DE60323726D1 - Bebilderbare, positiv arbeitende reflexvermindernde unterschicht - Google Patents

Bebilderbare, positiv arbeitende reflexvermindernde unterschicht

Info

Publication number
DE60323726D1
DE60323726D1 DE60323726T DE60323726T DE60323726D1 DE 60323726 D1 DE60323726 D1 DE 60323726D1 DE 60323726 T DE60323726 T DE 60323726T DE 60323726 T DE60323726 T DE 60323726T DE 60323726 D1 DE60323726 D1 DE 60323726D1
Authority
DE
Germany
Prior art keywords
relates
antireflective coating
photoimageable
composition
novel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60323726T
Other languages
English (en)
Inventor
Joseph E Oberlander
Ralph R Dammel
Shuji Ding-Lee
Mark O Neisser
Medhat A Toukhy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EMD Performance Materials Corp
Original Assignee
AZ Electronic Materials USA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AZ Electronic Materials USA Corp filed Critical AZ Electronic Materials USA Corp
Application granted granted Critical
Publication of DE60323726D1 publication Critical patent/DE60323726D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61PSPECIFIC THERAPEUTIC ACTIVITY OF CHEMICAL COMPOUNDS OR MEDICINAL PREPARATIONS
    • A61P29/00Non-central analgesic, antipyretic or antiinflammatory agents, e.g. antirheumatic agents; Non-steroidal antiinflammatory drugs [NSAID]
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/38Treatment before imagewise removal, e.g. prebaking
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/106Binder containing
DE60323726T 2002-01-09 2003-01-03 Bebilderbare, positiv arbeitende reflexvermindernde unterschicht Expired - Lifetime DE60323726D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/042,532 US6844131B2 (en) 2002-01-09 2002-01-09 Positive-working photoimageable bottom antireflective coating
PCT/EP2003/000022 WO2003057678A1 (en) 2002-01-09 2003-01-03 Positive-working photoimageable bottom antireflective coating

Publications (1)

Publication Number Publication Date
DE60323726D1 true DE60323726D1 (de) 2008-11-06

Family

ID=21922430

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60323726T Expired - Lifetime DE60323726D1 (de) 2002-01-09 2003-01-03 Bebilderbare, positiv arbeitende reflexvermindernde unterschicht

Country Status (10)

Country Link
US (1) US6844131B2 (de)
EP (1) EP1465877B1 (de)
JP (1) JP2005517972A (de)
KR (3) KR101020685B1 (de)
CN (2) CN100526982C (de)
AT (1) ATE409183T1 (de)
DE (1) DE60323726D1 (de)
MY (1) MY132774A (de)
TW (1) TWI295412B (de)
WO (1) WO2003057678A1 (de)

Families Citing this family (116)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6824879B2 (en) 1999-06-10 2004-11-30 Honeywell International Inc. Spin-on-glass anti-reflective coatings for photolithography
KR100804873B1 (ko) * 1999-06-10 2008-02-20 얼라이드시그날 인코퍼레이티드 포토리소그래피용 sog 반사방지 코팅
JP4694686B2 (ja) * 2000-08-31 2011-06-08 東京応化工業株式会社 半導体素子製造方法
TW591341B (en) 2001-09-26 2004-06-11 Shipley Co Llc Coating compositions for use with an overcoated photoresist
KR20040066124A (ko) * 2001-11-15 2004-07-23 허니웰 인터내셔널 인코포레이티드 포토리소그라피용 스핀온 반사 방지 피막
US20030215736A1 (en) * 2002-01-09 2003-11-20 Oberlander Joseph E. Negative-working photoimageable bottom antireflective coating
US7070914B2 (en) * 2002-01-09 2006-07-04 Az Electronic Materials Usa Corp. Process for producing an image using a first minimum bottom antireflective coating composition
US8012670B2 (en) 2002-04-11 2011-09-06 Rohm And Haas Electronic Materials Llc Photoresist systems
US7265431B2 (en) * 2002-05-17 2007-09-04 Intel Corporation Imageable bottom anti-reflective coating for high resolution lithography
US7108958B2 (en) 2002-07-31 2006-09-19 Brewer Science Inc. Photosensitive bottom anti-reflective coatings
AU2002357645A1 (en) * 2002-09-20 2004-04-08 Honeywell International, Inc. Interlayer adhesion promoter for low k materials
US20040067437A1 (en) * 2002-10-06 2004-04-08 Shipley Company, L.L.C. Coating compositions for use with an overcoated photoresist
JP2004206082A (ja) * 2002-11-20 2004-07-22 Rohm & Haas Electronic Materials Llc 多層フォトレジスト系
KR20040044368A (ko) * 2002-11-20 2004-05-28 쉬플리 캄파니, 엘.엘.씨. 다층 포토레지스트 시스템
JP4133399B2 (ja) * 2003-02-10 2008-08-13 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
US20040242759A1 (en) * 2003-05-30 2004-12-02 Bhave Mandar R. Bottom anti-reflective coating compositions comprising silicon containing polymers to improve adhesion towards photoresists
US7364832B2 (en) * 2003-06-11 2008-04-29 Brewer Science Inc. Wet developable hard mask in conjunction with thin photoresist for micro photolithography
US7384727B2 (en) * 2003-06-26 2008-06-10 Micron Technology, Inc. Semiconductor processing patterning methods
TWI358612B (en) 2003-08-28 2012-02-21 Nissan Chemical Ind Ltd Polyamic acid-containing composition for forming a
US7115532B2 (en) 2003-09-05 2006-10-03 Micron Technolgoy, Inc. Methods of forming patterned photoresist layers over semiconductor substrates
US7364835B2 (en) * 2003-10-15 2008-04-29 Brewer Science Inc. Developer-soluble materials and methods of using the same in via-first dual damascene applications
US6969677B2 (en) * 2003-10-20 2005-11-29 Micron Technology, Inc. Methods of forming conductive metal silicides by reaction of metal with silicon
US7026243B2 (en) * 2003-10-20 2006-04-11 Micron Technology, Inc. Methods of forming conductive material silicides by reaction of metal with silicon
US8053159B2 (en) 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
JP4769455B2 (ja) * 2003-12-30 2011-09-07 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. コーティング組成物
US20050214674A1 (en) * 2004-03-25 2005-09-29 Yu Sui Positive-working photoimageable bottom antireflective coating
US7153769B2 (en) * 2004-04-08 2006-12-26 Micron Technology, Inc. Methods of forming a reaction product and methods of forming a conductive metal silicide by reaction of metal with silicon
US20070207406A1 (en) * 2004-04-29 2007-09-06 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
US20050255410A1 (en) * 2004-04-29 2005-11-17 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
KR101168249B1 (ko) * 2004-05-14 2012-07-30 닛산 가가쿠 고교 가부시키 가이샤 비닐에테르 화합물을 포함하는 반사방지막 형성 조성물
JP4157497B2 (ja) * 2004-06-11 2008-10-01 株式会社東芝 感光性組成物およびそれを用いたパターン形成方法
US7119031B2 (en) * 2004-06-28 2006-10-10 Micron Technology, Inc. Methods of forming patterned photoresist layers over semiconductor substrates
US7241705B2 (en) 2004-09-01 2007-07-10 Micron Technology, Inc. Methods of forming conductive contacts to source/drain regions and methods of forming local interconnects
US20060255315A1 (en) * 2004-11-19 2006-11-16 Yellowaga Deborah L Selective removal chemistries for semiconductor applications, methods of production and uses thereof
KR100676885B1 (ko) * 2004-12-02 2007-02-23 주식회사 하이닉스반도체 상부 반사방지막 중합체, 이의 제조방법 및 이를 함유하는상부 반사방지막 조성물
US7816071B2 (en) * 2005-02-10 2010-10-19 Az Electronic Materials Usa Corp. Process of imaging a photoresist with multiple antireflective coatings
TWI392969B (zh) * 2005-03-22 2013-04-11 Fujifilm Corp 正型光阻組成物及使用它之圖案形成方法
US7906270B2 (en) * 2005-03-23 2011-03-15 Asml Netherlands B.V. Reduced pitch multiple exposure process
US7981595B2 (en) * 2005-03-23 2011-07-19 Asml Netherlands B.V. Reduced pitch multiple exposure process
KR100662542B1 (ko) * 2005-06-17 2006-12-28 제일모직주식회사 반사방지 하드마스크 조성물 및 이를 이용하여 기판 상에패턴화된 재료 형상을 형성시키는 방법
EP1742108B1 (de) * 2005-07-05 2015-10-28 Rohm and Haas Electronic Materials, L.L.C. Beschichtungszusammensetzungen zur Verwendung mit einem beschichteten Fotolack
JP4861767B2 (ja) 2005-07-26 2012-01-25 富士フイルム株式会社 ポジ型レジスト組成物およびそれを用いたパターン形成方法
US20070105040A1 (en) * 2005-11-10 2007-05-10 Toukhy Medhat A Developable undercoating composition for thick photoresist layers
US7919222B2 (en) * 2006-01-29 2011-04-05 Rohm And Haas Electronics Materials Llc Coating compositions for use with an overcoated photoresist
US7615329B2 (en) * 2006-03-02 2009-11-10 Intel Corporation Branching self-assembling photoresist with decomposable backbone
US20070231736A1 (en) * 2006-03-28 2007-10-04 Chen Kuang-Jung J Bottom antireflective coating composition and method for use thereof
JP5112733B2 (ja) * 2006-04-11 2013-01-09 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. フォトリソグラフィ用コーティング組成物
US7563563B2 (en) * 2006-04-18 2009-07-21 International Business Machines Corporation Wet developable bottom antireflective coating composition and method for use thereof
US7626185B2 (en) * 2006-08-11 2009-12-01 Battelle Memorial Institute Patterning compositions, masks, and methods
TWI305961B (en) * 2006-08-14 2009-02-01 Ind Tech Res Inst Method of fabricating a electrical device
US7914974B2 (en) 2006-08-18 2011-03-29 Brewer Science Inc. Anti-reflective imaging layer for multiple patterning process
US7862985B2 (en) * 2006-09-22 2011-01-04 Tokyo Electron Limited Method for double patterning a developable anti-reflective coating
US20080073321A1 (en) * 2006-09-22 2008-03-27 Tokyo Electron Limited Method of patterning an anti-reflective coating by partial etching
US7858293B2 (en) * 2006-09-22 2010-12-28 Tokyo Electron Limited Method for double imaging a developable anti-reflective coating
US7811747B2 (en) * 2006-09-22 2010-10-12 Tokyo Electron Limited Method of patterning an anti-reflective coating by partial developing
US7883835B2 (en) * 2006-09-22 2011-02-08 Tokyo Electron Limited Method for double patterning a thin film
EP1906249A3 (de) * 2006-09-26 2008-12-24 Rohm and Haas Electronic Materials, L.L.C. Antireflexbeschichtungszusammensetzungen für Photolithographie
EP2085822A4 (de) * 2006-10-12 2011-03-16 Nissan Chemical Ind Ltd Prozess zur halbleiterbauelementeproduktion unter verwendung eines durch fotovernetzung ausgehärteten unterresistfilms
CN101541880B (zh) * 2006-11-28 2011-05-04 日产化学工业株式会社 含有含芳香族稠环的树脂的形成光刻用抗蚀剂下层膜的组合物
KR100777927B1 (ko) * 2006-12-05 2007-11-21 동부일렉트로닉스 주식회사 반도체 소자의 미세패턴 형성방법
US7767386B2 (en) * 2007-01-15 2010-08-03 Tokyo Electron Limited Method of patterning an organic planarization layer
US7932017B2 (en) * 2007-01-15 2011-04-26 Tokyo Electron Limited Method of double patterning a thin film using a developable anti-reflective coating and a developable organic planarization layer
US8642246B2 (en) * 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
US7432191B1 (en) * 2007-03-30 2008-10-07 Tokyo Electron Limited Method of forming a dual damascene structure utilizing a developable anti-reflective coating
KR100960463B1 (ko) * 2007-08-09 2010-05-28 주식회사 하이닉스반도체 반사방지막용 중합체, 이를 포함하는 반사방지막 조성물 및이를 이용한 패턴 형성방법
US20090098490A1 (en) * 2007-10-16 2009-04-16 Victor Pham Radiation-Sensitive, Wet Developable Bottom Antireflective Coating Compositions and Their Applications in Semiconductor Manufacturing
US8088548B2 (en) * 2007-10-23 2012-01-03 Az Electronic Materials Usa Corp. Bottom antireflective coating compositions
US8206893B2 (en) * 2007-10-30 2012-06-26 Brewer Science Inc. Photoimageable branched polymer
KR101647158B1 (ko) 2008-01-29 2016-08-09 브레우어 사이언스 인코포레이션 다중 다크 필드 노출에 의한, 하드마스크 패턴화를 위한 온-트랙 공정
US8053368B2 (en) * 2008-03-26 2011-11-08 International Business Machines Corporation Method for removing residues from a patterned substrate
KR101697790B1 (ko) * 2008-04-23 2017-02-01 브레우어 사이언스 인코포레이션 마이크로리소그래피용 감광성 하드마스크
US20090311634A1 (en) * 2008-06-11 2009-12-17 Tokyo Electron Limited Method of double patterning using sacrificial structure
WO2010021030A1 (ja) * 2008-08-20 2010-02-25 富士通株式会社 レジスト増感膜形成用材料、半導体装置の製造方法、半導体装置、及び磁気ヘッド
US8455176B2 (en) * 2008-11-12 2013-06-04 Az Electronic Materials Usa Corp. Coating composition
US20100136477A1 (en) * 2008-12-01 2010-06-03 Ng Edward W Photosensitive Composition
US8507179B2 (en) * 2008-12-10 2013-08-13 Dow Corning Corporation Switchable antireflective coatings
CN102245723B (zh) * 2008-12-10 2014-12-17 陶氏康宁公司 可湿蚀刻的抗反射涂层
US8809482B2 (en) 2008-12-10 2014-08-19 Dow Corning Corporation Silsesquioxane resins
US9640396B2 (en) 2009-01-07 2017-05-02 Brewer Science Inc. Spin-on spacer materials for double- and triple-patterning lithography
US8182978B2 (en) 2009-02-02 2012-05-22 International Business Machines Corporation Developable bottom antireflective coating compositions especially suitable for ion implant applications
JP5719514B2 (ja) 2009-02-08 2015-05-20 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC 上塗りフォトレジストと共に使用するのに好適なコーティング組成物
JP5746824B2 (ja) * 2009-02-08 2015-07-08 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC 上塗りフォトレジストと共に使用するのに好適なコーティング組成物
JP5840954B2 (ja) * 2009-02-19 2016-01-06 ブルーワー サイエンス アイ エヌシー. 酸感応性、現像剤可溶性の下層反射防止膜
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
US8883407B2 (en) 2009-06-12 2014-11-11 Rohm And Haas Electronic Materials Llc Coating compositions suitable for use with an overcoated photoresist
US8519540B2 (en) 2009-06-16 2013-08-27 International Business Machines Corporation Self-aligned dual damascene BEOL structures with patternable low- K material and methods of forming same
US8659115B2 (en) * 2009-06-17 2014-02-25 International Business Machines Corporation Airgap-containing interconnect structure with improved patternable low-K material and method of fabricating
US8163658B2 (en) * 2009-08-24 2012-04-24 International Business Machines Corporation Multiple patterning using improved patternable low-k dielectric materials
US8202783B2 (en) 2009-09-29 2012-06-19 International Business Machines Corporation Patternable low-k dielectric interconnect structure with a graded cap layer and method of fabrication
US8632948B2 (en) * 2009-09-30 2014-01-21 Az Electronic Materials Usa Corp. Positive-working photoimageable bottom antireflective coating
US8637395B2 (en) * 2009-11-16 2014-01-28 International Business Machines Corporation Methods for photo-patternable low-k (PPLK) integration with curing after pattern transfer
US8367540B2 (en) * 2009-11-19 2013-02-05 International Business Machines Corporation Interconnect structure including a modified photoresist as a permanent interconnect dielectric and method of fabricating same
JP5286236B2 (ja) * 2009-11-30 2013-09-11 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、それを用いて形成した膜及びそれを用いたパターン形成方法
US8642252B2 (en) 2010-03-10 2014-02-04 International Business Machines Corporation Methods for fabrication of an air gap-containing interconnect structure
US8896120B2 (en) 2010-04-27 2014-11-25 International Business Machines Corporation Structures and methods for air gap integration
US8241992B2 (en) 2010-05-10 2012-08-14 International Business Machines Corporation Method for air gap interconnect integration using photo-patternable low k material
US8373271B2 (en) 2010-05-27 2013-02-12 International Business Machines Corporation Interconnect structure with an oxygen-doped SiC antireflective coating and method of fabrication
US8445181B2 (en) * 2010-06-03 2013-05-21 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
US9029062B2 (en) * 2010-06-30 2015-05-12 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and patterning process
JP5445430B2 (ja) * 2010-11-15 2014-03-19 信越化学工業株式会社 パターン形成方法
US8507191B2 (en) 2011-01-07 2013-08-13 Micron Technology, Inc. Methods of forming a patterned, silicon-enriched developable antireflective material and semiconductor device structures including the same
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
CN102629077A (zh) * 2011-06-29 2012-08-08 北京京东方光电科技有限公司 树脂介电层及其材料的制备方法、液晶面板及显示器件
US8715907B2 (en) 2011-08-10 2014-05-06 International Business Machines Corporation Developable bottom antireflective coating compositions for negative resists
JP2013083947A (ja) * 2011-09-28 2013-05-09 Jsr Corp レジスト下層膜形成用組成物及びパターン形成方法
US8697336B2 (en) * 2011-12-15 2014-04-15 Az Electronic Materials Usa Corp. Composition for forming a developable bottom antireflective coating
US8999624B2 (en) 2012-06-29 2015-04-07 International Business Machines Corporation Developable bottom antireflective coating composition and pattern forming method using thereof
JP5956370B2 (ja) * 2013-03-12 2016-07-27 信越化学工業株式会社 珪素含有下層膜材料及びパターン形成方法
WO2016167892A1 (en) 2015-04-13 2016-10-20 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
US10114288B2 (en) 2016-09-01 2018-10-30 Rohm And Haas Electronic Materials Llc Silicon-containing underlayers
US10007184B2 (en) * 2016-09-01 2018-06-26 Rohm And Haas Electronic Materials Llc Silicon-containing underlayers
US10374034B1 (en) 2018-05-21 2019-08-06 International Business Machines Corporation Undercut control in isotropic wet etch processes
CN111944090B (zh) * 2019-06-06 2023-06-23 儒芯微电子材料(上海)有限公司 一种聚合物树脂及其制备方法与应用
CN114686057B (zh) * 2020-12-28 2023-06-02 中国科学院微电子研究所 一种图形化用抗反射涂层组合物及图形化方法
CN116102939B (zh) * 2021-11-09 2023-10-03 上海新阳半导体材料股份有限公司 一种深紫外光刻用底部抗反射涂层及其制备方法和应用
CN115536776B (zh) * 2022-10-15 2023-08-29 瑞红(苏州)电子化学品股份有限公司 一种光刻胶用树脂及其制备方法及用该树脂制得的光刻胶

Family Cites Families (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
US4910122A (en) 1982-09-30 1990-03-20 Brewer Science, Inc. Anti-reflective coating
JPH0664341B2 (ja) 1983-01-24 1994-08-22 ウエスターン エレクトリック カムパニー,インコーポレーテッド 半導体デバイスの製作法
JPS59226346A (ja) 1983-06-07 1984-12-19 Fuotopori Ouka Kk プリント回路の製造方法
US4521274A (en) 1984-05-24 1985-06-04 At&T Bell Laboratories Bilevel resist
US4557797A (en) 1984-06-01 1985-12-10 Texas Instruments Incorporated Resist process using anti-reflective coating
US4863827A (en) 1986-10-20 1989-09-05 American Hoechst Corporation Postive working multi-level photoresist
DE3817012A1 (de) 1988-05-19 1989-11-30 Basf Ag Positiv und negativ arbeitende strahlungsempfindliche gemische sowie verfahren zur herstellung von reliefmustern
DE3930086A1 (de) 1989-09-09 1991-03-21 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
DE3930087A1 (de) 1989-09-09 1991-03-14 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
DE69125634T2 (de) 1990-01-30 1998-01-02 Wako Pure Chem Ind Ltd Chemisch verstärktes Photolack-Material
DE4112967A1 (de) 1991-04-20 1992-10-22 Hoechst Ag Substituierte 1-sulfonyloxy-2-pyridone, verfahren zu ihrer herstellung und ihre verwendung
DE4125260A1 (de) 1991-07-31 1993-02-04 Hoechst Ag Oligomere verbindungen mit saeurelabilen schutzgruppen und damit hergestelltes positiv arbeitendes strahlungsempfindliches gemisch
JP3000745B2 (ja) 1991-09-19 2000-01-17 富士通株式会社 レジスト組成物とレジストパターンの形成方法
US6165697A (en) * 1991-11-15 2000-12-26 Shipley Company, L.L.C. Antihalation compositions
US5294680A (en) 1992-07-24 1994-03-15 International Business Machines Corporation Polymeric dyes for antireflective coatings
DE4302681A1 (de) 1993-02-01 1994-08-04 Hoechst Ag Sulfonsäureester, damit hergestellte strahlungsempfindliche Gemische und deren Verwendung
JP2847479B2 (ja) * 1994-03-28 1999-01-20 和光純薬工業株式会社 遠紫外線用レジスト組成物及びこれを用いた微細パターン形成方法
DE69511141T2 (de) 1994-03-28 2000-04-20 Wako Pure Chem Ind Ltd Resistzusammensetzung für tiefe Ultraviolettbelichtung
US5581730A (en) 1994-07-06 1996-12-03 Advanced Micro Devices, Inc. Condition detector and prioritizer with associativity determination logic
US5635333A (en) 1994-12-28 1997-06-03 Shipley Company, L.L.C. Antireflective coating process
JP3579946B2 (ja) 1995-02-13 2004-10-20 Jsr株式会社 化学増幅型感放射線性樹脂組成物
JPH08286384A (ja) * 1995-04-14 1996-11-01 Hitachi Ltd パタン形成方法及びそれに用いるフォトレジスト材料
US5731386A (en) 1995-05-09 1998-03-24 Shipley Company, L.L.C. Polymer for positive acid catalyzed resists
US5693691A (en) * 1995-08-21 1997-12-02 Brewer Science, Inc. Thermosetting anti-reflective coatings compositions
TW477913B (en) 1995-11-02 2002-03-01 Shinetsu Chemical Co Sulfonium salts and chemically amplified positive resist compositions
CN1198181C (zh) 1996-03-07 2005-04-20 住友电木株式会社 包括具有酸不稳定侧基的多环聚合物的光刻胶组合物
US5843624A (en) 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
US5886102A (en) 1996-06-11 1999-03-23 Shipley Company, L.L.C. Antireflective coating compositions
US5652297A (en) 1996-08-16 1997-07-29 Hoechst Celanese Corporation Aqueous antireflective coatings for photoresist compositions
US5763135A (en) 1996-09-30 1998-06-09 Clariant Finance (Bvi) Limited Light sensitive composition containing an arylhydrazo dye
KR100265597B1 (ko) 1996-12-30 2000-09-15 김영환 Arf 감광막 수지 및 그 제조방법
US5939236A (en) 1997-02-07 1999-08-17 Shipley Company, L.L.C. Antireflective coating compositions comprising photoacid generators
JP3031287B2 (ja) 1997-04-30 2000-04-10 日本電気株式会社 反射防止膜材料
US5981145A (en) 1997-04-30 1999-11-09 Clariant Finance (Bvi) Limited Light absorbing polymers
JPH1172925A (ja) * 1997-07-03 1999-03-16 Toshiba Corp 下層膜用組成物およびこれを用いたパターン形成方法
US6054254A (en) 1997-07-03 2000-04-25 Kabushiki Kaisha Toshiba Composition for underlying film and method of forming a pattern using the film
CN1182440C (zh) 1997-09-30 2004-12-29 西门子公司 用于深紫外线光刻的层状结构以及形成光刻层状结构的方法
US5882996A (en) 1997-10-14 1999-03-16 Industrial Technology Research Institute Method of self-aligned dual damascene patterning using developer soluble arc interstitial layer
US5935760A (en) 1997-10-20 1999-08-10 Brewer Science Inc. Thermosetting polyester anti-reflective coatings for multilayer photoresist processes
US6110641A (en) 1997-12-04 2000-08-29 Shipley Company, L.L.C. Radiation sensitive composition containing novel dye
US6242161B1 (en) 1998-05-29 2001-06-05 Jsr Corporation Acrylic copolymer and reflection-preventing film-forming composition containing the same
CN1273646A (zh) * 1998-07-10 2000-11-15 克拉瑞特国际有限公司 底部抗反射涂层组合物和用于该组合物的新型聚合物染料
US6114085A (en) 1998-11-18 2000-09-05 Clariant Finance (Bvi) Limited Antireflective composition for a deep ultraviolet photoresist
JP4284728B2 (ja) 1998-12-07 2009-06-24 Jsr株式会社 反射防止膜、反射防止膜を含む積層体および反射防止膜の製造方法
US6251562B1 (en) 1998-12-23 2001-06-26 International Business Machines Corporation Antireflective polymer and method of use
JP4096138B2 (ja) * 1999-04-12 2008-06-04 Jsr株式会社 レジスト下層膜用組成物の製造方法
JP2001066780A (ja) * 1999-06-21 2001-03-16 Matsushita Electric Ind Co Ltd パターン形成方法
US6110653A (en) 1999-07-26 2000-08-29 International Business Machines Corporation Acid sensitive ARC and method of use
US6187506B1 (en) 1999-08-05 2001-02-13 Clariant Finance (Bvi) Limited Antireflective coating for photoresist compositions
KR100359862B1 (ko) 1999-12-23 2002-11-09 주식회사 하이닉스반도체 난반사 방지막용 중합체와 그 제조방법
JP2002169299A (ja) * 2000-09-21 2002-06-14 Tokuyama Corp フォトレジスト現像液
JP4266194B2 (ja) * 2004-09-16 2009-05-20 株式会社東芝 耐熱鋼、耐熱鋼の熱処理方法および高温用蒸気タービンロータ

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