DE68928402D1 - Verfahren zur Entfernung einer Oxidschicht auf einem Substrat - Google Patents

Verfahren zur Entfernung einer Oxidschicht auf einem Substrat

Info

Publication number
DE68928402D1
DE68928402D1 DE68928402T DE68928402T DE68928402D1 DE 68928402 D1 DE68928402 D1 DE 68928402D1 DE 68928402 T DE68928402 T DE 68928402T DE 68928402 T DE68928402 T DE 68928402T DE 68928402 D1 DE68928402 D1 DE 68928402D1
Authority
DE
Germany
Prior art keywords
substrate
oxide layer
oxide
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68928402T
Other languages
English (en)
Other versions
DE68928402T2 (de
Inventor
Hirotaka Nishino
Nobuo Hayasaka
Haruo Okano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE68928402D1 publication Critical patent/DE68928402D1/de
Publication of DE68928402T2 publication Critical patent/DE68928402T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
DE68928402T 1988-12-27 1989-12-27 Verfahren zur Entfernung einer Oxidschicht auf einem Substrat Expired - Fee Related DE68928402T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32759488 1988-12-27

Publications (2)

Publication Number Publication Date
DE68928402D1 true DE68928402D1 (de) 1997-11-27
DE68928402T2 DE68928402T2 (de) 1998-03-12

Family

ID=18200802

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68928402T Expired - Fee Related DE68928402T2 (de) 1988-12-27 1989-12-27 Verfahren zur Entfernung einer Oxidschicht auf einem Substrat

Country Status (3)

Country Link
US (1) US5030319A (de)
EP (1) EP0376252B1 (de)
DE (1) DE68928402T2 (de)

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US5030319A (en) 1991-07-09

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