DE69018842D1 - Integrierte Halbleitervorrichtung, die einen Feldeffekt-Transistor mit isoliertem, auf einem erhöhtem Pegel vorgespanntem Gate enthält. - Google Patents

Integrierte Halbleitervorrichtung, die einen Feldeffekt-Transistor mit isoliertem, auf einem erhöhtem Pegel vorgespanntem Gate enthält.

Info

Publication number
DE69018842D1
DE69018842D1 DE69018842T DE69018842T DE69018842D1 DE 69018842 D1 DE69018842 D1 DE 69018842D1 DE 69018842 T DE69018842 T DE 69018842T DE 69018842 T DE69018842 T DE 69018842T DE 69018842 D1 DE69018842 D1 DE 69018842D1
Authority
DE
Germany
Prior art keywords
semiconductor device
field effect
effect transistor
insulated gate
integrated semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69018842T
Other languages
English (en)
Other versions
DE69018842T2 (de
Inventor
Etienne Delhaye
Michel Wolny
Thierry Aguila
Ramesh Pyndiah
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR8900810A external-priority patent/FR2642226A1/fr
Priority claimed from FR8900809A external-priority patent/FR2642225A1/fr
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Application granted granted Critical
Publication of DE69018842D1 publication Critical patent/DE69018842D1/de
Publication of DE69018842T2 publication Critical patent/DE69018842T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
    • H03B19/06—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes
    • H03B19/14—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes by means of a semiconductor device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/20—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
    • H03K19/21—EXCLUSIVE-OR circuits, i.e. giving output if input signal exists at only one input; COINCIDENCE circuits, i.e. giving output only if all input signals are identical
    • H03K19/215—EXCLUSIVE-OR circuits, i.e. giving output if input signal exists at only one input; COINCIDENCE circuits, i.e. giving output only if all input signals are identical using field-effect transistors
    • H03K19/217—EXCLUSIVE-OR circuits, i.e. giving output if input signal exists at only one input; COINCIDENCE circuits, i.e. giving output only if all input signals are identical using field-effect transistors using Schottky type FET [MESFET]
DE69018842T 1989-01-24 1990-01-18 Integrierte Halbleitervorrichtung, die einen Feldeffekt-Transistor mit isoliertem, auf einem erhöhtem Pegel vorgespanntem Gate enthält. Expired - Fee Related DE69018842T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8900810A FR2642226A1 (fr) 1989-01-24 1989-01-24 Dispositif semiconducteur integre incluant un etage ou-exclusif complementaire
FR8900809A FR2642225A1 (fr) 1989-01-24 1989-01-24 Dispositif semiconducteur integre incluant un circuit doubleur de frequences

Publications (2)

Publication Number Publication Date
DE69018842D1 true DE69018842D1 (de) 1995-06-01
DE69018842T2 DE69018842T2 (de) 1995-12-07

Family

ID=26227127

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69018842T Expired - Fee Related DE69018842T2 (de) 1989-01-24 1990-01-18 Integrierte Halbleitervorrichtung, die einen Feldeffekt-Transistor mit isoliertem, auf einem erhöhtem Pegel vorgespanntem Gate enthält.

Country Status (5)

Country Link
US (1) US5130763A (de)
EP (1) EP0380168B1 (de)
JP (1) JPH02237165A (de)
KR (1) KR900012372A (de)
DE (1) DE69018842T2 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0137601B1 (ko) * 1994-09-16 1998-04-28 양승택 전자의 간섭성을 이용한 양자간섭 트랜지스터
US5767526A (en) * 1997-01-07 1998-06-16 Texas Instruments Incorporated Bipolar resonant tunneling transistor frequency multiplier
JP2000049338A (ja) * 1998-07-28 2000-02-18 Mitsubishi Electric Corp 絶縁ゲート型トランジスタの特性評価方法、絶縁ゲート型トランジスタの製造方法、絶縁ゲート型トランジスタの特性評価装置、および特性評価プログラムを記録してあるコンピュータ読み取り可能な記録媒体
US6512274B1 (en) * 2000-06-22 2003-01-28 Progressant Technologies, Inc. CMOS-process compatible, tunable NDR (negative differential resistance) device and method of operating same
US6724655B2 (en) * 2000-06-22 2004-04-20 Progressant Technologies, Inc. Memory cell using negative differential resistance field effect transistors
US6754104B2 (en) * 2000-06-22 2004-06-22 Progressant Technologies, Inc. Insulated-gate field-effect transistor integrated with negative differential resistance (NDR) FET
US6594193B2 (en) 2000-06-22 2003-07-15 Progressent Technologies, Inc. Charge pump for negative differential resistance transistor
US6518589B2 (en) 2000-06-22 2003-02-11 Progressant Technologies, Inc. Dual mode FET & logic circuit having negative differential resistance mode
US6479862B1 (en) 2000-06-22 2002-11-12 Progressant Technologies, Inc. Charge trapping device and method for implementing a transistor having a negative differential resistance mode
US6559470B2 (en) 2000-06-22 2003-05-06 Progressed Technologies, Inc. Negative differential resistance field effect transistor (NDR-FET) and circuits using the same
US6596617B1 (en) 2000-06-22 2003-07-22 Progressant Technologies, Inc. CMOS compatible process for making a tunable negative differential resistance (NDR) device
US7453083B2 (en) * 2001-12-21 2008-11-18 Synopsys, Inc. Negative differential resistance field effect transistor for implementing a pull up element in a memory cell
US6933548B1 (en) 2001-12-21 2005-08-23 Synopsys, Inc. Negative differential resistance load element
US7095659B2 (en) * 2002-06-28 2006-08-22 Progressant Technologies, Inc. Variable voltage supply bias and methods for negative differential resistance (NDR) based memory device
US6864104B2 (en) * 2002-06-28 2005-03-08 Progressant Technologies, Inc. Silicon on insulator (SOI) negative differential resistance (NDR) based memory device with reduced body effects
US6847562B2 (en) * 2002-06-28 2005-01-25 Progressant Technologies, Inc. Enhanced read and write methods for negative differential resistance (NDR) based memory device
US7098472B2 (en) * 2002-06-28 2006-08-29 Progressant Technologies, Inc. Negative differential resistance (NDR) elements and memory device using the same
US6795337B2 (en) 2002-06-28 2004-09-21 Progressant Technologies, Inc. Negative differential resistance (NDR) elements and memory device using the same
US6567292B1 (en) 2002-06-28 2003-05-20 Progressant Technologies, Inc. Negative differential resistance (NDR) element and memory with reduced soft error rate
US6861707B1 (en) 2002-06-28 2005-03-01 Progressant Technologies, Inc. Negative differential resistance (NDR) memory cell with reduced soft error rate
US6912151B2 (en) * 2002-06-28 2005-06-28 Synopsys, Inc. Negative differential resistance (NDR) based memory device with reduced body effects
US7012833B2 (en) * 2002-12-09 2006-03-14 Progressant Technologies, Inc. Integrated circuit having negative differential resistance (NDR) devices with varied peak-to-valley ratios (PVRs)
US6806117B2 (en) * 2002-12-09 2004-10-19 Progressant Technologies, Inc. Methods of testing/stressing a charge trapping device
US6980467B2 (en) * 2002-12-09 2005-12-27 Progressant Technologies, Inc. Method of forming a negative differential resistance device
US6979580B2 (en) * 2002-12-09 2005-12-27 Progressant Technologies, Inc. Process for controlling performance characteristics of a negative differential resistance (NDR) device
US6812084B2 (en) * 2002-12-09 2004-11-02 Progressant Technologies, Inc. Adaptive negative differential resistance device
US6849483B2 (en) * 2002-12-09 2005-02-01 Progressant Technologies, Inc. Charge trapping device and method of forming the same
US7005711B2 (en) * 2002-12-20 2006-02-28 Progressant Technologies, Inc. N-channel pull-up element and logic circuit
TW200826203A (en) * 2006-12-14 2008-06-16 Univ Nat Taiwan Method for utilizing III-V semiconductors as gate electrode
US10958216B2 (en) * 2019-08-22 2021-03-23 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and operation method thereof

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4027179A (en) * 1975-08-28 1977-05-31 Rca Corporation High repetition rate injection laser modulator
US4366493A (en) * 1980-06-20 1982-12-28 International Business Machines Corporation Semiconductor ballistic transport device
US4605912A (en) * 1981-12-03 1986-08-12 General Electric Company Continuously variable phase shifting element comprised of interdigitated electrode MESFET
US4636823A (en) * 1984-06-05 1987-01-13 California Institute Of Technology Vertical Schottky barrier gate field-effect transistor in GaAs/GaAlAs
US4788579A (en) * 1985-09-30 1988-11-29 The General Electric Company Semiconductor superlattice
JPH0611056B2 (ja) * 1985-12-03 1994-02-09 富士通株式会社 高速半導体装置
JPS62176162A (ja) * 1986-01-30 1987-08-01 Agency Of Ind Science & Technol 負性抵抗素子
US4724342A (en) * 1986-02-12 1988-02-09 Hughes Aircraft Company Push-pull DCFL driver circuit
FR2600821B1 (fr) * 1986-06-30 1988-12-30 Thomson Csf Dispositif semi-conducteur a heterojonction et double canal, son application a un transistor a effet de champ, et son application a un dispositif de transductance negative
US4885623A (en) * 1987-10-30 1989-12-05 Holm Kennedy James W Distributed channel-bipolar device
US5021841A (en) * 1988-10-14 1991-06-04 University Of Illinois Semiconductor device with controlled negative differential resistance characteristic

Also Published As

Publication number Publication date
JPH02237165A (ja) 1990-09-19
DE69018842T2 (de) 1995-12-07
EP0380168A1 (de) 1990-08-01
KR900012372A (ko) 1990-08-04
EP0380168B1 (de) 1995-04-26
US5130763A (en) 1992-07-14

Similar Documents

Publication Publication Date Title
DE69018842T2 (de) Integrierte Halbleitervorrichtung, die einen Feldeffekt-Transistor mit isoliertem, auf einem erhöhtem Pegel vorgespanntem Gate enthält.
DE69021177D1 (de) Halbleiteranordnung mit isolierter Gateelektrode.
DE69213539T2 (de) Halbleitervorrichtung mit verbessertem isoliertem Gate-Transistor
DE69015666T2 (de) MOSFET-Transistor mit nicht-gleichmässiger Schwellspannung im Kanalbereich.
DE68921368D1 (de) Gate-Abschalthalbleitereinrichtung.
DE3381811D1 (de) Feldeffekttransistor mit isoliertem gate mit einem gate aus silizium.
DE69015228T2 (de) Halbleitervorrichtung mit Kaskaden-modulations-dotierten Potentialtopf-Heterostrukturen.
DE69020316T2 (de) MOS-Schaltkreis mit einem Gate-optimierten lateralen bipolaren Transistor.
DE3280202D1 (de) Heterouebergang-halbleitereinrichtung mit hoher elektronenbeweglichkeit.
DE69223719D1 (de) Feldeffekttransistor mit isoliertem Gate vom Anreicherungstyp mit gesteuerter Anstiegszeit an der Drain-Ausgangselektrode
DE3889610D1 (de) Halbleiteranordnung mit einem Trench-Bipolartransistor.
DE3782748D1 (de) Feldeffekttransistor mit isoliertem gate.
DE69111022T2 (de) Eine Halbleiteranordnung mit zwei integrierten Schaltungspackungen.
DE3879323D1 (de) Duennschicht-mos-transistor mit zwei gate-elektroden, die gegenueber der halbleitenden schicht liegen.
DE3888148D1 (de) Integrierte Schaltung mit einem Lateraltransistor.
IT8121781A0 (it) Dispositivo a semi-conduttore provvisto di transistor laterale.
DE69317562T2 (de) Halbleiteranordnung mit doppelgate.
IT8125510A0 (it) Dispositivo a semiconduttore, in particolare transistor di potenza.
DE59007053D1 (de) Leistungs-Halbleiterbauelement mit Emitterkurzschlüssen.
DE68916697T2 (de) Gate-gesteuerte Zweirichtungshalbleiterschaltungseinrichtung.
DE69007502T2 (de) Von einer Vorrichtung mit zwei symmetrischen Ladungspumpen gesteuerte Leistungs-MOS-Transistorschaltung.
DE68922212T2 (de) Halbleiteranordnung, die eine integrierte schaltung mit einem vertikalen transistor enthält.
DE69014800T2 (de) Attenuatorschaltung mit einem Dual-Gate-Feldeffekttransistor.
DE3882791T2 (de) Halbleiterspeicheranordnung mit einem Resonanz-Tunnel-Transistor.
DE69310559D1 (de) Schaltungs-Halbleiterbauteil mit Gate

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8339 Ceased/non-payment of the annual fee