DE60328014D1 - Nicht korrodierende reinigungsmittel zur entfernung von ätzmittelrückständen - Google Patents

Nicht korrodierende reinigungsmittel zur entfernung von ätzmittelrückständen

Info

Publication number
DE60328014D1
DE60328014D1 DE60328014T DE60328014T DE60328014D1 DE 60328014 D1 DE60328014 D1 DE 60328014D1 DE 60328014 T DE60328014 T DE 60328014T DE 60328014 T DE60328014 T DE 60328014T DE 60328014 D1 DE60328014 D1 DE 60328014D1
Authority
DE
Germany
Prior art keywords
substrate
carboxylic acid
cleaning agents
corrosive cleaning
detergent residues
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60328014T
Other languages
English (en)
Inventor
Vincent G Leon
Michelle Elderkin
Lawrence Ferreira
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Electronic Materials Co Ltd
Fujifilm Electronic Materials USA Inc
Original Assignee
Fujifilm Electronic Materials Co Ltd
Fujifilm Electronic Materials USA Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Electronic Materials Co Ltd, Fujifilm Electronic Materials USA Inc filed Critical Fujifilm Electronic Materials Co Ltd
Application granted granted Critical
Publication of DE60328014D1 publication Critical patent/DE60328014D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/28—Organic compounds containing halogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3245—Aminoacids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • C11D2111/20—
    • C11D2111/22—
    • C11D2111/46—
DE60328014T 2002-04-25 2003-04-24 Nicht korrodierende reinigungsmittel zur entfernung von ätzmittelrückständen Expired - Lifetime DE60328014D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US37561302P 2002-04-25 2002-04-25
PCT/US2003/012486 WO2003091377A1 (en) 2002-04-25 2003-04-24 Non-corrosive cleaning compositions for removing etch residues

Publications (1)

Publication Number Publication Date
DE60328014D1 true DE60328014D1 (de) 2009-07-30

Family

ID=29270671

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60328014T Expired - Lifetime DE60328014D1 (de) 2002-04-25 2003-04-24 Nicht korrodierende reinigungsmittel zur entfernung von ätzmittelrückständen

Country Status (8)

Country Link
US (1) US7935665B2 (de)
EP (1) EP1501916B1 (de)
JP (1) JP4634718B2 (de)
KR (1) KR100997180B1 (de)
AT (1) ATE434033T1 (de)
DE (1) DE60328014D1 (de)
TW (1) TWI297725B (de)
WO (1) WO2003091377A1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7084070B1 (en) * 2001-03-30 2006-08-01 Lam Research Corporation Treatment for corrosion in substrate processing
TWI365491B (en) 2003-12-24 2012-06-01 Kao Corp Composition for cleaning semiconductor device
US8338087B2 (en) * 2004-03-03 2012-12-25 Advanced Technology Materials, Inc Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate
US7268071B2 (en) 2005-01-12 2007-09-11 Sony Corporation Dual damascene interconnections having low K layer with reduced damage arising from photoresist stripping
KR101331747B1 (ko) * 2005-01-27 2013-11-20 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 반도체 기판 처리 조성물
US7923423B2 (en) * 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
US7713885B2 (en) * 2005-05-11 2010-05-11 Micron Technology, Inc. Methods of etching oxide, reducing roughness, and forming capacitor constructions
EP1721961B1 (de) * 2005-05-12 2009-04-22 The Procter and Gamble Company Flüssiges saures Reinigungsmittel für harte Oberflächen
EP1721960A1 (de) 2005-05-12 2006-11-15 The Procter & Gamble Company Flüssiges Reinigungsmittel für harte Oberflächen
KR101304622B1 (ko) * 2006-08-29 2013-09-05 동우 화인켐 주식회사 세정제 조성물
US20080076688A1 (en) * 2006-09-21 2008-03-27 Barnes Jeffrey A Copper passivating post-chemical mechanical polishing cleaning composition and method of use
JP5232381B2 (ja) * 2006-11-28 2013-07-10 株式会社ネオス ノンリンス型水溶性洗浄剤組成物
US8178078B2 (en) 2008-06-13 2012-05-15 S.C. Johnson & Son, Inc. Compositions containing a solvated active agent suitable for dispensing as a compressed gas aerosol
WO2010024093A1 (ja) * 2008-08-25 2010-03-04 ダイキン工業株式会社 半導体ドライプロセス後の残渣除去液及びそれを用いた残渣除去方法
KR101799602B1 (ko) * 2009-05-07 2017-11-20 바스프 에스이 레지스트 스트리핑 조성물 및 전기 소자의 제조 방법
JP5647685B2 (ja) * 2009-08-11 2015-01-07 東友ファインケム株式会社 レジスト剥離液組成物及びこれを用いたレジストの剥離方法
JP5646882B2 (ja) * 2009-09-30 2014-12-24 富士フイルム株式会社 洗浄組成物、洗浄方法、及び半導体装置の製造方法
JP5513196B2 (ja) * 2010-03-25 2014-06-04 富士フイルム株式会社 洗浄組成物及び半導体装置の製造方法
US20120090648A1 (en) * 2010-10-15 2012-04-19 United Microelectronics Corp. Cleaning method for semiconductor wafer and cleaning device for semiconductor wafer
KR101830170B1 (ko) * 2011-05-17 2018-02-21 삼성디스플레이 주식회사 산화물 반도체 소자, 산화물 반도체 소자의 제조 방법, 산화물 반도체소자를 포함하는 표시 장치 및 산화물 반도체 소자를 포함하는 표시 장치의 제조 방법
CA2856196C (en) 2011-12-06 2020-09-01 Masco Corporation Of Indiana Ozone distribution in a faucet
WO2017112795A1 (en) 2015-12-21 2017-06-29 Delta Faucet Company Fluid delivery system including a disinfectant device

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3003898A (en) 1960-08-10 1961-10-10 Dow Chemical Co Scale removal
US3166444A (en) 1962-04-26 1965-01-19 Lubrizol Corp Method for cleaning metal articles
US3696044A (en) 1970-07-02 1972-10-03 Atlas Chem Ind Sequestrant compositions
US4264418A (en) 1978-09-19 1981-04-28 Kilene Corp. Method for detersifying and oxide coating removal
CA1242130A (en) 1983-04-12 1988-09-20 Silverio M. Garcia Acidic compositions having ph values of less than about 1 and method for producing same
US6110881A (en) * 1990-11-05 2000-08-29 Ekc Technology, Inc. Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials
US5909742A (en) 1993-03-26 1999-06-08 Betzdearborn Inc. Metal cleaning method
US5977054A (en) * 1993-09-01 1999-11-02 The Procter & Gamble Company Mildly acidic hard surface cleaning compositions containing amine oxide detergent surfactants
JP2731730B2 (ja) 1993-12-22 1998-03-25 インターナショナル・ビジネス・マシーンズ・コーポレイション フォトレジストの除去方法
JPH07286172A (ja) * 1994-04-20 1995-10-31 Asahi Glass Co Ltd エッチング液およびエッチング方法
US6221823B1 (en) 1995-10-25 2001-04-24 Reckitt Benckiser Inc. Germicidal, acidic hard surface cleaning compositions
TW416987B (en) * 1996-06-05 2001-01-01 Wako Pure Chem Ind Ltd A composition for cleaning the semiconductor substrate surface
US6410494B2 (en) 1996-06-05 2002-06-25 Wako Pure Chemical Industries, Ltd. Cleaning agent
US6323168B1 (en) 1996-07-03 2001-11-27 Advanced Technology Materials, Inc. Post plasma ashing wafer cleaning formulation
JPH1055993A (ja) * 1996-08-09 1998-02-24 Hitachi Ltd 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法
US6265781B1 (en) 1996-10-19 2001-07-24 Micron Technology, Inc. Methods and solutions for cleaning polished aluminum-containing layers, methods for making metallization structures, and the structures resulting from these methods
US6268323B1 (en) 1997-05-05 2001-07-31 Arch Specialty Chemicals, Inc. Non-corrosive stripping and cleaning composition
US5977041A (en) 1997-09-23 1999-11-02 Olin Microelectronic Chemicals Aqueous rinsing composition
US6033993A (en) 1997-09-23 2000-03-07 Olin Microelectronic Chemicals, Inc. Process for removing residues from a semiconductor substrate
GB2329901A (en) 1997-09-30 1999-04-07 Reckitt & Colman Inc Acidic hard surface cleaning and disinfecting compositions
TW396446B (en) 1997-11-27 2000-07-01 Toshiba Corp Method for the production of a and a cleanser semiconductor device
US6231677B1 (en) 1998-02-27 2001-05-15 Kanto Kagaku Kabushiki Kaisha Photoresist stripping liquid composition
US6635562B2 (en) 1998-09-15 2003-10-21 Micron Technology, Inc. Methods and solutions for cleaning polished aluminum-containing layers
JP3436346B2 (ja) * 1998-09-16 2003-08-11 宏 徳武 衣料用洗剤組成物
JP4130514B2 (ja) * 1999-05-07 2008-08-06 多摩化学工業株式会社 精密洗浄剤組成物
JP2003500527A (ja) 1999-05-26 2003-01-07 アシュランド インコーポレーテッド 表面からの汚染物質の除去法及びそれに有用な組成物
US6147002A (en) 1999-05-26 2000-11-14 Ashland Inc. Process for removing contaminant from a surface and composition useful therefor
US6361712B1 (en) 1999-10-15 2002-03-26 Arch Specialty Chemicals, Inc. Composition for selective etching of oxides over metals
US6413923B2 (en) * 1999-11-15 2002-07-02 Arch Specialty Chemicals, Inc. Non-corrosive cleaning composition for removing plasma etching residues
US6231678B1 (en) 1999-12-30 2001-05-15 Alcoa Inc. Chemical delacquering process
US6419755B1 (en) 1999-12-30 2002-07-16 Alcoa Inc. Chemical delacquering process
US6498131B1 (en) * 2000-08-07 2002-12-24 Ekc Technology, Inc. Composition for cleaning chemical mechanical planarization apparatus
US6503334B2 (en) 2001-03-14 2003-01-07 Hydrochem Industrial Services, Inc. Forced mist cleaning of combustion turbines
US6627546B2 (en) 2001-06-29 2003-09-30 Ashland Inc. Process for removing contaminant from a surface and composition useful therefor
US6585826B2 (en) 2001-11-02 2003-07-01 Taiwan Semiconductor Manufacturing Co., Ltd Semiconductor wafer cleaning method to remove residual contamination including metal nitride particles
CN1441043A (zh) 2002-02-06 2003-09-10 希普利公司 清洁用组合物
CN1646732A (zh) 2002-08-19 2005-07-27 伊默克化学科技股份有限公司 清洗液

Also Published As

Publication number Publication date
US20030235996A1 (en) 2003-12-25
WO2003091377A1 (en) 2003-11-06
KR20040104622A (ko) 2004-12-10
EP1501916A4 (de) 2005-09-14
KR100997180B1 (ko) 2010-11-29
EP1501916A1 (de) 2005-02-02
US7935665B2 (en) 2011-05-03
TWI297725B (en) 2008-06-11
ATE434033T1 (de) 2009-07-15
JP2005532423A (ja) 2005-10-27
JP4634718B2 (ja) 2011-02-16
TW200307742A (en) 2003-12-16
EP1501916B1 (de) 2009-06-17

Similar Documents

Publication Publication Date Title
DE60328014D1 (de) Nicht korrodierende reinigungsmittel zur entfernung von ätzmittelrückständen
DE60028962D1 (de) Zusammensetzungen zur reinigung und entfernung von organischen sowie plasmaätzrückständen auf halbleitervorrichtungen
TW200630482A (en) Aqueous based residue removers comprising fluoride
AU6348600A (en) Lactam compositions for cleaning organic and plasma etched residues for semiconductor devices
EP1066365A4 (de) Fluoridhaltige saure zusammensetzung zur entfernung von photolack- und ätzrückständen
DE602005025830D1 (de) Zusammensetzung zum Abziehen und Reinigen und deren Verwendung
MY130650A (en) Compositions for removing etching residue and use thereof
ATE420941T1 (de) Chemische spülzusammensetzung
TW200714707A (en) Aqueous cleaning composition for removing residues and method using same
WO2002004233A8 (en) Compositions for cleaning organic and plasma etched residues for semiconductor devices
DE60108774D1 (de) Stabile alkalische zusammensetzungen zum reinigen von mikroelektronischen substraten
ATE517974T1 (de) Wässrige stripp- und reinigungszusammensetzung
DK1105778T3 (da) Silikatholdige alkaliske sammensætninger til rensning af mikorelektroniske substrater
TW200718775A (en) Composition and method for removing thick film photoresist
SG129274A1 (en) Cleaaning solution and cleaning process using the solution
TW200504203A (en) Compositions and methods for high-efficiency cleaning of semiconductor wafers
ATE405622T1 (de) Wässrige phosphorsäurezusammensetzung zur reinigung von halbleiter-vorrichtungen
DE69837011D1 (de) Wässerige abstreif- und reinigungszusammenstellungen
TW200717633A (en) Semiconductor cleaning formulation containing phosphonic acid and ascorbic acid, and cleaning method
BR0307024A (pt) Processo para a remoção de sujeira gordurosa de uma superfìcie dura, composição lìquida para limpeza, e, uso de um antioxidante removedor de radical e de peróxido de hidrogênio em uma composição lìquida para limpeza
DE60238244D1 (de) Wässriges reinigungsmittel mit kupferspezifischem korrosionsschutzmittel zur abreinigung anorganischer reste von halbleitersubstraten
ES2170887T3 (es) Composiciones limpiadoras.
DE60010718D1 (de) Zusammensetzung zum metallreinigen
WO2005008739A3 (en) Micellar technology for post-etch residues
JP3183370B2 (ja) 変性油脂汚れ用洗浄剤組成物

Legal Events

Date Code Title Description
8364 No opposition during term of opposition