DE69021419T2 - Halbleiterspeicheranordnung mit einem ferroelektrischen Material. - Google Patents
Halbleiterspeicheranordnung mit einem ferroelektrischen Material.Info
- Publication number
- DE69021419T2 DE69021419T2 DE69021419T DE69021419T DE69021419T2 DE 69021419 T2 DE69021419 T2 DE 69021419T2 DE 69021419 T DE69021419 T DE 69021419T DE 69021419 T DE69021419 T DE 69021419T DE 69021419 T2 DE69021419 T2 DE 69021419T2
- Authority
- DE
- Germany
- Prior art keywords
- memory device
- semiconductor memory
- ferroelectric material
- ferroelectric
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000463 material Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1028941A JPH02208979A (ja) | 1989-02-08 | 1989-02-08 | 半導体装置 |
JP1028940A JPH02208978A (ja) | 1989-02-08 | 1989-02-08 | 半導体装置 |
JP1054222A JPH02232973A (ja) | 1989-03-07 | 1989-03-07 | 半導体装置 |
JP1125804A JPH02304984A (ja) | 1989-05-19 | 1989-05-19 | 強誘電体メモリ |
JP1125805A JPH02304985A (ja) | 1989-05-19 | 1989-05-19 | 強誘電体メモリ |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69021419D1 DE69021419D1 (de) | 1995-09-14 |
DE69021419T2 true DE69021419T2 (de) | 1996-03-07 |
Family
ID=27521087
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69021419T Expired - Lifetime DE69021419T2 (de) | 1989-02-08 | 1990-02-08 | Halbleiterspeicheranordnung mit einem ferroelektrischen Material. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5099305A (de) |
EP (1) | EP0389762B1 (de) |
KR (1) | KR950000156B1 (de) |
DE (1) | DE69021419T2 (de) |
HK (1) | HK107697A (de) |
Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0336763A (ja) * | 1989-07-03 | 1991-02-18 | Hitachi Ltd | 半導体集積回路装置 |
JP2573384B2 (ja) * | 1990-01-24 | 1997-01-22 | 株式会社東芝 | 半導体記憶装置とその製造方法 |
US5369296A (en) * | 1990-07-24 | 1994-11-29 | Ramtron International Corporation | Semiconductor device having a ferroelectric film in a through-hole |
JP3169599B2 (ja) * | 1990-08-03 | 2001-05-28 | 株式会社日立製作所 | 半導体装置、その駆動方法、その読み出し方法 |
US5866926A (en) * | 1990-09-28 | 1999-02-02 | Ramtron International Corporation | Ferroelectric memory device with capacitor electrode in direct contact with source region |
KR100266046B1 (ko) * | 1990-09-28 | 2000-09-15 | 야스카와 히데아키 | 반도체장치 |
US5119154A (en) * | 1990-12-03 | 1992-06-02 | Micron Technology, Inc. | Ferroelectric capacitor and method for forming local interconnect |
US5273927A (en) * | 1990-12-03 | 1993-12-28 | Micron Technology, Inc. | Method of making a ferroelectric capacitor and forming local interconnect |
US5530667A (en) * | 1991-03-01 | 1996-06-25 | Olympus Optical Co., Ltd. | Ferroelectric memory device |
US5218512A (en) * | 1991-08-16 | 1993-06-08 | Rohm Co., Ltd. | Ferroelectric device |
JPH0563205A (ja) * | 1991-09-03 | 1993-03-12 | Sharp Corp | 半導体装置 |
JPH05110110A (ja) * | 1991-10-18 | 1993-04-30 | Seiko Epson Corp | 半導体記憶装置 |
JP3264506B2 (ja) * | 1991-11-18 | 2002-03-11 | ローム株式会社 | 強誘電体不揮発性記憶装置 |
US5719416A (en) * | 1991-12-13 | 1998-02-17 | Symetrix Corporation | Integrated circuit with layered superlattice material compound |
US5468684A (en) * | 1991-12-13 | 1995-11-21 | Symetrix Corporation | Integrated circuit with layered superlattice material and method of fabricating same |
JP3407204B2 (ja) * | 1992-07-23 | 2003-05-19 | オリンパス光学工業株式会社 | 強誘電体集積回路及びその製造方法 |
US5187638A (en) * | 1992-07-27 | 1993-02-16 | Micron Technology, Inc. | Barrier layers for ferroelectric and pzt dielectric on silicon |
US5371699A (en) * | 1992-11-17 | 1994-12-06 | Ramtron International Corporation | Non-volatile ferroelectric memory with folded bit lines and method of making the same |
USH1543H (en) * | 1993-02-01 | 1996-06-04 | The United States Of America As Represented By The Secretary Of The Army | Ferroelectric/silicide/silicon multilayer and method of making the multilayer |
US6791131B1 (en) * | 1993-04-02 | 2004-09-14 | Micron Technology, Inc. | Method for forming a storage cell capacitor compatible with high dielectric constant materials |
US5381302A (en) * | 1993-04-02 | 1995-01-10 | Micron Semiconductor, Inc. | Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same |
US6030847A (en) * | 1993-04-02 | 2000-02-29 | Micron Technology, Inc. | Method for forming a storage cell capacitor compatible with high dielectric constant materials |
US5478772A (en) * | 1993-04-02 | 1995-12-26 | Micron Technology, Inc. | Method for forming a storage cell capacitor compatible with high dielectric constant materials |
US5392189A (en) | 1993-04-02 | 1995-02-21 | Micron Semiconductor, Inc. | Capacitor compatible with high dielectric constant materials having two independent insulative layers and the method for forming same |
US6531730B2 (en) * | 1993-08-10 | 2003-03-11 | Micron Technology, Inc. | Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same |
JPH07202017A (ja) * | 1993-12-28 | 1995-08-04 | Hitachi Ltd | 半導体集積回路装置及びその製造方法 |
US6013950A (en) * | 1994-05-19 | 2000-01-11 | Sandia Corporation | Semiconductor diode with external field modulation |
US5793076A (en) * | 1995-09-21 | 1998-08-11 | Micron Technology, Inc. | Scalable high dielectric constant capacitor |
US5801916A (en) * | 1995-11-13 | 1998-09-01 | Micron Technology, Inc. | Pre-patterned contact fill capacitor for dielectric etch protection |
US5631804A (en) * | 1995-11-13 | 1997-05-20 | Micron Technology, Inc. | Contact fill capacitor having a sidewall that connects the upper and lower surfaces of the dielectric and partially surrounds an insulating layer |
KR0170308B1 (ko) * | 1995-12-05 | 1999-02-01 | 김광호 | 강유전체 캐패시터의 제조방법 |
DE19640241C1 (de) * | 1996-09-30 | 1998-04-16 | Siemens Ag | Herstellverfahren für eine hoch-epsilon-dielektrische oder ferroelektrische Schicht und Verwendung des Verfahrens |
KR100232223B1 (ko) * | 1996-10-24 | 1999-12-01 | 김영환 | 메모리용 플라트늄 박막 형성방법 |
KR100252854B1 (ko) * | 1997-12-26 | 2000-04-15 | 김영환 | 반도체 메모리 장치 및 그 제조방법 |
US6124164A (en) | 1998-09-17 | 2000-09-26 | Micron Technology, Inc. | Method of making integrated capacitor incorporating high K dielectric |
US6750500B1 (en) | 1999-01-05 | 2004-06-15 | Micron Technology, Inc. | Capacitor electrode for integrating high K materials |
US6242299B1 (en) | 1999-04-01 | 2001-06-05 | Ramtron International Corporation | Barrier layer to protect a ferroelectric capacitor after contact has been made to the capacitor electrode |
JP2001135798A (ja) * | 1999-11-10 | 2001-05-18 | Nec Corp | 強誘電体メモリおよび強誘電体メモリ製造方法 |
JP2001168296A (ja) * | 1999-12-14 | 2001-06-22 | Matsushita Electronics Industry Corp | 不揮発性記憶装置およびその駆動方法 |
US6455424B1 (en) * | 2000-08-07 | 2002-09-24 | Micron Technology, Inc. | Selective cap layers over recessed polysilicon plugs |
US6956274B2 (en) * | 2002-01-11 | 2005-10-18 | Analog Devices, Inc. | TiW platinum interconnect and method of making the same |
DE102006035644A1 (de) * | 2006-07-31 | 2008-02-14 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zum Reduzieren der Kontamination durch Vorsehen einer zu entfernenden Polymerschutzschicht während der Bearbeitung von Mikrostrukturen |
DE102008008699B4 (de) * | 2008-02-11 | 2010-09-09 | Eads Deutschland Gmbh | Abstimmbarer planarer ferroelektrischer Kondensator |
US8729614B2 (en) * | 2010-06-29 | 2014-05-20 | Sungkyunkwan University Foundation For Corporate Collaboration | Flexible ferroelectric memory device and manufacturing method for the same |
US9092582B2 (en) | 2010-07-09 | 2015-07-28 | Cypress Semiconductor Corporation | Low power, low pin count interface for an RFID transponder |
US8723654B2 (en) | 2010-07-09 | 2014-05-13 | Cypress Semiconductor Corporation | Interrupt generation and acknowledgment for RFID |
US9846664B2 (en) | 2010-07-09 | 2017-12-19 | Cypress Semiconductor Corporation | RFID interface and interrupt |
US20120241710A1 (en) * | 2011-03-21 | 2012-09-27 | Nanyang Technological University | Fabrication of RRAM Cell Using CMOS Compatible Processes |
WO2013017131A2 (de) * | 2011-07-12 | 2013-02-07 | Helmholtz-Zentrum Dresden - Rossendorf E.V. | Integrierte nichtflüchtige speicherelemente, aufbau und verwendung |
US9276041B2 (en) | 2012-03-19 | 2016-03-01 | Globalfoundries Singapore Pte Ltd | Three dimensional RRAM device, and methods of making same |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3832700A (en) * | 1973-04-24 | 1974-08-27 | Westinghouse Electric Corp | Ferroelectric memory device |
JPS52102690A (en) * | 1976-02-25 | 1977-08-29 | Hitachi Ltd | Semiconductor capacitance device |
US4149301A (en) * | 1977-07-25 | 1979-04-17 | Ferrosil Corporation | Monolithic semiconductor integrated circuit-ferroelectric memory drive |
JPS57180182A (en) * | 1981-04-30 | 1982-11-06 | Fujitsu Ltd | Semiconductor involatile memory device |
JPS57206068A (en) * | 1982-05-10 | 1982-12-17 | Nec Corp | Semiconductor memory device |
DE3602887A1 (de) * | 1986-01-31 | 1987-08-06 | Bayer Ag | Nichtfluechtiger elektronischer speicher |
IT1191566B (it) * | 1986-06-27 | 1988-03-23 | Sgs Microelettronica Spa | Dispositivo di memoria non labile a semiconduttore del tipo a porta non connessa (floating gate) alterabile elettricamente con area di tunnel ridotta e procedimento di fabbricazione |
US4873664A (en) * | 1987-02-12 | 1989-10-10 | Ramtron Corporation | Self restoring ferroelectric memory |
US4888630A (en) * | 1988-03-21 | 1989-12-19 | Texas Instruments Incorporated | Floating-gate transistor with a non-linear intergate dielectric |
EP0338157B1 (de) * | 1988-04-22 | 1994-07-06 | Ramtron International Corporation | DRAM-Zelle mit verstärkter Ladung |
-
1990
- 1990-02-05 KR KR1019900001323A patent/KR950000156B1/ko not_active IP Right Cessation
- 1990-02-08 EP EP90102489A patent/EP0389762B1/de not_active Expired - Lifetime
- 1990-02-08 DE DE69021419T patent/DE69021419T2/de not_active Expired - Lifetime
-
1991
- 1991-05-30 US US07/723,681 patent/US5099305A/en not_active Expired - Lifetime
-
1997
- 1997-06-26 HK HK107697A patent/HK107697A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
HK107697A (en) | 1997-08-22 |
EP0389762A3 (de) | 1991-09-18 |
KR950000156B1 (ko) | 1995-01-10 |
EP0389762B1 (de) | 1995-08-09 |
KR900013586A (ko) | 1990-09-06 |
EP0389762A2 (de) | 1990-10-03 |
US5099305A (en) | 1992-03-24 |
DE69021419D1 (de) | 1995-09-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |