DE68905784T2 - Verfahren zur Herstellung eines mehrfachen, ionenselektiven Membransensors. - Google Patents

Verfahren zur Herstellung eines mehrfachen, ionenselektiven Membransensors.

Info

Publication number
DE68905784T2
DE68905784T2 DE89203254T DE68905784T DE68905784T2 DE 68905784 T2 DE68905784 T2 DE 68905784T2 DE 89203254 T DE89203254 T DE 89203254T DE 68905784 T DE68905784 T DE 68905784T DE 68905784 T2 DE68905784 T2 DE 68905784T2
Authority
DE
Germany
Prior art keywords
deposition
preparation
siloxanic
followed
solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89203254T
Other languages
English (en)
Other versions
DE68905784D1 (de
Inventor
Massimo Battilotti
Giuseppina Mazzamurro
Matteo Giongo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eni Tecnologie SpA
Original Assignee
Eniricerche SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eniricerche SpA filed Critical Eniricerche SpA
Application granted granted Critical
Publication of DE68905784D1 publication Critical patent/DE68905784D1/de
Publication of DE68905784T2 publication Critical patent/DE68905784T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
DE89203254T 1988-12-23 1989-12-20 Verfahren zur Herstellung eines mehrfachen, ionenselektiven Membransensors. Expired - Fee Related DE68905784T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8823105A IT1228120B (it) 1988-12-23 1988-12-23 Procedimento per ottenere un sensore multifunzionale a membrana ionoselettiva

Publications (2)

Publication Number Publication Date
DE68905784D1 DE68905784D1 (de) 1993-05-06
DE68905784T2 true DE68905784T2 (de) 1993-10-28

Family

ID=11203833

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89203254T Expired - Fee Related DE68905784T2 (de) 1988-12-23 1989-12-20 Verfahren zur Herstellung eines mehrfachen, ionenselektiven Membransensors.

Country Status (6)

Country Link
US (1) US5130265A (de)
EP (1) EP0375070B1 (de)
AT (1) ATE87740T1 (de)
DE (1) DE68905784T2 (de)
ES (1) ES2040989T3 (de)
IT (1) IT1228120B (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2666930B1 (fr) * 1990-09-14 1992-12-18 Lyon Ecole Centrale Procede et realisation d'une surface-grille d'un capteur electrochimique integre, constitue d'un transistor a effet de champ et sensible aux especes alcalino-terreuses et capteur obtenu.
CH683874A5 (fr) * 1990-10-02 1994-05-31 Suisse Electronique Microtech Dispositif semi-conducteur comportant une membrane possédant une sensibilité sélective aux ions et procédé de réalisation de la membrane.
ES2114436B1 (es) * 1995-03-31 1999-04-01 Consejo Superior Investigacion Encapsulacion automatizada de sensores quimicos de estado solido empleando fotopolimeros que contienen resinas epoxi y poliuretanos acrilatos.
US5854863A (en) * 1996-03-15 1998-12-29 Erb; Judith Surface treatment and light injection method and apparatus
DE19829413A1 (de) * 1998-07-01 2000-01-13 Michael Glaeser Verfahren zur Herstellung von ionensensitiven und Membrane darstellende Schichten auf einem Träger und Verwendung mindestens einer Drucktechnik zur Herstellung von Anordnungen zur qualitativen und/oder quantitativen Bestimmung von Ionen oder Stoffen in Lösungen
US6387724B1 (en) 1999-02-26 2002-05-14 Dynamics Research Corporation Method of fabricating silicon-on-insulator sensor having silicon oxide sensing surface
WO2001057920A1 (en) * 2000-02-01 2001-08-09 Analog Devices, Inc. Process for wafer level treatment to reduce stiction and passivate micromachined surfaces and compounds used therefor
TW465055B (en) 2000-07-20 2001-11-21 Univ Nat Yunlin Sci & Tech Method and apparatus for measurement of temperature parameter of ISFET using amorphous silicon hydride as sensor membrane
GB0024294D0 (en) * 2000-10-04 2000-11-15 Univ Cambridge Tech Solid state embossing of polymer devices
TW544752B (en) 2002-05-20 2003-08-01 Univ Nat Yunlin Sci & Tech Method for producing SnO2 gate ion sensitive field effect transistor (ISFET), and method and device for measuring the temperature parameters, drift and hysteresis values thereof
US8586149B2 (en) * 2003-06-18 2013-11-19 Ford Global Technologies, Llc Environmentally friendly reactive fixture to allow localized surface engineering for improved adhesion to coated and non-coated substrates
TWI241020B (en) * 2004-03-31 2005-10-01 Univ Nat Yunlin Sci & Tech Method of manufacturing TiO2 sensing film, ISFET having TiO2 sensing film, and methods and apparatus for measuring the temperature parameter, drift, and hysteresis thereof
TWI244702B (en) * 2005-04-04 2005-12-01 Univ Nat Yunlin Sci & Tech Titanium oxide thin film for extended gate field effect transistor using reactive sputtering
US7517561B2 (en) * 2005-09-21 2009-04-14 Ford Global Technologies, Llc Method of coating a substrate for adhesive bonding
TWI295729B (en) * 2005-11-01 2008-04-11 Univ Nat Yunlin Sci & Tech Preparation of a ph sensor, the prepared ph sensor, systems comprising the same, and measurement using the systems
US7744984B2 (en) * 2006-06-28 2010-06-29 Ford Global Technologies, Llc Method of treating substrates for bonding
TW200815750A (en) * 2006-09-19 2008-04-01 Univ Nat Yunlin Sci & Tech System of measuring pH values of solutions and method for reducing time-drift effects of sensors thereof
US20100151236A1 (en) * 2008-12-11 2010-06-17 Ford Global Technologies, Llc Surface treatment for polymeric part adhesion

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5466194A (en) * 1977-11-04 1979-05-28 Kuraray Co Fet sensor
DE2750807C3 (de) * 1977-11-14 1982-05-19 Dr. Eduard Fresenius, Chemisch-pharmazeutische Industrie KG Apparatebau KG, 6380 Bad Homburg Membran mit ionenselektiven Eigenschaften
JPS5825221B2 (ja) * 1977-12-12 1983-05-26 株式会社クラレ Ｆｅｔ比較電極
US4505799A (en) * 1983-12-08 1985-03-19 General Signal Corporation ISFET sensor and method of manufacture
NL8400916A (nl) * 1984-03-22 1985-10-16 Stichting Ct Voor Micro Elektr Werkwijze voor het vervaardigen van een isfet en een aldus vervaardigde isfet.
DE3526348A1 (de) * 1985-07-23 1987-02-05 Fraunhofer Ges Forschung Sensoren fuer die selektive bestimmung von komponenten in fluessiger oder gasfoermiger phase
IT1198226B (it) * 1986-12-04 1988-12-21 Eniricerche Spa Dispositivo sensibile agli ioni
IT1222121B (it) * 1987-07-24 1990-08-31 Eniricerche Spa Sensore per ioni contenente una membrana organica selettiva
US4874499A (en) * 1988-05-23 1989-10-17 Massachusetts Institute Of Technology Electrochemical microsensors and method of making such sensors

Also Published As

Publication number Publication date
IT1228120B (it) 1991-05-28
DE68905784D1 (de) 1993-05-06
EP0375070A1 (de) 1990-06-27
ES2040989T3 (es) 1993-11-01
EP0375070B1 (de) 1993-03-31
ATE87740T1 (de) 1993-04-15
US5130265A (en) 1992-07-14
IT8823105A0 (it) 1988-12-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee