DE68925244D1 - Verfahren zur Herstellung von Fotolackstrukturen unter Verwendung eines chemisch verstärkten und metallisierten Materials - Google Patents

Verfahren zur Herstellung von Fotolackstrukturen unter Verwendung eines chemisch verstärkten und metallisierten Materials

Info

Publication number
DE68925244D1
DE68925244D1 DE68925244T DE68925244T DE68925244D1 DE 68925244 D1 DE68925244 D1 DE 68925244D1 DE 68925244 T DE68925244 T DE 68925244T DE 68925244 T DE68925244 T DE 68925244T DE 68925244 D1 DE68925244 D1 DE 68925244D1
Authority
DE
Germany
Prior art keywords
production
chemically reinforced
photoresist structures
metallized material
metallized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68925244T
Other languages
English (en)
Other versions
DE68925244T2 (de
Inventor
James W Thackeray
Stephen A Fine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shipley Co Inc
Original Assignee
Shipley Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shipley Co Inc filed Critical Shipley Co Inc
Application granted granted Critical
Publication of DE68925244D1 publication Critical patent/DE68925244D1/de
Publication of DE68925244T2 publication Critical patent/DE68925244T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0041Photosensitive materials providing an etching agent upon exposure
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0755Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/265Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
DE68925244T 1988-07-29 1989-07-25 Verfahren zur Herstellung von Fotolackstrukturen unter Verwendung eines chemisch verstärkten und metallisierten Materials Expired - Fee Related DE68925244T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/226,282 US4921778A (en) 1988-07-29 1988-07-29 Photoresist pattern fabrication employing chemically amplified metalized material

Publications (2)

Publication Number Publication Date
DE68925244D1 true DE68925244D1 (de) 1996-02-08
DE68925244T2 DE68925244T2 (de) 1996-08-14

Family

ID=22848289

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68925244T Expired - Fee Related DE68925244T2 (de) 1988-07-29 1989-07-25 Verfahren zur Herstellung von Fotolackstrukturen unter Verwendung eines chemisch verstärkten und metallisierten Materials

Country Status (4)

Country Link
US (1) US4921778A (de)
EP (1) EP0352739B1 (de)
JP (1) JPH02289858A (de)
DE (1) DE68925244T2 (de)

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US5079131A (en) * 1988-08-29 1992-01-07 Shipley Company Inc. Method of forming positive images through organometallic treatment of negative acid hardening cross-linked photoresist formulations
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US5166038A (en) * 1989-07-27 1992-11-24 International Business Machines Corporation Etch resistant pattern formation via interfacial silylation process
US5316895A (en) * 1990-10-31 1994-05-31 Texas Instruments Incorporated Photolithographic method using non-photoactive resins
DE59108083D1 (de) * 1990-12-20 1996-09-19 Siemens Ag Photolithographische Strukturerzeugung
US5962196A (en) * 1991-04-08 1999-10-05 Intel Corporation Deep ultraviolet light photoresist processing
US6165697A (en) * 1991-11-15 2000-12-26 Shipley Company, L.L.C. Antihalation compositions
US6472128B2 (en) 1996-04-30 2002-10-29 Shipley Company, L.L.C. Antihalation compositions
US6528235B2 (en) 1991-11-15 2003-03-04 Shipley Company, L.L.C. Antihalation compositions
US6773864B1 (en) * 1991-11-15 2004-08-10 Shipley Company, L.L.C. Antihalation compositions
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US5480748A (en) * 1992-10-21 1996-01-02 International Business Machines Corporation Protection of aluminum metallization against chemical attack during photoresist development
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US6096484A (en) * 1997-10-15 2000-08-01 Kabushiki Kaisha Toshiba Pattern forming method using chemically amplified resist and apparatus for treating chemically amplified resist
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US6873087B1 (en) * 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
EP2264522A3 (de) * 2000-07-16 2011-12-14 The Board of Regents of The University of Texas System Verfahren zur Bildung einer Struktur auf einem Substrat
WO2002006902A2 (en) 2000-07-17 2002-01-24 Board Of Regents, The University Of Texas System Method and system of automatic fluid dispensing for imprint lithography processes
US6368400B1 (en) * 2000-07-17 2002-04-09 Honeywell International Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography
KR20030040378A (ko) * 2000-08-01 2003-05-22 보드 오브 리전츠, 더 유니버시티 오브 텍사스 시스템 임프린트 리소그래피를 위한 투명한 템플릿과 기판사이의고정확성 갭 및 방향설정 감지 방법
AU2001286573A1 (en) * 2000-08-21 2002-03-04 Board Of Regents, The University Of Texas System Flexure based macro motion translation stage
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US20050274219A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Method and system to control movement of a body for nano-scale manufacturing
US6605519B2 (en) * 2001-05-02 2003-08-12 Unaxis Usa, Inc. Method for thin film lift-off processes using lateral extended etching masks and device
US6964793B2 (en) * 2002-05-16 2005-11-15 Board Of Regents, The University Of Texas System Method for fabricating nanoscale patterns in light curable compositions using an electric field
US7037639B2 (en) * 2002-05-01 2006-05-02 Molecular Imprints, Inc. Methods of manufacturing a lithography template
US20030235787A1 (en) * 2002-06-24 2003-12-25 Watts Michael P.C. Low viscosity high resolution patterning material
US6926929B2 (en) 2002-07-09 2005-08-09 Molecular Imprints, Inc. System and method for dispensing liquids
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US7077992B2 (en) 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US6932934B2 (en) 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
US6908861B2 (en) * 2002-07-11 2005-06-21 Molecular Imprints, Inc. Method for imprint lithography using an electric field
US7019819B2 (en) 2002-11-13 2006-03-28 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
US7070405B2 (en) * 2002-08-01 2006-07-04 Molecular Imprints, Inc. Alignment systems for imprint lithography
US7027156B2 (en) 2002-08-01 2006-04-11 Molecular Imprints, Inc. Scatterometry alignment for imprint lithography
US6916584B2 (en) 2002-08-01 2005-07-12 Molecular Imprints, Inc. Alignment methods for imprint lithography
US7071088B2 (en) * 2002-08-23 2006-07-04 Molecular Imprints, Inc. Method for fabricating bulbous-shaped vias
US8349241B2 (en) 2002-10-04 2013-01-08 Molecular Imprints, Inc. Method to arrange features on a substrate to replicate features having minimal dimensional variability
US6980282B2 (en) 2002-12-11 2005-12-27 Molecular Imprints, Inc. Method for modulating shapes of substrates
US6929762B2 (en) * 2002-11-13 2005-08-16 Molecular Imprints, Inc. Method of reducing pattern distortions during imprint lithography processes
US6871558B2 (en) * 2002-12-12 2005-03-29 Molecular Imprints, Inc. Method for determining characteristics of substrate employing fluid geometries
US7452574B2 (en) * 2003-02-27 2008-11-18 Molecular Imprints, Inc. Method to reduce adhesion between a polymerizable layer and a substrate employing a fluorine-containing layer
US7179396B2 (en) * 2003-03-25 2007-02-20 Molecular Imprints, Inc. Positive tone bi-layer imprint lithography method
US7122079B2 (en) 2004-02-27 2006-10-17 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
US7396475B2 (en) * 2003-04-25 2008-07-08 Molecular Imprints, Inc. Method of forming stepped structures employing imprint lithography
US7223518B2 (en) * 2003-06-06 2007-05-29 Georgia Tech Research Corporation Compositions and methods of use thereof
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US8211214B2 (en) * 2003-10-02 2012-07-03 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US20050084804A1 (en) * 2003-10-16 2005-04-21 Molecular Imprints, Inc. Low surface energy templates
US8053159B2 (en) 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
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US20050275311A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Compliant device for nano-scale manufacturing
US20060145398A1 (en) * 2004-12-30 2006-07-06 Board Of Regents, The University Of Texas System Release layer comprising diamond-like carbon (DLC) or doped DLC with tunable composition for imprint lithography templates and contact masks
US7906058B2 (en) * 2005-12-01 2011-03-15 Molecular Imprints, Inc. Bifurcated contact printing technique
US7803308B2 (en) * 2005-12-01 2010-09-28 Molecular Imprints, Inc. Technique for separating a mold from solidified imprinting material
JP4987012B2 (ja) * 2005-12-08 2012-07-25 モレキュラー・インプリンツ・インコーポレーテッド 基板の両面パターニングする方法及びシステム
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US8850980B2 (en) 2006-04-03 2014-10-07 Canon Nanotechnologies, Inc. Tessellated patterns in imprint lithography
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Also Published As

Publication number Publication date
DE68925244T2 (de) 1996-08-14
EP0352739A3 (de) 1991-09-11
JPH02289858A (ja) 1990-11-29
EP0352739A2 (de) 1990-01-31
EP0352739B1 (de) 1995-12-27
US4921778A (en) 1990-05-01

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