DE69017810D1 - Vorrichtung zur chemischen Dampfphasenabscheidung. - Google Patents
Vorrichtung zur chemischen Dampfphasenabscheidung.Info
- Publication number
- DE69017810D1 DE69017810D1 DE69017810T DE69017810T DE69017810D1 DE 69017810 D1 DE69017810 D1 DE 69017810D1 DE 69017810 T DE69017810 T DE 69017810T DE 69017810 T DE69017810 T DE 69017810T DE 69017810 D1 DE69017810 D1 DE 69017810D1
- Authority
- DE
- Germany
- Prior art keywords
- vapor deposition
- chemical vapor
- deposition device
- chemical
- vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45517—Confinement of gases to vicinity of substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1213477A JP2506451B2 (ja) | 1989-08-18 | 1989-08-18 | 化学気相成長装置及び化学気相成長法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69017810D1 true DE69017810D1 (de) | 1995-04-20 |
Family
ID=16639851
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69017810T Expired - Lifetime DE69017810D1 (de) | 1989-08-18 | 1990-08-16 | Vorrichtung zur chemischen Dampfphasenabscheidung. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5264038A (de) |
EP (1) | EP0418554B1 (de) |
JP (1) | JP2506451B2 (de) |
KR (1) | KR940001645B1 (de) |
DE (1) | DE69017810D1 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5421888A (en) * | 1992-05-12 | 1995-06-06 | Sony Corporation | Low pressure CVD apparatus comprising gas distribution collimator |
US5290358A (en) * | 1992-09-30 | 1994-03-01 | International Business Machines Corporation | Apparatus for directional low pressure chemical vapor deposition (DLPCVD) |
JPH0745530A (ja) * | 1993-07-27 | 1995-02-14 | Shin Etsu Handotai Co Ltd | 縦型気相成長装置 |
US5595936A (en) * | 1993-08-04 | 1997-01-21 | Hyundai Electronics Industries Co., Ltd. | Method for forming contacts in semiconductor device |
US6035100A (en) * | 1997-05-16 | 2000-03-07 | Applied Materials, Inc. | Reflector cover for a semiconductor processing chamber |
JP3917237B2 (ja) * | 1997-05-20 | 2007-05-23 | 東京エレクトロン株式会社 | レジスト膜形成方法 |
JP3403357B2 (ja) | 1999-06-03 | 2003-05-06 | 株式会社半導体先端テクノロジーズ | 配線形成方法及び配線形成装置 |
US6499426B1 (en) | 1999-12-10 | 2002-12-31 | Saint-Gobain Industrial Ceramics, Inc. | System and method for coating non-planar surfaces of objects with diamond film |
US6547876B2 (en) | 2001-02-07 | 2003-04-15 | Emcore Corporation | Apparatus for growing epitaxial layers on wafers by chemical vapor deposition |
US7049226B2 (en) | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
US7780785B2 (en) | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
US6916398B2 (en) | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
JP2005514762A (ja) * | 2001-12-20 | 2005-05-19 | 東京エレクトロン株式会社 | 加工物をプラズマ処理するための磁気フィルタを備える方法および装置 |
JP2007242850A (ja) * | 2006-03-08 | 2007-09-20 | Nec Corp | 半導体製造装置及び半導体製造方法 |
KR102135409B1 (ko) * | 2016-11-09 | 2020-07-17 | 주식회사 원익아이피에스 | 로드락챔버 및 이를 포함하는 기판처리장치 |
KR20200135666A (ko) | 2019-05-24 | 2020-12-03 | 삼성전자주식회사 | 기판 처리 장치 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3098763A (en) * | 1961-05-29 | 1963-07-23 | Raytheon Co | Chemical reactor |
US4340462A (en) * | 1981-02-13 | 1982-07-20 | Lam Research Corporation | Adjustable electrode plasma processing chamber |
JPS59207631A (ja) * | 1983-05-11 | 1984-11-24 | Semiconductor Res Found | 光化学を用いたドライプロセス装置 |
JPS6091631A (ja) * | 1983-10-25 | 1985-05-23 | Toshiba Corp | 半導体装置の製造方法 |
JPS61127119A (ja) * | 1984-11-22 | 1986-06-14 | Sanyo Electric Co Ltd | シリコン結晶の成長方法 |
JPS6376876A (ja) * | 1986-09-19 | 1988-04-07 | Fujitsu Ltd | 気相成長法 |
US4774416A (en) * | 1986-09-24 | 1988-09-27 | Plaser Corporation | Large cross-sectional area molecular beam source for semiconductor processing |
JPH0772351B2 (ja) * | 1986-12-01 | 1995-08-02 | 株式会社日立製作所 | 金属薄膜選択成長方法 |
US4838201A (en) * | 1986-12-12 | 1989-06-13 | Daido Sanso K. K. | Apparatus and process for vacuum chemical epitaxy |
JPS63153273A (ja) * | 1986-12-16 | 1988-06-25 | Matsushita Electric Ind Co Ltd | 金属薄膜の選択堆積方法 |
US5000113A (en) * | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
JPS63227011A (ja) * | 1987-03-17 | 1988-09-21 | Fujitsu Ltd | 化学気相成長装置 |
US4980204A (en) * | 1987-11-27 | 1990-12-25 | Fujitsu Limited | Metal organic chemical vapor deposition method with controlled gas flow rate |
JPH0757033B2 (ja) * | 1988-06-20 | 1995-06-14 | 日通工株式会社 | 局線インタフェース回路 |
-
1989
- 1989-08-18 JP JP1213477A patent/JP2506451B2/ja not_active Expired - Fee Related
-
1990
- 1990-08-14 US US07/567,224 patent/US5264038A/en not_active Expired - Lifetime
- 1990-08-16 DE DE69017810T patent/DE69017810D1/de not_active Expired - Lifetime
- 1990-08-16 EP EP90115714A patent/EP0418554B1/de not_active Expired - Lifetime
- 1990-08-18 KR KR1019900012735A patent/KR940001645B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0418554B1 (de) | 1995-03-15 |
JP2506451B2 (ja) | 1996-06-12 |
US5264038A (en) | 1993-11-23 |
KR940001645B1 (ko) | 1994-02-28 |
EP0418554A2 (de) | 1991-03-27 |
EP0418554A3 (en) | 1991-07-17 |
JPH0376220A (ja) | 1991-04-02 |
KR910005380A (ko) | 1991-03-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8332 | No legal effect for de |