DE68912482T2 - Dünnfilm-Transistoren, ihre Verfahren zur Herstellung und Anzeigeeinrichtung, die mit solchen Transistoren hergestellt sind. - Google Patents
Dünnfilm-Transistoren, ihre Verfahren zur Herstellung und Anzeigeeinrichtung, die mit solchen Transistoren hergestellt sind.Info
- Publication number
- DE68912482T2 DE68912482T2 DE68912482T DE68912482T DE68912482T2 DE 68912482 T2 DE68912482 T2 DE 68912482T2 DE 68912482 T DE68912482 T DE 68912482T DE 68912482 T DE68912482 T DE 68912482T DE 68912482 T2 DE68912482 T2 DE 68912482T2
- Authority
- DE
- Germany
- Prior art keywords
- transistors
- display device
- thin film
- manufacturing methods
- device made
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
- G02F2202/103—Materials and properties semiconductor a-Si
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
- G02F2202/104—Materials and properties semiconductor poly-Si
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/018—Compensation doping
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/105—Masks, metal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/919—Compensation doping
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8822960A GB2223353A (en) | 1988-09-30 | 1988-09-30 | Thin-film transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68912482D1 DE68912482D1 (de) | 1994-03-03 |
DE68912482T2 true DE68912482T2 (de) | 1994-07-28 |
Family
ID=10644511
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68912482T Expired - Fee Related DE68912482T2 (de) | 1988-09-30 | 1989-09-25 | Dünnfilm-Transistoren, ihre Verfahren zur Herstellung und Anzeigeeinrichtung, die mit solchen Transistoren hergestellt sind. |
Country Status (6)
Country | Link |
---|---|
US (1) | US5047360A (de) |
EP (1) | EP0361609B1 (de) |
JP (1) | JPH0744278B2 (de) |
KR (1) | KR900005613A (de) |
DE (1) | DE68912482T2 (de) |
GB (1) | GB2223353A (de) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5629218A (en) * | 1989-12-19 | 1997-05-13 | Texas Instruments Incorporated | Method for forming a field-effect transistor including a mask body and source/drain contacts |
US5198379A (en) * | 1990-04-27 | 1993-03-30 | Sharp Kabushiki Kaisha | Method of making a MOS thin film transistor with self-aligned asymmetrical structure |
JPH04133313A (ja) * | 1990-09-25 | 1992-05-07 | Semiconductor Energy Lab Co Ltd | 半導体作製方法 |
TW237562B (de) | 1990-11-09 | 1995-01-01 | Semiconductor Energy Res Co Ltd | |
US5166084A (en) * | 1991-09-03 | 1992-11-24 | Motorola, Inc. | Process for fabricating a silicon on insulator field effect transistor |
DE69215608T2 (de) * | 1991-09-05 | 1997-03-27 | Casio Computer Co Ltd | Dünnschichttransistor und dessen Herstellungsmethode |
US5334859A (en) * | 1991-09-05 | 1994-08-02 | Casio Computer Co., Ltd. | Thin-film transistor having source and drain electrodes insulated by an anodically oxidized film |
US6979840B1 (en) * | 1991-09-25 | 2005-12-27 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistors having anodized metal film between the gate wiring and drain wiring |
DE69223118T2 (de) * | 1991-11-26 | 1998-03-05 | Casio Computer Co Ltd | Dünnschicht-Transistor-Panel und dessen Herstellungsmethode |
US5559344A (en) * | 1992-01-31 | 1996-09-24 | Hitachi, Ltd. | Thin-film semiconductor element, thin-film semiconductor device and methods of fabricating the same |
EP0566838A3 (en) * | 1992-02-21 | 1996-07-31 | Matsushita Electric Ind Co Ltd | Manufacturing method of thin film transistor |
US5248626A (en) * | 1992-08-28 | 1993-09-28 | The United States Of America As Represented By The Secretary Of The Navy | Method for fabricating self-aligned gate diffused junction field effect transistor |
US5281546A (en) * | 1992-09-02 | 1994-01-25 | General Electric Company | Method of fabricating a thin film transistor using hydrogen plasma treatment of the intrinsic silicon/doped layer interface |
KR950005484B1 (ko) * | 1992-09-29 | 1995-05-24 | 현대전자산업주식회사 | 플라즈마 산화 처리를 이용한 폴리실리콘 박막트랜지스터 제조방법 |
US5858821A (en) * | 1993-05-12 | 1999-01-12 | Micron Technology, Inc. | Method of making thin film transistors |
DE4435461C2 (de) * | 1993-10-06 | 2001-09-20 | Micron Technology Inc N D Ges | Dünnfilmtransistor und dessen Herstellverfahren |
KR950012702A (ko) * | 1993-10-21 | 1995-05-16 | 이헌조 | 박막트랜지스터 제조방법 |
JP3897826B2 (ja) * | 1994-08-19 | 2007-03-28 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型の表示装置 |
US5550066A (en) * | 1994-12-14 | 1996-08-27 | Eastman Kodak Company | Method of fabricating a TFT-EL pixel |
US5627103A (en) * | 1995-03-02 | 1997-05-06 | Sony Corporation | Method of thin film transistor formation with split polysilicon deposition |
KR100362191B1 (ko) * | 1995-12-07 | 2003-03-06 | 주식회사 하이닉스반도체 | 반도체소자의박막트랜지스터및그제조방법 |
JP3082679B2 (ja) * | 1996-08-29 | 2000-08-28 | 日本電気株式会社 | 薄膜トランジスタおよびその製造方法 |
US6043507A (en) * | 1997-09-24 | 2000-03-28 | Micron Technology, Inc. | Thin film transistors and methods of making |
GB9812739D0 (en) * | 1998-06-12 | 1998-08-12 | Koninkl Philips Electronics Nv | Active matrix electroluminescent display devices |
US6656779B1 (en) * | 1998-10-06 | 2003-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor apparatus having semiconductor circuits made of semiconductor devices, and method of manufacture thereof |
JP4638115B2 (ja) | 2002-07-05 | 2011-02-23 | シャープ株式会社 | 薄膜トランジスタ装置の製造方法 |
US6995053B2 (en) * | 2004-04-23 | 2006-02-07 | Sharp Laboratories Of America, Inc. | Vertical thin film transistor |
TW595028B (en) * | 2003-08-20 | 2004-06-21 | Au Optronics Corp | Display unit of the active matrix organic light emitting diode |
KR100977223B1 (ko) * | 2003-09-25 | 2010-08-23 | 엘지디스플레이 주식회사 | 액정표시장치의 제조방법 |
SG115733A1 (en) * | 2004-03-12 | 2005-10-28 | Semiconductor Energy Lab | Thin film transistor, semiconductor device, and method for manufacturing the same |
KR101251998B1 (ko) * | 2006-02-20 | 2013-04-08 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
WO2008114330A1 (ja) * | 2007-02-19 | 2008-09-25 | Fujitsu Limited | Memsデバイスおよび光スイッチ |
KR100759086B1 (ko) * | 2007-02-23 | 2007-09-19 | 실리콘 디스플레이 (주) | 국부 산화를 이용한 박막 트랜지스터 제조 방법 및 투명박막 트랜지스터 |
CN103824779A (zh) * | 2014-02-18 | 2014-05-28 | 北京京东方显示技术有限公司 | 一种薄膜晶体管及其制作方法、tft阵列基板、显示装置 |
WO2021189445A1 (zh) * | 2020-03-27 | 2021-09-30 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制备方法、阵列基板、显示装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4276095A (en) * | 1977-08-31 | 1981-06-30 | International Business Machines Corporation | Method of making a MOSFET device with reduced sensitivity of threshold voltage to source to substrate voltage variations |
US4459739A (en) * | 1981-05-26 | 1984-07-17 | Northern Telecom Limited | Thin film transistors |
DE3279239D1 (en) * | 1981-07-27 | 1988-12-29 | Toshiba Kk | Thin-film transistor and method of manufacture therefor |
JPS5833872A (ja) * | 1981-08-24 | 1983-02-28 | Toshiba Corp | 薄膜電界効果トランジスタの製造方法 |
GB8406330D0 (en) * | 1984-03-10 | 1984-04-11 | Lucas Ind Plc | Amorphous silicon field effect transistors |
JPH0682839B2 (ja) * | 1984-08-21 | 1994-10-19 | セイコー電子工業株式会社 | 表示用パネルの製造方法 |
JPS61164267A (ja) * | 1985-01-17 | 1986-07-24 | Nec Corp | 薄膜トランジスタの製造方法 |
EP0196915B1 (de) * | 1985-03-29 | 1991-08-14 | Matsushita Electric Industrial Co., Ltd. | Dünnschicht-Transistorenanordnung und Methode zu deren Herstellung |
US4882295A (en) * | 1985-07-26 | 1989-11-21 | Energy Conversion Devices, Inc. | Method of making a double injection field effect transistor |
FR2593631B1 (fr) * | 1986-01-27 | 1989-02-17 | Maurice Francois | Ecran d'affichage a matrice active a resistance de grille et procedes de fabrication de cet ecran |
US4704783A (en) * | 1986-05-05 | 1987-11-10 | General Electric Company | Method for passivating the back channel of amorphous silicon field effect transistors |
JPH0712709B2 (ja) * | 1986-12-26 | 1995-02-15 | 株式会社東芝 | 画像形成装置 |
JPH01302769A (ja) * | 1988-05-30 | 1989-12-06 | Seikosha Co Ltd | 逆スタガー型シリコン薄膜トランジスタの製造方法 |
-
1988
- 1988-09-30 GB GB8822960A patent/GB2223353A/en not_active Withdrawn
-
1989
- 1989-08-08 US US07/390,850 patent/US5047360A/en not_active Expired - Fee Related
- 1989-09-25 EP EP89202406A patent/EP0361609B1/de not_active Expired - Lifetime
- 1989-09-25 DE DE68912482T patent/DE68912482T2/de not_active Expired - Fee Related
- 1989-09-27 KR KR1019890013873A patent/KR900005613A/ko active IP Right Grant
- 1989-09-30 JP JP25380489A patent/JPH0744278B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR900005613A (ko) | 1990-04-14 |
GB8822960D0 (en) | 1988-11-09 |
GB2223353A (en) | 1990-04-04 |
JPH0744278B2 (ja) | 1995-05-15 |
JPH02168630A (ja) | 1990-06-28 |
EP0361609B1 (de) | 1994-01-19 |
EP0361609A2 (de) | 1990-04-04 |
US5047360A (en) | 1991-09-10 |
EP0361609A3 (en) | 1990-05-23 |
DE68912482D1 (de) | 1994-03-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL |
|
8339 | Ceased/non-payment of the annual fee |