DE60239555D1 - Ätzstopp harze - Google Patents

Ätzstopp harze

Info

Publication number
DE60239555D1
DE60239555D1 DE60239555T DE60239555T DE60239555D1 DE 60239555 D1 DE60239555 D1 DE 60239555D1 DE 60239555 T DE60239555 T DE 60239555T DE 60239555 T DE60239555 T DE 60239555T DE 60239555 D1 DE60239555 D1 DE 60239555D1
Authority
DE
Germany
Prior art keywords
sub
resins
ätzstopp
dynes
mole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60239555T
Other languages
English (en)
Inventor
Ronald Boisvert
Stelian Grigoras
David Ha
Brian Harkness
Craig Yeakle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Application granted granted Critical
Publication of DE60239555D1 publication Critical patent/DE60239555D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/06—Preparatory processes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C08G77/16—Polysiloxanes containing silicon bound to oxygen-containing groups to hydroxyl groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/70—Siloxanes defined by use of the MDTQ nomenclature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
DE60239555T 2001-10-22 2002-10-04 Ätzstopp harze Expired - Lifetime DE60239555D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/066,261 US20030096090A1 (en) 2001-10-22 2001-10-22 Etch-stop resins
PCT/US2002/031824 WO2003035720A1 (en) 2001-10-22 2002-10-04 Etch-stop resins

Publications (1)

Publication Number Publication Date
DE60239555D1 true DE60239555D1 (de) 2011-05-05

Family

ID=22068344

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60239555T Expired - Lifetime DE60239555D1 (de) 2001-10-22 2002-10-04 Ätzstopp harze

Country Status (9)

Country Link
US (2) US20030096090A1 (de)
EP (1) EP1442071B1 (de)
JP (1) JP4413612B2 (de)
KR (1) KR100898158B1 (de)
CN (1) CN1260273C (de)
AT (1) ATE502974T1 (de)
DE (1) DE60239555D1 (de)
TW (1) TW574104B (de)
WO (1) WO2003035720A1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101156200B1 (ko) * 2003-05-23 2012-06-18 다우 코닝 코포레이션 습식 에치율이 높은 실록산 수지계 반사 방지 피막 조성물
US20050215713A1 (en) * 2004-03-26 2005-09-29 Hessell Edward T Method of producing a crosslinked coating in the manufacture of integrated circuits
WO2006065316A1 (en) * 2004-12-17 2006-06-22 Dow Corning Corporation Method for forming anti-reflective coating
EP1819844B1 (de) 2004-12-17 2008-07-09 Dow Corning Corporation Verfahren zur ausbildung einer antireflexionsbeschichtung
KR101191098B1 (ko) * 2004-12-17 2012-10-15 다우 코닝 코포레이션 실록산 수지 피복물
CN101278025A (zh) * 2005-09-29 2008-10-01 陶氏康宁公司 从金属基底中剥离高温膜和/或器件的方法
WO2007094848A2 (en) 2006-02-13 2007-08-23 Dow Corning Corporation Antireflective coating material
JP2009545872A (ja) * 2006-06-05 2009-12-24 ダウ コーニング コーポレイシヨン シリコーン樹脂層を含む太陽電池
US8653217B2 (en) 2007-05-01 2014-02-18 Dow Corning Corporation Method for forming anti-reflective coating
US20100003828A1 (en) * 2007-11-28 2010-01-07 Guowen Ding Methods for adjusting critical dimension uniformity in an etch process with a highly concentrated unsaturated hydrocarbon gas
JP5587791B2 (ja) 2008-01-08 2014-09-10 東レ・ダウコーニング株式会社 シルセスキオキサン樹脂
WO2009091440A1 (en) * 2008-01-15 2009-07-23 Dow Corning Corporation Silsesquioxane resins
WO2009111122A2 (en) * 2008-03-04 2009-09-11 Dow Corning Corporation Silsesquioxane resins
JP5581224B2 (ja) * 2008-03-05 2014-08-27 ダウ・コーニング・コーポレイション シルセスキオキサン樹脂
US9452446B2 (en) * 2008-04-01 2016-09-27 The Governors Of The University Of Alberta Method for depositing silicon nanocrystals in hollow fibers
US8809482B2 (en) 2008-12-10 2014-08-19 Dow Corning Corporation Silsesquioxane resins
EP2376584B1 (de) * 2008-12-10 2014-07-16 Dow Corning Corporation Nassätzbare antireflexbeschichtungen
CN108779366B (zh) * 2016-02-19 2020-09-22 美国陶氏有机硅公司 老化的聚合物型倍半硅氧烷

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4756977A (en) * 1986-12-03 1988-07-12 Dow Corning Corporation Multilayer ceramics from hydrogen silsesquioxane
US5010159A (en) * 1989-09-01 1991-04-23 Dow Corning Corporation Process for the synthesis of soluble, condensed hydridosilicon resins containing low levels of silanol
JP2538426B2 (ja) * 1991-01-31 1996-09-25 東レ・ダウコーニング・シリコーン株式会社 オルガノポリシロキサンの製造方法
EP0701121A4 (de) * 1994-03-11 1997-09-03 Kawasaki Steel Co Verfahren zur bewertung der zur erzeugung von isolationsbeschichtung verwendeten siloxane,beschichtungsflüssigkeit verwendet zur erzeugung der isolationsbeschichtung,verfahren zur herstellung der flüssigkeit,verfahren zur herstellung der isolationsbeschichtung für halbleiterbauelemente,und verfahren zur herstellung von halbleiterbauelemente durch die anwendung von obigen verfahren
US5565384A (en) * 1994-04-28 1996-10-15 Texas Instruments Inc Self-aligned via using low permittivity dielectric
JP3499032B2 (ja) * 1995-02-02 2004-02-23 ダウ コーニング アジア株式会社 放射線硬化性組成物、その硬化方法及びパターン形成方法
JP3542185B2 (ja) * 1995-02-02 2004-07-14 ダウ コーニング アジア株式会社 シリコーンレジン、これを含む組成物およびその硬化方法
JP3192947B2 (ja) * 1995-11-16 2001-07-30 東京応化工業株式会社 シリカ系被膜形成用塗布液の製造方法
JP3075168B2 (ja) * 1996-02-28 2000-08-07 富士ゼロックス株式会社 帯電部材
JPH09268228A (ja) * 1996-04-01 1997-10-14 Dow Corning Asia Ltd 紫外線硬化性組成物およびこれを用いた硬化物パターンの形成方法
US6020410A (en) * 1996-10-29 2000-02-01 Alliedsignal Inc. Stable solution of a silsesquioxane or siloxane resin and a silicone solvent
US5973095A (en) * 1997-04-21 1999-10-26 Alliedsignal, Inc. Synthesis of hydrogensilsesquioxane and organohydridosiloxane resins
AU2497600A (en) * 1999-01-07 2000-07-24 Allied-Signal Inc. Dielectric films from organohydridosiloxane resins
US6218317B1 (en) * 1999-04-19 2001-04-17 National Semiconductor Corp. Methylated oxide-type dielectric as a replacement for SiO2 hardmasks used in polymeric low K, dual damascene interconnect integration
US6281285B1 (en) * 1999-06-09 2001-08-28 Dow Corning Corporation Silicone resins and process for synthesis
US6498399B2 (en) * 1999-09-08 2002-12-24 Alliedsignal Inc. Low dielectric-constant dielectric for etchstop in dual damascene backend of integrated circuits

Also Published As

Publication number Publication date
CN1575310A (zh) 2005-02-02
US6924346B2 (en) 2005-08-02
TW574104B (en) 2004-02-01
JP4413612B2 (ja) 2010-02-10
KR20050018629A (ko) 2005-02-23
US20040186223A1 (en) 2004-09-23
ATE502974T1 (de) 2011-04-15
CN1260273C (zh) 2006-06-21
KR100898158B1 (ko) 2009-05-19
EP1442071B1 (de) 2011-03-23
EP1442071A1 (de) 2004-08-04
US20030096090A1 (en) 2003-05-22
JP2005507015A (ja) 2005-03-10
WO2003035720A1 (en) 2003-05-01

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