DE60239499D1 - Eingebettete 3D-Molehole-Crossbar-Architektur für eine elektrochemische molekulare Speichereinrichtung - Google Patents
Eingebettete 3D-Molehole-Crossbar-Architektur für eine elektrochemische molekulare SpeichereinrichtungInfo
- Publication number
- DE60239499D1 DE60239499D1 DE60239499T DE60239499T DE60239499D1 DE 60239499 D1 DE60239499 D1 DE 60239499D1 DE 60239499 T DE60239499 T DE 60239499T DE 60239499 T DE60239499 T DE 60239499T DE 60239499 D1 DE60239499 D1 DE 60239499D1
- Authority
- DE
- Germany
- Prior art keywords
- conductor
- molehole
- embedded
- storage device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004020 conductor Substances 0.000 abstract 7
- 239000004065 semiconductor Substances 0.000 abstract 4
- 238000000151 deposition Methods 0.000 abstract 3
- 239000000615 nonconductor Substances 0.000 abstract 3
- 239000012212 insulator Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/28—Electrolytic cell components
- G01N27/30—Electrodes, e.g. test electrodes; Half-cells
- G01N27/327—Biochemical electrodes, e.g. electrical or mechanical details for in vitro measurements
- G01N27/3275—Sensing specific biomolecules, e.g. nucleic acid strands, based on an electrode surface reaction
- G01N27/3278—Sensing specific biomolecules, e.g. nucleic acid strands, based on an electrode surface reaction involving nanosized elements, e.g. nanogaps or nanoparticles
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/48—Biological material, e.g. blood, urine; Haemocytometers
- G01N33/50—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
- G01N33/53—Immunoassay; Biospecific binding assay; Materials therefor
- G01N33/543—Immunoassay; Biospecific binding assay; Materials therefor with an insoluble carrier for immobilising immunochemicals
- G01N33/54366—Apparatus specially adapted for solid-phase testing
- G01N33/54373—Apparatus specially adapted for solid-phase testing involving physiochemical end-point determination, e.g. wave-guides, FETS, gratings
- G01N33/5438—Electrodes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5664—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using organic memory material storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
- G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/04—Construction or manufacture in general
- H01M10/0436—Small-sized flat cells or batteries for portable equipment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/60—Selection of substances as active materials, active masses, active liquids of organic compounds
- H01M4/602—Polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M6/00—Primary cells; Manufacture thereof
- H01M6/40—Printed batteries, e.g. thin film batteries
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/046,499 US7074519B2 (en) | 2001-10-26 | 2001-10-26 | Molehole embedded 3-D crossbar architecture used in electrochemical molecular memory device |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60239499D1 true DE60239499D1 (de) | 2011-04-28 |
Family
ID=21943785
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60239499T Expired - Lifetime DE60239499D1 (de) | 2001-10-26 | 2002-10-07 | Eingebettete 3D-Molehole-Crossbar-Architektur für eine elektrochemische molekulare Speichereinrichtung |
DE60224827T Expired - Lifetime DE60224827T2 (de) | 2001-10-26 | 2002-10-07 | Eingebettete 3d-molehole-crossbar-architektur für eine elektrochemische molekulare speichereinrichtung |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60224827T Expired - Lifetime DE60224827T2 (de) | 2001-10-26 | 2002-10-07 | Eingebettete 3d-molehole-crossbar-architektur für eine elektrochemische molekulare speichereinrichtung |
Country Status (7)
Country | Link |
---|---|
US (2) | US7074519B2 (de) |
EP (2) | EP1449218B1 (de) |
JP (1) | JP2005520348A (de) |
AT (2) | ATE502385T1 (de) |
AU (1) | AU2002367718A1 (de) |
DE (2) | DE60239499D1 (de) |
WO (1) | WO2003085752A2 (de) |
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US6958270B2 (en) * | 2002-12-17 | 2005-10-25 | North Carolina State University | Methods of fabricating crossbar array microelectronic electrochemical cells |
DE10300521A1 (de) * | 2003-01-09 | 2004-07-22 | Siemens Ag | Organoresistiver Speicher |
US7785737B2 (en) * | 2003-08-07 | 2010-08-31 | The University Of Tulsa | Electronic crossbar system for accessing arrays of nanobatteries for mass memory storage and system power |
KR100549227B1 (ko) * | 2003-09-06 | 2006-02-03 | 한국전자통신연구원 | 유기분자 소자의 제작 방법 |
US20050244811A1 (en) * | 2003-12-15 | 2005-11-03 | Nano-Proprietary, Inc. | Matrix array nanobiosensor |
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US6132685A (en) * | 1998-08-10 | 2000-10-17 | Caliper Technologies Corporation | High throughput microfluidic systems and methods |
WO2000052457A1 (en) * | 1999-03-02 | 2000-09-08 | Helix Biopharma Corporation | Card-based biosensor device |
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FR2792338B1 (fr) * | 1999-04-15 | 2001-08-10 | France Etat | Procede et dispositif de determination de l'existence d'une activite biologique de micro-organismes |
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US6324091B1 (en) | 2000-01-14 | 2001-11-27 | The Regents Of The University Of California | Tightly coupled porphyrin macrocycles for molecular memory storage |
AU764750B2 (en) * | 1999-07-01 | 2003-08-28 | North Carolina State University | High density non-volatile memory device |
TW440845B (en) * | 1999-08-11 | 2001-06-16 | Ibm | Method and system for programming FPGAs on PC-cards without additional hardware |
WO2001015800A1 (en) * | 1999-08-27 | 2001-03-08 | Picogram, Inc. | Method and device for performing operations at charged microlocations |
AU2108901A (en) * | 1999-12-15 | 2001-06-25 | Motorola, Inc. | Column and row addressable high density biochip array |
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US7348183B2 (en) * | 2000-10-16 | 2008-03-25 | Board Of Trustees Of The University Of Arkansas | Self-contained microelectrochemical bioassay platforms and methods |
US6887714B2 (en) * | 2000-10-16 | 2005-05-03 | Board Of Trustees Of The University Of Arkansas, N.A. | Microvolume immunoabsorbant assays with amplified electrochemical detection |
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-
2001
- 2001-10-26 US US10/046,499 patent/US7074519B2/en not_active Expired - Fee Related
-
2002
- 2002-10-07 DE DE60239499T patent/DE60239499D1/de not_active Expired - Lifetime
- 2002-10-07 DE DE60224827T patent/DE60224827T2/de not_active Expired - Lifetime
- 2002-10-07 AT AT08001009T patent/ATE502385T1/de not_active IP Right Cessation
- 2002-10-07 EP EP02807197A patent/EP1449218B1/de not_active Expired - Lifetime
- 2002-10-07 AU AU2002367718A patent/AU2002367718A1/en not_active Abandoned
- 2002-10-07 WO PCT/US2002/032035 patent/WO2003085752A2/en active IP Right Grant
- 2002-10-07 EP EP08001009A patent/EP1914755B1/de not_active Expired - Lifetime
- 2002-10-07 JP JP2003582835A patent/JP2005520348A/ja active Pending
- 2002-10-07 AT AT02807197T patent/ATE385031T1/de not_active IP Right Cessation
-
2005
- 2005-04-22 US US11/112,359 patent/US20060081950A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO2003085752A2 (en) | 2003-10-16 |
AU2002367718A8 (en) | 2003-10-20 |
JP2005520348A (ja) | 2005-07-07 |
WO2003085752A3 (en) | 2003-12-18 |
EP1449218A4 (de) | 2006-03-22 |
US7074519B2 (en) | 2006-07-11 |
ATE502385T1 (de) | 2011-04-15 |
EP1914755B1 (de) | 2011-03-16 |
AU2002367718A1 (en) | 2003-10-20 |
EP1914755A1 (de) | 2008-04-23 |
DE60224827D1 (de) | 2008-03-13 |
DE60224827T2 (de) | 2009-01-15 |
EP1449218B1 (de) | 2008-01-23 |
EP1449218A2 (de) | 2004-08-25 |
US20060081950A1 (en) | 2006-04-20 |
ATE385031T1 (de) | 2008-02-15 |
US20030082444A1 (en) | 2003-05-01 |
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