DE60238641D1 - Cluster-kapselung von leuchtdioden - Google Patents
Cluster-kapselung von leuchtdiodenInfo
- Publication number
- DE60238641D1 DE60238641D1 DE60238641T DE60238641T DE60238641D1 DE 60238641 D1 DE60238641 D1 DE 60238641D1 DE 60238641 T DE60238641 T DE 60238641T DE 60238641 T DE60238641 T DE 60238641T DE 60238641 D1 DE60238641 D1 DE 60238641D1
- Authority
- DE
- Germany
- Prior art keywords
- light emitting
- emitting diodes
- score lines
- diodes
- cluster capture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
- Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
- Illuminated Signs And Luminous Advertising (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/058,369 US6635503B2 (en) | 2002-01-28 | 2002-01-28 | Cluster packaging of light emitting diodes |
| PCT/US2002/033315 WO2003065457A2 (en) | 2002-01-28 | 2002-10-18 | Cluster packaging of light emitting diodes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE60238641D1 true DE60238641D1 (de) | 2011-01-27 |
Family
ID=27609572
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60238641T Expired - Lifetime DE60238641D1 (de) | 2002-01-28 | 2002-10-18 | Cluster-kapselung von leuchtdioden |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US6635503B2 (de) |
| EP (1) | EP1470591B1 (de) |
| JP (1) | JP4489436B2 (de) |
| KR (1) | KR100923485B1 (de) |
| CN (1) | CN1938855A (de) |
| AT (1) | ATE492032T1 (de) |
| AU (1) | AU2002335082A1 (de) |
| CA (1) | CA2473722A1 (de) |
| DE (1) | DE60238641D1 (de) |
| MY (1) | MY129737A (de) |
| TW (1) | TWI253764B (de) |
| WO (1) | WO2003065457A2 (de) |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7858403B2 (en) | 2001-10-31 | 2010-12-28 | Cree, Inc. | Methods and systems for fabricating broad spectrum light emitting devices |
| US7009199B2 (en) * | 2002-10-22 | 2006-03-07 | Cree, Inc. | Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current |
| US6885033B2 (en) * | 2003-03-10 | 2005-04-26 | Cree, Inc. | Light emitting devices for light conversion and methods and semiconductor chips for fabricating the same |
| US7005679B2 (en) | 2003-05-01 | 2006-02-28 | Cree, Inc. | Multiple component solid state white light |
| WO2005048363A2 (en) * | 2003-11-12 | 2005-05-26 | Cree, Inc. | Methods of processing semiconductor wafer backsides having light emitting devices (leds) thereon and leds so formed |
| US8174037B2 (en) | 2004-09-22 | 2012-05-08 | Cree, Inc. | High efficiency group III nitride LED with lenticular surface |
| US8513686B2 (en) * | 2004-09-22 | 2013-08-20 | Cree, Inc. | High output small area group III nitride LEDs |
| US7259402B2 (en) * | 2004-09-22 | 2007-08-21 | Cree, Inc. | High efficiency group III nitride-silicon carbide light emitting diode |
| US7737459B2 (en) * | 2004-09-22 | 2010-06-15 | Cree, Inc. | High output group III nitride light emitting diodes |
| US7432536B2 (en) | 2004-11-04 | 2008-10-07 | Cree, Inc. | LED with self aligned bond pad |
| US8288942B2 (en) * | 2004-12-28 | 2012-10-16 | Cree, Inc. | High efficacy white LED |
| KR20090009772A (ko) | 2005-12-22 | 2009-01-23 | 크리 엘이디 라이팅 솔루션즈, 인크. | 조명 장치 |
| KR20080106402A (ko) | 2006-01-05 | 2008-12-05 | 일루미텍스, 인크. | Ｌｅｄ로부터 광을 유도하기 위한 개별 광학 디바이스 |
| US8998444B2 (en) | 2006-04-18 | 2015-04-07 | Cree, Inc. | Solid state lighting devices including light mixtures |
| US7821194B2 (en) | 2006-04-18 | 2010-10-26 | Cree, Inc. | Solid state lighting devices including light mixtures |
| JP2009538532A (ja) | 2006-05-23 | 2009-11-05 | クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド | 照明装置 |
| EP2029936B1 (de) | 2006-05-31 | 2015-07-29 | Cree, Inc. | Beleuchtungsvorrichtung und beleuchtungsverfahren |
| WO2008042351A2 (en) | 2006-10-02 | 2008-04-10 | Illumitex, Inc. | Led system and method |
| US9318327B2 (en) | 2006-11-28 | 2016-04-19 | Cree, Inc. | Semiconductor devices having low threading dislocations and improved light extraction and methods of making the same |
| US9391118B2 (en) * | 2007-01-22 | 2016-07-12 | Cree, Inc. | Fault tolerant light emitters, systems incorporating fault tolerant light emitters and methods of fabricating fault tolerant light emitters |
| US10586787B2 (en) * | 2007-01-22 | 2020-03-10 | Cree, Inc. | Illumination devices using externally interconnected arrays of light emitting devices, and methods of fabricating same |
| US20080198572A1 (en) | 2007-02-21 | 2008-08-21 | Medendorp Nicholas W | LED lighting systems including luminescent layers on remote reflectors |
| US7863635B2 (en) | 2007-08-07 | 2011-01-04 | Cree, Inc. | Semiconductor light emitting devices with applied wavelength conversion materials |
| US20090108269A1 (en) * | 2007-10-26 | 2009-04-30 | Led Lighting Fixtures, Inc. | Illumination device having one or more lumiphors, and methods of fabricating same |
| EP2240968A1 (de) | 2008-02-08 | 2010-10-20 | Illumitex, Inc. | System und verfahren zur bildung einer emitterschicht |
| US8350461B2 (en) | 2008-03-28 | 2013-01-08 | Cree, Inc. | Apparatus and methods for combining light emitters |
| US7955875B2 (en) * | 2008-09-26 | 2011-06-07 | Cree, Inc. | Forming light emitting devices including custom wavelength conversion structures |
| TW201034256A (en) | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
| US8333631B2 (en) | 2009-02-19 | 2012-12-18 | Cree, Inc. | Methods for combining light emitting devices in a package and packages including combined light emitting devices |
| US7967652B2 (en) | 2009-02-19 | 2011-06-28 | Cree, Inc. | Methods for combining light emitting devices in a package and packages including combined light emitting devices |
| US8921876B2 (en) | 2009-06-02 | 2014-12-30 | Cree, Inc. | Lighting devices with discrete lumiphor-bearing regions within or on a surface of remote elements |
| US8449128B2 (en) | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
| US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
| EP2480816A1 (de) | 2009-09-25 | 2012-08-01 | Cree, Inc. | Beleuchtungsvorrichtung mit geringem blendeffekt und hoher lichtstärkenuniformität |
| US9435493B2 (en) | 2009-10-27 | 2016-09-06 | Cree, Inc. | Hybrid reflector system for lighting device |
| US9275979B2 (en) | 2010-03-03 | 2016-03-01 | Cree, Inc. | Enhanced color rendering index emitter through phosphor separation |
| US8684559B2 (en) | 2010-06-04 | 2014-04-01 | Cree, Inc. | Solid state light source emitting warm light with high CRI |
| US8556469B2 (en) | 2010-12-06 | 2013-10-15 | Cree, Inc. | High efficiency total internal reflection optic for solid state lighting luminaires |
| US11251164B2 (en) | 2011-02-16 | 2022-02-15 | Creeled, Inc. | Multi-layer conversion material for down conversion in solid state lighting |
| CN104241262B (zh) | 2013-06-14 | 2020-11-06 | 惠州科锐半导体照明有限公司 | 发光装置以及显示装置 |
| US20190221728A1 (en) * | 2018-01-17 | 2019-07-18 | Epistar Corporation | Light-emitting device and the manufacturing method thereof |
Family Cites Families (51)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3343026A (en) * | 1963-11-27 | 1967-09-19 | H P Associates | Semi-conductive radiation source |
| US4476620A (en) * | 1979-10-19 | 1984-10-16 | Matsushita Electric Industrial Co., Ltd. | Method of making a gallium nitride light-emitting diode |
| US4396929A (en) | 1979-10-19 | 1983-08-02 | Matsushita Electric Industrial Company, Ltd. | Gallium nitride light-emitting element and method of manufacturing the same |
| JPS5680182A (en) * | 1979-12-05 | 1981-07-01 | Mitsubishi Electric Corp | Luminous diode |
| JPS56130980A (en) * | 1980-03-17 | 1981-10-14 | Sanyo Electric Co Ltd | Manufacture of solid state display unit |
| JPS56131977A (en) | 1980-03-19 | 1981-10-15 | Sanyo Electric Co Ltd | Manufacture of gan light emitting diode |
| JPS60136788A (ja) * | 1983-12-26 | 1985-07-20 | 日本ビクター株式会社 | Ｌｅｄ平面パネルデイスプレイの製作法 |
| JPH01225377A (ja) | 1988-03-04 | 1989-09-08 | Mitsubishi Cable Ind Ltd | Ｌｅｄアレイ |
| JPH01280368A (ja) * | 1988-05-06 | 1989-11-10 | Sharp Corp | 化合物半導体発光素子 |
| US5187547A (en) | 1988-05-18 | 1993-02-16 | Sanyo Electric Co., Ltd. | Light emitting diode device and method for producing same |
| JP2704181B2 (ja) | 1989-02-13 | 1998-01-26 | 日本電信電話株式会社 | 化合物半導体単結晶薄膜の成長方法 |
| US5087949A (en) | 1989-06-27 | 1992-02-11 | Hewlett-Packard Company | Light-emitting diode with diagonal faces |
| US4966862A (en) * | 1989-08-28 | 1990-10-30 | Cree Research, Inc. | Method of production of light emitting diodes |
| US5210051A (en) | 1990-03-27 | 1993-05-11 | Cree Research, Inc. | High efficiency light emitting diodes from bipolar gallium nitride |
| JP3160914B2 (ja) | 1990-12-26 | 2001-04-25 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体レーザダイオード |
| US5459337A (en) * | 1993-02-19 | 1995-10-17 | Sony Corporation | Semiconductor display device with red, green and blue emission |
| DE69433926T2 (de) | 1993-04-28 | 2005-07-21 | Nichia Corp., Anan | Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung |
| US5416342A (en) | 1993-06-23 | 1995-05-16 | Cree Research, Inc. | Blue light-emitting diode with high external quantum efficiency |
| US5393993A (en) | 1993-12-13 | 1995-02-28 | Cree Research, Inc. | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
| US5523589A (en) | 1994-09-20 | 1996-06-04 | Cree Research, Inc. | Vertical geometry light emitting diode with group III nitride active layer and extended lifetime |
| US5631190A (en) | 1994-10-07 | 1997-05-20 | Cree Research, Inc. | Method for producing high efficiency light-emitting diodes and resulting diode structures |
| KR100268567B1 (ko) * | 1994-10-11 | 2000-10-16 | 포만 제프리 엘 | 다중 파장으로 광을 발생시키기 위한 발광 다이오드의 모놀리식 어레이 및 이를 사용한 멀티 컬러 디스플레이 |
| JPH0982587A (ja) | 1995-09-08 | 1997-03-28 | Hewlett Packard Co <Hp> | 非方形電子チップの製造方法 |
| US5917202A (en) | 1995-12-21 | 1999-06-29 | Hewlett-Packard Company | Highly reflective contacts for light emitting semiconductor devices |
| US5718760A (en) | 1996-02-05 | 1998-02-17 | Cree Research, Inc. | Growth of colorless silicon carbide crystals |
| US5779924A (en) | 1996-03-22 | 1998-07-14 | Hewlett-Packard Company | Ordered interface texturing for a light emitting device |
| JP3239774B2 (ja) * | 1996-09-20 | 2001-12-17 | 豊田合成株式会社 | ３族窒化物半導体発光素子の基板分離方法 |
| JPH10256604A (ja) | 1997-03-11 | 1998-09-25 | Rohm Co Ltd | 半導体発光素子 |
| JPH10275936A (ja) * | 1997-03-28 | 1998-10-13 | Rohm Co Ltd | 半導体発光素子の製法 |
| JP3769872B2 (ja) | 1997-05-06 | 2006-04-26 | ソニー株式会社 | 半導体発光素子 |
| US6121637A (en) | 1997-10-03 | 2000-09-19 | Rohm Co., Ltd. | Semiconductor light emitting device with increased luminous power |
| US5952681A (en) | 1997-11-24 | 1999-09-14 | Chen; Hsing | Light emitting diode emitting red, green and blue light |
| EP0926744B8 (de) | 1997-12-15 | 2008-05-21 | Philips Lumileds Lighting Company, LLC. | Licht-emittierende Vorrichtung |
| CH689339A5 (de) * | 1998-02-12 | 1999-02-26 | Staufert Gerhard | Konfektionierbares LED-Leuchpaneel. |
| US6091085A (en) | 1998-02-19 | 2000-07-18 | Agilent Technologies, Inc. | GaN LEDs with improved output coupling efficiency |
| US6046465A (en) | 1998-04-17 | 2000-04-04 | Hewlett-Packard Company | Buried reflectors for light emitters in epitaxial material and method for producing same |
| JPH11340576A (ja) | 1998-05-28 | 1999-12-10 | Sumitomo Electric Ind Ltd | 窒化ガリウム系半導体デバイス |
| US6097041A (en) | 1998-08-24 | 2000-08-01 | Kingmax Technology Inc. | Light-emitting diode with anti-reflector |
| KR100269540B1 (ko) * | 1998-08-28 | 2000-10-16 | 윤종용 | 웨이퍼 상태에서의 칩 스케일 패키지 제조 방법 |
| US6169294B1 (en) | 1998-09-08 | 2001-01-02 | Epistar Co. | Inverted light emitting diode |
| US6229120B1 (en) | 1998-11-12 | 2001-05-08 | Hewlett-Packard Company | Controlling the power dissipation of a fixing device |
| US6177688B1 (en) | 1998-11-24 | 2001-01-23 | North Carolina State University | Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates |
| JP2000195827A (ja) | 1998-12-25 | 2000-07-14 | Oki Electric Ind Co Ltd | Ｌｅｄアレイチップおよびその製造方法ならびにダイシング装置 |
| US6320206B1 (en) | 1999-02-05 | 2001-11-20 | Lumileds Lighting, U.S., Llc | Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks |
| US6222207B1 (en) | 1999-05-24 | 2001-04-24 | Lumileds Lighting, U.S. Llc | Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip |
| US6133589A (en) | 1999-06-08 | 2000-10-17 | Lumileds Lighting, U.S., Llc | AlGaInN-based LED having thick epitaxial layer for improved light extraction |
| WO2001061765A1 (de) * | 2000-02-15 | 2001-08-23 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes halbleiterbauelement und verfahren zu dessen herstellung |
| US6791119B2 (en) * | 2001-02-01 | 2004-09-14 | Cree, Inc. | Light emitting diodes including modifications for light extraction |
| DE10111501B4 (de) * | 2001-03-09 | 2019-03-21 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement und Verfahren zu dessen Herstellung |
| US6547249B2 (en) * | 2001-03-29 | 2003-04-15 | Lumileds Lighting U.S., Llc | Monolithic series/parallel led arrays formed on highly resistive substrates |
| JP4107814B2 (ja) * | 2001-07-06 | 2008-06-25 | 豊田合成株式会社 | 発光素子 |
-
2002
- 2002-01-28 US US10/058,369 patent/US6635503B2/en not_active Expired - Lifetime
- 2002-10-18 CN CNA028275896A patent/CN1938855A/zh active Pending
- 2002-10-18 AT AT02806684T patent/ATE492032T1/de not_active IP Right Cessation
- 2002-10-18 CA CA002473722A patent/CA2473722A1/en not_active Abandoned
- 2002-10-18 DE DE60238641T patent/DE60238641D1/de not_active Expired - Lifetime
- 2002-10-18 KR KR1020047010605A patent/KR100923485B1/ko not_active IP Right Cessation
- 2002-10-18 AU AU2002335082A patent/AU2002335082A1/en not_active Abandoned
- 2002-10-18 JP JP2003564940A patent/JP4489436B2/ja not_active Expired - Lifetime
- 2002-10-18 WO PCT/US2002/033315 patent/WO2003065457A2/en active Application Filing
- 2002-10-18 EP EP02806684A patent/EP1470591B1/de not_active Expired - Lifetime
- 2002-10-29 MY MYPI20024049A patent/MY129737A/en unknown
- 2002-10-30 TW TW091132155A patent/TWI253764B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US20030143767A1 (en) | 2003-07-31 |
| TW200303622A (en) | 2003-09-01 |
| CN1938855A (zh) | 2007-03-28 |
| KR100923485B1 (ko) | 2009-10-27 |
| JP2005516419A (ja) | 2005-06-02 |
| CA2473722A1 (en) | 2003-08-07 |
| WO2003065457A3 (en) | 2004-02-05 |
| MY129737A (en) | 2007-04-30 |
| KR20040073549A (ko) | 2004-08-19 |
| EP1470591B1 (de) | 2010-12-15 |
| WO2003065457A2 (en) | 2003-08-07 |
| ATE492032T1 (de) | 2011-01-15 |
| JP4489436B2 (ja) | 2010-06-23 |
| EP1470591A2 (de) | 2004-10-27 |
| US6635503B2 (en) | 2003-10-21 |
| AU2002335082A1 (en) | 2003-09-02 |
| TWI253764B (en) | 2006-04-21 |
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