DE60336531D1 - Magnetoresistives Element und Magnetischer Speicher die hohe Dichte ermöglischen - Google Patents

Magnetoresistives Element und Magnetischer Speicher die hohe Dichte ermöglischen

Info

Publication number
DE60336531D1
DE60336531D1 DE60336531T DE60336531T DE60336531D1 DE 60336531 D1 DE60336531 D1 DE 60336531D1 DE 60336531 T DE60336531 T DE 60336531T DE 60336531 T DE60336531 T DE 60336531T DE 60336531 D1 DE60336531 D1 DE 60336531D1
Authority
DE
Germany
Prior art keywords
high density
magnetic memory
magnetoresistive element
memory enable
enable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60336531T
Other languages
English (en)
Inventor
Tadashi Kai
S Takahashi
Tomomasa Ueda
Tatsuya Kishi
Yoshiaki Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE60336531D1 publication Critical patent/DE60336531D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
DE60336531T 2002-09-30 2003-09-25 Magnetoresistives Element und Magnetischer Speicher die hohe Dichte ermöglischen Expired - Lifetime DE60336531D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002287412A JP3684225B2 (ja) 2002-09-30 2002-09-30 磁気抵抗効果素子および磁気メモリ

Publications (1)

Publication Number Publication Date
DE60336531D1 true DE60336531D1 (de) 2011-05-12

Family

ID=31973443

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60336531T Expired - Lifetime DE60336531D1 (de) 2002-09-30 2003-09-25 Magnetoresistives Element und Magnetischer Speicher die hohe Dichte ermöglischen

Country Status (7)

Country Link
US (2) US6949779B2 (de)
EP (1) EP1403875B1 (de)
JP (1) JP3684225B2 (de)
KR (1) KR100776879B1 (de)
CN (1) CN100350498C (de)
DE (1) DE60336531D1 (de)
TW (1) TWI221290B (de)

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JP4606072B2 (ja) * 2004-06-24 2011-01-05 アルプス電気株式会社 磁気検出素子の製造方法
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JP2006185961A (ja) * 2004-12-24 2006-07-13 Toshiba Corp 磁気ランダムアクセスメモリ
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JP2007027415A (ja) * 2005-07-15 2007-02-01 Toshiba Corp 磁気記憶装置
JP4468258B2 (ja) * 2005-07-15 2010-05-26 株式会社東芝 磁気抵抗効果素子および磁気メモリ
JP4557841B2 (ja) * 2005-08-30 2010-10-06 株式会社東芝 磁気ランダムアクセスメモリ、磁気ランダムアクセスメモリのデータ書き込み方法、および、磁気ランダムアクセスメモリの製造方法
JP4936701B2 (ja) * 2005-09-29 2012-05-23 株式会社東芝 磁気メモリ
JP2007123363A (ja) * 2005-10-25 2007-05-17 Ind Technol Res Inst 磁気トンネル接合デバイス用シミュレーション回路
JP5193419B2 (ja) * 2005-10-28 2013-05-08 株式会社東芝 スピン注入磁気ランダムアクセスメモリとその書き込み方法
US7755153B2 (en) * 2006-01-13 2010-07-13 Macronix International Co. Ltd. Structure and method for a magnetic memory device with proximity writing
KR100718153B1 (ko) * 2006-02-17 2007-05-14 삼성전자주식회사 마그네틱 도메인 이동을 이용한 자기메모리
JP2007281229A (ja) * 2006-04-07 2007-10-25 Toshiba Corp 磁気抵抗ランダムアクセスメモリ、その書き込み方法、およびテスト方法
US7483295B2 (en) * 2007-04-23 2009-01-27 Mag Ic Technologies, Inc. MTJ sensor including domain stable free layer
TWI438871B (zh) * 2007-05-08 2014-05-21 Magsil Corp 可程式化磁性唯讀記憶體（ｍｒｏｍ）
US20090128966A1 (en) * 2007-10-10 2009-05-21 Krishnakumar Mani Magnetic memory cell based on a magnetic tunnel junction(mtj) with low switching field shapes
US8264052B2 (en) * 2008-08-28 2012-09-11 Qualcomm Incorporated Symmetric STT-MRAM bit cell design
WO2010048416A1 (en) * 2008-10-22 2010-04-29 3M Innovative Properties Company Retroreflective sheeting
JP4678447B2 (ja) * 2009-05-19 2011-04-27 ソニー株式会社 不揮発性磁気メモリ装置
KR101598831B1 (ko) * 2009-10-14 2016-03-03 삼성전자주식회사 자기저항소자, 이를 포함하는 정보저장장치 및 상기 정보저장장치의 동작방법
JP2012008760A (ja) * 2010-06-24 2012-01-12 Sony Corp 携帯情報機器
CN102376874B (zh) * 2011-11-28 2013-07-31 中国科学院半导体研究所 基于二维电子气材料的半导体磁敏型传感器及其制作方法
KR101909201B1 (ko) * 2012-05-18 2018-10-17 삼성전자 주식회사 자기저항요소 및 이를 포함하는 메모리소자
WO2014209402A1 (en) * 2013-06-29 2014-12-31 Intel Corporation Magnetic element for memory and logic
DE102017112546B4 (de) 2017-06-07 2021-07-08 Infineon Technologies Ag Magnetoresistive Sensoren mit Magnetisierungsmustern mit geschlossenem Fluss
JP6508381B1 (ja) * 2018-03-22 2019-05-08 Tdk株式会社 磁気センサ装置
US10729012B2 (en) 2018-04-24 2020-07-28 Micron Technology, Inc. Buried lines and related fabrication techniques
US10950663B2 (en) * 2018-04-24 2021-03-16 Micron Technology, Inc. Cross-point memory array and related fabrication techniques
US10825867B2 (en) 2018-04-24 2020-11-03 Micron Technology, Inc. Cross-point memory array and related fabrication techniques

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US5757695A (en) * 1997-02-05 1998-05-26 Motorola, Inc. Mram with aligned magnetic vectors
DE69835475D1 (de) * 1997-04-28 2006-09-21 Canon Kk Magnetisches Dünnfilmspeicherelement unter Verwendung des GMR-Effekts und magnetischer Dünnfilmspeicher
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US5959880A (en) * 1997-12-18 1999-09-28 Motorola, Inc. Low aspect ratio magnetoresistive tunneling junction
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JP4337641B2 (ja) * 2004-06-10 2009-09-30 ソニー株式会社 不揮発性磁気メモリ装置及びフォトマスク
US7355884B2 (en) * 2004-10-08 2008-04-08 Kabushiki Kaisha Toshiba Magnetoresistive element
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Also Published As

Publication number Publication date
US7470963B2 (en) 2008-12-30
KR20040028507A (ko) 2004-04-03
KR100776879B1 (ko) 2007-11-19
US20040062938A1 (en) 2004-04-01
US6949779B2 (en) 2005-09-27
CN1489152A (zh) 2004-04-14
TWI221290B (en) 2004-09-21
EP1403875A2 (de) 2004-03-31
EP1403875A3 (de) 2004-12-01
JP2004128067A (ja) 2004-04-22
TW200405289A (en) 2004-04-01
EP1403875B1 (de) 2011-03-30
JP3684225B2 (ja) 2005-08-17
US20050280043A1 (en) 2005-12-22
CN100350498C (zh) 2007-11-21

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