DE60312713D1 - Amorphe legierungen für magneteinrichtungen - Google Patents

Amorphe legierungen für magneteinrichtungen

Info

Publication number
DE60312713D1
DE60312713D1 DE60312713T DE60312713T DE60312713D1 DE 60312713 D1 DE60312713 D1 DE 60312713D1 DE 60312713 T DE60312713 T DE 60312713T DE 60312713 T DE60312713 T DE 60312713T DE 60312713 D1 DE60312713 D1 DE 60312713D1
Authority
DE
Germany
Prior art keywords
alloys
amorphe
amorphous layer
present
mtj stack
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60312713T
Other languages
English (en)
Other versions
DE60312713T2 (de
Inventor
Jon M Slaughter
Renu W Dave
Srinivas V Pietambaram
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of DE60312713D1 publication Critical patent/DE60312713D1/de
Application granted granted Critical
Publication of DE60312713T2 publication Critical patent/DE60312713T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00Arrangements or instruments for measuring magnetic variables
    • G01R33/02Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09Magnetoresistive devices
    • G01R33/093Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/33Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/33Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3909Arrangements using a magnetic tunnel junction
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00Thin magnetic films, e.g. of one-domain structure
    • H01F10/32Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/3204Exchange coupling of amorphous multilayers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00Thin magnetic films, e.g. of one-domain structure
    • H01F10/32Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00Galvanomagnetic devices
    • H10N50/80Constructional details
    • H10N50/85Magnetic active materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00Thin magnetic films, e.g. of one-domain structure
    • H01F10/32Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3272Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12431Foil or filament smaller than 6 mils
DE60312713T 2002-08-30 2003-07-25 Amorphe legierungen für magneteinrichtungen Expired - Fee Related DE60312713T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US232164 2002-08-30
US10/232,164 US6831312B2 (en) 2002-08-30 2002-08-30 Amorphous alloys for magnetic devices
PCT/US2003/023508 WO2004021372A1 (en) 2002-08-30 2003-07-25 Amorphous alloys for magnetic devices

Publications (2)

Publication Number Publication Date
DE60312713D1 true DE60312713D1 (de) 2007-05-03
DE60312713T2 DE60312713T2 (de) 2007-07-12

Family

ID=31976942

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60312713T Expired - Fee Related DE60312713T2 (de) 2002-08-30 2003-07-25 Amorphe legierungen für magneteinrichtungen

Country Status (8)

Country Link
US (2) US6831312B2 (de)
EP (1) EP1547101B1 (de)
JP (1) JP2005539376A (de)
CN (1) CN100339916C (de)
AT (1) ATE357732T1 (de)
AU (1) AU2003256913A1 (de)
DE (1) DE60312713T2 (de)
WO (1) WO2004021372A1 (de)

Families Citing this family (94)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4032695B2 (ja) * 2001-10-23 2008-01-16 ソニー株式会社 磁気メモリ装置
US6885073B2 (en) * 2003-04-02 2005-04-26 Micron Technology, Inc. Method and apparatus providing MRAM devices with fine tuned offset
KR100552682B1 (ko) * 2003-06-02 2006-02-20 삼성전자주식회사 고밀도 자기저항 메모리 및 그 제조방법
US7001680B2 (en) * 2003-07-29 2006-02-21 Hitachi Global Storage Tech Nl Low resistance magnetic tunnel junction structure
US7144640B2 (en) * 2003-08-01 2006-12-05 Agency For Science, Technology And Research Tilted media for hard disk drives and magnetic data storage devices
US7884403B2 (en) * 2004-03-12 2011-02-08 Japan Science And Technology Agency Magnetic tunnel junction device and memory device including the same
US7611912B2 (en) * 2004-06-30 2009-11-03 Headway Technologies, Inc. Underlayer for high performance magnetic tunneling junction MRAM
US7098495B2 (en) * 2004-07-26 2006-08-29 Freescale Semiconducor, Inc. Magnetic tunnel junction element structures and methods for fabricating the same
JP4292128B2 (ja) * 2004-09-07 2009-07-08 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造方法
TWI283477B (en) * 2004-11-16 2007-07-01 Ind Tech Res Inst Magnetic random access memory with lower switching field
US6992910B1 (en) 2004-11-18 2006-01-31 Maglabs, Inc. Magnetic random access memory with three or more stacked toggle memory cells and method for writing a selected cell
US6937497B1 (en) * 2004-11-18 2005-08-30 Maglabs, Inc. Magnetic random access memory with stacked toggle memory cells
JP4951858B2 (ja) * 2005-01-12 2012-06-13 ソニー株式会社 メモリ
US7211447B2 (en) * 2005-03-15 2007-05-01 Headway Technologies, Inc. Structure and method to fabricate high performance MTJ devices for MRAM applications
US7208807B2 (en) * 2005-03-15 2007-04-24 Headway Technologies, Inc. Structure and method to fabricate high performance MTJ devices for MRAM applications
US7369376B2 (en) * 2005-03-15 2008-05-06 Headway Technologies, Inc. Amorphous layers in a magnetic tunnel junction device
JP2006319259A (ja) * 2005-05-16 2006-11-24 Fujitsu Ltd 強磁性トンネル接合素子、これを用いた磁気ヘッド、磁気記録装置、および磁気メモリ装置
US7497007B2 (en) 2005-07-14 2009-03-03 Headway Technologies, Inc. Process of manufacturing a TMR device
JP5096702B2 (ja) * 2005-07-28 2012-12-12 株式会社日立製作所 磁気抵抗効果素子及びそれを搭載した不揮発性磁気メモリ
US7333306B2 (en) * 2005-08-23 2008-02-19 Headway Technologies, Inc. Magnetoresistive spin valve sensor with tri-layer free layer
JP2007095750A (ja) * 2005-09-27 2007-04-12 Canon Anelva Corp 磁気抵抗効果素子
US8582252B2 (en) * 2005-11-02 2013-11-12 Seagate Technology Llc Magnetic layer with grain refining agent
US7599157B2 (en) * 2006-02-16 2009-10-06 Hitachi Global Storage Technologies Netherlands B.V. Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with high-resistivity amorphous ferromagnetic layers
JP2007294737A (ja) * 2006-04-26 2007-11-08 Hitachi Ltd トンネル磁気抵抗効果素子、それを用いた磁気メモリセル及びランダムアクセスメモリ
JP2007305882A (ja) * 2006-05-12 2007-11-22 Sony Corp 記憶素子及びメモリ
US7535069B2 (en) * 2006-06-14 2009-05-19 International Business Machines Corporation Magnetic tunnel junction with enhanced magnetic switching characteristics
FR2904724B1 (fr) * 2006-08-03 2011-03-04 Commissariat Energie Atomique Dispositif magnetique en couches minces a forte polarisation en spin perpendiculaire au plan des couches, jonction tunnel magnetique et vanne de spin mettant en oeuvre un tel dispositif
KR100744419B1 (ko) 2006-08-03 2007-07-30 동부일렉트로닉스 주식회사 반도체 소자 및 반도체 소자의 제조 방법
US7672093B2 (en) * 2006-10-17 2010-03-02 Magic Technologies, Inc. Hafnium doped cap and free layer for MRAM device
US7672089B2 (en) * 2006-12-15 2010-03-02 Hitachi Global Storage Technologies Netherlands B.V. Current-perpendicular-to-plane sensor with dual keeper layers
US7598579B2 (en) * 2007-01-30 2009-10-06 Magic Technologies, Inc. Magnetic tunnel junction (MTJ) to reduce spin transfer magnetization switching current
US7663131B2 (en) 2007-03-08 2010-02-16 Magic Technologies, Inc. SyAF structure to fabricate Mbit MTJ MRAM
US7480173B2 (en) * 2007-03-13 2009-01-20 Magic Technologies, Inc. Spin transfer MRAM device with novel magnetic free layer
US8058697B2 (en) 2007-03-26 2011-11-15 Magic Technologies, Inc. Spin transfer MRAM device with novel magnetic synthetic free layer
US7830641B2 (en) * 2007-04-17 2010-11-09 Hitachi Global Storage Technologies Netherlands B.V. Tunneling magnetoresistive (TMR) sensor with a Co-Fe-B free layer having a negative saturation magnetostriction
US7573736B2 (en) * 2007-05-22 2009-08-11 Taiwan Semiconductor Manufacturing Company Spin torque transfer MRAM device
US7602033B2 (en) * 2007-05-29 2009-10-13 Headway Technologies, Inc. Low resistance tunneling magnetoresistive sensor with composite inner pinned layer
US20090046397A1 (en) * 2007-08-15 2009-02-19 Freescale Semiconductor, Inc. Methods and apparatus for a synthetic anti-ferromagnet structure with improved thermal stability
US8497559B2 (en) * 2007-10-10 2013-07-30 Magic Technologies, Inc. MRAM with means of controlling magnetic anisotropy
US20090168271A1 (en) * 2007-12-27 2009-07-02 Daniele Mauri Dual-layer free layer in a tunneling magnetoresistance (tmr) element having different magnetic thicknesses
US8659852B2 (en) 2008-04-21 2014-02-25 Seagate Technology Llc Write-once magentic junction memory array
US7855911B2 (en) 2008-05-23 2010-12-21 Seagate Technology Llc Reconfigurable magnetic logic device using spin torque
US7852663B2 (en) 2008-05-23 2010-12-14 Seagate Technology Llc Nonvolatile programmable logic gates and adders
FR2932315B1 (fr) * 2008-06-09 2010-06-04 Commissariat Energie Atomique Element magnetique tricouches, procede pour sa realisation, capteur de champ magnetique, memoire magnetique et porte logique magnetique mettant en oeuvre un tel element
US7881098B2 (en) 2008-08-26 2011-02-01 Seagate Technology Llc Memory with separate read and write paths
US7985994B2 (en) 2008-09-29 2011-07-26 Seagate Technology Llc Flux-closed STRAM with electronically reflective insulative spacer
US8031445B2 (en) * 2008-10-08 2011-10-04 Headway Technologies, Inc. Low noise magneto-resistive sensor utilizing magnetic noise cancellation
US8169810B2 (en) 2008-10-08 2012-05-01 Seagate Technology Llc Magnetic memory with asymmetric energy barrier
US8039913B2 (en) 2008-10-09 2011-10-18 Seagate Technology Llc Magnetic stack with laminated layer
US8089132B2 (en) 2008-10-09 2012-01-03 Seagate Technology Llc Magnetic memory with phonon glass electron crystal material
US7880209B2 (en) * 2008-10-09 2011-02-01 Seagate Technology Llc MRAM cells including coupled free ferromagnetic layers for stabilization
US8495118B2 (en) * 2008-10-30 2013-07-23 Seagate Technology Llc Tunable random bit generator with magnetic tunnel junction
US8045366B2 (en) 2008-11-05 2011-10-25 Seagate Technology Llc STRAM with composite free magnetic element
US8043732B2 (en) 2008-11-11 2011-10-25 Seagate Technology Llc Memory cell with radial barrier
US7826181B2 (en) 2008-11-12 2010-11-02 Seagate Technology Llc Magnetic memory with porous non-conductive current confinement layer
US8289756B2 (en) 2008-11-25 2012-10-16 Seagate Technology Llc Non volatile memory including stabilizing structures
JP5274998B2 (ja) * 2008-12-01 2013-08-28 ショウワデンコウ エイチディ シンガポール ピーティイー リミテッド 磁気記録媒体及びその製造方法、並びに磁気記録再生装置
US20100148167A1 (en) * 2008-12-12 2010-06-17 Everspin Technologies, Inc. Magnetic tunnel junction stack
US7826259B2 (en) 2009-01-29 2010-11-02 Seagate Technology Llc Staggered STRAM cell
US7999338B2 (en) 2009-07-13 2011-08-16 Seagate Technology Llc Magnetic stack having reference layers with orthogonal magnetization orientation directions
US8218271B2 (en) * 2009-07-22 2012-07-10 Hitachi Global Storage Technologies Netherlands B.V. TMR sensor with a multilayered reference layer
US8611055B1 (en) 2009-07-31 2013-12-17 Western Digital (Fremont), Llc Magnetic etch-stop layer for magnetoresistive read heads
US8243401B2 (en) 2009-10-02 2012-08-14 Hitachi Global Storage Technologies Netherlands B.V. Tunneling magnetoresistance read sensor with dual sense layers
US9175358B2 (en) * 2009-11-11 2015-11-03 Carbo-UA Limited Compositions and processes for sugar treatment
US8063460B2 (en) * 2009-12-18 2011-11-22 Intel Corporation Spin torque magnetic integrated circuits and devices therefor
JP2011134976A (ja) * 2009-12-25 2011-07-07 Renesas Electronics Corp 半導体装置
US8508221B2 (en) 2010-08-30 2013-08-13 Everspin Technologies, Inc. Two-axis magnetic field sensor having reduced compensation angle for zero offset
JP5123365B2 (ja) * 2010-09-16 2013-01-23 株式会社東芝 磁気抵抗素子及び磁気メモリ
JP5232206B2 (ja) * 2010-09-21 2013-07-10 株式会社東芝 磁気抵抗素子及び磁気ランダムアクセスメモリ
US8867177B2 (en) 2010-10-28 2014-10-21 HGST Netherlands B.V. Magnetic sensor having improved resistance to thermal stress induced instability
US8470462B2 (en) * 2010-11-30 2013-06-25 Magic Technologies, Inc. Structure and method for enhancing interfacial perpendicular anisotropy in CoFe(B)/MgO/CoFe(B) magnetic tunnel junctions
US8686484B2 (en) 2011-06-10 2014-04-01 Everspin Technologies, Inc. Spin-torque magnetoresistive memory element and method of fabricating same
US9214624B2 (en) * 2012-07-27 2015-12-15 Qualcomm Incorporated Amorphous spacerlattice spacer for perpendicular MTJs
JP2014060297A (ja) * 2012-09-18 2014-04-03 Toshiba Corp 磁気抵抗効果素子
JP5987613B2 (ja) 2012-09-28 2016-09-07 ソニー株式会社 記憶素子、記憶装置、磁気ヘッド
US8981505B2 (en) * 2013-01-11 2015-03-17 Headway Technologies, Inc. Mg discontinuous insertion layer for improving MTJ shunt
US9130155B2 (en) 2013-03-15 2015-09-08 Samsung Electronics Co., Ltd. Magnetic junctions having insertion layers and magnetic memories using the magnetic junctions
KR102105078B1 (ko) * 2013-05-30 2020-04-27 삼성전자주식회사 자기 기억 소자
US20150311430A1 (en) * 2014-04-28 2015-10-29 Seagate Technology Llc Magnetoresistive sensor
US9230565B1 (en) * 2014-06-24 2016-01-05 Western Digital (Fremont), Llc Magnetic shield for magnetic recording head
US9196272B1 (en) 2014-10-27 2015-11-24 Seagate Technology Llc Sensor structure having increased thermal stability
KR102466342B1 (ko) 2015-06-11 2022-11-15 삼성전자주식회사 자기 메모리 소자
US11245069B2 (en) * 2015-07-14 2022-02-08 Applied Materials, Inc. Methods for forming structures with desired crystallinity for MRAM applications
US9489998B1 (en) * 2015-11-17 2016-11-08 Samsung Electronics Co., Ltd. Magnetic junctions having a magnetoelastic free layer programmable using spin transfer torque
US9780299B2 (en) * 2015-11-23 2017-10-03 Headway Technologies, Inc. Multilayer structure for reducing film roughness in magnetic devices
EP3933948A1 (de) 2015-12-10 2022-01-05 Everspin Technologies, Inc. Magnetoresistiver stapel, seed-region dafür und verfahren zur herstellung davon
US10483320B2 (en) 2015-12-10 2019-11-19 Everspin Technologies, Inc. Magnetoresistive stack with seed region and method of manufacturing the same
US10361361B2 (en) * 2016-04-08 2019-07-23 International Business Machines Corporation Thin reference layer for STT MRAM
US10255935B2 (en) 2017-07-21 2019-04-09 Applied Materials, Inc. Magnetic tunnel junctions suitable for high temperature thermal processing
US10431275B2 (en) 2018-03-02 2019-10-01 Samsung Electronics Co., Ltd. Method and system for providing magnetic junctions having hybrid oxide and noble metal capping layers
US10475986B1 (en) * 2018-04-19 2019-11-12 Everspin Technologies, Inc. Magnetoresistive stacks and methods therefor
US11456411B2 (en) * 2019-07-02 2022-09-27 HeFeChip Corporation Limited Method for fabricating magnetic tunneling junction element with a composite capping layer
WO2021011144A1 (en) * 2019-07-16 2021-01-21 Applied Materials, Inc. Magnetic tunnel junction stack with data retention
US11730063B2 (en) * 2019-12-17 2023-08-15 Tdk Corporation Magnetoresistive effect element including a Heusler alloy layer with a crystal region and an amorphous region

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02288209A (ja) 1989-04-28 1990-11-28 Amorufuasu Denshi Device Kenkyusho:Kk 多層磁性薄膜
US5285339A (en) 1992-02-28 1994-02-08 International Business Machines Corporation Magnetoresistive read transducer having improved bias profile
JPH08510095A (ja) * 1994-02-21 1996-10-22 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 磁性体の磁化方向を部分的に変える方法及び装置
JPH08287422A (ja) 1995-04-07 1996-11-01 Alps Electric Co Ltd 磁気抵抗効果型ヘッド
US5909345A (en) * 1996-02-22 1999-06-01 Matsushita Electric Industrial Co., Ltd. Magnetoresistive device and magnetoresistive head
JPH1041132A (ja) 1996-07-18 1998-02-13 Sanyo Electric Co Ltd 磁気抵抗効果膜
US6249406B1 (en) 1996-09-23 2001-06-19 International Business Machines Corporation Magnetoresistive sensor with a soft adjacent layer having high magnetization, high resistivity, low intrinsic anisotropy and near zero magnetostriction
US5861328A (en) 1996-10-07 1999-01-19 Motorola, Inc. Method of fabricating GMR devices
JPH10221736A (ja) * 1996-12-04 1998-08-21 Ritsuku:Kk シャッター装置およびカメラ装置
JP3325478B2 (ja) * 1996-12-27 2002-09-17 ワイケイケイ株式会社 磁気抵抗効果素子および磁気検出器並びにその使用方法
US5768181A (en) 1997-04-07 1998-06-16 Motorola, Inc. Magnetic device having multi-layer with insulating and conductive layers
US5966012A (en) * 1997-10-07 1999-10-12 International Business Machines Corporation Magnetic tunnel junction device with improved fixed and free ferromagnetic layers
JPH11353868A (ja) * 1998-06-09 1999-12-24 Canon Inc 磁性薄膜メモリ素子およびその製造方法および製造装置
JP3234814B2 (ja) * 1998-06-30 2001-12-04 株式会社東芝 磁気抵抗効果素子、磁気ヘッド、磁気ヘッドアセンブリ及び磁気記録装置
US5940319A (en) 1998-08-31 1999-08-17 Motorola, Inc. Magnetic random access memory and fabricating method thereof
JP2000113418A (ja) * 1998-10-01 2000-04-21 Hitachi Ltd スピンバルブ効果に基づく磁気抵抗効果型ヘッド及びそれを用いた磁気記録再生装置
US6567246B1 (en) * 1999-03-02 2003-05-20 Matsushita Electric Industrial Co., Ltd. Magnetoresistance effect element and method for producing the same, and magnetoresistance effect type head, magnetic recording apparatus, and magnetoresistance effect memory element
JP2001007420A (ja) * 1999-06-17 2001-01-12 Sony Corp 磁気抵抗効果膜とこれを用いた磁気読取りセンサ
JP3589346B2 (ja) * 1999-06-17 2004-11-17 松下電器産業株式会社 磁気抵抗効果素子および磁気抵抗効果記憶素子
US6292389B1 (en) 1999-07-19 2001-09-18 Motorola, Inc. Magnetic element with improved field response and fabricating method thereof
JP2001068760A (ja) 1999-08-31 2001-03-16 Hitachi Ltd 強磁性トンネル接合素子
US6611405B1 (en) * 1999-09-16 2003-08-26 Kabushiki Kaisha Toshiba Magnetoresistive element and magnetic memory device
US6205052B1 (en) * 1999-10-21 2001-03-20 Motorola, Inc. Magnetic element with improved field response and fabricating method thereof
US6317299B1 (en) * 2000-02-17 2001-11-13 International Business Machines Corporation Seed layer for improving pinning field spin valve sensor
US6211090B1 (en) 2000-03-21 2001-04-03 Motorola, Inc. Method of fabricating flux concentrating layer for use with magnetoresistive random access memories
US6636398B2 (en) 2000-06-02 2003-10-21 Tdk Corporation Magnetoresistive effect sensor, thin-film magnetic head with the sensor, manufacturing method of magnetoresistive sensor and manufacturing method of thin-film magnetic head
JP4309075B2 (ja) * 2000-07-27 2009-08-05 株式会社東芝 磁気記憶装置
JP2002050011A (ja) * 2000-08-03 2002-02-15 Nec Corp 磁気抵抗効果素子、磁気抵抗効果ヘッド、磁気抵抗変換システム及び磁気記録システム
JP4693292B2 (ja) * 2000-09-11 2011-06-01 株式会社東芝 強磁性トンネル接合素子およびその製造方法
US6487110B2 (en) * 2000-09-27 2002-11-26 Canon Kabushiki Kaisha Nonvolatile solid-state memory device using magnetoresistive effect and recording and reproducing method of the same
JP2002172370A (ja) * 2000-12-05 2002-06-18 Canon Inc ドライアイス洗浄方法及びドライアイス洗浄装置、ドライアイス洗浄による部品又はユニット
JP2003060172A (ja) * 2001-08-20 2003-02-28 Sony Corp 磁気記憶素子
US6430084B1 (en) 2001-08-27 2002-08-06 Motorola, Inc. Magnetic random access memory having digit lines and bit lines with a ferromagnetic cladding layer
WO2003036734A2 (en) * 2001-10-12 2003-05-01 Sony Corp Magnetoresistance effect element, magetic memory element, magnetic memory device, and their manufacturing method

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DE60312713T2 (de) 2007-07-12
CN100339916C (zh) 2007-09-26
EP1547101A1 (de) 2005-06-29
ATE357732T1 (de) 2007-04-15
JP2005539376A (ja) 2005-12-22
CN1679122A (zh) 2005-10-05
US7067331B2 (en) 2006-06-27
EP1547101B1 (de) 2007-03-21
US20050118458A1 (en) 2005-06-02
AU2003256913A1 (en) 2004-03-19
US6831312B2 (en) 2004-12-14
WO2004021372A1 (en) 2004-03-11

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