DE69017802T2 - Dünnfilmkondensator und dessen Herstellungsverfahren. - Google Patents

Dünnfilmkondensator und dessen Herstellungsverfahren.

Info

Publication number
DE69017802T2
DE69017802T2 DE69017802T DE69017802T DE69017802T2 DE 69017802 T2 DE69017802 T2 DE 69017802T2 DE 69017802 T DE69017802 T DE 69017802T DE 69017802 T DE69017802 T DE 69017802T DE 69017802 T2 DE69017802 T2 DE 69017802T2
Authority
DE
Germany
Prior art keywords
thin film
manufacturing process
film capacitor
capacitor
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69017802T
Other languages
English (en)
Other versions
DE69017802D1 (de
Inventor
Yoichi Miyasaka
Shogo Matsubara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1226031A external-priority patent/JPH0644601B2/ja
Priority claimed from JP23848489A external-priority patent/JPH0687491B2/ja
Priority claimed from JP2051010A external-priority patent/JPH0712074B2/ja
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69017802D1 publication Critical patent/DE69017802D1/de
Application granted granted Critical
Publication of DE69017802T2 publication Critical patent/DE69017802T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/43—Electric condenser making
    • Y10T29/435—Solid dielectric type
DE69017802T 1989-08-30 1990-08-30 Dünnfilmkondensator und dessen Herstellungsverfahren. Expired - Fee Related DE69017802T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP1226031A JPH0644601B2 (ja) 1989-08-30 1989-08-30 薄膜コンデンサおよびその製造方法
JP23848489A JPH0687491B2 (ja) 1989-09-14 1989-09-14 薄膜コンデンサ
JP2051010A JPH0712074B2 (ja) 1990-03-01 1990-03-01 薄膜コンデンサ及びその製造方法

Publications (2)

Publication Number Publication Date
DE69017802D1 DE69017802D1 (de) 1995-04-20
DE69017802T2 true DE69017802T2 (de) 1995-09-07

Family

ID=27294164

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69017802T Expired - Fee Related DE69017802T2 (de) 1989-08-30 1990-08-30 Dünnfilmkondensator und dessen Herstellungsverfahren.

Country Status (3)

Country Link
US (1) US5053917A (de)
EP (1) EP0415751B1 (de)
DE (1) DE69017802T2 (de)

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US5688565A (en) * 1988-12-27 1997-11-18 Symetrix Corporation Misted deposition method of fabricating layered superlattice materials
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JP3407204B2 (ja) * 1992-07-23 2003-05-19 オリンパス光学工業株式会社 強誘電体集積回路及びその製造方法
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EP0618597B1 (de) 1993-03-31 1997-07-16 Texas Instruments Incorporated Leicht donatoren-dotierte Elektroden für Materialien mit hoher dielektrischer Konstante
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US6791131B1 (en) * 1993-04-02 2004-09-14 Micron Technology, Inc. Method for forming a storage cell capacitor compatible with high dielectric constant materials
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US5489548A (en) * 1994-08-01 1996-02-06 Texas Instruments Incorporated Method of forming high-dielectric-constant material electrodes comprising sidewall spacers
US5622893A (en) * 1994-08-01 1997-04-22 Texas Instruments Incorporated Method of forming conductive noble-metal-insulator-alloy barrier layer for high-dielectric-constant material electrodes
US5589284A (en) * 1994-08-01 1996-12-31 Texas Instruments Incorporated Electrodes comprising conductive perovskite-seed layers for perovskite dielectrics
US5504041A (en) * 1994-08-01 1996-04-02 Texas Instruments Incorporated Conductive exotic-nitride barrier layer for high-dielectric-constant materials
US5554564A (en) * 1994-08-01 1996-09-10 Texas Instruments Incorporated Pre-oxidizing high-dielectric-constant material electrodes
US5585300A (en) * 1994-08-01 1996-12-17 Texas Instruments Incorporated Method of making conductive amorphous-nitride barrier layer for high-dielectric-constant material electrodes
US5566045A (en) * 1994-08-01 1996-10-15 Texas Instruments, Inc. High-dielectric-constant material electrodes comprising thin platinum layers
CN1075243C (zh) * 1994-12-28 2001-11-21 松下电器产业株式会社 集成电路用电容元件及其制造方法
US5668040A (en) * 1995-03-20 1997-09-16 Lg Semicon Co., Ltd. Method for forming a semiconductor device electrode which also serves as a diffusion barrier
JP3683972B2 (ja) * 1995-03-22 2005-08-17 三菱電機株式会社 半導体装置
KR0141160B1 (ko) * 1995-03-22 1998-06-01 김광호 강유전체 메모리 장치 및 그 제조방법
US5874364A (en) * 1995-03-27 1999-02-23 Fujitsu Limited Thin film deposition method, capacitor device and method for fabricating the same, and semiconductor device and method for fabricating the same
EP0739030A3 (de) * 1995-04-19 1998-07-08 Nec Corporation Hochintegrierter Dünnschichtkondensator mit einer Schicht hoher Dielektrizitätskonstante
JPH11511293A (ja) * 1995-06-07 1999-09-28 サイメトリックス コーポレイション 基板および配線層を備え、基板と配線層との間にバッファ層を有する集積回路
US5793076A (en) * 1995-09-21 1998-08-11 Micron Technology, Inc. Scalable high dielectric constant capacitor
JP3188179B2 (ja) * 1995-09-26 2001-07-16 シャープ株式会社 強誘電体薄膜素子の製造方法及び強誘電体メモリ素子の製造方法
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US5838605A (en) * 1996-03-20 1998-11-17 Ramtron International Corporation Iridium oxide local interconnect
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JP3570153B2 (ja) * 1997-04-28 2004-09-29 ソニー株式会社 電子材料、その製造方法、誘電体キャパシタ、不揮発性メモリおよび半導体装置
US7115461B2 (en) * 1997-07-24 2006-10-03 Texas Instruments Incorporated High permittivity silicate gate dielectric
US6841439B1 (en) * 1997-07-24 2005-01-11 Texas Instruments Incorporated High permittivity silicate gate dielectric
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JPS63312613A (ja) * 1987-06-15 1988-12-21 Nec Corp 単板コンデンサ−
US4982309A (en) * 1989-07-17 1991-01-01 National Semiconductor Corporation Electrodes for electrical ceramic oxide devices

Also Published As

Publication number Publication date
DE69017802D1 (de) 1995-04-20
EP0415751B1 (de) 1995-03-15
EP0415751A1 (de) 1991-03-06
US5053917A (en) 1991-10-01

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