DE60236007D1 - Halbleiterstruktur mit einem oder mehreren durchgangslöchern - Google Patents

Halbleiterstruktur mit einem oder mehreren durchgangslöchern

Info

Publication number
DE60236007D1
DE60236007D1 DE60236007T DE60236007T DE60236007D1 DE 60236007 D1 DE60236007 D1 DE 60236007D1 DE 60236007 T DE60236007 T DE 60236007T DE 60236007 T DE60236007 T DE 60236007T DE 60236007 D1 DE60236007 D1 DE 60236007D1
Authority
DE
Germany
Prior art keywords
semiconductor structure
holes
continuous holes
feed
metallization process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60236007T
Other languages
English (en)
Inventor
Matthias Heschel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiwan Semiconductor Manufacturing Co TSMC Ltd
Original Assignee
Hymite AS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hymite AS filed Critical Hymite AS
Application granted granted Critical
Publication of DE60236007D1 publication Critical patent/DE60236007D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
    • G02B6/4236—Fixing or mounting methods of the aligned elements
    • G02B6/4245—Mounting of the opto-electronic elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4274—Electrical aspects
    • G02B6/4279—Radio frequency signal propagation aspects of the electrical connection, high frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49126—Assembling bases
DE60236007T 2001-10-17 2002-10-15 Halbleiterstruktur mit einem oder mehreren durchgangslöchern Expired - Lifetime DE60236007D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US32969901P 2001-10-17 2001-10-17
US10/264,440 US6818464B2 (en) 2001-10-17 2002-10-04 Double-sided etching technique for providing a semiconductor structure with through-holes, and a feed-through metalization process for sealing the through-holes
PCT/EP2002/011605 WO2003034490A2 (en) 2001-10-17 2002-10-15 Semiconductor structure with one or more through-holes

Publications (1)

Publication Number Publication Date
DE60236007D1 true DE60236007D1 (de) 2010-05-27

Family

ID=26950546

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60236007T Expired - Lifetime DE60236007D1 (de) 2001-10-17 2002-10-15 Halbleiterstruktur mit einem oder mehreren durchgangslöchern

Country Status (9)

Country Link
US (3) US6818464B2 (de)
EP (1) EP1436837B1 (de)
JP (1) JP4546087B2 (de)
CN (1) CN100377333C (de)
AT (1) ATE464656T1 (de)
AU (1) AU2002351771A1 (de)
DE (1) DE60236007D1 (de)
HK (1) HK1074913A1 (de)
WO (1) WO2003034490A2 (de)

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JP4546087B2 (ja) 2010-09-15
EP1436837B1 (de) 2010-04-14
EP1436837A2 (de) 2004-07-14
WO2003034490A2 (en) 2003-04-24
US7057274B2 (en) 2006-06-06
CN100377333C (zh) 2008-03-26
ATE464656T1 (de) 2010-04-15
CN1605126A (zh) 2005-04-06
AU2002351771A1 (en) 2003-04-28
HK1074913A1 (en) 2005-11-25
JP2005506701A (ja) 2005-03-03
US7081412B2 (en) 2006-07-25
WO2003034490A3 (en) 2004-04-01
US20040266038A1 (en) 2004-12-30
US20030071283A1 (en) 2003-04-17
US20050059204A1 (en) 2005-03-17

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