
JPS5317078A (en) * | 1976-07-30 | 1978-02-16 | Toshiba Corp | Etching end point detection circuit |
US4155779A (en) * | 1978-08-21 | 1979-05-22 | Bell Telephone Laboratories, Incorporated | Control techniques for annealing semiconductors |
JPS61111563A (ja) * | 1984-11-05 | 1986-05-29 | Mitsubishi Electric Corp | 半導体装置の金属配線切断方法 |
US4816422A (en) * | 1986-12-29 | 1989-03-28 | General Electric Company | Fabrication of large power semiconductor composite by wafer interconnection of individual devices |
US4853758A (en) * | 1987-08-12 | 1989-08-01 | American Telephone And Telegraph Company, At&T Bell Laboratories | Laser-blown links |
US4902631A (en) * | 1988-10-28 | 1990-02-20 | At&T Bell Laboratories | Monitoring the fabrication of semiconductor devices by photon induced electron emission |
-
1989
- 1989-12-29 US US07/459,168 patent/US5021362A/en not_active Expired - Lifetime
-
1990
- 1990-11-29 DE DE69026229T patent/DE69026229T2/de not_active Expired - Fee Related
- 1990-11-29 EP EP90313005A patent/EP0435469B1/de not_active Expired - Lifetime
- 1990-12-26 JP JP2414518A patent/JPH0652760B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69026229T2 (de) | 1996-09-05 |
EP0435469A3 (en) | 1992-04-01 |
EP0435469B1 (de) | 1996-03-27 |
JPH0652760B2 (ja) | 1994-07-06 |
EP0435469A2 (de) | 1991-07-03 |
JPH04130752A (ja) | 1992-05-01 |
US5021362A (en) | 1991-06-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |