DE60305067D1 - Verfahren zur herstellung einer für dissoziation ausgelegten belasteten struktur - Google Patents

Verfahren zur herstellung einer für dissoziation ausgelegten belasteten struktur

Info

Publication number
DE60305067D1
DE60305067D1 DE60305067T DE60305067T DE60305067D1 DE 60305067 D1 DE60305067 D1 DE 60305067D1 DE 60305067 T DE60305067 T DE 60305067T DE 60305067 T DE60305067 T DE 60305067T DE 60305067 D1 DE60305067 D1 DE 60305067D1
Authority
DE
Germany
Prior art keywords
substrates
assembling
substrate
faces
preform
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60305067T
Other languages
English (en)
Other versions
DE60305067T2 (de
Inventor
Franck Fournel
Hubert Moriceau
Christelle Lagahe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of DE60305067D1 publication Critical patent/DE60305067D1/de
Application granted granted Critical
Publication of DE60305067T2 publication Critical patent/DE60305067T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
DE60305067T 2002-12-09 2003-12-08 Verfahren zur herstellung einer für dissoziation ausgelegten belasteten struktur Expired - Lifetime DE60305067T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0215550A FR2848336B1 (fr) 2002-12-09 2002-12-09 Procede de realisation d'une structure contrainte destinee a etre dissociee
FR0215550 2002-12-09
PCT/FR2003/003622 WO2004064146A1 (fr) 2002-12-09 2003-12-08 Procede de realisation d'une structure contrainte destinee a etre dissociee

Publications (2)

Publication Number Publication Date
DE60305067D1 true DE60305067D1 (de) 2006-06-08
DE60305067T2 DE60305067T2 (de) 2006-12-07

Family

ID=32320122

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60305067T Expired - Lifetime DE60305067T2 (de) 2002-12-09 2003-12-08 Verfahren zur herstellung einer für dissoziation ausgelegten belasteten struktur

Country Status (7)

Country Link
US (2) US20060205179A1 (de)
EP (1) EP1570516B1 (de)
JP (1) JP4943656B2 (de)
AT (1) ATE325429T1 (de)
DE (1) DE60305067T2 (de)
FR (1) FR2848336B1 (de)
WO (1) WO2004064146A1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2748851B1 (fr) 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
FR2848337B1 (fr) * 2002-12-09 2005-09-09 Commissariat Energie Atomique Procede de realisation d'une structure complexe par assemblage de structures contraintes
FR2848336B1 (fr) 2002-12-09 2005-10-28 Commissariat Energie Atomique Procede de realisation d'une structure contrainte destinee a etre dissociee
FR2856844B1 (fr) 2003-06-24 2006-02-17 Commissariat Energie Atomique Circuit integre sur puce de hautes performances
FR2861497B1 (fr) 2003-10-28 2006-02-10 Soitec Silicon On Insulator Procede de transfert catastrophique d'une couche fine apres co-implantation
US8241996B2 (en) * 2005-02-28 2012-08-14 Silicon Genesis Corporation Substrate stiffness method and resulting devices for layer transfer process
FR2891281B1 (fr) 2005-09-28 2007-12-28 Commissariat Energie Atomique Procede de fabrication d'un element en couches minces.
FR2910179B1 (fr) 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
WO2010057068A2 (en) * 2008-11-16 2010-05-20 Suss Microtec, Inc. Method and apparatus for wafer bonding with enhanced wafer mating
FR2947098A1 (fr) 2009-06-18 2010-12-24 Commissariat Energie Atomique Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince
JP5549343B2 (ja) * 2010-03-18 2014-07-16 株式会社ニコン 基板接合装置、基板ホルダ、基板接合方法、デバイスの製造方法および位置合わせ装置
FR2962594B1 (fr) * 2010-07-07 2012-08-31 Soitec Silicon On Insulator Procede de collage par adhesion moleculaire avec compensation de desalignement radial
FR2972078A1 (fr) * 2011-02-24 2012-08-31 Soitec Silicon On Insulator Appareil et procédé de collage par adhésion moléculaire
FR2972848A1 (fr) * 2011-03-18 2012-09-21 Soitec Silicon On Insulator Appareil et procédé de collage par adhésion moléculaire avec minimisation de déformations locales
FR2985370A1 (fr) 2011-12-29 2013-07-05 Commissariat Energie Atomique Procede de fabrication d'une structure multicouche sur un support
US8916450B2 (en) * 2012-08-02 2014-12-23 International Business Machines Corporation Method for improving quality of spalled material layers
CN106548972B (zh) * 2015-09-18 2019-02-26 胡兵 一种将半导体衬底主体与其上功能层进行分离的方法
FR3077923B1 (fr) * 2018-02-12 2021-07-16 Soitec Silicon On Insulator Procede de fabrication d'une structure de type semi-conducteur sur isolant par transfert de couche
KR102648711B1 (ko) 2018-09-20 2024-03-20 삼성전자주식회사 기판 본딩 장치 및 그를 이용한 기판 본딩 방법
US11414782B2 (en) 2019-01-13 2022-08-16 Bing Hu Method of separating a film from a main body of a crystalline object
EP4055624B1 (de) * 2019-11-08 2023-09-27 EV Group E. Thallner GmbH Vorrichtung und verfahren zum verbinden von substraten

Family Cites Families (224)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3915757A (en) 1972-08-09 1975-10-28 Niels N Engel Ion plating method and product therefrom
US3913520A (en) 1972-08-14 1975-10-21 Precision Thin Film Corp High vacuum deposition apparatus
US3993909A (en) 1973-03-16 1976-11-23 U.S. Philips Corporation Substrate holder for etching thin films
FR2245779B1 (de) 1973-09-28 1978-02-10 Cit Alcatel
US3901423A (en) 1973-11-26 1975-08-26 Purdue Research Foundation Method for fracturing crystalline materials
US4170662A (en) 1974-11-05 1979-10-09 Eastman Kodak Company Plasma plating
US4121334A (en) 1974-12-17 1978-10-24 P. R. Mallory & Co. Inc. Application of field-assisted bonding to the mass production of silicon type pressure transducers
US3957107A (en) 1975-02-27 1976-05-18 The United States Of America As Represented By The Secretary Of The Air Force Thermal switch
US4039416A (en) 1975-04-21 1977-08-02 White Gerald W Gasless ion plating
GB1542299A (en) 1976-03-23 1979-03-14 Warner Lambert Co Blade shields
US4028149A (en) * 1976-06-30 1977-06-07 Ibm Corporation Process for forming monocrystalline silicon carbide on silicon substrates
US4074139A (en) 1976-12-27 1978-02-14 Rca Corporation Apparatus and method for maskless ion implantation
US4108751A (en) 1977-06-06 1978-08-22 King William J Ion beam implantation-sputtering
US4179324A (en) 1977-11-28 1979-12-18 Spire Corporation Process for fabricating thin film and glass sheet laminate
DE2849184A1 (de) * 1978-11-13 1980-05-22 Bbc Brown Boveri & Cie Verfahren zur herstellung eines scheibenfoermigen silizium-halbleiterbauelementes mit negativer anschraegung
JPS55104057A (en) 1979-02-02 1980-08-09 Hitachi Ltd Ion implantation device
US4324631A (en) * 1979-07-23 1982-04-13 Spin Physics, Inc. Magnetron sputtering of magnetic materials
CH640886A5 (de) 1979-08-02 1984-01-31 Balzers Hochvakuum Verfahren zum aufbringen harter verschleissfester ueberzuege auf unterlagen.
US4244348A (en) 1979-09-10 1981-01-13 Atlantic Richfield Company Process for cleaving crystalline materials
FR2475068B1 (fr) 1980-02-01 1986-05-16 Commissariat Energie Atomique Procede de dopage de semi-conducteurs
FR2506344B2 (fr) 1980-02-01 1986-07-11 Commissariat Energie Atomique Procede de dopage de semi-conducteurs
US4342631A (en) 1980-06-16 1982-08-03 Illinois Tool Works Inc. Gasless ion plating process and apparatus
US4471003A (en) 1980-11-25 1984-09-11 Cann Gordon L Magnetoplasmadynamic apparatus and process for the separation and deposition of materials
FR2501727A1 (fr) 1981-03-13 1982-09-17 Vide Traitement Procede de traitements thermochimiques de metaux par bombardement ionique
US4361600A (en) 1981-11-12 1982-11-30 General Electric Company Method of making integrated circuits
US4412868A (en) 1981-12-23 1983-11-01 General Electric Company Method of making integrated circuits utilizing ion implantation and selective epitaxial growth
US4486247A (en) 1982-06-21 1984-12-04 Westinghouse Electric Corp. Wear resistant steel articles with carbon, oxygen and nitrogen implanted in the surface thereof
FR2529383A1 (fr) 1982-06-24 1983-12-30 Commissariat Energie Atomique Porte-cible a balayage mecanique utilisable notamment pour l'implantation d'ioris
FR2537768A1 (fr) 1982-12-08 1984-06-15 Commissariat Energie Atomique Procede et dispositif d'obtention de faisceaux de particules de densite spatialement modulee, application a la gravure et a l'implantation ioniques
FR2537777A1 (fr) 1982-12-10 1984-06-15 Commissariat Energie Atomique Procede et dispositif d'implantation de particules dans un solide
US4500563A (en) 1982-12-15 1985-02-19 Pacific Western Systems, Inc. Independently variably controlled pulsed R.F. plasma chemical vapor processing
DE3246480A1 (de) 1982-12-15 1984-06-20 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur herstellung von halbleiterscheiben mit getternder scheibenrueckseite
US4468309A (en) 1983-04-22 1984-08-28 White Engineering Corporation Method for resisting galling
GB2144343A (en) 1983-08-02 1985-03-06 Standard Telephones Cables Ltd Optical fibre manufacture
US4567505A (en) 1983-10-27 1986-01-28 The Board Of Trustees Of The Leland Stanford Junior University Heat sink and method of attaching heat sink to a semiconductor integrated circuit and the like
JPS6088535U (ja) 1983-11-24 1985-06-18 住友電気工業株式会社 半導体ウエハ
FR2558263B1 (fr) 1984-01-12 1986-04-25 Commissariat Energie Atomique Accelerometre directif et son procede de fabrication par microlithographie
GB2155024A (en) 1984-03-03 1985-09-18 Standard Telephones Cables Ltd Surface treatment of plastics materials
FR2563377B1 (fr) 1984-04-19 1987-01-23 Commissariat Energie Atomique Procede de fabrication d'une couche isolante enterree dans un substrat semi-conducteur, par implantation ionique
US4542863A (en) 1984-07-23 1985-09-24 Larson Edwin L Pipe-thread sealing tape reel with tape retarding element
US4566403A (en) 1985-01-30 1986-01-28 Sovonics Solar Systems Apparatus for microwave glow discharge deposition
US4837172A (en) 1986-07-18 1989-06-06 Matsushita Electric Industrial Co., Ltd. Method for removing impurities existing in semiconductor substrate
US4717683A (en) 1986-09-23 1988-01-05 Motorola Inc. CMOS process
US4764394A (en) 1987-01-20 1988-08-16 Wisconsin Alumni Research Foundation Method and apparatus for plasma source ion implantation
EP0284818A1 (de) * 1987-04-03 1988-10-05 BBC Brown Boveri AG Verfahren zum Herstellen eines Schichtverbunds sowie Vorrichtung zur Durchführung eines Verfahrens
JPS63254762A (ja) 1987-04-13 1988-10-21 Nissan Motor Co Ltd Ｃｍｏｓ半導体装置
US4847792A (en) 1987-05-04 1989-07-11 Texas Instruments Incorporated Process and apparatus for detecting aberrations in production process operations
SE458398B (sv) 1987-05-27 1989-03-20 H Biverot Ljusdetekterande och ljusriktningsbestaemmande anordning
FR2616590B1 (fr) 1987-06-15 1990-03-02 Commissariat Energie Atomique Procede de fabrication d'une couche d'isolant enterree dans un substrat semi-conducteur par implantation ionique et structure semi-conductrice comportant cette couche
JPS644013A (en) * 1987-06-26 1989-01-09 Sony Corp Formation of substrate
US4956698A (en) 1987-07-29 1990-09-11 The United States Of America As Represented By The Department Of Commerce Group III-V compound semiconductor device having p-region formed by Be and Group V ions
US4846928A (en) 1987-08-04 1989-07-11 Texas Instruments, Incorporated Process and apparatus for detecting aberrations in production process operations
US4887005A (en) 1987-09-15 1989-12-12 Rough J Kirkwood H Multiple electrode plasma reactor power distribution system
US5015353A (en) 1987-09-30 1991-05-14 The United States Of America As Represented By The Secretary Of The Navy Method for producing substoichiometric silicon nitride of preselected proportions
US5138422A (en) 1987-10-27 1992-08-11 Nippondenso Co., Ltd. Semiconductor device which includes multiple isolated semiconductor segments on one chip
GB8725497D0 (en) 1987-10-30 1987-12-02 Atomic Energy Authority Uk Isolation of silicon
US5200805A (en) 1987-12-28 1993-04-06 Hughes Aircraft Company Silicon carbide:metal carbide alloy semiconductor and method of making the same
US4904610A (en) 1988-01-27 1990-02-27 General Instrument Corporation Wafer level process for fabricating passivated semiconductor devices
DE3803424C2 (de) 1988-02-05 1995-05-18 Gsf Forschungszentrum Umwelt Verfahren zur quantitativen, tiefendifferentiellen Analyse fester Proben
JP2666945B2 (ja) 1988-02-08 1997-10-22 株式会社東芝 半導体装置の製造方法
US4894709A (en) 1988-03-09 1990-01-16 Massachusetts Institute Of Technology Forced-convection, liquid-cooled, microchannel heat sinks
US4853250A (en) 1988-05-11 1989-08-01 Universite De Sherbrooke Process of depositing particulate material on a substrate
NL8802028A (nl) 1988-08-16 1990-03-16 Philips Nv Werkwijze voor het vervaardigen van een inrichting.
JP2670623B2 (ja) 1988-09-19 1997-10-29 アネルバ株式会社 マイクロ波プラズマ処理装置
US4952273A (en) 1988-09-21 1990-08-28 Microscience, Inc. Plasma generation in electron cyclotron resonance
US4996077A (en) 1988-10-07 1991-02-26 Texas Instruments Incorporated Distributed ECR remote plasma processing and apparatus
US4891329A (en) 1988-11-29 1990-01-02 University Of North Carolina Method of forming a nonsilicon semiconductor on insulator structure
NL8900388A (nl) 1989-02-17 1990-09-17 Philips Nv Werkwijze voor het verbinden van twee voorwerpen.
JPH02302044A (ja) 1989-05-16 1990-12-14 Fujitsu Ltd 半導体装置の製造方法
US4929566A (en) 1989-07-06 1990-05-29 Harris Corporation Method of making dielectrically isolated integrated circuits using oxygen implantation and expitaxial growth
JPH0355822A (ja) * 1989-07-25 1991-03-11 Shin Etsu Handotai Co Ltd 半導体素子形成用基板の製造方法
US4948458A (en) 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
US5036023A (en) 1989-08-16 1991-07-30 At&T Bell Laboratories Rapid thermal processing method of making a semiconductor device
US5013681A (en) 1989-09-29 1991-05-07 The United States Of America As Represented By The Secretary Of The Navy Method of producing a thin silicon-on-insulator layer
US5310446A (en) 1990-01-10 1994-05-10 Ricoh Company, Ltd. Method for producing semiconductor film
JPH0650738B2 (ja) 1990-01-11 1994-06-29 株式会社東芝 半導体装置及びその製造方法
US5034343A (en) 1990-03-08 1991-07-23 Harris Corporation Manufacturing ultra-thin wafer using a handle wafer
JP2535645B2 (ja) * 1990-04-20 1996-09-18 富士通株式会社 半導体基板の製造方法
CA2081553A1 (en) * 1990-05-09 1991-11-10 Marc Stevens Newkirk Thin metal matrix composites and production method
CN1018844B (zh) * 1990-06-02 1992-10-28 中国科学院兰州化学物理研究所 防锈干膜润滑剂
US5131968A (en) * 1990-07-31 1992-07-21 Motorola, Inc. Gradient chuck method for wafer bonding employing a convex pressure
JPH0719739B2 (ja) 1990-09-10 1995-03-06 信越半導体株式会社 接合ウェーハの製造方法
US5198371A (en) 1990-09-24 1993-03-30 Biota Corp. Method of making silicon material with enhanced surface mobility by hydrogen ion implantation
US5618739A (en) 1990-11-15 1997-04-08 Seiko Instruments Inc. Method of making light valve device using semiconductive composite substrate
US5300788A (en) * 1991-01-18 1994-04-05 Kopin Corporation Light emitting diode bars and arrays and method of making same
DE4106288C2 (de) 1991-02-28 2001-05-31 Bosch Gmbh Robert Sensor zur Messung von Drücken oder Beschleunigungen
JP2812405B2 (ja) 1991-03-15 1998-10-22 信越半導体株式会社 半導体基板の製造方法
US5110748A (en) 1991-03-28 1992-05-05 Honeywell Inc. Method for fabricating high mobility thin film transistors as integrated drivers for active matrix display
US5442205A (en) 1991-04-24 1995-08-15 At&T Corp. Semiconductor heterostructure devices with strained semiconductor layers
US5256581A (en) 1991-08-28 1993-10-26 Motorola, Inc. Silicon film with improved thickness control
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
JPH06196377A (ja) * 1991-11-19 1994-07-15 Sumitomo Metal Mining Co Ltd 半導体基板の接合方法
JP3416163B2 (ja) * 1992-01-31 2003-06-16 キヤノン株式会社 半導体基板及びその作製方法
JPH05235312A (ja) 1992-02-19 1993-09-10 Fujitsu Ltd 半導体基板及びその製造方法
US5614019A (en) 1992-06-08 1997-03-25 Air Products And Chemicals, Inc. Method for the growth of industrial crystals
DE4224395A1 (de) * 1992-07-23 1994-01-27 Wacker Chemitronic Halbleiterscheiben mit definiert geschliffener Verformung und Verfahren zu ihrer Herstellung
US5234535A (en) 1992-12-10 1993-08-10 International Business Machines Corporation Method of producing a thin silicon-on-insulator layer
WO1994017558A1 (en) 1993-01-29 1994-08-04 The Regents Of The University Of California Monolithic passive component
US5400458A (en) * 1993-03-31 1995-03-28 Minnesota Mining And Manufacturing Company Brush segment for industrial brushes
FR2714524B1 (fr) 1993-12-23 1996-01-26 Commissariat Energie Atomique Procede de realisation d'une structure en relief sur un support en materiau semiconducteur
DE69423594T2 (de) 1993-12-28 2000-07-20 Honda Motor Co Ltd Gaszufuhrmechanismus für Gasbrennkraftmaschine
DE4400985C1 (de) 1994-01-14 1995-05-11 Siemens Ag Verfahren zur Herstellung einer dreidimensionalen Schaltungsanordnung
FR2715502B1 (fr) 1994-01-26 1996-04-05 Commissariat Energie Atomique Structure présentant des cavités et procédé de réalisation d'une telle structure.
FR2715503B1 (fr) 1994-01-26 1996-04-05 Commissariat Energie Atomique Substrat pour composants intégrés comportant une couche mince et son procédé de réalisation.
FR2715501B1 (fr) 1994-01-26 1996-04-05 Commissariat Energie Atomique Procédé de dépôt de lames semiconductrices sur un support.
JP3293736B2 (ja) * 1996-02-28 2002-06-17 キヤノン株式会社 半導体基板の作製方法および貼り合わせ基体
US5880010A (en) 1994-07-12 1999-03-09 Sun Microsystems, Inc. Ultrathin electronics
JPH0851103A (ja) 1994-08-08 1996-02-20 Fuji Electric Co Ltd 薄膜の生成方法
US5524339A (en) 1994-09-19 1996-06-11 Martin Marietta Corporation Method for protecting gallium arsenide mmic air bridge structures
FR2725074B1 (fr) 1994-09-22 1996-12-20 Commissariat Energie Atomique Procede de fabrication d'une structure comportant une couche mince semi-conductrice sur un substrat
US5567654A (en) 1994-09-28 1996-10-22 International Business Machines Corporation Method and workpiece for connecting a thin layer to a monolithic electronic module's surface and associated module packaging
JP3743519B2 (ja) 1994-10-18 2006-02-08 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ シリコン−酸化物薄層の製造方法
ATE216802T1 (de) 1994-12-12 2002-05-15 Advanced Micro Devices Inc Verfahren zur herstellung vergrabener oxidschichten
JP3381443B2 (ja) * 1995-02-02 2003-02-24 ソニー株式会社 基体から半導体層を分離する方法、半導体素子の製造方法およびｓｏｉ基板の製造方法
FR2736934B1 (fr) 1995-07-21 1997-08-22 Commissariat Energie Atomique Procede de fabrication d'une structure avec une couche utile maintenue a distance d'un substrat par des butees, et de desolidarisation d'une telle couche
FR2738671B1 (fr) 1995-09-13 1997-10-10 Commissariat Energie Atomique Procede de fabrication de films minces a materiau semiconducteur
CN1132223C (zh) * 1995-10-06 2003-12-24 佳能株式会社 半导体衬底及其制造方法
FR2744285B1 (fr) * 1996-01-25 1998-03-06 Commissariat Energie Atomique Procede de transfert d'une couche mince d'un substrat initial sur un substrat final
FR2747506B1 (fr) 1996-04-11 1998-05-15 Commissariat Energie Atomique Procede d'obtention d'un film mince de materiau semiconducteur comprenant notamment des composants electroniques
FR2748850B1 (fr) 1996-05-15 1998-07-24 Commissariat Energie Atomique Procede de realisation d'un film mince de materiau solide et applications de ce procede
FR2748851B1 (fr) 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
US5863832A (en) 1996-06-28 1999-01-26 Intel Corporation Capping layer in interconnect system and method for bonding the capping layer onto the interconnect system
US5897331A (en) 1996-11-08 1999-04-27 Midwest Research Institute High efficiency low cost thin film silicon solar cell design and method for making
US6127199A (en) * 1996-11-12 2000-10-03 Seiko Epson Corporation Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device
SG65697A1 (en) * 1996-11-15 1999-06-22 Canon Kk Process for producing semiconductor article
US6054363A (en) 1996-11-15 2000-04-25 Canon Kabushiki Kaisha Method of manufacturing semiconductor article
DE19648501A1 (de) 1996-11-22 1998-05-28 Max Planck Gesellschaft Verfahren für die lösbare Verbindung und anschließende Trennung reversibel gebondeter und polierter Scheiben sowie eine Waferstruktur und Wafer
KR100232886B1 (ko) * 1996-11-23 1999-12-01 김영환 Soi 웨이퍼 제조방법
DE19648759A1 (de) 1996-11-25 1998-05-28 Max Planck Gesellschaft Verfahren zur Herstellung von Mikrostrukturen sowie Mikrostruktur
FR2756847B1 (fr) * 1996-12-09 1999-01-08 Commissariat Energie Atomique Procede de separation d'au moins deux elements d'une structure en contact entre eux par implantation ionique
SG67458A1 (en) 1996-12-18 1999-09-21 Canon Kk Process for producing semiconductor article
FR2758907B1 (fr) 1997-01-27 1999-05-07 Commissariat Energie Atomique Procede d'obtention d'un film mince, notamment semiconducteur, comportant une zone protegee des ions, et impliquant une etape d'implantation ionique
JP3114643B2 (ja) 1997-02-20 2000-12-04 日本電気株式会社 半導体基板の構造および製造方法
JPH10275752A (ja) 1997-03-28 1998-10-13 Ube Ind Ltd 張合わせウエハ−及びその製造方法、基板
US6013954A (en) 1997-03-31 2000-01-11 Nec Corporation Semiconductor wafer having distortion-free alignment regions
US6251754B1 (en) 1997-05-09 2001-06-26 Denso Corporation Semiconductor substrate manufacturing method
US6155909A (en) * 1997-05-12 2000-12-05 Silicon Genesis Corporation Controlled cleavage system using pressurized fluid
US6033974A (en) 1997-05-12 2000-03-07 Silicon Genesis Corporation Method for controlled cleaving process
US5877070A (en) * 1997-05-31 1999-03-02 Max-Planck Society Method for the transfer of thin layers of monocrystalline material to a desirable substrate
US6150239A (en) * 1997-05-31 2000-11-21 Max Planck Society Method for the transfer of thin layers monocrystalline material onto a desirable substrate
US6054369A (en) 1997-06-30 2000-04-25 Intersil Corporation Lifetime control for semiconductor devices
US6097096A (en) 1997-07-11 2000-08-01 Advanced Micro Devices Metal attachment method and structure for attaching substrates at low temperatures
US6534380B1 (en) * 1997-07-18 2003-03-18 Denso Corporation Semiconductor substrate and method of manufacturing the same
US6103599A (en) * 1997-07-25 2000-08-15 Silicon Genesis Corporation Planarizing technique for multilayered substrates
US6255731B1 (en) 1997-07-30 2001-07-03 Canon Kabushiki Kaisha SOI bonding structure
FR2767416B1 (fr) 1997-08-12 1999-10-01 Commissariat Energie Atomique Procede de fabrication d'un film mince de materiau solide
FR2767604B1 (fr) 1997-08-19 2000-12-01 Commissariat Energie Atomique Procede de traitement pour le collage moleculaire et le decollage de deux structures
US5882987A (en) 1997-08-26 1999-03-16 International Business Machines Corporation Smart-cut process for the production of thin semiconductor material films
JP3697034B2 (ja) 1997-08-26 2005-09-21 キヤノン株式会社 微小開口を有する突起の製造方法、及びそれらによるプローブまたはマルチプローブ
US5981400A (en) 1997-09-18 1999-11-09 Cornell Research Foundation, Inc. Compliant universal substrate for epitaxial growth
US5920764A (en) * 1997-09-30 1999-07-06 International Business Machines Corporation Process for restoring rejected wafers in line for reuse as new
JP2998724B2 (ja) 1997-11-10 2000-01-11 日本電気株式会社 張り合わせｓｏｉ基板の製造方法
FR2771852B1 (fr) 1997-12-02 1999-12-31 Commissariat Energie Atomique Procede de transfert selectif d'une microstructure, formee sur un substrat initial, vers un substrat final
JP4173573B2 (ja) * 1997-12-03 2008-10-29 株式会社ナノテム 多孔質砥粒砥石の製造方法
FR2773261B1 (fr) * 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
JP3501642B2 (ja) 1997-12-26 2004-03-02 キヤノン株式会社 基板処理方法
US6071795A (en) * 1998-01-23 2000-06-06 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
FR2774510B1 (fr) 1998-02-02 2001-10-26 Soitec Silicon On Insulator Procede de traitement de substrats, notamment semi-conducteurs
FR2774797B1 (fr) * 1998-02-11 2000-03-10 Commissariat Energie Atomique Procede de realisation d'un ensemble a plusieurs tetes magnetiques et ensemble a tetes multiples obtenu par ce procede
MY118019A (en) 1998-02-18 2004-08-30 Canon Kk Composite member, its separation method, and preparation method of semiconductor substrate by utilization thereof
US6156623A (en) * 1998-03-03 2000-12-05 Advanced Technology Materials, Inc. Stress control of thin films by mechanical deformation of wafer substrate
JPH11307747A (ja) * 1998-04-17 1999-11-05 Nec Corp Ｓｏｉ基板およびその製造方法
US6057212A (en) 1998-05-04 2000-05-02 International Business Machines Corporation Method for making bonded metal back-plane substrates
US5909627A (en) * 1998-05-18 1999-06-01 Philips Electronics North America Corporation Process for production of thin layers of semiconductor material
DE19840421C2 (de) 1998-06-22 2000-05-31 Fraunhofer Ges Forschung Verfahren zur Fertigung von dünnen Substratschichten und eine dafür geeignete Substratanordnung
US6054370A (en) * 1998-06-30 2000-04-25 Intel Corporation Method of delaminating a pre-fabricated transistor layer from a substrate for placement on another wafer
US6271101B1 (en) * 1998-07-29 2001-08-07 Semiconductor Energy Laboratory Co., Ltd. Process for production of SOI substrate and process for production of semiconductor device
US6118181A (en) 1998-07-29 2000-09-12 Agilent Technologies, Inc. System and method for bonding wafers
FR2781925B1 (fr) 1998-07-30 2001-11-23 Commissariat Energie Atomique Transfert selectif d'elements d'un support vers un autre support
EP0989593A3 (de) 1998-09-25 2002-01-02 Canon Kabushiki Kaisha Verfahren und Vorrichtung zur Zerteilung von Substrat und Substratherstellungverfahren
FR2784795B1 (fr) * 1998-10-16 2000-12-01 Commissariat Energie Atomique Structure comportant une couche mince de materiau composee de zones conductrices et de zones isolantes et procede de fabrication d'une telle structure
FR2784800B1 (fr) 1998-10-20 2000-12-01 Commissariat Energie Atomique Procede de realisation de composants passifs et actifs sur un meme substrat isolant
US6276345B1 (en) 1998-12-23 2001-08-21 Kohler Co. Dual fuel system for an internal combustion engine
US6346458B1 (en) * 1998-12-31 2002-02-12 Robert W. Bower Transposed split of ion cut materials
FR2789518B1 (fr) * 1999-02-10 2003-06-20 Commissariat Energie Atomique Structure multicouche a contraintes internes controlees et procede de realisation d'une telle structure
JP3532788B2 (ja) 1999-04-13 2004-05-31 唯知 須賀 半導体装置及びその製造方法
AU4481100A (en) 1999-04-21 2000-11-02 Silicon Genesis Corporation Treatment method of cleaved film for the manufacture of substrates
JP2001015721A (ja) * 1999-04-30 2001-01-19 Canon Inc 複合部材の分離方法及び薄膜の製造方法
US6310387B1 (en) 1999-05-03 2001-10-30 Silicon Wave, Inc. Integrated circuit inductor with high self-resonance frequency
US6664169B1 (en) 1999-06-08 2003-12-16 Canon Kabushiki Kaisha Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus
US6362082B1 (en) 1999-06-28 2002-03-26 Intel Corporation Methodology for control of short channel effects in MOS transistors
FR2796491B1 (fr) 1999-07-12 2001-08-31 Commissariat Energie Atomique Procede de decollement de deux elements et dispositif pour sa mise en oeuvre
US6323108B1 (en) * 1999-07-27 2001-11-27 The United States Of America As Represented By The Secretary Of The Navy Fabrication ultra-thin bonded semiconductor layers
US6287940B1 (en) 1999-08-02 2001-09-11 Honeywell International Inc. Dual wafer attachment process
FR2797347B1 (fr) 1999-08-04 2001-11-23 Commissariat Energie Atomique Procede de transfert d'une couche mince comportant une etape de surfragililisation
EP1212787B1 (de) 1999-08-10 2014-10-08 Silicon Genesis Corporation Spaltprozess für die herstellung mehrlagiger substrate mit geringer implantationsdosis
US6263941B1 (en) * 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates
KR100413789B1 (ko) 1999-11-01 2003-12-31 삼성전자주식회사 고진공 패키징 마이크로자이로스코프 및 그 제조방법
DE19958803C1 (de) 1999-12-07 2001-08-30 Fraunhofer Ges Forschung Verfahren und Vorrichtung zum Handhaben von Halbleitersubstraten bei der Prozessierung und/oder Bearbeitung
US6306720B1 (en) 2000-01-10 2001-10-23 United Microelectronics Corp. Method for forming capacitor of mixed-mode device
JP3975634B2 (ja) * 2000-01-25 2007-09-12 信越半導体株式会社 半導体ウェハの製作法
AU2001254866A1 (en) * 2000-04-14 2001-10-30 S.O.I.Tec Silicon On Insulator Technologies Method for cutting out at least a thin layer in a substrate or ingot, in particular made of semiconductor material(s)
FR2809867B1 (fr) * 2000-05-30 2003-10-24 Commissariat Energie Atomique Substrat fragilise et procede de fabrication d'un tel substrat
US6407929B1 (en) 2000-06-29 2002-06-18 Intel Corporation Electronic package having embedded capacitors and method of fabrication therefor
FR2811807B1 (fr) 2000-07-12 2003-07-04 Commissariat Energie Atomique Procede de decoupage d'un bloc de materiau et de formation d'un film mince
KR100414479B1 (ko) * 2000-08-09 2004-01-07 주식회사 코스타트반도체 반도체 패키징 공정의 이식성 도전패턴을 갖는 테이프 및그 제조방법
US6600173B2 (en) * 2000-08-30 2003-07-29 Cornell Research Foundation, Inc. Low temperature semiconductor layering and three-dimensional electronic circuits using the layering
FR2818010B1 (fr) 2000-12-08 2003-09-05 Commissariat Energie Atomique Procede de realisation d'une couche mince impliquant l'introduction d'especes gazeuses
FR2819099B1 (fr) 2000-12-28 2003-09-26 Commissariat Energie Atomique Procede de realisation d'une structure empilee
FR2823373B1 (fr) * 2001-04-10 2005-02-04 Soitec Silicon On Insulator Dispositif de coupe de couche d'un substrat, et procede associe
FR2823596B1 (fr) 2001-04-13 2004-08-20 Commissariat Energie Atomique Substrat ou structure demontable et procede de realisation
FR2823599B1 (fr) 2001-04-13 2004-12-17 Commissariat Energie Atomique Substrat demomtable a tenue mecanique controlee et procede de realisation
US6759282B2 (en) * 2001-06-12 2004-07-06 International Business Machines Corporation Method and structure for buried circuits and devices
FR2830983B1 (fr) 2001-10-11 2004-05-14 Commissariat Energie Atomique Procede de fabrication de couches minces contenant des microcomposants
US6593212B1 (en) * 2001-10-29 2003-07-15 The United States Of America As Represented By The Secretary Of The Navy Method for making electro-optical devices using a hydrogenion splitting technique
US6953735B2 (en) * 2001-12-28 2005-10-11 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device by transferring a layer to a support with curvature
FR2834820B1 (fr) * 2002-01-16 2005-03-18 Procede de clivage de couches d'une tranche de materiau
US6607969B1 (en) * 2002-03-18 2003-08-19 The United States Of America As Represented By The Secretary Of The Navy Method for making pyroelectric, electro-optical and decoupling capacitors using thin film transfer and hydrogen ion splitting techniques
US6767749B2 (en) * 2002-04-22 2004-07-27 The United States Of America As Represented By The Secretary Of The Navy Method for making piezoelectric resonator and surface acoustic wave device using hydrogen implant layer splitting
AU2003284055A1 (en) * 2002-10-09 2004-05-04 The Board Of Trustees Of The University Of Illinois Microfluidic systems and components
FR2847075B1 (fr) 2002-11-07 2005-02-18 Commissariat Energie Atomique Procede de formation d'une zone fragile dans un substrat par co-implantation
FR2848336B1 (fr) 2002-12-09 2005-10-28 Commissariat Energie Atomique Procede de realisation d'une structure contrainte destinee a etre dissociee
FR2850487B1 (fr) 2002-12-24 2005-12-09 Commissariat Energie Atomique Procede de realisation de substrats mixtes et structure ainsi obtenue
FR2856844B1 (fr) 2003-06-24 2006-02-17 Commissariat Energie Atomique Circuit integre sur puce de hautes performances
FR2857953B1 (fr) 2003-07-21 2006-01-13 Commissariat Energie Atomique Structure empilee, et procede pour la fabriquer
FR2861497B1 (fr) 2003-10-28 2006-02-10 Soitec Silicon On Insulator Procede de transfert catastrophique d'une couche fine apres co-implantation
US7772087B2 (en) 2003-12-19 2010-08-10 Commissariat A L'energie Atomique Method of catastrophic transfer of a thin film after co-implantation
FR2889887B1 (fr) 2005-08-16 2007-11-09 Commissariat Energie Atomique Procede de report d'une couche mince sur un support
FR2891281B1 (fr) 2005-09-28 2007-12-28 Commissariat Energie Atomique Procede de fabrication d'un element en couches minces.
FR2899378B1 (fr) 2006-03-29 2008-06-27 Commissariat Energie Atomique Procede de detachement d'un film mince par fusion de precipites
FR2910179B1 (fr) 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
FR2922359B1 (fr) 2007-10-12 2009-12-18 Commissariat Energie Atomique Procede de fabrication d'une structure micro-electronique impliquant un collage moleculaire
FR2925221B1 (fr) 2007-12-17 2010-02-19 Commissariat Energie Atomique Procede de transfert d'une couche mince
FR2947098A1 (fr) 2009-06-18 2010-12-24 Commissariat Energie Atomique Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince

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FR2848336B1 (fr) 2005-10-28
EP1570516B1 (de) 2006-05-03
US20060205179A1 (en) 2006-09-14
EP1570516A1 (de) 2005-09-07
FR2848336A1 (fr) 2004-06-11
JP2006509377A (ja) 2006-03-16
DE60305067T2 (de) 2006-12-07
US20100167499A1 (en) 2010-07-01
JP4943656B2 (ja) 2012-05-30
WO2004064146A1 (fr) 2004-07-29
US8389379B2 (en) 2013-03-05
ATE325429T1 (de) 2006-06-15

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