DE60238956D1 - MEMS-Einrichtung mit Abstandshöckern und gefaltetem Bauteil - Google Patents

MEMS-Einrichtung mit Abstandshöckern und gefaltetem Bauteil

Info

Publication number
DE60238956D1
DE60238956D1 DE60238956T DE60238956T DE60238956D1 DE 60238956 D1 DE60238956 D1 DE 60238956D1 DE 60238956 T DE60238956 T DE 60238956T DE 60238956 T DE60238956 T DE 60238956T DE 60238956 D1 DE60238956 D1 DE 60238956D1
Authority
DE
Germany
Prior art keywords
component
mems device
structural layer
folded component
folded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60238956T
Other languages
English (en)
Inventor
Dana R Dereus
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wispry Inc
Original Assignee
Wispry Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wispry Inc filed Critical Wispry Inc
Application granted granted Critical
Publication of DE60238956D1 publication Critical patent/DE60238956D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B81B3/0024Transducers for transforming thermal into mechanical energy or vice versa, e.g. thermal or bimorph actuators
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0035Constitution or structural means for controlling the movement of the flexible or deformable elements
    • B81B3/0051For defining the movement, i.e. structures that guide or limit the movement of an element
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/0015Cantilevers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00Electrostatic relays; Electro-adhesion relays
    • H01H59/0009Electrostatic relays; Electro-adhesion relays making use of micromechanics
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H61/00Electrothermal relays
    • H01H61/04Electrothermal relays wherein the thermally-sensitive member is only heated directly
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02NELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N1/00Electrostatic generators or motors using a solid moving electrostatic charge carrier
    • H02N1/002Electrostatic motors
    • H02N1/006Electrostatic motors of the gap-closing type
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02NELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N10/00Electric motors using thermal effects
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00Specific applications of microelectromechanical systems
    • B81B2201/01Switches
    • B81B2201/012Switches characterised by the shape
    • B81B2201/014Switches characterised by the shape having a cantilever fixed on one side connected to one or more dimples
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00Specific applications of microelectromechanical systems
    • B81B2201/01Switches
    • B81B2201/012Switches characterised by the shape
    • B81B2201/018Switches not provided for in B81B2201/014 - B81B2201/016
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00Basic microelectromechanical structures
    • B81B2203/01Suspended structures, i.e. structures allowing a movement
    • B81B2203/0118Cantilevers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00Basic microelectromechanical structures
    • B81B2203/04Electrodes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00Microstructural systems or auxiliary parts thereof
    • B81B2207/07Interconnects
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00Manufacture or treatment of microstructural devices or systems
    • B81C2201/01Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102Surface micromachining
    • B81C2201/0105Sacrificial layer
    • B81C2201/0107Sacrificial metal
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00Manufacture or treatment of microstructural devices or systems
    • B81C2201/01Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102Surface micromachining
    • B81C2201/0105Sacrificial layer
    • B81C2201/0108Sacrificial polymer, ashing of organics
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00Manufacture or treatment of microstructural devices or systems
    • B81C2201/01Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102Surface micromachining
    • B81C2201/0105Sacrificial layer
    • B81C2201/0109Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00Contacts
    • H01H1/02Contacts characterised by the material thereof
    • H01H1/04Co-operating contacts of different material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00Contacts
    • H01H1/50Means for increasing contact pressure, preventing vibration of contacts, holding contacts together after engagement, or biasing contacts to the open position
    • H01H1/504Means for increasing contact pressure, preventing vibration of contacts, holding contacts together after engagement, or biasing contacts to the open position by thermal means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00Contacts
    • H01H1/0036Switches making use of microelectromechanical systems [MEMS]
    • H01H2001/0042Bistable switches, i.e. having two stable positions requiring only actuating energy for switching between them, e.g. with snap membrane or by permanent magnet
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00Contacts
    • H01H1/0036Switches making use of microelectromechanical systems [MEMS]
    • H01H2001/0063Switches making use of microelectromechanical systems [MEMS] having electrostatic latches, i.e. the activated position is kept by electrostatic forces other than the activation force
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00Contacts
    • H01H1/0036Switches making use of microelectromechanical systems [MEMS]
    • H01H2001/0089Providing protection of elements to be released by etching of sacrificial element; Avoiding stiction problems, e.g. of movable element to substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00Electrostatic relays; Electro-adhesion relays
    • H01H59/0009Electrostatic relays; Electro-adhesion relays making use of micromechanics
    • H01H2059/0072Electrostatic relays; Electro-adhesion relays making use of micromechanics with stoppers or protrusions for maintaining a gap, reducing the contact area or for preventing stiction between the movable and the fixed electrode in the attracted position
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H61/00Electrothermal relays
    • H01H2061/006Micromechanical thermal relay
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49204Contact or terminal manufacturing
    • Y10T29/49208Contact or terminal manufacturing by assembling plural parts
    • Y10T29/49222Contact or terminal manufacturing by assembling plural parts forming array of contacts or terminals
DE60238956T 2001-11-09 2002-11-08 MEMS-Einrichtung mit Abstandshöckern und gefaltetem Bauteil Expired - Lifetime DE60238956D1 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US33805501P 2001-11-09 2001-11-09
US33806901P 2001-11-09 2001-11-09
US33752901P 2001-11-09 2001-11-09
US33752701P 2001-11-09 2001-11-09
US33807201P 2001-11-09 2001-11-09
US33752801P 2001-11-09 2001-11-09

Publications (1)

Publication Number Publication Date
DE60238956D1 true DE60238956D1 (de) 2011-02-24

Family

ID=27559772

Family Applications (7)

Application Number Title Priority Date Filing Date
DE60230341T Expired - Lifetime DE60230341D1 (de) 2001-11-09 2002-11-08 MEMS-Einrichtung mit dreischichtigem Strahl und diesbezügliche Verfahren
DE60215045T Expired - Lifetime DE60215045T2 (de) 2001-11-09 2002-11-08 Dreischichtige strahl-mems-einrichtung und diesbezügliche verfahren
DE60232471T Expired - Lifetime DE60232471D1 (de) 2001-11-09 2002-11-08 Dreischichtige Strahl-MEMS-Einrichtung und diesbezügliche Verfahren
DE60217924T Expired - Lifetime DE60217924T2 (de) 2001-11-09 2002-11-08 Mems-einrichtung mit kontakt und abstandshöckern und damit zusammenhängende verfahren
DE60222468T Expired - Lifetime DE60222468T2 (de) 2001-11-09 2002-11-08 Mems-einrichtung mit dreischichtigem biegebalken und diesbezügliche verfahren
DE60229675T Expired - Lifetime DE60229675D1 (de) 2001-11-09 2002-11-08 Dreischichtige Strahl-MEMS-Einrichtung und diesbezügliche Verfahren
DE60238956T Expired - Lifetime DE60238956D1 (de) 2001-11-09 2002-11-08 MEMS-Einrichtung mit Abstandshöckern und gefaltetem Bauteil

Family Applications Before (6)

Application Number Title Priority Date Filing Date
DE60230341T Expired - Lifetime DE60230341D1 (de) 2001-11-09 2002-11-08 MEMS-Einrichtung mit dreischichtigem Strahl und diesbezügliche Verfahren
DE60215045T Expired - Lifetime DE60215045T2 (de) 2001-11-09 2002-11-08 Dreischichtige strahl-mems-einrichtung und diesbezügliche verfahren
DE60232471T Expired - Lifetime DE60232471D1 (de) 2001-11-09 2002-11-08 Dreischichtige Strahl-MEMS-Einrichtung und diesbezügliche Verfahren
DE60217924T Expired - Lifetime DE60217924T2 (de) 2001-11-09 2002-11-08 Mems-einrichtung mit kontakt und abstandshöckern und damit zusammenhängende verfahren
DE60222468T Expired - Lifetime DE60222468T2 (de) 2001-11-09 2002-11-08 Mems-einrichtung mit dreischichtigem biegebalken und diesbezügliche verfahren
DE60229675T Expired - Lifetime DE60229675D1 (de) 2001-11-09 2002-11-08 Dreischichtige Strahl-MEMS-Einrichtung und diesbezügliche Verfahren

Country Status (7)

Country Link
US (9) US6847114B2 (de)
EP (9) EP1454349B1 (de)
CN (3) CN100550429C (de)
AT (8) ATE495538T1 (de)
AU (3) AU2002363529A1 (de)
DE (7) DE60230341D1 (de)
WO (6) WO2003042721A2 (de)

Families Citing this family (313)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6853067B1 (en) 1999-10-12 2005-02-08 Microassembly Technologies, Inc. Microelectromechanical systems using thermocompression bonding
US20020096421A1 (en) * 2000-11-29 2002-07-25 Cohn Michael B. MEMS device with integral packaging
JP3651671B2 (ja) * 2001-08-30 2005-05-25 株式会社東芝 マイクロメカニカルスイッチ及びその製造方法
US7132736B2 (en) * 2001-10-31 2006-11-07 Georgia Tech Research Corporation Devices having compliant wafer-level packages with pillars and methods of fabrication
EP1454349B1 (de) * 2001-11-09 2006-09-27 WiSpry, Inc. Dreischichtige strahl-mems-einrichtung und diesbezügliche verfahren
US7521366B2 (en) * 2001-12-12 2009-04-21 Lg Display Co., Ltd. Manufacturing method of electro line for liquid crystal display device
US7045459B2 (en) * 2002-02-19 2006-05-16 Northrop Grumman Corporation Thin film encapsulation of MEMS devices
US7763947B2 (en) * 2002-04-23 2010-07-27 Sharp Laboratories Of America, Inc. Piezo-diode cantilever MEMS
US7135777B2 (en) * 2002-05-03 2006-11-14 Georgia Tech Research Corporation Devices having compliant wafer-level input/output interconnections and packages using pillars and methods of fabrication thereof
US7002225B2 (en) * 2002-05-24 2006-02-21 Northrup Grumman Corporation Compliant component for supporting electrical interface component
US6777258B1 (en) * 2002-06-28 2004-08-17 Silicon Light Machines, Inc. Conductive etch stop for etching a sacrificial layer
US7064637B2 (en) * 2002-07-18 2006-06-20 Wispry, Inc. Recessed electrode for electrostatically actuated structures
US7551048B2 (en) * 2002-08-08 2009-06-23 Fujitsu Component Limited Micro-relay and method of fabricating the same
EP1394554B1 (de) * 2002-08-30 2011-11-02 STMicroelectronics Srl Herstellungsverfahren für einen Grenzbeschleunigungsaufnehmer
US20040121505A1 (en) * 2002-09-30 2004-06-24 Magfusion, Inc. Method for fabricating a gold contact on a microswitch
US7053736B2 (en) * 2002-09-30 2006-05-30 Teravicta Technologies, Inc. Microelectromechanical device having an active opening switch
US7317232B2 (en) * 2002-10-22 2008-01-08 Cabot Microelectronics Corporation MEM switching device
US6835589B2 (en) * 2002-11-14 2004-12-28 International Business Machines Corporation Three-dimensional integrated CMOS-MEMS device and process for making the same
US6800503B2 (en) * 2002-11-20 2004-10-05 International Business Machines Corporation MEMS encapsulated structure and method of making same
US7498911B2 (en) * 2003-02-26 2009-03-03 Memtronics Corporation Membrane switch components and designs
WO2004079795A2 (en) 2003-03-04 2004-09-16 Rohm And Haas Electronic Materials, L.L.C. Coaxial waveguide microstructures and methods of formation thereof
US6720267B1 (en) * 2003-03-19 2004-04-13 United Microelectronics Corp. Method for forming a cantilever beam model micro-electromechanical system
NL1023275C2 (nl) * 2003-04-25 2004-10-27 Cavendish Kinetics Ltd Werkwijze voor het vervaardigen van een micro-mechanisch element.
CA2429909A1 (en) * 2003-05-27 2004-11-27 Cognos Incorporated Transformation of tabular and cross-tabulated queries based upon e/r schema into multi-dimensional expression queries
DE10325564B4 (de) * 2003-06-05 2008-12-18 Infineon Technologies Ag Chipkartenmodul
US7061022B1 (en) * 2003-08-26 2006-06-13 United States Of America As Represented By The Secretary Of The Army Lateral heat spreading layers for epi-side up ridge waveguide semiconductor lasers
JP4823478B2 (ja) * 2003-09-19 2011-11-24 株式会社半導体エネルギー研究所 発光装置の作製方法
US7520790B2 (en) * 2003-09-19 2009-04-21 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of display device
US7388459B2 (en) * 2003-10-28 2008-06-17 Medtronic, Inc. MEMs switching circuit and method for an implantable medical device
US7283024B2 (en) * 2003-12-18 2007-10-16 Intel Corporation MEMS switch stopper bumps with adjustable height
GB0330010D0 (en) 2003-12-24 2004-01-28 Cavendish Kinetics Ltd Method for containing a device and a corresponding device
US7142087B2 (en) * 2004-01-27 2006-11-28 Lucent Technologies Inc. Micromechanical latching switch
US7352266B2 (en) * 2004-02-20 2008-04-01 Wireless Mems, Inc. Head electrode region for a reliable metal-to-metal contact micro-relay MEMS switch
US7265299B2 (en) * 2004-03-04 2007-09-04 Au Optronics Corporation Method for reducing voltage drop across metal lines of electroluminescence display devices
US20050244099A1 (en) * 2004-03-24 2005-11-03 Pasch Nicholas F Cantilevered micro-electromechanical switch array
US7362199B2 (en) * 2004-03-31 2008-04-22 Intel Corporation Collapsible contact switch
FR2868591B1 (fr) * 2004-04-06 2006-06-09 Commissariat Energie Atomique Microcommutateur a faible tension d'actionnement et faible consommation
US7476327B2 (en) * 2004-05-04 2009-01-13 Idc, Llc Method of manufacture for microelectromechanical devices
DE102004026654B4 (de) * 2004-06-01 2009-07-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Mikromechanisches HF-Schaltelement sowie Verfahren zur Herstellung
US7749792B2 (en) * 2004-06-02 2010-07-06 Carnegie Mellon University Self-assembling MEMS devices having thermal actuation
US20060055499A1 (en) * 2004-09-16 2006-03-16 Bolle Cristian A Fuse arrangement
US7630119B2 (en) 2004-09-27 2009-12-08 Qualcomm Mems Technologies, Inc. Apparatus and method for reducing slippage between structures in an interferometric modulator
US7417783B2 (en) * 2004-09-27 2008-08-26 Idc, Llc Mirror and mirror layer for optical modulator and method
US7420725B2 (en) 2004-09-27 2008-09-02 Idc, Llc Device having a conductive light absorbing mask and method for fabricating same
US7527995B2 (en) 2004-09-27 2009-05-05 Qualcomm Mems Technologies, Inc. Method of making prestructure for MEMS systems
US7372613B2 (en) 2004-09-27 2008-05-13 Idc, Llc Method and device for multistate interferometric light modulation
US7944599B2 (en) 2004-09-27 2011-05-17 Qualcomm Mems Technologies, Inc. Electromechanical device with optical function separated from mechanical and electrical function
US7369296B2 (en) 2004-09-27 2008-05-06 Idc, Llc Device and method for modifying actuation voltage thresholds of a deformable membrane in an interferometric modulator
US7564612B2 (en) 2004-09-27 2009-07-21 Idc, Llc Photonic MEMS and structures
US7289259B2 (en) 2004-09-27 2007-10-30 Idc, Llc Conductive bus structure for interferometric modulator array
US20060065622A1 (en) * 2004-09-27 2006-03-30 Floyd Philip D Method and system for xenon fluoride etching with enhanced efficiency
US7583429B2 (en) 2004-09-27 2009-09-01 Idc, Llc Ornamental display device
US7304784B2 (en) * 2004-09-27 2007-12-04 Idc, Llc Reflective display device having viewable display on both sides
US7936497B2 (en) 2004-09-27 2011-05-03 Qualcomm Mems Technologies, Inc. MEMS device having deformable membrane characterized by mechanical persistence
US8008736B2 (en) 2004-09-27 2011-08-30 Qualcomm Mems Technologies, Inc. Analog interferometric modulator device
US7193492B2 (en) * 2004-09-29 2007-03-20 Lucent Technologies Inc. Monolithic MEMS device having a balanced cantilever plate
US7239064B1 (en) * 2004-10-15 2007-07-03 Morgan Research Corporation Resettable latching MEMS temperature sensor apparatus and method
KR100619110B1 (ko) * 2004-10-21 2006-09-04 한국전자통신연구원 미세전자기계적 스위치 및 그 제조 방법
US7230513B2 (en) * 2004-11-20 2007-06-12 Wireless Mems, Inc. Planarized structure for a reliable metal-to-metal contact micro-relay MEMS switch
TWI252838B (en) * 2004-12-02 2006-04-11 Delta Electronics Inc Micro-switch
US7446628B2 (en) * 2004-12-09 2008-11-04 Wispry, Inc. Pole-zero elements and related systems and methods
US7521784B2 (en) * 2004-12-17 2009-04-21 Hewlett-Packard Development Company, L.P. System for coupling wire to semiconductor region
KR100661176B1 (ko) * 2004-12-17 2006-12-26 삼성전자주식회사 Mems 스위치 및 그 제조 방법
US7391090B2 (en) * 2004-12-17 2008-06-24 Hewlett-Packard Development Company, L.P. Systems and methods for electrically coupling wires and conductors
US7597819B1 (en) * 2004-12-20 2009-10-06 Sandia Corporation Redox buffered hydrofluoric acid etchant for the reduction of galvanic attack during release etching of MEMS devices having noble material films
TWI287634B (en) * 2004-12-31 2007-10-01 Wen-Chang Dung Micro-electromechanical probe circuit film, method for making the same and applications thereof
US7235750B1 (en) 2005-01-31 2007-06-26 United States Of America As Represented By The Secretary Of The Air Force Radio frequency MEMS switch contact metal selection
US7601554B1 (en) 2005-01-31 2009-10-13 The United States Of America As Represented By The Secretary Of The Air Force Shaped MEMS contact
US7655996B1 (en) * 2005-02-03 2010-02-02 The United States Of America As Represented By The Secretary Of The Army MEMS structure support and release mechanism
US7404167B2 (en) 2005-02-23 2008-07-22 Taiwan Semiconductor Manufacturing Company, Ltd. Method for improving design window
JP4707424B2 (ja) * 2005-03-18 2011-06-22 株式会社東芝 可変容量素子および可変容量装置ならびに可変容量装置を用いた携帯電話
ATE525738T1 (de) * 2005-03-18 2011-10-15 Reseaux Mems Mems-aktuatoren und -schalter
JP4498181B2 (ja) * 2005-03-22 2010-07-07 東京エレクトロン株式会社 スイッチアレイ
US7322856B2 (en) * 2005-03-31 2008-01-29 Molex Incorporated High-density, robust connector
DE102005016243B3 (de) 2005-04-08 2006-09-28 Austriamicrosystems Ag Mikromechanisches Bauelement, Verfahren zur Herstellung und Verwendung
FR2885735B1 (fr) * 2005-05-10 2007-08-03 St Microelectronics Sa Circuit integre guide d'ondes
US7692521B1 (en) * 2005-05-12 2010-04-06 Microassembly Technologies, Inc. High force MEMS device
US7884989B2 (en) * 2005-05-27 2011-02-08 Qualcomm Mems Technologies, Inc. White interferometric modulators and methods for forming the same
US7321275B2 (en) * 2005-06-23 2008-01-22 Intel Corporation Ultra-low voltage capable zipper switch
JP4489651B2 (ja) * 2005-07-22 2010-06-23 株式会社日立製作所 半導体装置およびその製造方法
EP2495212A3 (de) * 2005-07-22 2012-10-31 QUALCOMM MEMS Technologies, Inc. MEMS-Vorrichtungen mit Stützstrukturen und Herstellungsverfahren dafür
US7612635B2 (en) * 2005-08-03 2009-11-03 Kolo Technologies, Inc. MEMS acoustic filter and fabrication of the same
US20070040637A1 (en) * 2005-08-19 2007-02-22 Yee Ian Y K Microelectromechanical switches having mechanically active components which are electrically isolated from components of the switch used for the transmission of signals
US7528691B2 (en) * 2005-08-26 2009-05-05 Innovative Micro Technology Dual substrate electrostatic MEMS switch with hermetic seal and method of manufacture
US7960208B2 (en) * 2005-08-26 2011-06-14 Innovative Micro Technology Wafer level hermetic bond using metal alloy with raised feature
US7582969B2 (en) * 2005-08-26 2009-09-01 Innovative Micro Technology Hermetic interconnect structure and method of manufacture
US8736081B2 (en) 2005-08-26 2014-05-27 Innovative Micro Technology Wafer level hermetic bond using metal alloy with keeper layer
US20070048887A1 (en) * 2005-08-26 2007-03-01 Innovative Micro Technology Wafer level hermetic bond using metal alloy
US7569926B2 (en) * 2005-08-26 2009-08-04 Innovative Micro Technology Wafer level hermetic bond using metal alloy with raised feature
US7233048B2 (en) * 2005-08-26 2007-06-19 Innovative Micro Technology MEMS device trench plating process and apparatus for through hole vias
US20070090474A1 (en) * 2005-09-08 2007-04-26 Li Gary G MEMS device and method of fabrication
US20080094149A1 (en) * 2005-09-22 2008-04-24 Sungsung Electronics Co., Ltd. Power amplifier matching circuit and method using tunable mems devices
US7332980B2 (en) * 2005-09-22 2008-02-19 Samsung Electronics Co., Ltd. System and method for a digitally tunable impedance matching network
US7580172B2 (en) * 2005-09-30 2009-08-25 Qualcomm Mems Technologies, Inc. MEMS device and interconnects for same
KR100827314B1 (ko) * 2005-10-10 2008-05-06 삼성전기주식회사 열처리에 의해 평탄면을 가지는 멤스 소자 및 광변조기제조 방법
US8043950B2 (en) * 2005-10-26 2011-10-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7630114B2 (en) * 2005-10-28 2009-12-08 Idc, Llc Diffusion barrier layer for MEMS devices
US20070096860A1 (en) * 2005-11-02 2007-05-03 Innovative Micro Technology Compact MEMS thermal device and method of manufacture
KR100744543B1 (ko) * 2005-12-08 2007-08-01 한국전자통신연구원 미세전자기계적 구조 스위치 및 그 제조방법
US8066462B2 (en) * 2005-12-12 2011-11-29 Telezygology, Inc. Development in beam type fasteners
JP5399075B2 (ja) * 2005-12-22 2014-01-29 エプコス アクチエンゲゼルシャフト 直列接続されたキャパシタを有するmemsデバイス装置
US7602261B2 (en) * 2005-12-22 2009-10-13 Intel Corporation Micro-electromechanical system (MEMS) switch
US7525151B2 (en) * 2006-01-05 2009-04-28 International Rectifier Corporation Vertical DMOS device in integrated circuit
FR2895986B1 (fr) * 2006-01-06 2008-09-05 Centre Nat Rech Scient Preparation de microcomposants multicouches par la methode de la couche epaisse sacrificielle
US20070196048A1 (en) * 2006-01-12 2007-08-23 Almantas Galvanauskas Optical waveform shaping
US7916980B2 (en) 2006-01-13 2011-03-29 Qualcomm Mems Technologies, Inc. Interconnect structure for MEMS device
US7382515B2 (en) 2006-01-18 2008-06-03 Qualcomm Mems Technologies, Inc. Silicon-rich silicon nitrides as etch stops in MEMS manufacture
US7678601B2 (en) * 2006-01-20 2010-03-16 Texas Instruments Incorporated Method of forming an acceleration sensor
US20070170528A1 (en) * 2006-01-20 2007-07-26 Aaron Partridge Wafer encapsulated microelectromechanical structure and method of manufacturing same
US7671693B2 (en) * 2006-02-17 2010-03-02 Samsung Electronics Co., Ltd. System and method for a tunable impedance matching network
US7480432B2 (en) * 2006-02-28 2009-01-20 Corning Incorporated Glass-based micropositioning systems and methods
US7463113B2 (en) * 2006-02-28 2008-12-09 Motorla, Inc. Apparatus and methods relating to electrically conductive path interfaces disposed within capacitor plate openings
EP1999772B1 (de) * 2006-03-08 2020-05-06 Wispry, Inc. Variabler micro-elektromechanischer mems kondensator
US7710045B2 (en) * 2006-03-17 2010-05-04 3M Innovative Properties Company Illumination assembly with enhanced thermal conductivity
US7711239B2 (en) 2006-04-19 2010-05-04 Qualcomm Mems Technologies, Inc. Microelectromechanical device and method utilizing nanoparticles
US7554421B2 (en) * 2006-05-16 2009-06-30 Intel Corporation Micro-electromechanical system (MEMS) trampoline switch/varactor
GB0610392D0 (en) 2006-05-25 2006-07-05 Univ Durham Electro-mechanical actuator and apparatus incorporating such device
US7649671B2 (en) 2006-06-01 2010-01-19 Qualcomm Mems Technologies, Inc. Analog interferometric modulator device with electrostatic actuation and release
US7605675B2 (en) * 2006-06-20 2009-10-20 Intel Corporation Electromechanical switch with partially rigidified electrode
US7835061B2 (en) * 2006-06-28 2010-11-16 Qualcomm Mems Technologies, Inc. Support structures for free-standing electromechanical devices
US7527998B2 (en) 2006-06-30 2009-05-05 Qualcomm Mems Technologies, Inc. Method of manufacturing MEMS devices providing air gap control
US7911010B2 (en) * 2006-07-17 2011-03-22 Kwj Engineering, Inc. Apparatus and method for microfabricated multi-dimensional sensors and sensing systems
JP4234737B2 (ja) * 2006-07-24 2009-03-04 株式会社東芝 Memsスイッチ
JP4265630B2 (ja) * 2006-08-04 2009-05-20 セイコーエプソン株式会社 Memsスイッチ、電圧分割回路、利得調整回路、減衰器及びmemsスイッチの製造方法
CN101501805B (zh) * 2006-08-09 2012-07-04 皇家飞利浦电子股份有限公司 微机电器件及其驱动方法
US7495368B2 (en) * 2006-08-31 2009-02-24 Evigia Systems, Inc. Bimorphic structures, sensor structures formed therewith, and methods therefor
US7688167B2 (en) * 2006-10-12 2010-03-30 Innovative Micro Technology Contact electrode for microdevices and etch method of manufacture
US7684106B2 (en) 2006-11-02 2010-03-23 Qualcomm Mems Technologies, Inc. Compatible MEMS switch architecture
JP5085101B2 (ja) * 2006-11-17 2012-11-28 オリンパス株式会社 可変分光素子
WO2008064216A2 (en) * 2006-11-20 2008-05-29 Massachusetts Institute Of Technology Micro-electro mechanical tunneling switch
CN101188159B (zh) * 2006-11-24 2011-01-12 阎跃军 分段可调电感器
US8222087B2 (en) 2006-12-19 2012-07-17 HGST Netherlands, B.V. Seed layer for a heat spreader in a magnetic recording head
US7706042B2 (en) 2006-12-20 2010-04-27 Qualcomm Mems Technologies, Inc. MEMS device and interconnects for same
KR100840644B1 (ko) * 2006-12-29 2008-06-24 동부일렉트로닉스 주식회사 스위칭 소자 및 그 제조 방법
EP1939137B1 (de) * 2006-12-30 2016-08-24 Nuvotronics, LLC Dreidimensionale Mikrostrukturen und Herstellungsverfahren dafür
JP4916893B2 (ja) * 2007-01-05 2012-04-18 株式会社日本マイクロニクス プローブの製造方法
US7400015B1 (en) * 2007-01-15 2008-07-15 International Business Machines Corporation Semiconductor structure with field shield and method of forming the structure
US8115987B2 (en) 2007-02-01 2012-02-14 Qualcomm Mems Technologies, Inc. Modulating the intensity of light from an interferometric reflector
KR20090125087A (ko) * 2007-02-20 2009-12-03 퀄컴 엠이엠스 테크놀로지스, 인크. 마이크로전자기계 시스템〔mems〕의 에칭장치 및 에칭 방법
US20080197964A1 (en) * 2007-02-21 2008-08-21 Simpler Networks Inc. Mems actuators and switches
KR101593686B1 (ko) 2007-03-20 2016-02-12 누보트로닉스, 엘.엘.씨 일체화된 전자 요소들 및 이들의 형성 방법
KR101472134B1 (ko) 2007-03-20 2014-12-15 누보트로닉스, 엘.엘.씨 동축 전송선 마이크로구조물 및 그의 형성방법
CN101652317B (zh) * 2007-04-04 2012-12-12 高通Mems科技公司 通过牺牲层中的界面修改来消除释放蚀刻侵蚀
US7643202B2 (en) 2007-05-09 2010-01-05 Qualcomm Mems Technologies, Inc. Microelectromechanical system having a dielectric movable membrane and a mirror
US7719752B2 (en) 2007-05-11 2010-05-18 Qualcomm Mems Technologies, Inc. MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same
US7992294B2 (en) * 2007-05-25 2011-08-09 Molex Incorporated Method of manufacturing an interconnect device which forms a heat sink and electrical connections between a heat generating device and a power source
US8102638B2 (en) * 2007-06-13 2012-01-24 The University Court Of The University Of Edinburgh Micro electromechanical capacitive switch
US7625825B2 (en) * 2007-06-14 2009-12-01 Qualcomm Mems Technologies, Inc. Method of patterning mechanical layer for MEMS structures
US7630121B2 (en) 2007-07-02 2009-12-08 Qualcomm Mems Technologies, Inc. Electromechanical device with optical function separated from mechanical and electrical function
US8068268B2 (en) 2007-07-03 2011-11-29 Qualcomm Mems Technologies, Inc. MEMS devices having improved uniformity and methods for making them
US8310016B2 (en) * 2007-07-17 2012-11-13 Kwj Engineering, Inc. Apparatus and method for microfabricated multi-dimensional sensors and sensing systems
EP2183782B1 (de) * 2007-07-23 2017-12-27 Wispry, Inc. Mehrschichtbalken und zugehöriges Herstellungsverfahren
CN101755232A (zh) 2007-07-25 2010-06-23 高通Mems科技公司 微机电系统显示器装置及其制造方法
JP2010538306A (ja) 2007-07-31 2010-12-09 クォルコム・メムズ・テクノロジーズ・インコーポレーテッド 干渉変調器の色ずれを高めるためのデバイス
US8154378B2 (en) * 2007-08-10 2012-04-10 Alcatel Lucent Thermal actuator for a MEMS-based relay switch
US7847999B2 (en) 2007-09-14 2010-12-07 Qualcomm Mems Technologies, Inc. Interferometric modulator display devices
CN101802985A (zh) * 2007-09-14 2010-08-11 高通Mems科技公司 用于微机电系统生产的蚀刻工艺
DE112008002554B4 (de) * 2007-10-15 2018-05-09 Epcos Ag Verfahren zur Herstellung eines MEMS-Elements auf einem Substrat
TW200919593A (en) * 2007-10-18 2009-05-01 Asia Pacific Microsystems Inc Elements and modules with micro caps and wafer level packaging method thereof
KR20100090257A (ko) 2007-10-19 2010-08-13 퀄컴 엠이엠스 테크놀로지스, 인크. 광기전력 소자가 통합된 디스플레이
US8058549B2 (en) 2007-10-19 2011-11-15 Qualcomm Mems Technologies, Inc. Photovoltaic devices with integrated color interferometric film stacks
US8054527B2 (en) 2007-10-23 2011-11-08 Qualcomm Mems Technologies, Inc. Adjustably transmissive MEMS-based devices
US8941631B2 (en) 2007-11-16 2015-01-27 Qualcomm Mems Technologies, Inc. Simultaneous light collection and illumination on an active display
US20090140433A1 (en) * 2007-11-30 2009-06-04 Alces Technology, Inc. MEMS chip-to-chip interconnects
WO2009079460A1 (en) * 2007-12-14 2009-06-25 University Of Florida Research Foundation, Inc. Electrothermal microactuator for large vertical displacement without tilt or lateral shift
US7609136B2 (en) * 2007-12-20 2009-10-27 General Electric Company MEMS microswitch having a conductive mechanical stop
WO2009079780A1 (en) * 2007-12-21 2009-07-02 The Royal Institution For The Advancement Of Learning/Mcgill University Low temperature ceramic microelectromechanical structures
US7863079B2 (en) 2008-02-05 2011-01-04 Qualcomm Mems Technologies, Inc. Methods of reducing CD loss in a microelectromechanical device
US8199020B1 (en) * 2008-02-11 2012-06-12 The United States Of America As Represented By The Secretary Of The Army Thermal cutoff fuse for arbitrary temperatures
US7989262B2 (en) * 2008-02-22 2011-08-02 Cavendish Kinetics, Ltd. Method of sealing a cavity
US8164821B2 (en) * 2008-02-22 2012-04-24 Qualcomm Mems Technologies, Inc. Microelectromechanical device with thermal expansion balancing layer or stiffening layer
US7944604B2 (en) 2008-03-07 2011-05-17 Qualcomm Mems Technologies, Inc. Interferometric modulator in transmission mode
US7612933B2 (en) 2008-03-27 2009-11-03 Qualcomm Mems Technologies, Inc. Microelectromechanical device with spacing layer
EP2107038B1 (de) * 2008-03-31 2012-05-16 Imec Elektrostatisch betätigbare MEMS-Vorrichtung mit verringerter Substrataufladung
US7898723B2 (en) 2008-04-02 2011-03-01 Qualcomm Mems Technologies, Inc. Microelectromechanical systems display element with photovoltaic structure
US7969638B2 (en) 2008-04-10 2011-06-28 Qualcomm Mems Technologies, Inc. Device having thin black mask and method of fabricating the same
TW201000910A (en) * 2008-04-21 2010-01-01 Top Eng Co Ltd Card for MEMS probe and method for manufacturing thereof
US8451077B2 (en) 2008-04-22 2013-05-28 International Business Machines Corporation MEMS switches with reduced switching voltage and methods of manufacture
US7993950B2 (en) * 2008-04-30 2011-08-09 Cavendish Kinetics, Ltd. System and method of encapsulation
US8023191B2 (en) * 2008-05-07 2011-09-20 Qualcomm Mems Technologies, Inc. Printable static interferometric images
US7956759B1 (en) 2008-05-13 2011-06-07 The United States Of America As Represented By The Secretary Of The Army Humidity sensitive cutoff fuse
US8023167B2 (en) 2008-06-25 2011-09-20 Qualcomm Mems Technologies, Inc. Backlight displays
US8174352B2 (en) * 2008-06-26 2012-05-08 Cornell University Method for making a transducer, transducer made therefrom, and applications thereof
US7859740B2 (en) 2008-07-11 2010-12-28 Qualcomm Mems Technologies, Inc. Stiction mitigation with integrated mech micro-cantilevers through vertical stress gradient control
US7977635B2 (en) * 2008-08-08 2011-07-12 Oliver Edwards Radiant energy imager using null switching
US7855826B2 (en) * 2008-08-12 2010-12-21 Qualcomm Mems Technologies, Inc. Method and apparatus to reduce or eliminate stiction and image retention in interferometric modulator devices
US8358266B2 (en) 2008-09-02 2013-01-22 Qualcomm Mems Technologies, Inc. Light turning device with prismatic light turning features
US20110169517A1 (en) * 2008-09-05 2011-07-14 Kim Sang-Hee Mems probe card and method of manufacturing same
ITTO20080714A1 (it) * 2008-09-30 2010-04-01 St Microelectronics Srl Dispositivo microelettromeccanico provvisto di una struttura antiadesione e relativo metodo di antiadesione
WO2010061363A2 (en) 2008-11-26 2010-06-03 Freescale Semiconductor, Inc. Electromechanical transducer device and method of forming a electromechanical transducer device
WO2010061364A2 (en) 2008-11-26 2010-06-03 Freescale Semiconductor, Inc. Electromechanical transducer device and method of forming a electromechanical transducer device
US8257119B2 (en) 2008-12-19 2012-09-04 Honeywell International Systems and methods for affixing a silicon device to a support structure
US8445306B2 (en) 2008-12-24 2013-05-21 International Business Machines Corporation Hybrid MEMS RF switch and method of fabricating same
US8957485B2 (en) * 2009-01-21 2015-02-17 Cavendish Kinetics, Ltd. Fabrication of MEMS based cantilever switches by employing a split layer cantilever deposition scheme
US8270056B2 (en) 2009-03-23 2012-09-18 Qualcomm Mems Technologies, Inc. Display device with openings between sub-pixels and method of making same
US8877648B2 (en) * 2009-03-26 2014-11-04 Semprius, Inc. Methods of forming printable integrated circuit devices by selective etching to suspend the devices from a handling substrate and devices formed thereby
JP5187441B2 (ja) * 2009-04-24 2013-04-24 株式会社村田製作所 Mems素子およびその製造方法
FR2946036B1 (fr) * 2009-05-26 2011-11-25 Thales Sa Procede d'integration de micro-interrupteurs de type mems sur des substrats en gan comportant des composants electroniques de puissance
WO2010138763A1 (en) 2009-05-29 2010-12-02 Qualcomm Mems Technologies, Inc. Illumination devices and methods of fabrication thereof
JP2010284748A (ja) * 2009-06-11 2010-12-24 Toshiba Corp 電気部品
EP2449670B1 (de) 2009-06-29 2015-01-21 Freescale Semiconductor, Inc. Verfahren zur formung einer elektromechanischen wandlervorrichtung
JP2011017626A (ja) * 2009-07-09 2011-01-27 Sony Corp 力学量検知部材及び力学量検知装置
TWM378928U (en) * 2009-07-29 2010-04-21 Pixart Imaging Inc Mems device and spring element of mems
JP5398411B2 (ja) * 2009-08-10 2014-01-29 株式会社東芝 マイクロ可動デバイスおよびマイクロ可動デバイスの製造方法
US8138007B2 (en) * 2009-08-26 2012-03-20 Freescale Semiconductor, Inc. MEMS device with stress isolation and method of fabrication
US8569091B2 (en) * 2009-08-27 2013-10-29 International Business Machines Corporation Integrated circuit switches, design structure and methods of fabricating the same
US8270062B2 (en) 2009-09-17 2012-09-18 Qualcomm Mems Technologies, Inc. Display device with at least one movable stop element
US20110063068A1 (en) * 2009-09-17 2011-03-17 The George Washington University Thermally actuated rf microelectromechanical systems switch
US8779886B2 (en) * 2009-11-30 2014-07-15 General Electric Company Switch structures
US8826529B2 (en) 2009-09-23 2014-09-09 General Electric Company Method of forming a micro-electromechanical system device
US8354899B2 (en) 2009-09-23 2013-01-15 General Electric Company Switch structure and method
US8488228B2 (en) 2009-09-28 2013-07-16 Qualcomm Mems Technologies, Inc. Interferometric display with interferometric reflector
US20110123783A1 (en) * 2009-11-23 2011-05-26 David Sherrer Multilayer build processses and devices thereof
CN102086017B (zh) * 2009-12-03 2014-11-26 原相科技股份有限公司 微机电元件及微机电弹簧元件
CN102110616B (zh) * 2009-12-25 2012-09-05 华东光电集成器件研究所 一种在ltcc基板上实现薄膜多层布线的方法
US8237263B2 (en) * 2009-12-31 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for cooling an integrated circuit
CN102741958B (zh) * 2010-01-15 2016-09-14 维斯普瑞公司 装有弹簧的mems悬臂可调电容器及方法
KR101067214B1 (ko) * 2010-04-07 2011-09-22 삼성전기주식회사 인쇄회로기판 및 그 제조방법
CN102834761A (zh) 2010-04-09 2012-12-19 高通Mems科技公司 机电装置的机械层及其形成方法
CN101814866B (zh) * 2010-04-16 2012-08-01 大连理工大学 一种电热驱动微结构的制作方法
US20110269295A1 (en) * 2010-04-30 2011-11-03 Hopper Peter J Method of Forming a Semiconductor Wafer that Provides Galvanic Isolation
US8709264B2 (en) 2010-06-25 2014-04-29 International Business Machines Corporation Planar cavity MEMS and related structures, methods of manufacture and design structures
JP5667391B2 (ja) * 2010-08-11 2015-02-12 日本電波工業株式会社 ディスク型mems振動子
FR2963784B1 (fr) * 2010-08-11 2012-08-31 Univ Limoges Microsystemes electromecaniques a gaps d'air.
WO2012024238A1 (en) 2010-08-17 2012-02-23 Qualcomm Mems Technologies, Inc. Actuation and calibration of a charge neutral electrode in an interferometric display device
US9057872B2 (en) 2010-08-31 2015-06-16 Qualcomm Mems Technologies, Inc. Dielectric enhanced mirror for IMOD display
DE102010047128A1 (de) * 2010-09-30 2012-04-05 Infineon Technologies Ag Hallsensoranordnung zum redundanten Messen eines Magnetfeldes
KR20120064364A (ko) * 2010-12-09 2012-06-19 삼성전자주식회사 태양 전지의 제조 방법
US8735200B2 (en) * 2010-12-13 2014-05-27 Sagnik Pal Fabrication of robust electrothermal MEMS with fast thermal response
US9221677B2 (en) * 2010-12-20 2015-12-29 Rf Micro Devices, Inc. Composite sacrificial structure for reliably creating a contact gap in a MEMS switch
US20120174572A1 (en) * 2011-01-10 2012-07-12 Donato Clausi Method for mechanical and electrical integration of sma wires to microsystems
US8171800B1 (en) * 2011-01-25 2012-05-08 Continental Automotive Systems, Inc. Differential pressure sensor using dual backside absolute pressure sensing
US8962443B2 (en) * 2011-01-31 2015-02-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Semiconductor device having an airbridge and method of fabricating the same
US8963159B2 (en) 2011-04-04 2015-02-24 Qualcomm Mems Technologies, Inc. Pixel via and methods of forming the same
US9134527B2 (en) 2011-04-04 2015-09-15 Qualcomm Mems Technologies, Inc. Pixel via and methods of forming the same
US8531192B2 (en) * 2011-04-15 2013-09-10 Robert Bosch Gmbh High-impedance MEMS switch
US8659816B2 (en) 2011-04-25 2014-02-25 Qualcomm Mems Technologies, Inc. Mechanical layer and methods of making the same
US8866300B1 (en) 2011-06-05 2014-10-21 Nuvotronics, Llc Devices and methods for solder flow control in three-dimensional microstructures
US8814601B1 (en) 2011-06-06 2014-08-26 Nuvotronics, Llc Batch fabricated microconnectors
CN103732526B (zh) * 2011-06-07 2016-04-06 维斯普瑞公司 用于在集成了cmos的mems电容性器件中优化电流密度的系统和方法
US8973250B2 (en) * 2011-06-20 2015-03-10 International Business Machines Corporation Methods of manufacturing a micro-electro-mechanical system (MEMS) structure
US9120667B2 (en) 2011-06-20 2015-09-01 International Business Machines Corporation Micro-electro-mechanical system (MEMS) and related actuator bumps, methods of manufacture and design structures
US8643140B2 (en) * 2011-07-11 2014-02-04 United Microelectronics Corp. Suspended beam for use in MEMS device
EP2731783A4 (de) 2011-07-13 2016-03-09 Nuvotronics Llc Verfahren zur herstellung von elektronischen und mechanischen strukturen
CN102367165B (zh) * 2011-08-31 2015-01-21 华东光电集成器件研究所 一种基于soi的mems器件电极互连方法
CN102423258B (zh) * 2011-09-20 2013-12-25 上海交通大学 基于mems技术的无线传输可植入对称结构压力传感器
US20130106875A1 (en) * 2011-11-02 2013-05-02 Qualcomm Mems Technologies, Inc. Method of improving thin-film encapsulation for an electromechanical systems assembly
US8736939B2 (en) 2011-11-04 2014-05-27 Qualcomm Mems Technologies, Inc. Matching layer thin-films for an electromechanical systems reflective display device
US9349558B2 (en) * 2011-12-06 2016-05-24 Palo Alto Research Center Incorporated Mechanically acuated heat switch
FR2984010B1 (fr) * 2011-12-09 2014-01-03 St Microelectronics Rousset Dispositif capacitif integre ayant une valeur capacitive thermiquement variable
FR2984013B1 (fr) 2011-12-09 2014-01-10 St Microelectronics Rousset Dispositif mecanique de commutation electrique integre possedant un etat bloque
US8673670B2 (en) 2011-12-15 2014-03-18 International Business Machines Corporation Micro-electro-mechanical system (MEMS) structures and design structures
US20130181893A1 (en) * 2012-01-13 2013-07-18 Qualcomm Mems Technologies, Inc. Electrostatically transduced sensors composed of photochemically etched glass
FR2988712B1 (fr) 2012-04-02 2014-04-11 St Microelectronics Rousset Circuit integre equipe d'un dispositif de detection de son orientation spatiale et/ou d'un changement de cette orientation.
US8748999B2 (en) * 2012-04-20 2014-06-10 Taiwan Semiconductor Manufacturing Company, Ltd. Capacitive sensors and methods for forming the same
EP2842165A4 (de) * 2012-04-26 2015-10-14 Hewlett Packard Development Co Nichtlineare anpassbare elektrische vorrichtungen
US8569115B1 (en) 2012-07-06 2013-10-29 LuxVue Technology Corporation Method of forming a compliant bipolar micro device transfer head with silicon electrodes
WO2014008110A1 (en) * 2012-07-06 2014-01-09 LuxVue Technology Corporation Compliant bipolar micro device transfer head with silicon electrodes
US9162878B2 (en) 2012-08-30 2015-10-20 Innovative Micro Technology Wafer level hermetic bond using metal alloy with raised feature and wetting layer
US9325044B2 (en) 2013-01-26 2016-04-26 Nuvotronics, Inc. Multi-layer digital elliptic filter and method
JP6105304B2 (ja) * 2013-01-31 2017-03-29 ルネサスエレクトロニクス株式会社 インダクタ装置及び半導体装置
US9306254B1 (en) 2013-03-15 2016-04-05 Nuvotronics, Inc. Substrate-free mechanical interconnection of electronic sub-systems using a spring configuration
US9306255B1 (en) 2013-03-15 2016-04-05 Nuvotronics, Inc. Microstructure including microstructural waveguide elements and/or IC chips that are mechanically interconnected to each other
US9233832B2 (en) 2013-05-10 2016-01-12 Globalfoundries Inc. Micro-electro-mechanical system (MEMS) structures and design structures
US9911563B2 (en) * 2013-07-31 2018-03-06 Analog Devices Global MEMS switch device and method of fabrication
FR3009653B1 (fr) * 2013-08-09 2015-08-07 Commissariat Energie Atomique Dispositif de conversion d'energie thermique en energie electrique
FR3012671B1 (fr) 2013-10-29 2015-11-13 St Microelectronics Rousset Dispositif mecanique integre a mouvement vertical
US9162868B2 (en) 2013-11-27 2015-10-20 Infineon Technologies Ag MEMS device
US10310009B2 (en) 2014-01-17 2019-06-04 Nuvotronics, Inc Wafer scale test interface unit and contactors
WO2015109532A1 (zh) * 2014-01-24 2015-07-30 吉瑞高新科技股份有限公司 电池座、电子烟及电子烟的雾化控制方法
US9796578B2 (en) * 2014-03-10 2017-10-24 Apple Inc. Microelectromechanical systems devices with improved reliability
US9385306B2 (en) 2014-03-14 2016-07-05 The United States Of America As Represented By The Secretary Of The Army Ferroelectric mechanical memory and method
US10640362B2 (en) 2014-04-01 2020-05-05 Wispry, Inc. Systems, devices, and methods for reducing surface dielectric charging in a RF MEMS actuator element
EP2937311B1 (de) * 2014-04-25 2019-08-21 Rolex Sa Herstellungsverfahren einer verstärkten uhrkomponente, entsprechende uhrkomponente und entsprechende uhr
US9274277B2 (en) 2014-05-15 2016-03-01 Globalfoundries Inc. Waveguide devices with supporting anchors
FR3022691B1 (fr) 2014-06-23 2016-07-01 Stmicroelectronics Rousset Dispositif capacitif commandable integre
CN105428256B (zh) * 2014-07-30 2018-07-20 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法和电子装置
CN105366624B (zh) * 2014-07-30 2017-06-13 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法和电子装置
EP3201123A4 (de) * 2014-10-03 2018-05-23 Wispry, Inc. Systeme, vorrichtungen und verfahren zur reduzierung von dielektrischer aufladung in mikro-elektromechanischen systemvorrichtungen
US10132699B1 (en) * 2014-10-06 2018-11-20 National Technology & Engineering Solutions Of Sandia, Llc Electrodeposition processes for magnetostrictive resonators
US10847469B2 (en) 2016-04-26 2020-11-24 Cubic Corporation CTE compensation for wafer-level and chip-scale packages and assemblies
US10511073B2 (en) 2014-12-03 2019-12-17 Cubic Corporation Systems and methods for manufacturing stacked circuits and transmission lines
US9466452B1 (en) 2015-03-31 2016-10-11 Stmicroelectronics, Inc. Integrated cantilever switch
FR3034567B1 (fr) 2015-03-31 2017-04-28 St Microelectronics Rousset Dispositif metallique a piece(s) mobile(s) ameliore loge dans une cavite de la partie d'interconnexion (" beol ") d'un circuit integre
US9971970B1 (en) 2015-04-27 2018-05-15 Rigetti & Co, Inc. Microwave integrated quantum circuits with VIAS and methods for making the same
WO2017019557A1 (en) * 2015-07-24 2017-02-02 Trustees Of Boston University Mems devices for smart lighting applications
CN108883927B (zh) * 2016-02-29 2023-06-13 密歇根大学董事会 制造三维微结构器件的方法
CN109154697B (zh) 2016-05-20 2020-11-10 镁可微波技术有限公司 半导体激光器和用于使半导体激光器平坦化的方法
US20180079640A1 (en) * 2016-09-22 2018-03-22 Innovative Micro Technology Mems device with offset electrode
CN107917750B (zh) * 2016-10-08 2020-06-26 北京大学 一种mems热式声粒子传感器
CN107915280B (zh) * 2016-10-11 2020-05-26 青岛经济技术开发区海尔热水器有限公司 一种双循环模式的水吧系统
DE102016122525B4 (de) * 2016-11-22 2019-09-19 Infineon Technologies Ag Sensorbauelemente eines mikroelektronischen Systems
US10996125B2 (en) * 2017-05-17 2021-05-04 Infineon Technologies Ag Pressure sensors and method for forming a MEMS pressure sensor
US11276727B1 (en) 2017-06-19 2022-03-15 Rigetti & Co, Llc Superconducting vias for routing electrical signals through substrates and their methods of manufacture
US11121301B1 (en) 2017-06-19 2021-09-14 Rigetti & Co, Inc. Microwave integrated quantum circuits with cap wafers and their methods of manufacture
US11170984B2 (en) * 2017-07-24 2021-11-09 Spark Thermionics, Inc. Small gap device system and method of fabrication
JP6842386B2 (ja) * 2017-08-31 2021-03-17 キオクシア株式会社 半導体装置
US11385108B2 (en) * 2017-11-02 2022-07-12 Nextinput, Inc. Sealed force sensor with etch stop layer
US10720338B1 (en) 2017-11-07 2020-07-21 Honeywell Federal Manufacturing & Technologies, Llc Low temperature cofired ceramic substrates and fabrication techniques for the same
US10319654B1 (en) 2017-12-01 2019-06-11 Cubic Corporation Integrated chip scale packages
US11040871B2 (en) * 2017-12-14 2021-06-22 Invensense, Inc. Device comprising a micro-electro-mechanical system substrate with protrusions of different heights that has been integrated with a complementary metal-oxide-semiconductor substrate
US11464140B2 (en) 2019-12-06 2022-10-04 Frore Systems Inc. Centrally anchored MEMS-based active cooling systems
US10943850B2 (en) 2018-08-10 2021-03-09 Frore Systems Inc. Piezoelectric MEMS-based active cooling for heat dissipation in compute devices
GB201815797D0 (en) 2018-09-27 2018-11-14 Sofant Tech Ltd Mems devices and circuits including same
US10793422B2 (en) * 2018-12-17 2020-10-06 Vanguard International Semiconductor Singapore Pte. Ltd. Microelectromechanical systems packages and methods for packaging a microelectromechanical systems device
TWI708424B (zh) * 2019-07-04 2020-10-21 國家中山科學研究院 直接平貼式主動頻率選擇表面之開關元件與其製作方法
CN114586479A (zh) 2019-10-30 2022-06-03 福珞尔系统公司 基于mems的气流系统
US11510341B2 (en) * 2019-12-06 2022-11-22 Frore Systems Inc. Engineered actuators usable in MEMs active cooling devices
US11796262B2 (en) 2019-12-06 2023-10-24 Frore Systems Inc. Top chamber cavities for center-pinned actuators
CN113336187A (zh) * 2020-02-14 2021-09-03 绍兴中芯集成电路制造股份有限公司 Mems器件封装方法及封装结构
US11765863B2 (en) 2020-10-02 2023-09-19 Frore Systems Inc. Active heat sink
US20230068451A1 (en) * 2021-08-30 2023-03-02 Texas Instruments Incorporated Methods and apparatus to thermally actuate microelectromechanical structures devices
WO2023059519A2 (en) * 2021-10-04 2023-04-13 Formfactor, Inc. Thermal management techniques for high power integrated circuits operating in dry cryogenic environments

Family Cites Families (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2095911B (en) * 1981-03-17 1985-02-13 Standard Telephones Cables Ltd Electrical switch device
US4423401A (en) * 1982-07-21 1983-12-27 Tektronix, Inc. Thin-film electrothermal device
US5025346A (en) * 1989-02-17 1991-06-18 Regents Of The University Of California Laterally driven resonant microstructures
US5376772A (en) * 1990-08-31 1994-12-27 The Pilot Ink Co., Ltd. Electrothermal instrument with heat generating element of sintered BaTiO3 in contact with heat transmitting member
JP2804196B2 (ja) * 1991-10-18 1998-09-24 株式会社日立製作所 マイクロセンサ及びそれを用いた制御システム
US5479042A (en) * 1993-02-01 1995-12-26 Brooktree Corporation Micromachined relay and method of forming the relay
US5824186A (en) * 1993-12-17 1998-10-20 The Regents Of The University Of California Method and apparatus for fabricating self-assembling microstructures
US5662771A (en) * 1994-12-01 1997-09-02 Analog Devices, Inc. Surface micromachining process
US5619177A (en) * 1995-01-27 1997-04-08 Mjb Company Shape memory alloy microactuator having an electrostatic force and heating means
US5597643A (en) * 1995-03-13 1997-01-28 Hestia Technologies, Inc. Multi-tier laminate substrate with internal heat spreader
US5629794A (en) * 1995-05-31 1997-05-13 Texas Instruments Incorporated Spatial light modulator having an analog beam for steering light
US5578976A (en) * 1995-06-22 1996-11-26 Rockwell International Corporation Micro electromechanical RF switch
US5717631A (en) * 1995-07-21 1998-02-10 Carnegie Mellon University Microelectromechanical structure and process of making same
GB2304918B (en) * 1995-08-30 1999-05-19 Daewoo Electronics Co Ltd Method for manufacturing a thin film actuated mirror having a stable elastic member
US5920391A (en) * 1995-10-27 1999-07-06 Schlumberger Industries, S.A. Tunable Fabry-Perot filter for determining gas concentration
US5638946A (en) * 1996-01-11 1997-06-17 Northeastern University Micromechanical switch with insulated switch contact
JPH09232465A (ja) * 1996-02-27 1997-09-05 Fuji Kiko Denshi Kk 半導体実装用プリント配線板
US5914801A (en) * 1996-09-27 1999-06-22 Mcnc Microelectromechanical devices including rotating plates and related methods
US5994816A (en) * 1996-12-16 1999-11-30 Mcnc Thermal arched beam microelectromechanical devices and associated fabrication methods
US5796152A (en) * 1997-01-24 1998-08-18 Roxburgh Ltd. Cantilevered microstructure
US6232847B1 (en) * 1997-04-28 2001-05-15 Rockwell Science Center, Llc Trimmable singleband and tunable multiband integrated oscillator using micro-electromechanical system (MEMS) technology
US5870007A (en) * 1997-06-16 1999-02-09 Roxburgh Ltd. Multi-dimensional physical actuation of microstructures
JP4240575B2 (ja) 1998-05-15 2009-03-18 ヤマハ株式会社 楽音合成方法、記録媒体および楽音合成装置
US6046659A (en) * 1998-05-15 2000-04-04 Hughes Electronics Corporation Design and fabrication of broadband surface-micromachined micro-electro-mechanical switches for microwave and millimeter-wave applications
US6154176A (en) * 1998-08-07 2000-11-28 Sarnoff Corporation Antennas formed using multilayer ceramic substrates
ES2248865T3 (es) * 1998-08-14 2006-03-16 Renata Ag Cortacircuitos y bateria que comporta este cortacircuitos.
US6040611A (en) * 1998-09-10 2000-03-21 Hughes Electonics Corporation Microelectromechanical device
JP2000188049A (ja) * 1998-12-22 2000-07-04 Nec Corp マイクロマシンスイッチおよびその製造方法
US6316278B1 (en) * 1999-03-16 2001-11-13 Alien Technology Corporation Methods for fabricating a multiple modular assembly
US6236300B1 (en) * 1999-03-26 2001-05-22 R. Sjhon Minners Bistable micro-switch and method of manufacturing the same
US6229683B1 (en) * 1999-06-30 2001-05-08 Mcnc High voltage micromachined electrostatic switch
US6057520A (en) * 1999-06-30 2000-05-02 Mcnc Arc resistant high voltage micromachined electrostatic switch
US6175170B1 (en) * 1999-09-10 2001-01-16 Sridhar Kota Compliant displacement-multiplying apparatus for microelectromechanical systems
US6211598B1 (en) * 1999-09-13 2001-04-03 Jds Uniphase Inc. In-plane MEMS thermal actuator and associated fabrication methods
US6307452B1 (en) * 1999-09-16 2001-10-23 Motorola, Inc. Folded spring based micro electromechanical (MEM) RF switch
US6310339B1 (en) * 1999-10-28 2001-10-30 Hrl Laboratories, Llc Optically controlled MEM switches
US6396368B1 (en) * 1999-11-10 2002-05-28 Hrl Laboratories, Llc CMOS-compatible MEM switches and method of making
US6535318B1 (en) * 1999-11-12 2003-03-18 Jds Uniphase Corporation Integrated optoelectronic devices having pop-up mirrors therein and methods of forming and operating same
EP1153405B1 (de) * 1999-12-10 2006-09-13 Koninklijke Philips Electronics N.V. Elektronische geräte mit mikromechanischen schaltern
US6229684B1 (en) * 1999-12-15 2001-05-08 Jds Uniphase Inc. Variable capacitor and associated fabrication method
US6367251B1 (en) * 2000-04-05 2002-04-09 Jds Uniphase Corporation Lockable microelectromechanical actuators using thermoplastic material, and methods of operating same
US6275325B1 (en) * 2000-04-07 2001-08-14 Microsoft Corporation Thermally activated microelectromechanical systems actuator
US6580170B2 (en) * 2000-06-22 2003-06-17 Texas Instruments Incorporated Semiconductor device protective overcoat with enhanced adhesion to polymeric materials
US6630367B1 (en) * 2000-08-01 2003-10-07 Hrl Laboratories, Llc Single crystal dual wafer, tunneling sensor and a method of making same
US6555404B1 (en) * 2000-08-01 2003-04-29 Hrl Laboratories, Llc Method of manufacturing a dual wafer tunneling gyroscope
US6708491B1 (en) * 2000-09-12 2004-03-23 3M Innovative Properties Company Direct acting vertical thermal actuator
US6531947B1 (en) * 2000-09-12 2003-03-11 3M Innovative Properties Company Direct acting vertical thermal actuator with controlled bending
US6483056B2 (en) * 2000-10-27 2002-11-19 Daniel J Hyman Microfabricated relay with multimorph actuator and electrostatic latch mechanism
US6504118B2 (en) * 2000-10-27 2003-01-07 Daniel J Hyman Microfabricated double-throw relay with multimorph actuator and electrostatic latch mechanism
US6538798B2 (en) * 2000-12-11 2003-03-25 Axsun Technologies, Inc. Process for fabricating stiction control bumps on optical membrane via conformal coating of etch holes
US6583374B2 (en) * 2001-02-20 2003-06-24 Rockwell Automation Technologies, Inc. Microelectromechanical system (MEMS) digital electrical isolator
US7280014B2 (en) * 2001-03-13 2007-10-09 Rochester Institute Of Technology Micro-electro-mechanical switch and a method of using and making thereof
US6522452B2 (en) * 2001-04-26 2003-02-18 Jds Uniphase Corporation Latchable microelectromechanical structures using non-newtonian fluids, and methods of operating same
US20020162685A1 (en) * 2001-05-07 2002-11-07 Jeffrey Gotro Thermal dissipating printed circuit board and methods
US6664885B2 (en) * 2001-08-31 2003-12-16 Adc Telecommunications, Inc. Thermally activated latch
EP1454349B1 (de) 2001-11-09 2006-09-27 WiSpry, Inc. Dreischichtige strahl-mems-einrichtung und diesbezügliche verfahren

Also Published As

Publication number Publication date
DE60215045T2 (de) 2007-03-29
US20040188785A1 (en) 2004-09-30
US20030116417A1 (en) 2003-06-26
ATE432240T1 (de) 2009-06-15
ATE417021T1 (de) 2008-12-15
DE60229675D1 (de) 2008-12-11
US6876047B2 (en) 2005-04-05
DE60217924T2 (de) 2007-08-02
CN1695233A (zh) 2005-11-09
US6847114B2 (en) 2005-01-25
DE60215045D1 (de) 2006-11-09
EP1454349A4 (de) 2005-03-16
EP1454349A2 (de) 2004-09-08
CN100550429C (zh) 2009-10-14
ATE341098T1 (de) 2006-10-15
WO2003042721A3 (en) 2003-11-13
US20070158775A1 (en) 2007-07-12
EP1760746B1 (de) 2011-01-12
EP1454333A4 (de) 2005-09-21
DE60222468D1 (de) 2007-10-25
CN1613128A (zh) 2005-05-04
US20030119221A1 (en) 2003-06-26
EP1454333B1 (de) 2007-09-12
WO2003040338A2 (en) 2003-05-15
EP1454349B1 (de) 2006-09-27
DE60217924D1 (de) 2007-03-15
US20040197960A1 (en) 2004-10-07
WO2003041133A3 (en) 2003-09-12
EP1461816B1 (de) 2007-01-24
US20030116851A1 (en) 2003-06-26
CN1292447C (zh) 2006-12-27
WO2003043038A2 (en) 2003-05-22
WO2003043042A1 (en) 2003-05-22
AU2002363529A1 (en) 2003-05-19
EP1461816A2 (de) 2004-09-29
EP1461816A4 (de) 2005-03-30
WO2003040338A3 (en) 2003-10-02
US6876482B2 (en) 2005-04-05
ATE412611T1 (de) 2008-11-15
ATE524412T1 (de) 2011-09-15
CN100474519C (zh) 2009-04-01
EP1717195A1 (de) 2006-11-02
US20040012298A1 (en) 2004-01-22
EP1760746A2 (de) 2007-03-07
EP1760036B1 (de) 2012-06-13
EP1717194A1 (de) 2006-11-02
US8420427B2 (en) 2013-04-16
EP1760036A1 (de) 2007-03-07
WO2003043044A1 (en) 2003-05-22
WO2003043038A3 (en) 2004-07-15
ATE495538T1 (de) 2011-01-15
CN1613154A (zh) 2005-05-04
US6917086B2 (en) 2005-07-12
US20030116848A1 (en) 2003-06-26
DE60232471D1 (de) 2009-07-09
EP1760746A3 (de) 2007-03-14
WO2003042721A2 (en) 2003-05-22
EP1721866B1 (de) 2008-12-10
EP1721866A1 (de) 2006-11-15
AU2002359369A1 (en) 2003-05-26
US6882264B2 (en) 2005-04-19
EP1717193B1 (de) 2008-10-29
ATE372955T1 (de) 2007-09-15
EP1454333A1 (de) 2004-09-08
EP1717195B1 (de) 2011-09-14
EP1717194B1 (de) 2009-05-27
DE60230341D1 (de) 2009-01-22
EP1717193A1 (de) 2006-11-02
WO2003041133A2 (en) 2003-05-15
DE60222468T2 (de) 2008-06-12
US6746891B2 (en) 2004-06-08
US20030117257A1 (en) 2003-06-26
AU2002359370A1 (en) 2003-05-26
US8264054B2 (en) 2012-09-11
ATE352854T1 (de) 2007-02-15

Similar Documents

Publication Publication Date Title
DE60238956D1 (de) MEMS-Einrichtung mit Abstandshöckern und gefaltetem Bauteil
EP2315289A3 (de) Musterung von Anordnungen mittels Laser
WO2004055919A3 (en) Electronic devices
DE60141748D1 (de) Statisches relais und dieses verwendendes kommunikationsgerät
TWI267112B (en) Microstructure devices, methods of forming a microstructure device and a method of forming a MEMS device
DE69816463D1 (de) Beschleunigungsmesser mittels beweglichem plattenelement mit elektrostatischer rückkopplung
WO2004013900A3 (en) System and method for manufacturing embedded conformal electronics
ATE433200T1 (de) Organisches elektrolumineszenzbauelement und herstellungsverfahren dafür
WO2005065207A3 (en) Microelectronic packages and methods therefor
ATE434839T1 (de) Varactorvorrichtungen und verfahren
DE50102741D1 (de) Behälter mit strukturierten flüssigkeitsabweisenden und flüssigkeitsbenetzenden teilbereichen der inneren oberfläche
WO2006008702A3 (en) A flexible display device
ATE277415T1 (de) Keramikbauteil und herstellungsverfahren
ATE442061T1 (de) Fliebbandanfertigung von zigarettenfiltern mit ausnehmungen
DE50208156D1 (de) Elektrokeramisches bauelement
ATE408241T1 (de) Elektronische einrichtung
ATE518250T1 (de) Metallbasis-nanodraht-transistor
ATE376257T1 (de) Piezoaktor
WO2005062950A3 (en) Meso-microelectromechanical system having a glass beam and method for its fabrication
RU2007136349A (ru) Уплотняющее кольцевое устройство
DE50310933D1 (de) Beschichtungsmaterial
TW200520177A (en) Assembly and adhesive layer for semiconductor components
ES1046737Y (es) Dispositivo para delimitar el recorrido de un circuito.
ATE344438T1 (de) Lagesensorvorrichtung
JPS52147979A (en) Semiconductor device