DE60225005D1 - Nichtflüchtiger speicher mit verbessertem programmieren und verfahren dafür - Google Patents

Nichtflüchtiger speicher mit verbessertem programmieren und verfahren dafür

Info

Publication number
DE60225005D1
DE60225005D1 DE60225005T DE60225005T DE60225005D1 DE 60225005 D1 DE60225005 D1 DE 60225005D1 DE 60225005 T DE60225005 T DE 60225005T DE 60225005 T DE60225005 T DE 60225005T DE 60225005 D1 DE60225005 D1 DE 60225005D1
Authority
DE
Germany
Prior art keywords
programming
volatile memory
programmed
cell
parallel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60225005T
Other languages
English (en)
Other versions
DE60225005T2 (de
Inventor
Geoffrey Gongwer
Daniel C Guterman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Corp
Original Assignee
SanDisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25159763&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE60225005(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by SanDisk Corp filed Critical SanDisk Corp
Application granted granted Critical
Publication of DE60225005D1 publication Critical patent/DE60225005D1/de
Publication of DE60225005T2 publication Critical patent/DE60225005T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G11C16/3481—Circuits or methods to verify correct programming of nonvolatile memory cells whilst programming is in progress, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate programming
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/562—Multilevel memory programming aspects
    • G11C2211/5621—Multilevel programming verification
DE60225005T 2001-02-26 2002-02-22 Nichtflüchtiger speicher mit verbessertem programmieren und verfahren dafür Expired - Fee Related DE60225005T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US793370 1985-10-31
US09/793,370 US6738289B2 (en) 2001-02-26 2001-02-26 Non-volatile memory with improved programming and method therefor
PCT/US2002/005265 WO2002069346A2 (en) 2001-02-26 2002-02-22 Non-volatile memory with improved programming and method therefor

Publications (2)

Publication Number Publication Date
DE60225005D1 true DE60225005D1 (de) 2008-03-27
DE60225005T2 DE60225005T2 (de) 2009-02-12

Family

ID=25159763

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60225005T Expired - Fee Related DE60225005T2 (de) 2001-02-26 2002-02-22 Nichtflüchtiger speicher mit verbessertem programmieren und verfahren dafür

Country Status (10)

Country Link
US (5) US6738289B2 (de)
EP (2) EP1393323B1 (de)
JP (1) JP2004519804A (de)
KR (1) KR20030014207A (de)
CN (1) CN1460268A (de)
AT (1) ATE386327T1 (de)
AU (1) AU2002242219A1 (de)
DE (1) DE60225005T2 (de)
TW (1) TW556194B (de)
WO (1) WO2002069346A2 (de)

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* Cited by examiner, † Cited by third party
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US20020118574A1 (en) 2002-08-29
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