DE68918367D1 - Halbleiterspeicheranordnung. - Google Patents
Halbleiterspeicheranordnung.Info
- Publication number
- DE68918367D1 DE68918367D1 DE68918367T DE68918367T DE68918367D1 DE 68918367 D1 DE68918367 D1 DE 68918367D1 DE 68918367 T DE68918367 T DE 68918367T DE 68918367 T DE68918367 T DE 68918367T DE 68918367 D1 DE68918367 D1 DE 68918367D1
- Authority
- DE
- Germany
- Prior art keywords
- memory device
- semiconductor memory
- semiconductor
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/561—Multilevel memory cell aspects
- G11C2211/5614—Multilevel memory cell comprising negative resistance, quantum tunneling or resonance tunneling elements
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63179156A JP2588590B2 (ja) | 1988-07-20 | 1988-07-20 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68918367D1 true DE68918367D1 (de) | 1994-10-27 |
DE68918367T2 DE68918367T2 (de) | 1995-01-19 |
Family
ID=16060927
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68918367T Expired - Fee Related DE68918367T2 (de) | 1988-07-20 | 1989-07-20 | Halbleiterspeicheranordnung. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5023836A (de) |
EP (1) | EP0352193B1 (de) |
JP (1) | JP2588590B2 (de) |
DE (1) | DE68918367T2 (de) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100304813B1 (ko) * | 1992-12-28 | 2001-11-22 | 사와무라 시코 | 부성저항회로와이를사용한슈미트트리거회로 |
JP2986057B2 (ja) * | 1995-02-22 | 1999-12-06 | インターナショナル・ビジネス・マシーンズ・コーポレイション | メモリセル |
KR19980041071A (ko) * | 1996-11-30 | 1998-08-17 | 구자홍 | 헤테로정션 바이폴라 트랜지스터 |
US6594193B2 (en) | 2000-06-22 | 2003-07-15 | Progressent Technologies, Inc. | Charge pump for negative differential resistance transistor |
US6724655B2 (en) * | 2000-06-22 | 2004-04-20 | Progressant Technologies, Inc. | Memory cell using negative differential resistance field effect transistors |
US6559470B2 (en) | 2000-06-22 | 2003-05-06 | Progressed Technologies, Inc. | Negative differential resistance field effect transistor (NDR-FET) and circuits using the same |
US6933548B1 (en) | 2001-12-21 | 2005-08-23 | Synopsys, Inc. | Negative differential resistance load element |
US7453083B2 (en) * | 2001-12-21 | 2008-11-18 | Synopsys, Inc. | Negative differential resistance field effect transistor for implementing a pull up element in a memory cell |
US6567292B1 (en) | 2002-06-28 | 2003-05-20 | Progressant Technologies, Inc. | Negative differential resistance (NDR) element and memory with reduced soft error rate |
US7095659B2 (en) * | 2002-06-28 | 2006-08-22 | Progressant Technologies, Inc. | Variable voltage supply bias and methods for negative differential resistance (NDR) based memory device |
US7098472B2 (en) * | 2002-06-28 | 2006-08-29 | Progressant Technologies, Inc. | Negative differential resistance (NDR) elements and memory device using the same |
US6795337B2 (en) * | 2002-06-28 | 2004-09-21 | Progressant Technologies, Inc. | Negative differential resistance (NDR) elements and memory device using the same |
US6864104B2 (en) * | 2002-06-28 | 2005-03-08 | Progressant Technologies, Inc. | Silicon on insulator (SOI) negative differential resistance (NDR) based memory device with reduced body effects |
US6853035B1 (en) * | 2002-06-28 | 2005-02-08 | Synopsys, Inc. | Negative differential resistance (NDR) memory device with reduced soft error rate |
US6847562B2 (en) * | 2002-06-28 | 2005-01-25 | Progressant Technologies, Inc. | Enhanced read and write methods for negative differential resistance (NDR) based memory device |
US6912151B2 (en) * | 2002-06-28 | 2005-06-28 | Synopsys, Inc. | Negative differential resistance (NDR) based memory device with reduced body effects |
US6979580B2 (en) * | 2002-12-09 | 2005-12-27 | Progressant Technologies, Inc. | Process for controlling performance characteristics of a negative differential resistance (NDR) device |
US7012833B2 (en) * | 2002-12-09 | 2006-03-14 | Progressant Technologies, Inc. | Integrated circuit having negative differential resistance (NDR) devices with varied peak-to-valley ratios (PVRs) |
US6849483B2 (en) * | 2002-12-09 | 2005-02-01 | Progressant Technologies, Inc. | Charge trapping device and method of forming the same |
US6812084B2 (en) * | 2002-12-09 | 2004-11-02 | Progressant Technologies, Inc. | Adaptive negative differential resistance device |
US6806117B2 (en) * | 2002-12-09 | 2004-10-19 | Progressant Technologies, Inc. | Methods of testing/stressing a charge trapping device |
US6980467B2 (en) * | 2002-12-09 | 2005-12-27 | Progressant Technologies, Inc. | Method of forming a negative differential resistance device |
US7005711B2 (en) * | 2002-12-20 | 2006-02-28 | Progressant Technologies, Inc. | N-channel pull-up element and logic circuit |
US8525553B1 (en) | 2012-04-30 | 2013-09-03 | Hewlett-Packard Development Company, L.P. | Negative differential resistance comparator circuits |
WO2014182672A1 (en) * | 2013-05-07 | 2014-11-13 | Wilber Scott A | Acquisition and assessment of classically non-inferable information |
US9547476B2 (en) | 2014-10-15 | 2017-01-17 | The United States Of America, As Represented By The Secretary Of The Army | Semiconductor-junction-derived random number generation with triggering mechanism |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3222542A (en) * | 1962-03-01 | 1965-12-07 | Rca Corp | Threshold circuit employing negative resistance diode and device having particular volt-ampere characteristic |
JPS6284621A (ja) * | 1985-10-09 | 1987-04-18 | Fujitsu Ltd | 3値論理回路 |
JPS6323357A (ja) * | 1986-06-14 | 1988-01-30 | Agency Of Ind Science & Technol | 半導体記憶装置 |
JPS62181468A (ja) * | 1985-10-12 | 1987-08-08 | Fujitsu Ltd | 共鳴トンネリング・トランジスタで構成されたフリツプ・フロツプ |
DE3673138D1 (de) * | 1985-10-12 | 1990-09-06 | Fujitsu Ltd | Logische schaltung. |
JPS63269394A (ja) * | 1987-04-28 | 1988-11-07 | Fujitsu Ltd | 半導体記憶装置 |
-
1988
- 1988-07-20 JP JP63179156A patent/JP2588590B2/ja not_active Expired - Fee Related
-
1989
- 1989-07-18 US US07/381,768 patent/US5023836A/en not_active Expired - Fee Related
- 1989-07-20 DE DE68918367T patent/DE68918367T2/de not_active Expired - Fee Related
- 1989-07-20 EP EP89402068A patent/EP0352193B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2588590B2 (ja) | 1997-03-05 |
EP0352193A2 (de) | 1990-01-24 |
EP0352193A3 (en) | 1990-08-29 |
DE68918367T2 (de) | 1995-01-19 |
JPH0230178A (ja) | 1990-01-31 |
US5023836A (en) | 1991-06-11 |
EP0352193B1 (de) | 1994-09-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |