DE68920161D1 - Elektrisch veränderliches nichtflüchtiges Flip-Flop mit Null-Leistung. - Google Patents
Elektrisch veränderliches nichtflüchtiges Flip-Flop mit Null-Leistung.Info
- Publication number
- DE68920161D1 DE68920161D1 DE68920161T DE68920161T DE68920161D1 DE 68920161 D1 DE68920161 D1 DE 68920161D1 DE 68920161 T DE68920161 T DE 68920161T DE 68920161 T DE68920161 T DE 68920161T DE 68920161 D1 DE68920161 D1 DE 68920161D1
- Authority
- DE
- Germany
- Prior art keywords
- flop
- zero power
- electrically variable
- variable non
- volatile flip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356008—Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/149,568 US4858185A (en) | 1988-01-28 | 1988-01-28 | Zero power, electrically alterable, nonvolatile latch |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68920161D1 true DE68920161D1 (de) | 1995-02-09 |
DE68920161T2 DE68920161T2 (de) | 1995-07-27 |
Family
ID=22530876
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68920161T Expired - Lifetime DE68920161T2 (de) | 1988-01-28 | 1989-01-21 | Elektrisch veränderliches nichtflüchtiges Flip-Flop mit Null-Leistung. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4858185A (de) |
EP (1) | EP0326883B1 (de) |
JP (1) | JP2831015B2 (de) |
CA (1) | CA1303689C (de) |
DE (1) | DE68920161T2 (de) |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2832998B2 (ja) * | 1989-04-27 | 1998-12-09 | 日本電気株式会社 | 不揮発性mos半導体記憶装置 |
US5272368A (en) * | 1991-05-10 | 1993-12-21 | Altera Corporation | Complementary low power non-volatile reconfigurable EEcell |
US5644533A (en) * | 1992-11-02 | 1997-07-01 | Nvx Corporation | Flash memory system, and methods of constructing and utilizing same |
US5548228A (en) * | 1994-09-28 | 1996-08-20 | Altera Corporation | Reconfigurable programmable logic device having static and non-volatile memory |
US5625211A (en) * | 1995-01-12 | 1997-04-29 | Actel Corporation | Two-transistor electrically-alterable switch employing hot electron injection and fowler nordheim tunneling |
JP2961126B2 (ja) * | 1995-02-13 | 1999-10-12 | セントラル硝子株式会社 | 三次元光メモリーガラス素子からなる記録媒体及びその記録方法 |
US5596524A (en) * | 1995-04-21 | 1997-01-21 | Advanced Micro Devices, Inc. | CMOS memory cell with gate oxide of both NMOS and PMOS transistors as tunneling window for program and erase |
US5754471A (en) * | 1995-06-06 | 1998-05-19 | Advanced Micro Devices, Inc. | Low power CMOS array for a PLD with program and erase using controlled avalanche injection |
US5801985A (en) | 1995-07-28 | 1998-09-01 | Micron Technology, Inc. | Memory system having programmable control parameters |
US5627784A (en) * | 1995-07-28 | 1997-05-06 | Micron Quantum Devices, Inc. | Memory system having non-volatile data storage structure for memory control parameters and method |
US5682345A (en) * | 1995-07-28 | 1997-10-28 | Micron Quantum Devices, Inc. | Non-volatile data storage unit method of controlling same |
US5657444A (en) * | 1995-08-03 | 1997-08-12 | National Semiconductor Corporation | Microprocessor with secure programmable read only memory circuit |
US5587945A (en) * | 1995-11-06 | 1996-12-24 | Advanced Micro Devices, Inc. | CMOS EEPROM cell with tunneling window in the read path |
US5793775A (en) * | 1996-01-26 | 1998-08-11 | Micron Quantum Devices, Inc. | Low voltage test mode operation enable scheme with hardware safeguard |
US5694055A (en) * | 1996-02-27 | 1997-12-02 | Philips Electronic North America Corp. | Zero static power programmable logic cell |
US5646901A (en) * | 1996-03-26 | 1997-07-08 | Advanced Micro Devices, Inc. | CMOS memory cell with tunneling during program and erase through the NMOS and PMOS transistors and a pass gate separating the NMOS and PMOS transistors |
US6122191A (en) * | 1996-05-01 | 2000-09-19 | Cypress Semiconductor Corporation | Semiconductor non-volatile device including embedded non-volatile elements |
SE509159C2 (sv) * | 1997-01-27 | 1998-12-07 | Ericsson Telefon Ab L M | Hållkrets jämte förfarande för styrning av en hållkrets |
US5781471A (en) * | 1997-08-15 | 1998-07-14 | Programmable Microelectronics Corporation | PMOS non-volatile latch for storage of redundancy addresses |
US6141247A (en) * | 1997-10-24 | 2000-10-31 | Micron Technology, Inc. | Non-volatile data storage unit and method of controlling same |
US5943268A (en) * | 1997-12-31 | 1999-08-24 | Programmable Microelectronics Corporation | Non-volatile latch having PMOS floating gate memory cells |
US5986962A (en) * | 1998-07-23 | 1999-11-16 | International Business Machines Corporation | Internal shadow latch |
JP2001358313A (ja) * | 2000-06-14 | 2001-12-26 | Hitachi Ltd | 半導体装置 |
ITRM20010556A1 (it) * | 2001-09-12 | 2003-03-12 | Micron Technology Inc | Decodificatore per decodificare i comandi di commutazione a modo di test di circuiti integrati. |
US7145370B2 (en) | 2003-09-05 | 2006-12-05 | Impinj, Inc. | High-voltage switches in single-well CMOS processes |
US7388420B2 (en) | 2004-03-30 | 2008-06-17 | Impinj, Inc. | Rewriteable electronic fuses |
US7242614B2 (en) | 2004-03-30 | 2007-07-10 | Impinj, Inc. | Rewriteable electronic fuses |
US7177182B2 (en) | 2004-03-30 | 2007-02-13 | Impinj, Inc. | Rewriteable electronic fuses |
US7283390B2 (en) | 2004-04-21 | 2007-10-16 | Impinj, Inc. | Hybrid non-volatile memory |
US8111558B2 (en) | 2004-05-05 | 2012-02-07 | Synopsys, Inc. | pFET nonvolatile memory |
US7257033B2 (en) | 2005-03-17 | 2007-08-14 | Impinj, Inc. | Inverter non-volatile memory cell and array system |
US7679957B2 (en) | 2005-03-31 | 2010-03-16 | Virage Logic Corporation | Redundant non-volatile memory cell |
US7859925B1 (en) | 2006-03-31 | 2010-12-28 | Cypress Semiconductor Corporation | Anti-fuse latch self-test circuit and method |
US8122307B1 (en) | 2006-08-15 | 2012-02-21 | Synopsys, Inc. | One time programmable memory test structures and methods |
US7859906B1 (en) | 2007-03-30 | 2010-12-28 | Cypress Semiconductor Corporation | Circuit and method to increase read margin in non-volatile memories using a differential sensing circuit |
US7719896B1 (en) | 2007-04-24 | 2010-05-18 | Virage Logic Corporation | Configurable single bit/dual bits memory |
US7968926B2 (en) * | 2007-12-19 | 2011-06-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Logic non-volatile memory cell with improved data retention ability |
US8059458B2 (en) * | 2007-12-31 | 2011-11-15 | Cypress Semiconductor Corporation | 3T high density nvDRAM cell |
US8036032B2 (en) | 2007-12-31 | 2011-10-11 | Cypress Semiconductor Corporation | 5T high density NVDRAM cell |
US8064255B2 (en) * | 2007-12-31 | 2011-11-22 | Cypress Semiconductor Corporation | Architecture of a nvDRAM array and its sense regime |
US7894261B1 (en) | 2008-05-22 | 2011-02-22 | Synopsys, Inc. | PFET nonvolatile memory |
TWI469325B (zh) | 2012-07-31 | 2015-01-11 | Ind Tech Res Inst | 邏輯閘 |
TWI493548B (zh) | 2013-01-31 | 2015-07-21 | Ind Tech Res Inst | 可組態邏輯區塊及其操作方法 |
DE202015009335U1 (de) | 2015-10-26 | 2017-03-03 | Brose Fahrzeugteile Gmbh & Co. Kommanditgesellschaft, Bamberg | Vorrichtung zur Ermittlung der Stellposition eines verstellbaren Kraftfahrzeugteils |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4095281A (en) * | 1976-03-04 | 1978-06-13 | Rca Corporation | Random access-erasable read only memory cell |
US4132904A (en) * | 1977-07-28 | 1979-01-02 | Hughes Aircraft Company | Volatile/non-volatile logic latch circuit |
US4486769A (en) * | 1979-01-24 | 1984-12-04 | Xicor, Inc. | Dense nonvolatile electrically-alterable memory device with substrate coupling electrode |
US4409723A (en) * | 1980-04-07 | 1983-10-18 | Eliyahou Harari | Method of forming non-volatile EPROM and EEPROM with increased efficiency |
US4328565A (en) * | 1980-04-07 | 1982-05-04 | Eliyahou Harari | Non-volatile eprom with increased efficiency |
FR2517143A1 (fr) * | 1981-11-20 | 1983-05-27 | Efcis | Bascule bistable a stockage non volatil et a repositionnement dynamique |
FR2517142A1 (fr) * | 1981-11-20 | 1983-05-27 | Efcis | Bascule bistable a stockage non volatil et a repositionnement statique |
US4408303A (en) * | 1981-12-28 | 1983-10-04 | Mostek Corporation | Directly-coupled and capacitively coupled nonvolatile static RAM cell |
US4571704A (en) * | 1984-02-17 | 1986-02-18 | Hughes Aircraft Company | Nonvolatile latch |
US4628487A (en) * | 1984-08-14 | 1986-12-09 | Texas Instruments Incorporated | Dual slope, feedback controlled, EEPROM programming |
US4599706A (en) * | 1985-05-14 | 1986-07-08 | Xicor, Inc. | Nonvolatile electrically alterable memory |
US4695979A (en) * | 1985-09-09 | 1987-09-22 | Texas Instruments Incorporated | Modified four transistor EEPROM cell |
JPS6414798A (en) * | 1987-07-09 | 1989-01-18 | Fujitsu Ltd | Non-volatile memory device |
-
1988
- 1988-01-28 US US07/149,568 patent/US4858185A/en not_active Expired - Lifetime
-
1989
- 1989-01-21 DE DE68920161T patent/DE68920161T2/de not_active Expired - Lifetime
- 1989-01-21 EP EP89101040A patent/EP0326883B1/de not_active Expired - Lifetime
- 1989-01-27 CA CA000589321A patent/CA1303689C/en not_active Expired - Fee Related
- 1989-01-30 JP JP1017849A patent/JP2831015B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0326883A2 (de) | 1989-08-09 |
DE68920161T2 (de) | 1995-07-27 |
US4858185A (en) | 1989-08-15 |
JPH027290A (ja) | 1990-01-11 |
CA1303689C (en) | 1992-06-16 |
EP0326883A3 (de) | 1991-07-10 |
JP2831015B2 (ja) | 1998-12-02 |
EP0326883B1 (de) | 1994-12-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |