DE69009216D1 - Epitaxialstruktur für lichtemittierende Halbleiteranordnungen und lichtemittierende Halbleiteranordnung mit dieser Struktur. - Google Patents
Epitaxialstruktur für lichtemittierende Halbleiteranordnungen und lichtemittierende Halbleiteranordnung mit dieser Struktur.Info
- Publication number
- DE69009216D1 DE69009216D1 DE69009216T DE69009216T DE69009216D1 DE 69009216 D1 DE69009216 D1 DE 69009216D1 DE 69009216 T DE69009216 T DE 69009216T DE 69009216 T DE69009216 T DE 69009216T DE 69009216 D1 DE69009216 D1 DE 69009216D1
- Authority
- DE
- Germany
- Prior art keywords
- light emitting
- semiconductor light
- emitting device
- emitting devices
- epitaxial structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
- H01L21/02661—In-situ cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
- H01S5/32025—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth non-polar orientation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/04—MOCVD or MOVPE
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0213—Sapphire, quartz or diamond based substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1033279A JP2704181B2 (ja) | 1989-02-13 | 1989-02-13 | 化合物半導体単結晶薄膜の成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69009216D1 true DE69009216D1 (de) | 1994-07-07 |
| DE69009216T2 DE69009216T2 (de) | 1995-03-02 |
Family
ID=12382091
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69009216T Expired - Lifetime DE69009216T2 (de) | 1989-02-13 | 1990-02-10 | Epitaxialstruktur für lichtemittierende Halbleiteranordnungen und lichtemittierende Halbleiteranordnung mit dieser Struktur. |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5006908A (de) |
| EP (1) | EP0383215B1 (de) |
| JP (1) | JP2704181B2 (de) |
| DE (1) | DE69009216T2 (de) |
Families Citing this family (74)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6830992B1 (en) * | 1990-02-28 | 2004-12-14 | Toyoda Gosei Co., Ltd. | Method for manufacturing a gallium nitride group compound semiconductor |
| US5278433A (en) * | 1990-02-28 | 1994-01-11 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer |
| US6362017B1 (en) | 1990-02-28 | 2002-03-26 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride group compound |
| DE69126152T2 (de) * | 1990-02-28 | 1997-11-13 | Toyoda Gosei Kk | Lichtemittierende Halbleitervorrichtung mit Gallium-Nitrid-Verbindung |
| JP2593960B2 (ja) * | 1990-11-29 | 1997-03-26 | シャープ株式会社 | 化合物半導体発光素子とその製造方法 |
| JPH089518B2 (ja) * | 1990-12-28 | 1996-01-31 | 名古屋大学長 | 化合物半導体単結晶の作製方法 |
| US5173751A (en) * | 1991-01-21 | 1992-12-22 | Pioneer Electronic Corporation | Semiconductor light emitting device |
| US6953703B2 (en) | 1991-03-18 | 2005-10-11 | The Trustees Of Boston University | Method of making a semiconductor device with exposure of sapphire substrate to activated nitrogen |
| WO1992016966A1 (en) * | 1991-03-18 | 1992-10-01 | Boston University | A method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films |
| US5633192A (en) * | 1991-03-18 | 1997-05-27 | Boston University | Method for epitaxially growing gallium nitride layers |
| JP3352712B2 (ja) * | 1991-12-18 | 2002-12-03 | 浩 天野 | 窒化ガリウム系半導体素子及びその製造方法 |
| JP2778349B2 (ja) * | 1992-04-10 | 1998-07-23 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体の電極 |
| EP0579897B1 (de) * | 1992-07-23 | 2003-10-15 | Toyoda Gosei Co., Ltd. | Lichtemittierende Vorrichtung aus einer Verbindung der Galliumnitridgruppe |
| US6440823B1 (en) | 1994-01-27 | 2002-08-27 | Advanced Technology Materials, Inc. | Low defect density (Ga, Al, In)N and HVPE process for making same |
| US5909040A (en) * | 1994-03-09 | 1999-06-01 | Kabushiki Kaisha Toshiba | Semiconductor device including quaternary buffer layer with pinholes |
| US6130147A (en) * | 1994-04-07 | 2000-10-10 | Sdl, Inc. | Methods for forming group III-V arsenide-nitride semiconductor materials |
| JP2698796B2 (ja) * | 1994-04-20 | 1998-01-19 | 豊田合成株式会社 | ３族窒化物半導体発光素子 |
| US6136626A (en) * | 1994-06-09 | 2000-10-24 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light-emitting device and production method thereof |
| EP0772247B1 (de) * | 1994-07-21 | 2004-09-15 | Matsushita Electric Industrial Co., Ltd. | Lichtemittierende halbleitervorrichtung und herstellungsverfahren |
| KR960007835A (ko) * | 1994-08-22 | 1996-03-22 | 강박광 | 청색 발광성 질화갈륨 적층막의 제조방법 |
| US6996150B1 (en) | 1994-09-14 | 2006-02-07 | Rohm Co., Ltd. | Semiconductor light emitting device and manufacturing method therefor |
| US5787104A (en) | 1995-01-19 | 1998-07-28 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting element and method for fabricating the same |
| JP3557011B2 (ja) | 1995-03-30 | 2004-08-25 | 株式会社東芝 | 半導体発光素子、及びその製造方法 |
| US5625202A (en) * | 1995-06-08 | 1997-04-29 | University Of Central Florida | Modified wurtzite structure oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth |
| JP3564811B2 (ja) * | 1995-07-24 | 2004-09-15 | 豊田合成株式会社 | ３族窒化物半導体発光素子 |
| DE69636088T2 (de) * | 1995-11-06 | 2006-11-23 | Nichia Corp., Anan | Halbleitervorrichtung aus einer Nitridverbindung |
| SG74012A1 (en) * | 1996-05-10 | 2000-07-18 | Sumitomo Chemical Co | Device for production of compound semiconductor |
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| JP3770014B2 (ja) | 1999-02-09 | 2006-04-26 | 日亜化学工業株式会社 | 窒化物半導体素子 |
| EP1168539B1 (de) * | 1999-03-04 | 2009-12-16 | Nichia Corporation | Nitridhalbleiterlaserelement |
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| US6590336B1 (en) | 1999-08-31 | 2003-07-08 | Murata Manufacturing Co., Ltd. | Light emitting device having a polar plane piezoelectric film and manufacture thereof |
| JP4897133B2 (ja) * | 1999-12-09 | 2012-03-14 | ソニー株式会社 | 半導体発光素子、その製造方法および配設基板 |
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| US3740622A (en) * | 1972-07-10 | 1973-06-19 | Rca Corp | Electroluminescent semiconductor device for generating ultra violet radiation |
| JPS5815480B2 (ja) * | 1975-08-19 | 1983-03-25 | 松下電器産業株式会社 | チツカガリウムタンケツシヨウノ セイチヨウホウホウ |
| SU773795A1 (ru) * | 1977-04-01 | 1980-10-23 | Предприятие П/Я А-1172 | Светоизлучающий прибор |
| JPS553834A (en) * | 1978-06-23 | 1980-01-11 | Yasuko Shiomi | Hand shower with water-stop valve |
| JPS54119400A (en) * | 1978-07-11 | 1979-09-17 | Sumitomo Electric Ind Ltd | Production of nitrogen compound of 3b group element |
| US4396929A (en) * | 1979-10-19 | 1983-08-02 | Matsushita Electric Industrial Company, Ltd. | Gallium nitride light-emitting element and method of manufacturing the same |
| JPS6055996B2 (ja) * | 1979-12-05 | 1985-12-07 | 松下電器産業株式会社 | 電場発光半導体装置 |
| JPS5710280A (en) * | 1980-06-23 | 1982-01-19 | Futaba Corp | Gan light emitting element |
| JPS5948794B2 (ja) * | 1982-09-27 | 1984-11-28 | 工業技術院長 | 窒化ガリウム単結晶膜の製造法 |
| JPS6026079A (ja) * | 1983-07-23 | 1985-02-08 | Nitto Electric Ind Co Ltd | 感圧接着剤の改質方法 |
| JPS6118184A (ja) * | 1984-07-04 | 1986-01-27 | Agency Of Ind Science & Technol | 発光素子 |
| US4614961A (en) * | 1984-10-09 | 1986-09-30 | Honeywell Inc. | Tunable cut-off UV detector based on the aluminum gallium nitride material system |
| JPS61179527A (ja) * | 1985-02-04 | 1986-08-12 | Nippon Telegr & Teleph Corp <Ntt> | 化合物半導体単結晶膜の成長方法および装置 |
| US4616248A (en) * | 1985-05-20 | 1986-10-07 | Honeywell Inc. | UV photocathode using negative electron affinity effect in Alx Ga1 N |
| JPS6230696A (ja) * | 1985-07-31 | 1987-02-09 | Sharp Corp | 広禁制帯幅半導体結晶の製造方法 |
| JPS62119196A (ja) * | 1985-11-18 | 1987-05-30 | Univ Nagoya | 化合物半導体の成長方法 |
| JPS62119940A (ja) * | 1985-11-19 | 1987-06-01 | Sharp Corp | 半導体基板 |
| US4740606A (en) * | 1986-07-01 | 1988-04-26 | Morton Thiokol, Inc. | Gallium hydride/trialkylamine adducts, and their use in deposition of III-V compound films |
| JPS63188938A (ja) * | 1987-01-31 | 1988-08-04 | Toyoda Gosei Co Ltd | 窒化ガリウム系化合物半導体の気相成長方法 |
| EP0460710B1 (de) * | 1987-01-31 | 1994-12-07 | Toyoda Gosei Co., Ltd. | Galliumnitridartige Halbleiterverbindung und daraus bestehende lichtemittierende Vorrichtung sowie Verfahren zu deren Herstellung |
| JPH0614564B2 (ja) * | 1987-07-13 | 1994-02-23 | 日本電信電話株式会社 | 半導体発光素子 |
-
1989
- 1989-02-13 JP JP1033279A patent/JP2704181B2/ja not_active Expired - Lifetime
-
1990
- 1990-02-10 EP EP90102634A patent/EP0383215B1/de not_active Expired - Lifetime
- 1990-02-10 DE DE69009216T patent/DE69009216T2/de not_active Expired - Lifetime
- 1990-02-12 US US07/479,068 patent/US5006908A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0383215B1 (de) | 1994-06-01 |
| EP0383215A2 (de) | 1990-08-22 |
| US5006908A (en) | 1991-04-09 |
| EP0383215A3 (de) | 1991-01-09 |
| JPH02211620A (ja) | 1990-08-22 |
| DE69009216T2 (de) | 1995-03-02 |
| JP2704181B2 (ja) | 1998-01-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8332 | No legal effect for de | ||
| 8370 | Indication of lapse of patent is to be deleted | ||
| 8364 | No opposition during term of opposition |