DE68911772T2 - Fotodiode und Fotodiodenmatrix aus II-VI-Halbleitermaterial und Herstellungsverfahren dafür. - Google Patents
Fotodiode und Fotodiodenmatrix aus II-VI-Halbleitermaterial und Herstellungsverfahren dafür.Info
- Publication number
- DE68911772T2 DE68911772T2 DE68911772T DE68911772T DE68911772T2 DE 68911772 T2 DE68911772 T2 DE 68911772T2 DE 68911772 T DE68911772 T DE 68911772T DE 68911772 T DE68911772 T DE 68911772T DE 68911772 T2 DE68911772 T2 DE 68911772T2
- Authority
- DE
- Germany
- Prior art keywords
- photodiode
- manufacturing process
- semiconductor material
- matrix made
- process therefor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000463 material Substances 0.000 title 1
- 239000011159 matrix material Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
- H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
- H01L31/1032—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIBVI compounds, e.g. HgCdTe IR photodiodes
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8808074A FR2633101B1 (fr) | 1988-06-16 | 1988-06-16 | Photodiode et matrice de photodiodes sur hgcdte et leurs procedes de fabrication |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE68911772D1 DE68911772D1 (de) | 1994-02-10 |
| DE68911772T2 true DE68911772T2 (de) | 1994-06-30 |
Family
ID=9367367
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE68911772T Expired - Lifetime DE68911772T2 (de) | 1988-06-16 | 1989-06-15 | Fotodiode und Fotodiodenmatrix aus II-VI-Halbleitermaterial und Herstellungsverfahren dafür. |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4972244A (de) |
| EP (1) | EP0350351B1 (de) |
| DE (1) | DE68911772T2 (de) |
| FR (1) | FR2633101B1 (de) |
Families Citing this family (62)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2773930B2 (ja) * | 1989-10-31 | 1998-07-09 | 三菱電機株式会社 | 光検知装置 |
| US5049962A (en) * | 1990-03-07 | 1991-09-17 | Santa Barbara Research Center | Control of optical crosstalk between adjacent photodetecting regions |
| US5141878A (en) * | 1990-04-02 | 1992-08-25 | At&T Bell Laboratories | Silicon photodiode for monolithic integrated circuits and method for making same |
| US5239193A (en) * | 1990-04-02 | 1993-08-24 | At&T Bell Laboratories | Silicon photodiode for monolithic integrated circuits |
| JPH0492481A (ja) * | 1990-08-07 | 1992-03-25 | Mitsubishi Electric Corp | 光検知装置 |
| GB2247985A (en) * | 1990-09-12 | 1992-03-18 | Philips Electronic Associated | Plural-wavelength infrared detector devices |
| US5227656A (en) * | 1990-11-06 | 1993-07-13 | Cincinnati Electronics Corporation | Electro-optical detector array |
| JPH04218964A (ja) * | 1990-12-19 | 1992-08-10 | Fujitsu Ltd | 半導体装置およびその製造方法 |
| US5177580A (en) * | 1991-01-22 | 1993-01-05 | Santa Barbara Research Center | Implant guarded mesa having improved detector uniformity |
| GB2265253A (en) * | 1992-03-18 | 1993-09-22 | Philips Electronics Uk Ltd | Infrared detector devices and their manufacture using directional etching to define connections |
| US5851725A (en) * | 1993-01-26 | 1998-12-22 | The United States Of America As Represented By The Secretary Of Commerce | Exposure of lithographic resists by metastable rare gas atoms |
| US6043548A (en) * | 1993-04-14 | 2000-03-28 | Yeda Research And Development Co., Ltd. | Semiconductor device with stabilized junction |
| US5593902A (en) * | 1994-05-23 | 1997-01-14 | Texas Instruments Incorporated | Method of making photodiodes for low dark current operation having geometric enhancement |
| US6015998A (en) * | 1997-12-17 | 2000-01-18 | Lucent Technolgies, Inc. | Flexibility control in optical materials |
| US6037643A (en) * | 1998-02-17 | 2000-03-14 | Hewlett-Packard Company | Photocell layout for high-speed optical navigation microchips |
| US6133615A (en) * | 1998-04-13 | 2000-10-17 | Wisconsin Alumni Research Foundation | Photodiode arrays having minimized cross-talk between diodes |
| US6157854A (en) | 1999-01-13 | 2000-12-05 | Bales Scientific Inc. | Photon irradiation human pain treatment monitored by thermal imaging |
| US6232626B1 (en) * | 1999-02-01 | 2001-05-15 | Micron Technology, Inc. | Trench photosensor for a CMOS imager |
| US20030089929A1 (en) * | 2001-02-14 | 2003-05-15 | Rhodes Howard E. | Trench photosensor for a CMOS imager |
| US6252251B1 (en) * | 1999-06-09 | 2001-06-26 | Lucent Technologies Inc. | Raised photodetector with recessed light responsive region |
| FR2800666A1 (fr) * | 1999-11-10 | 2001-05-11 | Commissariat Energie Atomique | Tete d'impression et procede de realisation de tete d'impression |
| US6323054B1 (en) * | 2000-05-31 | 2001-11-27 | Taiwan Semiconductor Manufacturing Company | Lateral P-I-N photodiode element with high quantum efficiency for a CMOS image sensor |
| US6611037B1 (en) * | 2000-08-28 | 2003-08-26 | Micron Technology, Inc. | Multi-trench region for accumulation of photo-generated charge in a CMOS imager |
| IES20010616A2 (en) * | 2001-06-28 | 2002-05-15 | Nat Microelectronics Res Ct | Microelectronic device and method of its manufacture |
| US7098105B2 (en) * | 2004-05-26 | 2006-08-29 | Micron Technology, Inc. | Methods for forming semiconductor structures |
| US7442976B2 (en) * | 2004-09-01 | 2008-10-28 | Micron Technology, Inc. | DRAM cells with vertical transistors |
| US7923373B2 (en) | 2007-06-04 | 2011-04-12 | Micron Technology, Inc. | Pitch multiplication using self-assembling materials |
| US8847386B2 (en) * | 2007-06-29 | 2014-09-30 | Koninklijke Philips N.V. | Electrical contact for a cadmium tellurium component |
| ITTO20080046A1 (it) * | 2008-01-18 | 2009-07-19 | St Microelectronics Srl | Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione |
| ITTO20080045A1 (it) | 2008-01-18 | 2009-07-19 | St Microelectronics Srl | Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione |
| US8866065B2 (en) | 2010-12-13 | 2014-10-21 | Zena Technologies, Inc. | Nanowire arrays comprising fluorescent nanowires |
| US8791470B2 (en) | 2009-10-05 | 2014-07-29 | Zena Technologies, Inc. | Nano structured LEDs |
| US9406709B2 (en) | 2010-06-22 | 2016-08-02 | President And Fellows Of Harvard College | Methods for fabricating and using nanowires |
| US8384007B2 (en) | 2009-10-07 | 2013-02-26 | Zena Technologies, Inc. | Nano wire based passive pixel image sensor |
| US8507840B2 (en) | 2010-12-21 | 2013-08-13 | Zena Technologies, Inc. | Vertically structured passive pixel arrays and methods for fabricating the same |
| US8890271B2 (en) | 2010-06-30 | 2014-11-18 | Zena Technologies, Inc. | Silicon nitride light pipes for image sensors |
| US8735797B2 (en) | 2009-12-08 | 2014-05-27 | Zena Technologies, Inc. | Nanowire photo-detector grown on a back-side illuminated image sensor |
| US8546742B2 (en) | 2009-06-04 | 2013-10-01 | Zena Technologies, Inc. | Array of nanowires in a single cavity with anti-reflective coating on substrate |
| US8299472B2 (en) | 2009-12-08 | 2012-10-30 | Young-June Yu | Active pixel sensor with nanowire structured photodetectors |
| US9299866B2 (en) * | 2010-12-30 | 2016-03-29 | Zena Technologies, Inc. | Nanowire array based solar energy harvesting device |
| US8269985B2 (en) | 2009-05-26 | 2012-09-18 | Zena Technologies, Inc. | Determination of optimal diameters for nanowires |
| US8748799B2 (en) | 2010-12-14 | 2014-06-10 | Zena Technologies, Inc. | Full color single pixel including doublet or quadruplet si nanowires for image sensors |
| US9478685B2 (en) | 2014-06-23 | 2016-10-25 | Zena Technologies, Inc. | Vertical pillar structured infrared detector and fabrication method for the same |
| US8229255B2 (en) | 2008-09-04 | 2012-07-24 | Zena Technologies, Inc. | Optical waveguides in image sensors |
| US8835831B2 (en) | 2010-06-22 | 2014-09-16 | Zena Technologies, Inc. | Polarized light detecting device and fabrication methods of the same |
| US9515218B2 (en) | 2008-09-04 | 2016-12-06 | Zena Technologies, Inc. | Vertical pillar structured photovoltaic devices with mirrors and optical claddings |
| US8889455B2 (en) | 2009-12-08 | 2014-11-18 | Zena Technologies, Inc. | Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor |
| US8519379B2 (en) | 2009-12-08 | 2013-08-27 | Zena Technologies, Inc. | Nanowire structured photodiode with a surrounding epitaxially grown P or N layer |
| US9343490B2 (en) | 2013-08-09 | 2016-05-17 | Zena Technologies, Inc. | Nanowire structured color filter arrays and fabrication method of the same |
| US9000353B2 (en) | 2010-06-22 | 2015-04-07 | President And Fellows Of Harvard College | Light absorption and filtering properties of vertically oriented semiconductor nano wires |
| US8274039B2 (en) | 2008-11-13 | 2012-09-25 | Zena Technologies, Inc. | Vertical waveguides with various functionality on integrated circuits |
| US9082673B2 (en) | 2009-10-05 | 2015-07-14 | Zena Technologies, Inc. | Passivated upstanding nanostructures and methods of making the same |
| IT1392366B1 (it) * | 2008-12-17 | 2012-02-28 | St Microelectronics Rousset | Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile, schiera di fotodiodi e relativo procedimento di fabbricazione |
| IT1399690B1 (it) | 2010-03-30 | 2013-04-26 | St Microelectronics Srl | Fotodiodo a valanga operante in modalita' geiger ad elevato rapporto segnale rumore e relativo procedimento di fabbricazione |
| US9882075B2 (en) * | 2013-03-15 | 2018-01-30 | Maxim Integrated Products, Inc. | Light sensor with vertical diode junctions |
| FR3021807B1 (fr) * | 2014-05-27 | 2017-09-29 | Commissariat A L Energie Atomique Et Aux Energies Alternatives | Matrice de photodiodes mesa a ftm amelioree |
| FR3038714B1 (fr) * | 2015-07-08 | 2017-08-25 | Centre Nat Rech Scient | Spectrometre multicanal munie d’une couche photosensible a gradient lateral de composition |
| US9653511B2 (en) * | 2015-08-11 | 2017-05-16 | Omnivision Technologies, Inc. | CMOS image sensor with peninsular ground contracts and method of manufacturing the same |
| FR3044465B1 (fr) * | 2015-11-27 | 2018-03-16 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif de photo-detection a reseau inter-diodes sur-dope par diffusion de metal et procede de fabrication |
| FR3050572B1 (fr) * | 2016-04-26 | 2018-04-13 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif de photo-detection a reseau inter-diodes sur-dope et procede de fabrication |
| CN110914715B (zh) * | 2017-07-26 | 2023-09-22 | 深圳帧观德芯科技有限公司 | 辐射检测器及其制造方法 |
| JP7116591B2 (ja) * | 2018-05-18 | 2022-08-10 | キヤノン株式会社 | 撮像装置及びその製造方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3878553A (en) * | 1972-12-26 | 1975-04-15 | Texas Instruments Inc | Interdigitated mesa beam lead diode and series array thereof |
| US4206003A (en) * | 1977-07-05 | 1980-06-03 | Honeywell Inc. | Method of forming a mercury cadmium telluride photodiode |
| US4290844A (en) * | 1979-02-26 | 1981-09-22 | Carson Alexiou Corporation | Focal plane photo-detector mosaic array fabrication |
| US4524378A (en) * | 1980-08-04 | 1985-06-18 | Hughes Aircraft Company | Anodizable metallic contacts to mercury cadmium telleride |
| DE3278553D1 (en) * | 1981-06-24 | 1988-06-30 | Secr Defence Brit | Photo diodes |
| JPS5854671A (ja) * | 1981-09-28 | 1983-03-31 | Nec Corp | 固体撮像素子 |
| US4646120A (en) * | 1985-03-21 | 1987-02-24 | The United States Of America As Represented By The Secretary Of The Army | Photodiode array |
| US4695861A (en) * | 1985-10-21 | 1987-09-22 | Honeywell Inc. | Backside mosaic photoconductive infrared detector array |
| US4639756A (en) * | 1986-05-05 | 1987-01-27 | Santa Barbara Research Center | Graded gap inversion layer photodiode array |
| FR2604298B1 (fr) * | 1986-09-19 | 1988-10-28 | Commissariat Energie Atomique | Procede de realisation d'une prise de contact electrique sur un substrat en hgcdte de conductivite p et application a la fabrication d'une diode n/p |
-
1988
- 1988-06-16 FR FR8808074A patent/FR2633101B1/fr not_active Expired - Lifetime
-
1989
- 1989-06-07 US US07/362,605 patent/US4972244A/en not_active Expired - Lifetime
- 1989-06-15 EP EP89401684A patent/EP0350351B1/de not_active Expired - Lifetime
- 1989-06-15 DE DE68911772T patent/DE68911772T2/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0350351A1 (de) | 1990-01-10 |
| DE68911772D1 (de) | 1994-02-10 |
| FR2633101B1 (fr) | 1992-02-07 |
| US4972244A (en) | 1990-11-20 |
| EP0350351B1 (de) | 1993-12-29 |
| FR2633101A1 (fr) | 1989-12-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |