DE68920130T2 - Flüssigkristallanzeige mit aktiver Matrix. - Google Patents

Flüssigkristallanzeige mit aktiver Matrix.

Info

Publication number
DE68920130T2
DE68920130T2 DE68920130T DE68920130T DE68920130T2 DE 68920130 T2 DE68920130 T2 DE 68920130T2 DE 68920130 T DE68920130 T DE 68920130T DE 68920130 T DE68920130 T DE 68920130T DE 68920130 T2 DE68920130 T2 DE 68920130T2
Authority
DE
Germany
Prior art keywords
liquid crystal
crystal display
active matrix
matrix
active
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68920130T
Other languages
English (en)
Other versions
DE68920130D1 (de
Inventor
Hiroaki Kato
Toshihiko Hirobe
Yoshitaka Hibino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE68920130D1 publication Critical patent/DE68920130D1/de
Application granted granted Critical
Publication of DE68920130T2 publication Critical patent/DE68920130T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
DE68920130T 1988-08-10 1989-08-10 Flüssigkristallanzeige mit aktiver Matrix. Expired - Fee Related DE68920130T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20078288A JPH0816756B2 (ja) 1988-08-10 1988-08-10 透過型アクティブマトリクス液晶表示装置

Publications (2)

Publication Number Publication Date
DE68920130D1 DE68920130D1 (de) 1995-02-02
DE68920130T2 true DE68920130T2 (de) 1995-06-22

Family

ID=16430101

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68920130T Expired - Fee Related DE68920130T2 (de) 1988-08-10 1989-08-10 Flüssigkristallanzeige mit aktiver Matrix.

Country Status (4)

Country Link
US (1) US5054887A (de)
EP (1) EP0376437B1 (de)
JP (1) JPH0816756B2 (de)
DE (1) DE68920130T2 (de)

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JP2620240B2 (ja) 1987-06-10 1997-06-11 株式会社日立製作所 液晶表示装置
US5231039A (en) * 1988-02-25 1993-07-27 Sharp Kabushiki Kaisha Method of fabricating a liquid crystal display device
US5225364A (en) * 1989-06-26 1993-07-06 Oki Electric Industry Co., Ltd. Method of fabricating a thin-film transistor matrix for an active matrix display panel
JP3009438B2 (ja) * 1989-08-14 2000-02-14 株式会社日立製作所 液晶表示装置
DE69117785T2 (de) * 1990-03-27 1997-02-06 Canon Kk Dünnschicht-Halbleiterbauelement
FR2662290B1 (fr) * 1990-05-15 1992-07-24 France Telecom Procede de realisation d'un ecran d'affichage a matrice active et a condensateurs de stockage et ecran obtenu par ce procede.
JP3226223B2 (ja) * 1990-07-12 2001-11-05 株式会社東芝 薄膜トランジスタアレイ装置および液晶表示装置
JPH0475034A (ja) * 1990-07-17 1992-03-10 Sharp Corp アクティブマトリクス表示装置及びその製造方法
US5153142A (en) * 1990-09-04 1992-10-06 Industrial Technology Research Institute Method for fabricating an indium tin oxide electrode for a thin film transistor
US5402254B1 (en) * 1990-10-17 1998-09-22 Hitachi Ltd Liquid crystal display device with tfts in which pixel electrodes are formed in the same plane as the gate electrodes with anodized oxide films before the deposition of silicon
JP3024661B2 (ja) * 1990-11-09 2000-03-21 セイコーエプソン株式会社 アクティブマトリクス基板及びその製造方法
US5206749A (en) 1990-12-31 1993-04-27 Kopin Corporation Liquid crystal display having essentially single crystal transistors pixels and driving circuits
US5528397A (en) 1991-12-03 1996-06-18 Kopin Corporation Single crystal silicon transistors for display panels
US5362671A (en) * 1990-12-31 1994-11-08 Kopin Corporation Method of fabricating single crystal silicon arrayed devices for display panels
US5666175A (en) * 1990-12-31 1997-09-09 Kopin Corporation Optical systems for displays
EP0499979A3 (en) 1991-02-16 1993-06-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US6713783B1 (en) 1991-03-15 2004-03-30 Semiconductor Energy Laboratory Co., Ltd. Compensating electro-optical device including thin film transistors
JP2873632B2 (ja) 1991-03-15 1999-03-24 株式会社半導体エネルギー研究所 半導体装置
JPH0572553A (ja) * 1991-09-11 1993-03-26 Hitachi Ltd 液晶表示装置およびその製造方法
US6979840B1 (en) * 1991-09-25 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having anodized metal film between the gate wiring and drain wiring
JP2907629B2 (ja) * 1992-04-10 1999-06-21 松下電器産業株式会社 液晶表示パネル
JP3245959B2 (ja) * 1992-06-05 2002-01-15 松下電器産業株式会社 液晶画像表示装置の製造方法
JPH05341315A (ja) 1992-06-08 1993-12-24 Hitachi Ltd 薄膜トランジスタ基板、液晶表示パネルおよび液晶表示装置
US5707746A (en) * 1992-09-25 1998-01-13 Sharp Kabushiki Kaisha Thin film transistor device with advanced characteristics by improved matching between a glass substrate and a silicon nitride layer
JP2924506B2 (ja) * 1992-10-27 1999-07-26 日本電気株式会社 アクティブマトリックス型液晶表示装置の画素構造
WO1994013018A1 (en) * 1992-12-01 1994-06-09 Litton Systems Canada Limited Thin film transistor having a triple layer dielectric gate insulator, method of fabricating such a thin film transistor and an active matrix display having a plurality of such thin film transistors
JP3098345B2 (ja) * 1992-12-28 2000-10-16 富士通株式会社 薄膜トランジスタマトリクス装置及びその製造方法
DE4339721C1 (de) * 1993-11-22 1995-02-02 Lueder Ernst Verfahren zur Herstellung einer Matrix aus Dünnschichttransistoren
US5483366A (en) * 1994-07-20 1996-01-09 David Sarnoff Research Center Inc LCD with hige capacitance pixel having an ITO active region/poly SI pixel region electrical connection and having poly SI selection line extensions along pixel edges
JPH08172202A (ja) * 1994-12-20 1996-07-02 Sharp Corp 薄膜トランジスタおよびその製造方法
JP2900229B2 (ja) * 1994-12-27 1999-06-02 株式会社半導体エネルギー研究所 半導体装置およびその作製方法および電気光学装置
KR0145900B1 (ko) * 1995-02-11 1998-09-15 김광호 박막 트랜지스터 액정디스플레이 소자 및 그 제조방법
US5834327A (en) 1995-03-18 1998-11-10 Semiconductor Energy Laboratory Co., Ltd. Method for producing display device
KR100303134B1 (ko) * 1995-05-09 2002-11-23 엘지.필립스 엘시디 주식회사 액정표시소자및그제조방법.
FR2737314B1 (fr) * 1995-07-28 1997-08-29 Thomson Lcd Procede de fabrication d'une matrice active pour ecran plat, ecran a cristaux liquides comportant une matrice active obtenue selon ledit procede et procede d'adressage d'un tel ecran
KR100205388B1 (ko) * 1995-09-12 1999-07-01 구자홍 액정표시장치 및 그 제조방법
JPH09236826A (ja) * 1995-09-28 1997-09-09 Sharp Corp 液晶表示素子およびその製造方法
DE69635239T2 (de) * 1995-11-21 2006-07-06 Samsung Electronics Co., Ltd., Suwon Verfahren zur Herstellung einer Flüssigkristall-Anzeige
KR100190041B1 (ko) * 1995-12-28 1999-06-01 윤종용 액정표시장치의 제조방법
JP3205501B2 (ja) * 1996-03-12 2001-09-04 シャープ株式会社 アクティブマトリクス表示装置およびその修正方法
US6383899B1 (en) 1996-04-05 2002-05-07 Sharp Laboratories Of America, Inc. Method of forming polycrystalline semiconductor film from amorphous deposit by modulating crystallization with a combination of pre-annealing and ion implantation
JPH1010583A (ja) * 1996-04-22 1998-01-16 Sharp Corp アクティブマトリクス基板の製造方法、およびそのアクティブマトリクス基板
KR100209620B1 (ko) * 1996-08-31 1999-07-15 구자홍 액정 표시 장치 및 그 제조방법
KR100241287B1 (ko) * 1996-09-10 2000-02-01 구본준 액정표시소자 제조방법
JPH10229197A (ja) * 1997-02-17 1998-08-25 Sanyo Electric Co Ltd 薄膜トランジスタ、薄膜トランジスタの製造方法
JP3376379B2 (ja) * 1997-02-20 2003-02-10 富士通ディスプレイテクノロジーズ株式会社 液晶表示パネル、液晶表示装置及びその製造方法
JP3592535B2 (ja) 1998-07-16 2004-11-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6124164A (en) 1998-09-17 2000-09-26 Micron Technology, Inc. Method of making integrated capacitor incorporating high K dielectric
JP2000275663A (ja) * 1999-03-26 2000-10-06 Hitachi Ltd 液晶表示装置とその製造方法
JP4744757B2 (ja) * 1999-07-21 2011-08-10 イー インク コーポレイション アクティブマトリクス駆動電子ディスプレイの性能を高めるための蓄電キャパシタの使用
KR100647775B1 (ko) * 2004-12-01 2006-11-23 엘지.필립스 엘시디 주식회사 박막 트랜지스터 기판 및 제조 방법
TWI257646B (en) * 2005-09-05 2006-07-01 Innolux Display Corp Thin film transistor array substrate and method of manufacturing the same
KR100962794B1 (ko) * 2005-12-26 2010-06-10 샤프 가부시키가이샤 액티브 매트릭스 기판, 액정 패널, 액정 표시 장치 및 ｔｖ 수상기
TWI304655B (en) * 2006-04-07 2008-12-21 Innolux Display Corp Thin film transistor and method of manufacturing the same
CN100529866C (zh) * 2006-04-19 2009-08-19 群康科技(深圳)有限公司 液晶显示器制造方法
TWI339303B (en) * 2006-12-15 2011-03-21 Chimei Innolux Corp Liquid crystal panel
JP5182993B2 (ja) * 2008-03-31 2013-04-17 株式会社半導体エネルギー研究所 表示装置及びその作製方法
WO2011070901A1 (en) 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5735255B2 (ja) 2010-10-28 2015-06-17 株式会社ハイレックスコーポレーション 係留装置及びそれを用いたステアリング係留機構
TWI422940B (zh) * 2010-12-16 2014-01-11 Innolux Corp 陣列基板的形成方法
CN110797353A (zh) * 2019-11-12 2020-02-14 京东方科技集团股份有限公司 阵列基板、显示面板和显示装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3671820A (en) * 1970-04-27 1972-06-20 Rudolph R Haering High voltage thin-film transistor
JPS5922029A (ja) * 1982-07-28 1984-02-04 Matsushita Electric Ind Co Ltd マトリクス表示パネルの製造方法
JPS6045219A (ja) * 1983-08-23 1985-03-11 Toshiba Corp アクテイブマトリクス型表示装置
GB2169746B (en) * 1984-11-13 1988-09-14 Sharp Kk Thin film transistor
US4571816A (en) * 1984-12-11 1986-02-25 Rca Corporation Method of making a capacitor with standard self-aligned gate process
JPS62285464A (ja) * 1986-06-03 1987-12-11 Matsushita Electric Ind Co Ltd 薄膜トランジスタアレイ基板及びその製造方法
EP0288011A3 (de) * 1987-04-20 1991-02-20 Hitachi, Ltd. Flüssigkristallanzeigeeinrichtung und Steuerungsverfahren dafür
JPH01291467A (ja) * 1988-05-19 1989-11-24 Toshiba Corp 薄膜トランジスタ
JP3351026B2 (ja) * 1993-06-04 2002-11-25 松下電器産業株式会社 電気湯沸かし器

Also Published As

Publication number Publication date
DE68920130D1 (de) 1995-02-02
US5054887A (en) 1991-10-08
JPH0248639A (ja) 1990-02-19
EP0376437A3 (en) 1990-10-31
EP0376437B1 (de) 1994-12-21
JPH0816756B2 (ja) 1996-02-21
EP0376437A2 (de) 1990-07-04

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Legal Events

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8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN

8339 Ceased/non-payment of the annual fee