DE69025888T2 - Halbleiterbauelement mit einem dielektrischen Isolierungsbereich mit der Struktur einer U-förmigen Nut - Google Patents
Halbleiterbauelement mit einem dielektrischen Isolierungsbereich mit der Struktur einer U-förmigen NutInfo
- Publication number
- DE69025888T2 DE69025888T2 DE69025888T DE69025888T DE69025888T2 DE 69025888 T2 DE69025888 T2 DE 69025888T2 DE 69025888 T DE69025888 T DE 69025888T DE 69025888 T DE69025888 T DE 69025888T DE 69025888 T2 DE69025888 T2 DE 69025888T2
- Authority
- DE
- Germany
- Prior art keywords
- shaped groove
- isolation region
- semiconductor component
- dielectric isolation
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32105—Oxidation of silicon-containing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/763—Polycrystalline semiconductor regions
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33205589 | 1989-12-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69025888D1 DE69025888D1 (de) | 1996-04-18 |
DE69025888T2 true DE69025888T2 (de) | 1996-07-25 |
Family
ID=18250637
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69025888T Expired - Fee Related DE69025888T2 (de) | 1989-12-20 | 1990-12-19 | Halbleiterbauelement mit einem dielektrischen Isolierungsbereich mit der Struktur einer U-förmigen Nut |
Country Status (3)
Country | Link |
---|---|
US (1) | US5148257A (de) |
EP (1) | EP0435550B1 (de) |
DE (1) | DE69025888T2 (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05152429A (ja) * | 1991-11-28 | 1993-06-18 | Nec Corp | 半導体装置の製造方法 |
WO1996002070A2 (en) * | 1994-07-12 | 1996-01-25 | National Semiconductor Corporation | Integrated circuit comprising a trench isolation structure and an oxygen barrier layer and method for forming the integrated circuit |
GB2322736B (en) * | 1997-02-28 | 2002-06-26 | Int Rectifier Corp | Integrated photovoltaic switch with integrated power device |
US5914523A (en) * | 1998-02-17 | 1999-06-22 | National Semiconductor Corp. | Semiconductor device trench isolation structure with polysilicon bias voltage contact |
KR100285701B1 (ko) * | 1998-06-29 | 2001-04-02 | 윤종용 | 트렌치격리의제조방법및그구조 |
DE10029036C1 (de) * | 2000-06-13 | 2001-08-09 | Infineon Technologies Ag | Verfahren zur Erhöhung der Trenchkapazität |
JP4618766B2 (ja) * | 2003-10-01 | 2011-01-26 | ローム株式会社 | 半導体デバイス |
US7776708B1 (en) * | 2005-08-11 | 2010-08-17 | National Semiconductor Corporation | System and method for providing a nitride cap over a polysilicon filled trench to prevent formation of a vertical bird's beak structure in the manufacture of a semiconductor device |
US7863153B1 (en) | 2006-07-13 | 2011-01-04 | National Semiconductor Corporation | System and method for creating different field oxide profiles in a locos process |
US8461661B2 (en) * | 2009-04-06 | 2013-06-11 | Polar Semiconductor, Inc. | Locos nitride capping of deep trench polysilicon fill |
CN104517824B (zh) * | 2014-08-01 | 2017-08-08 | 上海华虹宏力半导体制造有限公司 | 沟槽型双层栅的制造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0048175B1 (de) * | 1980-09-17 | 1986-04-23 | Hitachi, Ltd. | Halbleiterbauelement und Verfahren zu dessen Herstellung |
US4819054A (en) * | 1982-09-29 | 1989-04-04 | Hitachi, Ltd. | Semiconductor IC with dual groove isolation |
JPS5979548A (ja) * | 1982-10-29 | 1984-05-08 | Hitachi Ltd | 誘電体分離方法 |
JPS59106133A (ja) * | 1982-12-09 | 1984-06-19 | Nec Corp | 集積回路装置 |
JPS6083346A (ja) * | 1983-10-14 | 1985-05-11 | Hitachi Ltd | 半導体集積回路装置 |
US4528047A (en) * | 1984-06-25 | 1985-07-09 | International Business Machines Corporation | Method for forming a void free isolation structure utilizing etch and refill techniques |
JPS6122646A (ja) * | 1984-07-11 | 1986-01-31 | Hitachi Ltd | 絶縁分離溝の埋込み方法 |
US4656497A (en) * | 1984-11-01 | 1987-04-07 | Ncr Corporation | Trench isolation structures |
-
1990
- 1990-12-13 US US07/627,034 patent/US5148257A/en not_active Expired - Lifetime
- 1990-12-19 EP EP90313894A patent/EP0435550B1/de not_active Expired - Lifetime
- 1990-12-19 DE DE69025888T patent/DE69025888T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0435550B1 (de) | 1996-03-13 |
US5148257A (en) | 1992-09-15 |
EP0435550A2 (de) | 1991-07-03 |
DE69025888D1 (de) | 1996-04-18 |
EP0435550A3 (de) | 1991-07-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP |
|
8339 | Ceased/non-payment of the annual fee |