DE68925244D1 - Verfahren zur Herstellung von Fotolackstrukturen unter Verwendung eines chemisch verstärkten und metallisierten Materials - Google Patents
Verfahren zur Herstellung von Fotolackstrukturen unter Verwendung eines chemisch verstärkten und metallisierten MaterialsInfo
- Publication number
- DE68925244D1 DE68925244D1 DE68925244T DE68925244T DE68925244D1 DE 68925244 D1 DE68925244 D1 DE 68925244D1 DE 68925244 T DE68925244 T DE 68925244T DE 68925244 T DE68925244 T DE 68925244T DE 68925244 D1 DE68925244 D1 DE 68925244D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- chemically reinforced
- photoresist structures
- metallized material
- metallized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0041—Photosensitive materials providing an etching agent upon exposure
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/226,282 US4921778A (en) | 1988-07-29 | 1988-07-29 | Photoresist pattern fabrication employing chemically amplified metalized material |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68925244D1 true DE68925244D1 (de) | 1996-02-08 |
DE68925244T2 DE68925244T2 (de) | 1996-08-14 |
Family
ID=22848289
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68925244T Expired - Fee Related DE68925244T2 (de) | 1988-07-29 | 1989-07-25 | Verfahren zur Herstellung von Fotolackstrukturen unter Verwendung eines chemisch verstärkten und metallisierten Materials |
Country Status (4)
Country | Link |
---|---|
US (1) | US4921778A (de) |
EP (1) | EP0352739B1 (de) |
JP (1) | JPH02289858A (de) |
DE (1) | DE68925244T2 (de) |
Families Citing this family (78)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5108875A (en) * | 1988-07-29 | 1992-04-28 | Shipley Company Inc. | Photoresist pattern fabrication employing chemically amplified metalized material |
US5079131A (en) * | 1988-08-29 | 1992-01-07 | Shipley Company Inc. | Method of forming positive images through organometallic treatment of negative acid hardening cross-linked photoresist formulations |
US5041362A (en) * | 1989-07-06 | 1991-08-20 | Texas Instruments Incorporated | Dry developable resist etch chemistry |
US5166038A (en) * | 1989-07-27 | 1992-11-24 | International Business Machines Corporation | Etch resistant pattern formation via interfacial silylation process |
US5316895A (en) * | 1990-10-31 | 1994-05-31 | Texas Instruments Incorporated | Photolithographic method using non-photoactive resins |
DE59108083D1 (de) * | 1990-12-20 | 1996-09-19 | Siemens Ag | Photolithographische Strukturerzeugung |
US5962196A (en) * | 1991-04-08 | 1999-10-05 | Intel Corporation | Deep ultraviolet light photoresist processing |
US6165697A (en) * | 1991-11-15 | 2000-12-26 | Shipley Company, L.L.C. | Antihalation compositions |
US6472128B2 (en) | 1996-04-30 | 2002-10-29 | Shipley Company, L.L.C. | Antihalation compositions |
US6528235B2 (en) | 1991-11-15 | 2003-03-04 | Shipley Company, L.L.C. | Antihalation compositions |
US6773864B1 (en) * | 1991-11-15 | 2004-08-10 | Shipley Company, L.L.C. | Antihalation compositions |
US5366852A (en) * | 1992-09-21 | 1994-11-22 | Shipley Company, Inc. | Methods for treating photoresists |
US5480748A (en) * | 1992-10-21 | 1996-01-02 | International Business Machines Corporation | Protection of aluminum metallization against chemical attack during photoresist development |
CN1149341A (zh) * | 1994-05-25 | 1997-05-07 | 西门子公司 | 可干法显影的正性抗蚀剂 |
US6117622A (en) * | 1997-09-05 | 2000-09-12 | Fusion Systems Corporation | Controlled shrinkage of photoresist |
US6057084A (en) * | 1997-10-03 | 2000-05-02 | Fusion Systems Corporation | Controlled amine poisoning for reduced shrinkage of features formed in photoresist |
US6096484A (en) * | 1997-10-15 | 2000-08-01 | Kabushiki Kaisha Toshiba | Pattern forming method using chemically amplified resist and apparatus for treating chemically amplified resist |
US5981143A (en) * | 1997-11-26 | 1999-11-09 | Trw Inc. | Chemically treated photoresist for withstanding ion bombarded processing |
US6027853A (en) * | 1998-01-16 | 2000-02-22 | Olin Microelectronic Chemicals, Inc. | Process for preparing a radiation-sensitive composition |
AU3964199A (en) * | 1998-04-07 | 1999-10-25 | Euv Limited Liability Corporation | Thin layer imaging process for microlithography using radiation at strongly attenuated wavelengths |
KR100804873B1 (ko) * | 1999-06-10 | 2008-02-20 | 얼라이드시그날 인코퍼레이티드 | 포토리소그래피용 sog 반사방지 코팅 |
US6873087B1 (en) * | 1999-10-29 | 2005-03-29 | Board Of Regents, The University Of Texas System | High precision orientation alignment and gap control stages for imprint lithography processes |
EP2264522A3 (de) * | 2000-07-16 | 2011-12-14 | The Board of Regents of The University of Texas System | Verfahren zur Bildung einer Struktur auf einem Substrat |
WO2002006902A2 (en) | 2000-07-17 | 2002-01-24 | Board Of Regents, The University Of Texas System | Method and system of automatic fluid dispensing for imprint lithography processes |
US6368400B1 (en) * | 2000-07-17 | 2002-04-09 | Honeywell International | Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography |
KR20030040378A (ko) * | 2000-08-01 | 2003-05-22 | 보드 오브 리전츠, 더 유니버시티 오브 텍사스 시스템 | 임프린트 리소그래피를 위한 투명한 템플릿과 기판사이의고정확성 갭 및 방향설정 감지 방법 |
AU2001286573A1 (en) * | 2000-08-21 | 2002-03-04 | Board Of Regents, The University Of Texas System | Flexure based macro motion translation stage |
WO2002067055A2 (en) * | 2000-10-12 | 2002-08-29 | Board Of Regents, The University Of Texas System | Template for room temperature, low pressure micro- and nano-imprint lithography |
US20050274219A1 (en) * | 2004-06-01 | 2005-12-15 | Molecular Imprints, Inc. | Method and system to control movement of a body for nano-scale manufacturing |
US6605519B2 (en) * | 2001-05-02 | 2003-08-12 | Unaxis Usa, Inc. | Method for thin film lift-off processes using lateral extended etching masks and device |
US6964793B2 (en) * | 2002-05-16 | 2005-11-15 | Board Of Regents, The University Of Texas System | Method for fabricating nanoscale patterns in light curable compositions using an electric field |
US7037639B2 (en) * | 2002-05-01 | 2006-05-02 | Molecular Imprints, Inc. | Methods of manufacturing a lithography template |
US20030235787A1 (en) * | 2002-06-24 | 2003-12-25 | Watts Michael P.C. | Low viscosity high resolution patterning material |
US6926929B2 (en) | 2002-07-09 | 2005-08-09 | Molecular Imprints, Inc. | System and method for dispensing liquids |
US6900881B2 (en) | 2002-07-11 | 2005-05-31 | Molecular Imprints, Inc. | Step and repeat imprint lithography systems |
US7077992B2 (en) | 2002-07-11 | 2006-07-18 | Molecular Imprints, Inc. | Step and repeat imprint lithography processes |
US6932934B2 (en) | 2002-07-11 | 2005-08-23 | Molecular Imprints, Inc. | Formation of discontinuous films during an imprint lithography process |
US6908861B2 (en) * | 2002-07-11 | 2005-06-21 | Molecular Imprints, Inc. | Method for imprint lithography using an electric field |
US7019819B2 (en) | 2002-11-13 | 2006-03-28 | Molecular Imprints, Inc. | Chucking system for modulating shapes of substrates |
US7070405B2 (en) * | 2002-08-01 | 2006-07-04 | Molecular Imprints, Inc. | Alignment systems for imprint lithography |
US7027156B2 (en) | 2002-08-01 | 2006-04-11 | Molecular Imprints, Inc. | Scatterometry alignment for imprint lithography |
US6916584B2 (en) | 2002-08-01 | 2005-07-12 | Molecular Imprints, Inc. | Alignment methods for imprint lithography |
US7071088B2 (en) * | 2002-08-23 | 2006-07-04 | Molecular Imprints, Inc. | Method for fabricating bulbous-shaped vias |
US8349241B2 (en) | 2002-10-04 | 2013-01-08 | Molecular Imprints, Inc. | Method to arrange features on a substrate to replicate features having minimal dimensional variability |
US6980282B2 (en) | 2002-12-11 | 2005-12-27 | Molecular Imprints, Inc. | Method for modulating shapes of substrates |
US6929762B2 (en) * | 2002-11-13 | 2005-08-16 | Molecular Imprints, Inc. | Method of reducing pattern distortions during imprint lithography processes |
US6871558B2 (en) * | 2002-12-12 | 2005-03-29 | Molecular Imprints, Inc. | Method for determining characteristics of substrate employing fluid geometries |
US7452574B2 (en) * | 2003-02-27 | 2008-11-18 | Molecular Imprints, Inc. | Method to reduce adhesion between a polymerizable layer and a substrate employing a fluorine-containing layer |
US7179396B2 (en) * | 2003-03-25 | 2007-02-20 | Molecular Imprints, Inc. | Positive tone bi-layer imprint lithography method |
US7122079B2 (en) | 2004-02-27 | 2006-10-17 | Molecular Imprints, Inc. | Composition for an etching mask comprising a silicon-containing material |
US7396475B2 (en) * | 2003-04-25 | 2008-07-08 | Molecular Imprints, Inc. | Method of forming stepped structures employing imprint lithography |
US7223518B2 (en) * | 2003-06-06 | 2007-05-29 | Georgia Tech Research Corporation | Compositions and methods of use thereof |
US7157036B2 (en) | 2003-06-17 | 2007-01-02 | Molecular Imprints, Inc | Method to reduce adhesion between a conformable region and a pattern of a mold |
US7136150B2 (en) * | 2003-09-25 | 2006-11-14 | Molecular Imprints, Inc. | Imprint lithography template having opaque alignment marks |
US7090716B2 (en) * | 2003-10-02 | 2006-08-15 | Molecular Imprints, Inc. | Single phase fluid imprint lithography method |
US8211214B2 (en) * | 2003-10-02 | 2012-07-03 | Molecular Imprints, Inc. | Single phase fluid imprint lithography method |
US20050084804A1 (en) * | 2003-10-16 | 2005-04-21 | Molecular Imprints, Inc. | Low surface energy templates |
US8053159B2 (en) | 2003-11-18 | 2011-11-08 | Honeywell International Inc. | Antireflective coatings for via fill and photolithography applications and methods of preparation thereof |
US8076386B2 (en) | 2004-02-23 | 2011-12-13 | Molecular Imprints, Inc. | Materials for imprint lithography |
US7906180B2 (en) | 2004-02-27 | 2011-03-15 | Molecular Imprints, Inc. | Composition for an etching mask comprising a silicon-containing material |
US20050275311A1 (en) * | 2004-06-01 | 2005-12-15 | Molecular Imprints, Inc. | Compliant device for nano-scale manufacturing |
US20060145398A1 (en) * | 2004-12-30 | 2006-07-06 | Board Of Regents, The University Of Texas System | Release layer comprising diamond-like carbon (DLC) or doped DLC with tunable composition for imprint lithography templates and contact masks |
US7906058B2 (en) * | 2005-12-01 | 2011-03-15 | Molecular Imprints, Inc. | Bifurcated contact printing technique |
US7803308B2 (en) * | 2005-12-01 | 2010-09-28 | Molecular Imprints, Inc. | Technique for separating a mold from solidified imprinting material |
JP4987012B2 (ja) * | 2005-12-08 | 2012-07-25 | モレキュラー・インプリンツ・インコーポレーテッド | 基板の両面パターニングする方法及びシステム |
US7670530B2 (en) * | 2006-01-20 | 2010-03-02 | Molecular Imprints, Inc. | Patterning substrates employing multiple chucks |
WO2007117524A2 (en) * | 2006-04-03 | 2007-10-18 | Molecular Imprints, Inc. | Method of concurrently patterning a substrate having a plurality of fields and alignment marks |
US8850980B2 (en) | 2006-04-03 | 2014-10-07 | Canon Nanotechnologies, Inc. | Tessellated patterns in imprint lithography |
US8142850B2 (en) | 2006-04-03 | 2012-03-27 | Molecular Imprints, Inc. | Patterning a plurality of fields on a substrate to compensate for differing evaporation times |
US7802978B2 (en) | 2006-04-03 | 2010-09-28 | Molecular Imprints, Inc. | Imprinting of partial fields at the edge of the wafer |
US7547398B2 (en) * | 2006-04-18 | 2009-06-16 | Molecular Imprints, Inc. | Self-aligned process for fabricating imprint templates containing variously etched features |
US8012395B2 (en) * | 2006-04-18 | 2011-09-06 | Molecular Imprints, Inc. | Template having alignment marks formed of contrast material |
US8642246B2 (en) | 2007-02-26 | 2014-02-04 | Honeywell International Inc. | Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof |
US8557877B2 (en) | 2009-06-10 | 2013-10-15 | Honeywell International Inc. | Anti-reflective coatings for optically transparent substrates |
US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
WO2014159427A1 (en) | 2013-03-14 | 2014-10-02 | Applied Materials, Inc | Resist hardening and development processes for semiconductor device manufacturing |
JP6196739B2 (ja) | 2014-01-28 | 2017-09-13 | 東京エレクトロン株式会社 | 原子層堆積を用いずに自己整合ダブルパターニングを行う方法 |
EP3194502A4 (de) | 2015-04-13 | 2018-05-16 | Honeywell International Inc. | Polysiloxanformulierungen und beschichtungen für optoelektronische anwendungen |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5723937A (en) * | 1980-07-17 | 1982-02-08 | Matsushita Electric Ind Co Ltd | Photographic etching method |
US4396704A (en) * | 1981-04-22 | 1983-08-02 | Bell Telephone Laboratories, Incorporated | Solid state devices produced by organometallic plasma developed resists |
US4357369A (en) * | 1981-11-10 | 1982-11-02 | Rca Corporation | Method of plasma etching a substrate |
EP0091651B1 (de) * | 1982-04-12 | 1988-08-03 | Nippon Telegraph And Telephone Corporation | Verfahren zur Herstellung von Mikrobildern |
US4433044A (en) * | 1982-11-15 | 1984-02-21 | Rca Corporation | Dry developable positive photoresists |
US4430153A (en) * | 1983-06-30 | 1984-02-07 | International Business Machines Corporation | Method of forming an RIE etch barrier by in situ conversion of a silicon containing alkyl polyamide/polyimide |
US4552833A (en) * | 1984-05-14 | 1985-11-12 | International Business Machines Corporation | Radiation sensitive and oxygen plasma developable resist |
JPS6144715A (ja) * | 1984-08-08 | 1986-03-04 | Toyo Soda Mfg Co Ltd | 合成モルデナイト成形体の製造法 |
JPS61227027A (ja) * | 1985-04-02 | 1986-10-09 | Kakuichi Technical Dev Service Kk | 可撓管の製法 |
US4613398A (en) * | 1985-06-06 | 1986-09-23 | International Business Machines Corporation | Formation of etch-resistant resists through preferential permeation |
JP2607870B2 (ja) * | 1985-07-26 | 1997-05-07 | 富士写真フイルム株式会社 | 画像形成方法 |
CA1308596C (en) * | 1986-01-13 | 1992-10-13 | Rohm And Haas Company | Microplastic structures and method of manufacture |
-
1988
- 1988-07-29 US US07/226,282 patent/US4921778A/en not_active Expired - Fee Related
-
1989
- 1989-07-25 EP EP89113699A patent/EP0352739B1/de not_active Expired - Lifetime
- 1989-07-25 DE DE68925244T patent/DE68925244T2/de not_active Expired - Fee Related
- 1989-07-29 JP JP1197906A patent/JPH02289858A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
DE68925244T2 (de) | 1996-08-14 |
EP0352739A3 (de) | 1991-09-11 |
JPH02289858A (ja) | 1990-11-29 |
EP0352739A2 (de) | 1990-01-31 |
EP0352739B1 (de) | 1995-12-27 |
US4921778A (en) | 1990-05-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |