DE60234330D1 - Halbleiterelement aus galliumnitridzusammensetzung - Google Patents
Halbleiterelement aus galliumnitridzusammensetzungInfo
- Publication number
- DE60234330D1 DE60234330D1 DE60234330T DE60234330T DE60234330D1 DE 60234330 D1 DE60234330 D1 DE 60234330D1 DE 60234330 T DE60234330 T DE 60234330T DE 60234330 T DE60234330 T DE 60234330T DE 60234330 D1 DE60234330 D1 DE 60234330D1
- Authority
- DE
- Germany
- Prior art keywords
- gallium nitride
- type
- nitride semiconductor
- semiconductor element
- type impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001114025 | 2001-04-12 | ||
PCT/JP2002/003475 WO2002084831A1 (en) | 2001-04-12 | 2002-04-08 | Gallium nitride compound semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60234330D1 true DE60234330D1 (de) | 2009-12-24 |
Family
ID=18965167
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60234330T Expired - Lifetime DE60234330D1 (de) | 2001-04-12 | 2002-04-08 | Halbleiterelement aus galliumnitridzusammensetzung |
Country Status (9)
Country | Link |
---|---|
US (1) | US7230263B2 (de) |
EP (1) | EP1387453B1 (de) |
JP (1) | JP4032803B2 (de) |
KR (1) | KR100902109B1 (de) |
CN (1) | CN1252883C (de) |
AT (1) | ATE448589T1 (de) |
CA (1) | CA2444273C (de) |
DE (1) | DE60234330D1 (de) |
WO (1) | WO2002084831A1 (de) |
Families Citing this family (37)
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US6958497B2 (en) | 2001-05-30 | 2005-10-25 | Cree, Inc. | Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures |
US7692182B2 (en) * | 2001-05-30 | 2010-04-06 | Cree, Inc. | Group III nitride based quantum well light emitting device structures with an indium containing capping structure |
JP4337520B2 (ja) * | 2002-11-25 | 2009-09-30 | 日亜化学工業株式会社 | リッジ導波路型半導体レーザ |
TWI303909B (en) * | 2002-11-25 | 2008-12-01 | Nichia Corp | Ridge waveguide semiconductor laser diode |
JP4500516B2 (ja) * | 2002-12-13 | 2010-07-14 | 三菱電機株式会社 | 半導体レーザ素子およびその製造方法 |
JP2004311658A (ja) * | 2003-04-04 | 2004-11-04 | Sharp Corp | 窒化物半導体レーザ素子、この窒化物半導体レーザ素子の製造方法およびこの窒化物半導体レーザ素子を用いた光学装置 |
JP2005203520A (ja) | 2004-01-14 | 2005-07-28 | Sumitomo Electric Ind Ltd | 半導体発光素子 |
JP5028640B2 (ja) * | 2004-03-26 | 2012-09-19 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子 |
JP2006013463A (ja) * | 2004-05-21 | 2006-01-12 | Showa Denko Kk | Iii族窒化物半導体発光素子 |
JP2007158132A (ja) * | 2005-12-06 | 2007-06-21 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体素子及びその製造方法 |
US20070045638A1 (en) * | 2005-08-24 | 2007-03-01 | Lumileds Lighting U.S., Llc | III-nitride light emitting device with double heterostructure light emitting region |
JP2007066981A (ja) | 2005-08-29 | 2007-03-15 | Toshiba Corp | 半導体装置 |
JP4905125B2 (ja) * | 2006-01-26 | 2012-03-28 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子及びその製造方法 |
JP4462251B2 (ja) * | 2006-08-17 | 2010-05-12 | 日立電線株式会社 | Iii−v族窒化物系半導体基板及びiii−v族窒化物系発光素子 |
JP2008263023A (ja) * | 2007-04-11 | 2008-10-30 | Sumitomo Electric Ind Ltd | Iii−v族化合物半導体の製造方法、ショットキーバリアダイオード、発光ダイオード、レーザダイオード、およびそれらの製造方法 |
JP4341702B2 (ja) * | 2007-06-21 | 2009-10-07 | 住友電気工業株式会社 | Iii族窒化物系半導体発光素子 |
JP4478175B2 (ja) * | 2007-06-26 | 2010-06-09 | 株式会社東芝 | 半導体装置 |
JP2009218235A (ja) * | 2008-03-06 | 2009-09-24 | Rohm Co Ltd | 発光ダイオード |
JP5191843B2 (ja) * | 2008-09-09 | 2013-05-08 | 株式会社東芝 | 半導体発光素子及びウェーハ |
JP5319397B2 (ja) * | 2009-05-27 | 2013-10-16 | シャープ株式会社 | 半導体レーザ装置 |
JP2011023398A (ja) * | 2009-07-13 | 2011-02-03 | Sharp Corp | 半導体発光素子 |
US8536615B1 (en) | 2009-12-16 | 2013-09-17 | Cree, Inc. | Semiconductor device structures with modulated and delta doping and related methods |
US8604461B2 (en) | 2009-12-16 | 2013-12-10 | Cree, Inc. | Semiconductor device structures with modulated doping and related methods |
KR101422452B1 (ko) | 2009-12-21 | 2014-07-22 | 가부시끼가이샤 도시바 | 질화물 반도체 발광 소자 및 그 제조 방법 |
JP5793292B2 (ja) * | 2010-02-17 | 2015-10-14 | 豊田合成株式会社 | 半導体発光素子 |
JP2011233751A (ja) * | 2010-04-28 | 2011-11-17 | Panasonic Corp | 窒化物半導体トランジスタ |
JP2011238678A (ja) * | 2010-05-07 | 2011-11-24 | Panasonic Corp | 半導体発光装置 |
KR20120045919A (ko) * | 2010-11-01 | 2012-05-09 | 삼성엘이디 주식회사 | 반도체 발광소자 |
US8653542B2 (en) * | 2011-01-13 | 2014-02-18 | Tsmc Solid State Lighting Ltd. | Micro-interconnects for light-emitting diodes |
JP5255106B2 (ja) * | 2011-10-24 | 2013-08-07 | 住友電気工業株式会社 | 窒化物半導体発光素子 |
US10060515B2 (en) | 2013-06-28 | 2018-08-28 | Festo Ag & Co. Kg | Linear drive and method for the production thereof |
CN103824913B (zh) * | 2014-03-12 | 2016-08-24 | 合肥彩虹蓝光科技有限公司 | 一种Mg掺杂P型GaN外延生长方法 |
US9873170B2 (en) * | 2015-03-24 | 2018-01-23 | Nichia Corporation | Method of manufacturing light emitting element |
DE102016112294A1 (de) * | 2016-07-05 | 2018-01-11 | Osram Opto Semiconductors Gmbh | Halbleiterschichtenfolge |
JP6669144B2 (ja) * | 2016-12-16 | 2020-03-18 | 日亜化学工業株式会社 | 発光素子の製造方法 |
US11228160B2 (en) * | 2018-11-15 | 2022-01-18 | Sharp Kabushiki Kaisha | AlGaInPAs-based semiconductor laser device and method for producing same |
CN113594028A (zh) * | 2021-07-27 | 2021-11-02 | 中国科学院苏州纳米技术与纳米仿生研究所 | 氮化镓p型掺杂的方法、GaN基PN结的制作方法及其应用 |
Family Cites Families (54)
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JP3105981B2 (ja) | 1992-01-28 | 2000-11-06 | シャープ株式会社 | 半導体発光素子 |
US5578839A (en) | 1992-11-20 | 1996-11-26 | Nichia Chemical Industries, Ltd. | Light-emitting gallium nitride-based compound semiconductor device |
US5656832A (en) * | 1994-03-09 | 1997-08-12 | Kabushiki Kaisha Toshiba | Semiconductor heterojunction device with ALN buffer layer of 3nm-10nm average film thickness |
JPH08111558A (ja) | 1994-10-07 | 1996-04-30 | Hitachi Ltd | 半導体レーザ素子 |
US5777350A (en) | 1994-12-02 | 1998-07-07 | Nichia Chemical Industries, Ltd. | Nitride semiconductor light-emitting device |
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JPH0936423A (ja) | 1995-07-24 | 1997-02-07 | Toyoda Gosei Co Ltd | 3族窒化物半導体発光素子 |
JPH08293623A (ja) | 1995-04-21 | 1996-11-05 | Rohm Co Ltd | 発光ダイオードの製法 |
JP3728332B2 (ja) * | 1995-04-24 | 2005-12-21 | シャープ株式会社 | 化合物半導体発光素子 |
DE69602141T2 (de) | 1995-08-28 | 1999-10-21 | Mitsubishi Cable Ind Ltd | Lichtemittierende Vorrichtung auf Basis einer Nitridverbindung der Gruppe III |
JPH09129926A (ja) | 1995-08-28 | 1997-05-16 | Mitsubishi Cable Ind Ltd | Iii族窒化物発光素子 |
JP3457468B2 (ja) | 1995-09-12 | 2003-10-20 | 株式会社東芝 | 多層構造半導体装置 |
US5959307A (en) | 1995-11-06 | 1999-09-28 | Nichia Chemical Industries Ltd. | Nitride semiconductor device |
JP3409958B2 (ja) | 1995-12-15 | 2003-05-26 | 株式会社東芝 | 半導体発光素子 |
JP3441329B2 (ja) | 1996-02-26 | 2003-09-02 | 株式会社東芝 | 窒化ガリウム系半導体素子 |
JP3336855B2 (ja) * | 1996-03-27 | 2002-10-21 | 豊田合成株式会社 | 3族窒化物化合物半導体発光素子 |
JP3448450B2 (ja) | 1996-04-26 | 2003-09-22 | 三洋電機株式会社 | 発光素子およびその製造方法 |
JP3753793B2 (ja) | 1996-06-14 | 2006-03-08 | 豊田合成株式会社 | 3族窒化物化合物半導体発光素子 |
JPH1012969A (ja) | 1996-06-19 | 1998-01-16 | Nichia Chem Ind Ltd | 窒化物半導体レーザ素子 |
JPH1012922A (ja) | 1996-06-19 | 1998-01-16 | Toyoda Gosei Co Ltd | 3族窒化物半導体発光素子 |
US5841802A (en) | 1996-08-30 | 1998-11-24 | Mcdonnell Douglas Corporation | Multiple, isolated strained quantum well semiconductor laser |
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JPH10163523A (ja) | 1996-12-03 | 1998-06-19 | Sumitomo Chem Co Ltd | 3−5族化合物半導体の製造方法および発光素子 |
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JPH10242565A (ja) * | 1997-02-21 | 1998-09-11 | Pioneer Electron Corp | 半導体レーザ |
JPH10294531A (ja) | 1997-02-21 | 1998-11-04 | Toshiba Corp | 窒化物化合物半導体発光素子 |
SG63757A1 (en) | 1997-03-12 | 1999-03-30 | Hewlett Packard Co | Adding impurities to improve the efficiency of allngan quantum well led's |
JP3239812B2 (ja) * | 1997-08-07 | 2001-12-17 | 日本電気株式会社 | InGaN層を含む窒化ガリウム系半導体層の結晶成長方法および窒化ガリウム系発光素子およびその製造方法 |
JP3783411B2 (ja) | 1997-08-15 | 2006-06-07 | 富士ゼロックス株式会社 | 表面発光型半導体レーザ |
JPH1168158A (ja) * | 1997-08-20 | 1999-03-09 | Sanyo Electric Co Ltd | 窒化ガリウム系化合物半導体装置 |
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JPH11340559A (ja) | 1998-05-22 | 1999-12-10 | Hitachi Ltd | 半導体発光素子 |
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JP3712870B2 (ja) | 1998-09-10 | 2005-11-02 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体発光素子 |
JP2000156544A (ja) | 1998-09-17 | 2000-06-06 | Matsushita Electric Ind Co Ltd | 窒化物半導体素子の製造方法 |
US6153894A (en) | 1998-11-12 | 2000-11-28 | Showa Denko Kabushiki Kaisha | Group-III nitride semiconductor light-emitting device |
JP2000208814A (ja) | 1998-11-12 | 2000-07-28 | Sharp Corp | 半導体発光素子 |
JP2000208875A (ja) | 1999-01-14 | 2000-07-28 | Fujitsu Ltd | 多重量子井戸構造半導体発光素子 |
JP3446660B2 (ja) | 1999-06-04 | 2003-09-16 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
EP1168539B1 (de) | 1999-03-04 | 2009-12-16 | Nichia Corporation | Nitridhalbleiterlaserelement |
JP3754226B2 (ja) * | 1999-03-25 | 2006-03-08 | 三洋電機株式会社 | 半導体発光素子 |
JP3567790B2 (ja) | 1999-03-31 | 2004-09-22 | 豊田合成株式会社 | Iii族窒化物系化合物半導体発光素子 |
JP3719047B2 (ja) | 1999-06-07 | 2005-11-24 | 日亜化学工業株式会社 | 窒化物半導体素子 |
JP2000349377A (ja) | 1999-06-08 | 2000-12-15 | Shimadzu Corp | Ld励起固体レーザ装置 |
JP4625998B2 (ja) | 1999-07-27 | 2011-02-02 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子 |
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JP2001094212A (ja) * | 1999-09-24 | 2001-04-06 | Sanyo Electric Co Ltd | 半導体素子およびその製造方法 |
US6441393B2 (en) | 1999-11-17 | 2002-08-27 | Lumileds Lighting U.S., Llc | Semiconductor devices with selectively doped III-V nitride layers |
JP2001168028A (ja) * | 1999-12-03 | 2001-06-22 | Sony Corp | 窒化物系iii−v族化合物の結晶製造方法、窒化物系iii−v族化合物結晶基板、窒化物系iii−v族化合物結晶膜およびデバイスの製造方法 |
JP2001210915A (ja) * | 2000-01-24 | 2001-08-03 | Sony Corp | 半導体発光装置 |
JP3498697B2 (ja) | 2000-07-07 | 2004-02-16 | 日亜化学工業株式会社 | 窒化物半導体素子 |
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-
2002
- 2002-04-08 AT AT02714522T patent/ATE448589T1/de not_active IP Right Cessation
- 2002-04-08 DE DE60234330T patent/DE60234330D1/de not_active Expired - Lifetime
- 2002-04-08 EP EP02714522A patent/EP1387453B1/de not_active Expired - Lifetime
- 2002-04-08 KR KR1020037013157A patent/KR100902109B1/ko active IP Right Grant
- 2002-04-08 US US10/474,808 patent/US7230263B2/en not_active Expired - Lifetime
- 2002-04-08 CN CN02808020.3A patent/CN1252883C/zh not_active Expired - Fee Related
- 2002-04-08 CA CA2444273A patent/CA2444273C/en not_active Expired - Lifetime
- 2002-04-08 WO PCT/JP2002/003475 patent/WO2002084831A1/ja active Application Filing
- 2002-04-11 JP JP2002109309A patent/JP4032803B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
WO2002084831A1 (en) | 2002-10-24 |
ATE448589T1 (de) | 2009-11-15 |
US20040124500A1 (en) | 2004-07-01 |
CA2444273C (en) | 2012-05-22 |
KR100902109B1 (ko) | 2009-06-09 |
CA2444273A1 (en) | 2002-10-24 |
EP1387453A4 (de) | 2008-10-22 |
CN1252883C (zh) | 2006-04-19 |
EP1387453B1 (de) | 2009-11-11 |
EP1387453A1 (de) | 2004-02-04 |
KR20040018348A (ko) | 2004-03-03 |
US7230263B2 (en) | 2007-06-12 |
CN1502154A (zh) | 2004-06-02 |
JP2002374043A (ja) | 2002-12-26 |
JP4032803B2 (ja) | 2008-01-16 |
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Legal Events
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