DE60302950D1 - Wismut-Titan-Silizium-Oxid, Wismut-Titan-Silizium-Oxiddünnfilm, und Verfahren zur Herstellung des Dünnfilms - Google Patents
Wismut-Titan-Silizium-Oxid, Wismut-Titan-Silizium-Oxiddünnfilm, und Verfahren zur Herstellung des DünnfilmsInfo
- Publication number
- DE60302950D1 DE60302950D1 DE60302950T DE60302950T DE60302950D1 DE 60302950 D1 DE60302950 D1 DE 60302950D1 DE 60302950 T DE60302950 T DE 60302950T DE 60302950 T DE60302950 T DE 60302950T DE 60302950 D1 DE60302950 D1 DE 60302950D1
- Authority
- DE
- Germany
- Prior art keywords
- bismuth
- thin film
- titanium
- silicon oxide
- producing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- HIOAKZIMACQAFD-UHFFFAOYSA-N [Si]=O.[Ti].[Bi] Chemical compound [Si]=O.[Ti].[Bi] HIOAKZIMACQAFD-UHFFFAOYSA-N 0.000 title 2
- 239000010409 thin film Substances 0.000 title 2
Classifications
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- C01G29/006—Compounds containing, besides bismuth, two or more other elements, with the exception of oxygen or hydrogen
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- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
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- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3232—Titanium oxides or titanates, e.g. rutile or anatase
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- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/44—Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
- C04B2235/441—Alkoxides, e.g. methoxide, tert-butoxide
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- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/44—Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
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- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/76—Crystal structural characteristics, e.g. symmetry
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01022—Titanium [Ti]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01083—Bismuth [Bi]
Applications Claiming Priority (2)
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KR2002046306 | 2002-08-06 | ||
KR1020020046306A KR100723399B1 (ko) | 2002-08-06 | 2002-08-06 | 비스무트 티타늄 실리콘 산화물, 비스무트 티타늄 실리콘산화물 박막 및 그 제조방법 |
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DE60302950D1 true DE60302950D1 (de) | 2006-02-02 |
DE60302950T2 DE60302950T2 (de) | 2006-09-21 |
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CN (1) | CN1252804C (de) |
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US6852167B2 (en) * | 2001-03-01 | 2005-02-08 | Micron Technology, Inc. | Methods, systems, and apparatus for uniform chemical-vapor depositions |
US7160577B2 (en) * | 2002-05-02 | 2007-01-09 | Micron Technology, Inc. | Methods for atomic-layer deposition of aluminum oxides in integrated circuits |
US7221586B2 (en) | 2002-07-08 | 2007-05-22 | Micron Technology, Inc. | Memory utilizing oxide nanolaminates |
US6790791B2 (en) * | 2002-08-15 | 2004-09-14 | Micron Technology, Inc. | Lanthanide doped TiOx dielectric films |
US7618681B2 (en) * | 2003-10-28 | 2009-11-17 | Asm International N.V. | Process for producing bismuth-containing oxide films |
CN100517608C (zh) * | 2004-02-28 | 2009-07-22 | 三星电子株式会社 | 非晶电介质薄膜及其制造方法 |
US7081421B2 (en) | 2004-08-26 | 2006-07-25 | Micron Technology, Inc. | Lanthanide oxide dielectric layer |
US7494939B2 (en) * | 2004-08-31 | 2009-02-24 | Micron Technology, Inc. | Methods for forming a lanthanum-metal oxide dielectric layer |
KR100601965B1 (ko) * | 2004-10-02 | 2006-07-18 | 삼성전자주식회사 | n형 탄소 나노튜브를 구비한 n형 탄소나노튜브 전계효과트랜지스터 및 그 제조방법 |
US7235501B2 (en) * | 2004-12-13 | 2007-06-26 | Micron Technology, Inc. | Lanthanum hafnium oxide dielectrics |
US20060125030A1 (en) * | 2004-12-13 | 2006-06-15 | Micron Technology, Inc. | Hybrid ALD-CVD of PrxOy/ZrO2 films as gate dielectrics |
US7560395B2 (en) * | 2005-01-05 | 2009-07-14 | Micron Technology, Inc. | Atomic layer deposited hafnium tantalum oxide dielectrics |
US7508648B2 (en) * | 2005-02-08 | 2009-03-24 | Micron Technology, Inc. | Atomic layer deposition of Dy doped HfO2 films as gate dielectrics |
US7498247B2 (en) * | 2005-02-23 | 2009-03-03 | Micron Technology, Inc. | Atomic layer deposition of Hf3N4/HfO2 films as gate dielectrics |
US7687409B2 (en) * | 2005-03-29 | 2010-03-30 | Micron Technology, Inc. | Atomic layer deposited titanium silicon oxide films |
US7390756B2 (en) * | 2005-04-28 | 2008-06-24 | Micron Technology, Inc. | Atomic layer deposited zirconium silicon oxide films |
US7927948B2 (en) | 2005-07-20 | 2011-04-19 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
US7713584B2 (en) * | 2005-12-22 | 2010-05-11 | Asm International N.V. | Process for producing oxide films |
KR20070099913A (ko) * | 2006-04-06 | 2007-10-10 | 주성엔지니어링(주) | 산화막 형성 방법 및 산화막 증착 장치 |
US20100036144A1 (en) * | 2006-07-20 | 2010-02-11 | Ce Ma | Methods for atomic layer deposition |
DE102006039956A1 (de) * | 2006-08-25 | 2008-03-20 | Qimonda Ag | Schichtabscheideprozess |
US7605030B2 (en) | 2006-08-31 | 2009-10-20 | Micron Technology, Inc. | Hafnium tantalum oxynitride high-k dielectric and metal gates |
US20090035946A1 (en) * | 2007-07-31 | 2009-02-05 | Asm International N.V. | In situ deposition of different metal-containing films using cyclopentadienyl metal precursors |
US8383525B2 (en) * | 2008-04-25 | 2013-02-26 | Asm America, Inc. | Plasma-enhanced deposition process for forming a metal oxide thin film and related structures |
US9230994B2 (en) | 2010-09-15 | 2016-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
US10262164B2 (en) | 2016-01-15 | 2019-04-16 | Blockchain Asics Llc | Cryptographic ASIC including circuitry-encoded transformation function |
CN109351127A (zh) * | 2016-12-13 | 2019-02-19 | 南通星辰合成材料有限公司 | 环氧树脂生产中去除ech、氮气回用的尾气处理方法 |
US10372943B1 (en) | 2018-03-20 | 2019-08-06 | Blockchain Asics Llc | Cryptographic ASIC with combined transformation and one-way functions |
US10256974B1 (en) | 2018-04-25 | 2019-04-09 | Blockchain Asics Llc | Cryptographic ASIC for key hierarchy enforcement |
RU2717149C1 (ru) * | 2019-05-13 | 2020-03-18 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) | Способ изготовления полупроводникового прибора |
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JPS5260989A (en) * | 1975-11-13 | 1977-05-19 | Matsushita Electric Ind Co Ltd | Manufacturing of dielectric thin film |
US20030152813A1 (en) * | 1992-10-23 | 2003-08-14 | Symetrix Corporation | Lanthanide series layered superlattice materials for integrated circuit appalications |
US6126743A (en) * | 1993-03-12 | 2000-10-03 | Sumitomo Chemical Company, Limited | Process for producing dielectrics and fine single crystal powders and thin film capacitor |
JP3015717B2 (ja) * | 1994-09-14 | 2000-03-06 | 三洋電機株式会社 | 半導体装置の製造方法および半導体装置 |
JP3480624B2 (ja) * | 1995-06-09 | 2003-12-22 | シャープ株式会社 | 強誘電体薄膜被覆基板、その製造方法、及びキャパシタ構造素子 |
US6004392A (en) * | 1995-09-11 | 1999-12-21 | Sony Corporation | Ferroelectric capacitor and manufacturing the same using bismuth layered oxides |
US6379803B1 (en) | 1997-06-03 | 2002-04-30 | Nippon Sheet Glass Co., Ltd. | Low-reflectance glass article and process for preparing the same |
JPH1154053A (ja) | 1997-06-03 | 1999-02-26 | Nippon Sheet Glass Co Ltd | 低反射ガラス物品およびその製造方法 |
US6020024A (en) * | 1997-08-04 | 2000-02-01 | Motorola, Inc. | Method for forming high dielectric constant metal oxides |
JPH11186523A (ja) * | 1997-12-19 | 1999-07-09 | Sharp Corp | 絶縁体材料、絶縁膜被覆基板、その製造方法及びその用途 |
US6242771B1 (en) | 1998-01-02 | 2001-06-05 | Sharp Laboratories Of America, Inc. | Chemical vapor deposition of PB5GE3O11 thin film for ferroelectric applications |
US6011285A (en) | 1998-01-02 | 2000-01-04 | Sharp Laboratories Of America, Inc. | C-axis oriented thin film ferroelectric transistor memory cell and method of making the same |
JP2000323591A (ja) * | 1999-05-14 | 2000-11-24 | Matsushita Electric Ind Co Ltd | 半導体素子及び誘電体膜の形成方法 |
KR100570576B1 (ko) * | 2000-10-17 | 2006-04-13 | 샤프 가부시키가이샤 | 산화물 재료, 산화물 박막의 제조 방법 및 상기 재료를사용한 소자 |
WO2003023858A1 (fr) * | 2001-09-05 | 2003-03-20 | Seiko Epson Corporation | Memoire ferroelectrique et procede de production de cette memoire |
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KR100723399B1 (ko) | 2007-05-30 |
CN1495867A (zh) | 2004-05-12 |
KR20040013401A (ko) | 2004-02-14 |
US7374994B2 (en) | 2008-05-20 |
US7892917B2 (en) | 2011-02-22 |
EP1391429B1 (de) | 2005-12-28 |
JP4387723B2 (ja) | 2009-12-24 |
CN1252804C (zh) | 2006-04-19 |
US20080293256A1 (en) | 2008-11-27 |
EP1391429A1 (de) | 2004-02-25 |
US20050272200A1 (en) | 2005-12-08 |
DE60302950T2 (de) | 2006-09-21 |
JP2004083402A (ja) | 2004-03-18 |
US6919597B2 (en) | 2005-07-19 |
US20040028811A1 (en) | 2004-02-12 |
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