DE69018842D1 - Integrierte Halbleitervorrichtung, die einen Feldeffekt-Transistor mit isoliertem, auf einem erhöhtem Pegel vorgespanntem Gate enthält. - Google Patents
Integrierte Halbleitervorrichtung, die einen Feldeffekt-Transistor mit isoliertem, auf einem erhöhtem Pegel vorgespanntem Gate enthält.Info
- Publication number
- DE69018842D1 DE69018842D1 DE69018842T DE69018842T DE69018842D1 DE 69018842 D1 DE69018842 D1 DE 69018842D1 DE 69018842 T DE69018842 T DE 69018842T DE 69018842 T DE69018842 T DE 69018842T DE 69018842 D1 DE69018842 D1 DE 69018842D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- field effect
- effect transistor
- insulated gate
- integrated semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
- H03B19/06—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes
- H03B19/14—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes by means of a semiconductor device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/20—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
- H03K19/21—EXCLUSIVE-OR circuits, i.e. giving output if input signal exists at only one input; COINCIDENCE circuits, i.e. giving output only if all input signals are identical
- H03K19/215—EXCLUSIVE-OR circuits, i.e. giving output if input signal exists at only one input; COINCIDENCE circuits, i.e. giving output only if all input signals are identical using field-effect transistors
- H03K19/217—EXCLUSIVE-OR circuits, i.e. giving output if input signal exists at only one input; COINCIDENCE circuits, i.e. giving output only if all input signals are identical using field-effect transistors using Schottky type FET [MESFET]
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8900810A FR2642226A1 (fr) | 1989-01-24 | 1989-01-24 | Dispositif semiconducteur integre incluant un etage ou-exclusif complementaire |
FR8900809A FR2642225A1 (fr) | 1989-01-24 | 1989-01-24 | Dispositif semiconducteur integre incluant un circuit doubleur de frequences |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69018842D1 true DE69018842D1 (de) | 1995-06-01 |
DE69018842T2 DE69018842T2 (de) | 1995-12-07 |
Family
ID=26227127
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69018842T Expired - Fee Related DE69018842T2 (de) | 1989-01-24 | 1990-01-18 | Integrierte Halbleitervorrichtung, die einen Feldeffekt-Transistor mit isoliertem, auf einem erhöhtem Pegel vorgespanntem Gate enthält. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5130763A (de) |
EP (1) | EP0380168B1 (de) |
JP (1) | JPH02237165A (de) |
KR (1) | KR900012372A (de) |
DE (1) | DE69018842T2 (de) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0137601B1 (ko) * | 1994-09-16 | 1998-04-28 | 양승택 | 전자의 간섭성을 이용한 양자간섭 트랜지스터 |
US5767526A (en) * | 1997-01-07 | 1998-06-16 | Texas Instruments Incorporated | Bipolar resonant tunneling transistor frequency multiplier |
JP2000049338A (ja) * | 1998-07-28 | 2000-02-18 | Mitsubishi Electric Corp | 絶縁ゲート型トランジスタの特性評価方法、絶縁ゲート型トランジスタの製造方法、絶縁ゲート型トランジスタの特性評価装置、および特性評価プログラムを記録してあるコンピュータ読み取り可能な記録媒体 |
US6518589B2 (en) | 2000-06-22 | 2003-02-11 | Progressant Technologies, Inc. | Dual mode FET & logic circuit having negative differential resistance mode |
US6559470B2 (en) | 2000-06-22 | 2003-05-06 | Progressed Technologies, Inc. | Negative differential resistance field effect transistor (NDR-FET) and circuits using the same |
US6724655B2 (en) | 2000-06-22 | 2004-04-20 | Progressant Technologies, Inc. | Memory cell using negative differential resistance field effect transistors |
US6594193B2 (en) | 2000-06-22 | 2003-07-15 | Progressent Technologies, Inc. | Charge pump for negative differential resistance transistor |
US6596617B1 (en) | 2000-06-22 | 2003-07-22 | Progressant Technologies, Inc. | CMOS compatible process for making a tunable negative differential resistance (NDR) device |
US6479862B1 (en) * | 2000-06-22 | 2002-11-12 | Progressant Technologies, Inc. | Charge trapping device and method for implementing a transistor having a negative differential resistance mode |
US6754104B2 (en) * | 2000-06-22 | 2004-06-22 | Progressant Technologies, Inc. | Insulated-gate field-effect transistor integrated with negative differential resistance (NDR) FET |
US6512274B1 (en) * | 2000-06-22 | 2003-01-28 | Progressant Technologies, Inc. | CMOS-process compatible, tunable NDR (negative differential resistance) device and method of operating same |
US7453083B2 (en) * | 2001-12-21 | 2008-11-18 | Synopsys, Inc. | Negative differential resistance field effect transistor for implementing a pull up element in a memory cell |
US6933548B1 (en) | 2001-12-21 | 2005-08-23 | Synopsys, Inc. | Negative differential resistance load element |
US6864104B2 (en) * | 2002-06-28 | 2005-03-08 | Progressant Technologies, Inc. | Silicon on insulator (SOI) negative differential resistance (NDR) based memory device with reduced body effects |
US7095659B2 (en) * | 2002-06-28 | 2006-08-22 | Progressant Technologies, Inc. | Variable voltage supply bias and methods for negative differential resistance (NDR) based memory device |
US6567292B1 (en) | 2002-06-28 | 2003-05-20 | Progressant Technologies, Inc. | Negative differential resistance (NDR) element and memory with reduced soft error rate |
US6853035B1 (en) | 2002-06-28 | 2005-02-08 | Synopsys, Inc. | Negative differential resistance (NDR) memory device with reduced soft error rate |
US6847562B2 (en) * | 2002-06-28 | 2005-01-25 | Progressant Technologies, Inc. | Enhanced read and write methods for negative differential resistance (NDR) based memory device |
US7098472B2 (en) * | 2002-06-28 | 2006-08-29 | Progressant Technologies, Inc. | Negative differential resistance (NDR) elements and memory device using the same |
US6795337B2 (en) * | 2002-06-28 | 2004-09-21 | Progressant Technologies, Inc. | Negative differential resistance (NDR) elements and memory device using the same |
US6912151B2 (en) * | 2002-06-28 | 2005-06-28 | Synopsys, Inc. | Negative differential resistance (NDR) based memory device with reduced body effects |
US7012833B2 (en) * | 2002-12-09 | 2006-03-14 | Progressant Technologies, Inc. | Integrated circuit having negative differential resistance (NDR) devices with varied peak-to-valley ratios (PVRs) |
US6812084B2 (en) * | 2002-12-09 | 2004-11-02 | Progressant Technologies, Inc. | Adaptive negative differential resistance device |
US6979580B2 (en) * | 2002-12-09 | 2005-12-27 | Progressant Technologies, Inc. | Process for controlling performance characteristics of a negative differential resistance (NDR) device |
US6806117B2 (en) * | 2002-12-09 | 2004-10-19 | Progressant Technologies, Inc. | Methods of testing/stressing a charge trapping device |
US6849483B2 (en) * | 2002-12-09 | 2005-02-01 | Progressant Technologies, Inc. | Charge trapping device and method of forming the same |
US6980467B2 (en) * | 2002-12-09 | 2005-12-27 | Progressant Technologies, Inc. | Method of forming a negative differential resistance device |
US7005711B2 (en) * | 2002-12-20 | 2006-02-28 | Progressant Technologies, Inc. | N-channel pull-up element and logic circuit |
TW200826203A (en) * | 2006-12-14 | 2008-06-16 | Univ Nat Taiwan | Method for utilizing III-V semiconductors as gate electrode |
US10958216B2 (en) * | 2019-08-22 | 2021-03-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and operation method thereof |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4027179A (en) * | 1975-08-28 | 1977-05-31 | Rca Corporation | High repetition rate injection laser modulator |
US4366493A (en) * | 1980-06-20 | 1982-12-28 | International Business Machines Corporation | Semiconductor ballistic transport device |
US4605912A (en) * | 1981-12-03 | 1986-08-12 | General Electric Company | Continuously variable phase shifting element comprised of interdigitated electrode MESFET |
US4636823A (en) * | 1984-06-05 | 1987-01-13 | California Institute Of Technology | Vertical Schottky barrier gate field-effect transistor in GaAs/GaAlAs |
US4788579A (en) * | 1985-09-30 | 1988-11-29 | The General Electric Company | Semiconductor superlattice |
JPH0611056B2 (ja) * | 1985-12-03 | 1994-02-09 | 富士通株式会社 | 高速半導体装置 |
JPS62176162A (ja) * | 1986-01-30 | 1987-08-01 | Agency Of Ind Science & Technol | 負性抵抗素子 |
US4724342A (en) * | 1986-02-12 | 1988-02-09 | Hughes Aircraft Company | Push-pull DCFL driver circuit |
FR2600821B1 (fr) * | 1986-06-30 | 1988-12-30 | Thomson Csf | Dispositif semi-conducteur a heterojonction et double canal, son application a un transistor a effet de champ, et son application a un dispositif de transductance negative |
US4885623A (en) * | 1987-10-30 | 1989-12-05 | Holm Kennedy James W | Distributed channel-bipolar device |
US5021841A (en) * | 1988-10-14 | 1991-06-04 | University Of Illinois | Semiconductor device with controlled negative differential resistance characteristic |
-
1990
- 1990-01-18 EP EP90200131A patent/EP0380168B1/de not_active Expired - Lifetime
- 1990-01-18 DE DE69018842T patent/DE69018842T2/de not_active Expired - Fee Related
- 1990-01-19 US US07/467,625 patent/US5130763A/en not_active Expired - Fee Related
- 1990-01-24 KR KR1019900000805A patent/KR900012372A/ko not_active Application Discontinuation
- 1990-01-24 JP JP2012741A patent/JPH02237165A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US5130763A (en) | 1992-07-14 |
EP0380168A1 (de) | 1990-08-01 |
KR900012372A (ko) | 1990-08-04 |
JPH02237165A (ja) | 1990-09-19 |
DE69018842T2 (de) | 1995-12-07 |
EP0380168B1 (de) | 1995-04-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N |
|
8339 | Ceased/non-payment of the annual fee |