DE68905529T2 - Laserkristall aus diamant und verfahren zu seiner herstellung. - Google Patents

Laserkristall aus diamant und verfahren zu seiner herstellung.

Info

Publication number
DE68905529T2
DE68905529T2 DE8989110576T DE68905529T DE68905529T2 DE 68905529 T2 DE68905529 T2 DE 68905529T2 DE 8989110576 T DE8989110576 T DE 8989110576T DE 68905529 T DE68905529 T DE 68905529T DE 68905529 T2 DE68905529 T2 DE 68905529T2
Authority
DE
Germany
Prior art keywords
producing
same
laser crystal
diamond laser
diamond
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8989110576T
Other languages
English (en)
Other versions
DE68905529D1 (de
Inventor
Nakashima Itami Works Takeru
Satoh Itami Works Shuichi
Tsuji Itami Works Kazuwo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE68905529D1 publication Critical patent/DE68905529D1/de
Application granted granted Critical
Publication of DE68905529T2 publication Critical patent/DE68905529T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1681—Solid materials using colour centres
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0605—Composition of the material to be processed
    • B01J2203/062—Diamond
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/065—Composition of the material produced
    • B01J2203/0655—Diamond
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0675—Structural or physico-chemical features of the materials processed
    • B01J2203/069—Recrystallisation
DE8989110576T 1988-06-13 1989-06-12 Laserkristall aus diamant und verfahren zu seiner herstellung. Expired - Fee Related DE68905529T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP14528688 1988-06-13
JP1137745A JPH0288498A (ja) 1988-06-13 1989-05-30 ダイヤモンドレーザ結晶およびその作製方法

Publications (2)

Publication Number Publication Date
DE68905529D1 DE68905529D1 (de) 1993-04-29
DE68905529T2 true DE68905529T2 (de) 1993-07-01

Family

ID=26470966

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8989110576T Expired - Fee Related DE68905529T2 (de) 1988-06-13 1989-06-12 Laserkristall aus diamant und verfahren zu seiner herstellung.

Country Status (5)

Country Link
US (1) US4950625A (de)
EP (1) EP0346794B1 (de)
JP (1) JPH0288498A (de)
CA (1) CA1321530C (de)
DE (1) DE68905529T2 (de)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6007916A (en) * 1989-04-06 1999-12-28 Sumitomo Electric Industries, Ltd. Synthetic single crystal diamond for wiring drawing dies and process for producing the same
DE69016240T3 (de) * 1989-04-06 1999-03-11 Sumitomo Electric Industries Diamant für Abrichtungsvorrichtung
CA2059020C (en) * 1991-01-09 1998-08-18 Kohji Kimbara Polyimide multilayer wiring board and method of producing same
US5240749A (en) * 1991-08-27 1993-08-31 University Of Central Florida Method for growing a diamond thin film on a substrate by plasma enhanced chemical vapor deposition
JP3462514B2 (ja) * 1992-09-16 2003-11-05 住友電気工業株式会社 固体レーザ
US5554415A (en) * 1994-01-18 1996-09-10 Qqc, Inc. Substrate coating techniques, including fabricating materials on a surface of a substrate
US5731046A (en) * 1994-01-18 1998-03-24 Qqc, Inc. Fabrication of diamond and diamond-like carbon coatings
US5620754A (en) * 1994-01-21 1997-04-15 Qqc, Inc. Method of treating and coating substrates
GB0227261D0 (en) 2002-11-21 2002-12-31 Element Six Ltd Optical quality diamond material
US7224532B2 (en) * 2002-12-06 2007-05-29 Chevron U.S.A. Inc. Optical uses diamondoid-containing materials
US20050019955A1 (en) * 2003-07-23 2005-01-27 Dahl Jeremy E. Luminescent heterodiamondoids as biological labels
WO2008007336A2 (en) * 2006-07-10 2008-01-17 Element Six Technologies (Pty) Ltd A method for producing diamond material
US8384007B2 (en) 2009-10-07 2013-02-26 Zena Technologies, Inc. Nano wire based passive pixel image sensor
US9343490B2 (en) 2013-08-09 2016-05-17 Zena Technologies, Inc. Nanowire structured color filter arrays and fabrication method of the same
US8229255B2 (en) 2008-09-04 2012-07-24 Zena Technologies, Inc. Optical waveguides in image sensors
US8274039B2 (en) 2008-11-13 2012-09-25 Zena Technologies, Inc. Vertical waveguides with various functionality on integrated circuits
US8890271B2 (en) 2010-06-30 2014-11-18 Zena Technologies, Inc. Silicon nitride light pipes for image sensors
US9406709B2 (en) 2010-06-22 2016-08-02 President And Fellows Of Harvard College Methods for fabricating and using nanowires
US9299866B2 (en) 2010-12-30 2016-03-29 Zena Technologies, Inc. Nanowire array based solar energy harvesting device
US8835831B2 (en) 2010-06-22 2014-09-16 Zena Technologies, Inc. Polarized light detecting device and fabrication methods of the same
US20110115041A1 (en) * 2009-11-19 2011-05-19 Zena Technologies, Inc. Nanowire core-shell light pipes
US9515218B2 (en) 2008-09-04 2016-12-06 Zena Technologies, Inc. Vertical pillar structured photovoltaic devices with mirrors and optical claddings
US8889455B2 (en) 2009-12-08 2014-11-18 Zena Technologies, Inc. Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor
US8791470B2 (en) 2009-10-05 2014-07-29 Zena Technologies, Inc. Nano structured LEDs
US9000353B2 (en) 2010-06-22 2015-04-07 President And Fellows Of Harvard College Light absorption and filtering properties of vertically oriented semiconductor nano wires
US8299472B2 (en) 2009-12-08 2012-10-30 Young-June Yu Active pixel sensor with nanowire structured photodetectors
US8866065B2 (en) 2010-12-13 2014-10-21 Zena Technologies, Inc. Nanowire arrays comprising fluorescent nanowires
US9478685B2 (en) 2014-06-23 2016-10-25 Zena Technologies, Inc. Vertical pillar structured infrared detector and fabrication method for the same
US8269985B2 (en) 2009-05-26 2012-09-18 Zena Technologies, Inc. Determination of optimal diameters for nanowires
US8735797B2 (en) 2009-12-08 2014-05-27 Zena Technologies, Inc. Nanowire photo-detector grown on a back-side illuminated image sensor
US9082673B2 (en) 2009-10-05 2015-07-14 Zena Technologies, Inc. Passivated upstanding nanostructures and methods of making the same
US8546742B2 (en) 2009-06-04 2013-10-01 Zena Technologies, Inc. Array of nanowires in a single cavity with anti-reflective coating on substrate
US8519379B2 (en) 2009-12-08 2013-08-27 Zena Technologies, Inc. Nanowire structured photodiode with a surrounding epitaxially grown P or N layer
US8748799B2 (en) 2010-12-14 2014-06-10 Zena Technologies, Inc. Full color single pixel including doublet or quadruplet si nanowires for image sensors
US8507840B2 (en) 2010-12-21 2013-08-13 Zena Technologies, Inc. Vertically structured passive pixel arrays and methods for fabricating the same
JP5527628B2 (ja) * 2012-04-09 2014-06-18 住友電気工業株式会社 ダイヤモンド単結晶
US10586702B2 (en) 2015-08-07 2020-03-10 North Carolina State University Synthesis and processing of novel phase of carbon (Q-carbon)
GB201608669D0 (en) * 2016-05-17 2016-06-29 Element Six Uk Ltd Diamond tool piece
WO2018005619A1 (en) 2016-06-28 2018-01-04 North Carolina State University Synthesis and processing of pure and nv nanodiamonds and other nanostructures for quantum computing and magnetic sensing applications
TWI804596B (zh) * 2018-04-24 2023-06-11 美商戴蒙創新公司 螢光鑽石材料及製造其之方法
CN114729469A (zh) * 2019-11-26 2022-07-08 住友电气工业株式会社 合成单晶金刚石、具备其的工具、及合成单晶金刚石的制造方法
CN111411397A (zh) * 2020-03-30 2020-07-14 湖州中芯半导体科技有限公司 一种氮掺杂cvd金刚石激光晶体及其制备方法
JPWO2022004149A1 (de) * 2020-06-30 2022-01-06

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4174380A (en) * 1976-07-21 1979-11-13 General Electric Company Annealing synthetic diamond type Ib
ZA797004B (en) * 1979-01-17 1980-11-26 De Beers Ind Diamond Diamond treatment
US4638484A (en) * 1984-11-20 1987-01-20 Hughes Aircraft Company Solid state laser employing diamond having color centers as a laser active material

Also Published As

Publication number Publication date
JPH0288498A (ja) 1990-03-28
DE68905529D1 (de) 1993-04-29
EP0346794B1 (de) 1993-03-24
US4950625A (en) 1990-08-21
CA1321530C (en) 1993-08-24
EP0346794A1 (de) 1989-12-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee