DE60224827D1 - Eingebettete 3d-molehole-crossbar-architektur für eine elektrochemische molekulare speichereinrichtung - Google Patents

Eingebettete 3d-molehole-crossbar-architektur für eine elektrochemische molekulare speichereinrichtung

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Publication number
DE60224827D1
DE60224827D1 DE60224827T DE60224827T DE60224827D1 DE 60224827 D1 DE60224827 D1 DE 60224827D1 DE 60224827 T DE60224827 T DE 60224827T DE 60224827 T DE60224827 T DE 60224827T DE 60224827 D1 DE60224827 D1 DE 60224827D1
Authority
DE
Germany
Prior art keywords
conductor
molehole
embedded
storage device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60224827T
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English (en)
Other versions
DE60224827T2 (de
Inventor
Werner G Kuhr
David F Bocian
Zhiming Liu
Riverside Yasseri
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University of California
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University of California
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Publication of DE60224827D1 publication Critical patent/DE60224827D1/de
Application granted granted Critical
Publication of DE60224827T2 publication Critical patent/DE60224827T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/28—Electrolytic cell components
    • G01N27/30—Electrodes, e.g. test electrodes; Half-cells
    • G01N27/327—Biochemical electrodes, e.g. electrical or mechanical details for in vitro measurements
    • G01N27/3275—Sensing specific biomolecules, e.g. nucleic acid strands, based on an electrode surface reaction
    • G01N27/3278—Sensing specific biomolecules, e.g. nucleic acid strands, based on an electrode surface reaction involving nanosized elements, e.g. nanogaps or nanoparticles
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/48—Biological material, e.g. blood, urine; Haemocytometers
    • G01N33/50—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
    • G01N33/53—Immunoassay; Biospecific binding assay; Materials therefor
    • G01N33/543—Immunoassay; Biospecific binding assay; Materials therefor with an insoluble carrier for immobilising immunochemicals
    • G01N33/54366—Apparatus specially adapted for solid-phase testing
    • G01N33/54373—Apparatus specially adapted for solid-phase testing involving physiochemical end-point determination, e.g. wave-guides, FETS, gratings
    • G01N33/5438—Electrodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5664—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using organic memory material storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/04—Construction or manufacture in general
    • H01M10/0436—Small-sized flat cells or batteries for portable equipment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/36—Selection of substances as active materials, active masses, active liquids
    • H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/36—Selection of substances as active materials, active masses, active liquids
    • H01M4/60—Selection of substances as active materials, active masses, active liquids of organic compounds
    • H01M4/602—Polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M6/00—Primary cells; Manufacture thereof
    • H01M6/40—Printed batteries, e.g. thin film batteries
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
DE60224827T 2001-10-26 2002-10-07 Eingebettete 3d-molehole-crossbar-architektur für eine elektrochemische molekulare speichereinrichtung Expired - Lifetime DE60224827T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/046,499 US7074519B2 (en) 2001-10-26 2001-10-26 Molehole embedded 3-D crossbar architecture used in electrochemical molecular memory device
US46499 2001-10-26
PCT/US2002/032035 WO2003085752A2 (en) 2001-10-26 2002-10-07 Molehole embedded 3-d crossbar architecture used in electrochemical molecular memory device

Publications (2)

Publication Number Publication Date
DE60224827D1 true DE60224827D1 (de) 2008-03-13
DE60224827T2 DE60224827T2 (de) 2009-01-15

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
DE60224827T Expired - Lifetime DE60224827T2 (de) 2001-10-26 2002-10-07 Eingebettete 3d-molehole-crossbar-architektur für eine elektrochemische molekulare speichereinrichtung
DE60239499T Expired - Lifetime DE60239499D1 (de) 2001-10-26 2002-10-07 Eingebettete 3D-Molehole-Crossbar-Architektur für eine elektrochemische molekulare Speichereinrichtung

Family Applications After (1)

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DE60239499T Expired - Lifetime DE60239499D1 (de) 2001-10-26 2002-10-07 Eingebettete 3D-Molehole-Crossbar-Architektur für eine elektrochemische molekulare Speichereinrichtung

Country Status (7)

Country Link
US (2) US7074519B2 (de)
EP (2) EP1449218B1 (de)
JP (1) JP2005520348A (de)
AT (2) ATE502385T1 (de)
AU (1) AU2002367718A1 (de)
DE (2) DE60224827T2 (de)
WO (1) WO2003085752A2 (de)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1278234B1 (de) * 2001-07-19 2012-01-11 STMicroelectronics Srl MOS Transistor und Verfahren zu dessen Herstellung
US7955483B2 (en) * 2002-03-18 2011-06-07 Honeywell International Inc. Carbon nanotube-based glucose sensor
EP1388521B1 (de) * 2002-08-08 2006-06-07 Sony Deutschland GmbH Verfahren zur Herstellung einer Kreuzschienenstruktur von Nanodrähten
US6958270B2 (en) * 2002-12-17 2005-10-25 North Carolina State University Methods of fabricating crossbar array microelectronic electrochemical cells
DE10300521A1 (de) * 2003-01-09 2004-07-22 Siemens Ag Organoresistiver Speicher
US7785737B2 (en) * 2003-08-07 2010-08-31 The University Of Tulsa Electronic crossbar system for accessing arrays of nanobatteries for mass memory storage and system power
KR100549227B1 (ko) * 2003-09-06 2006-02-03 한국전자통신연구원 유기분자 소자의 제작 방법
US20050244811A1 (en) * 2003-12-15 2005-11-03 Nano-Proprietary, Inc. Matrix array nanobiosensor
US7358113B2 (en) * 2004-01-28 2008-04-15 Zettacore, Inc. Processing systems and methods for molecular memory
US7324385B2 (en) * 2004-01-28 2008-01-29 Zettacore, Inc. Molecular memory
US7307870B2 (en) * 2004-01-28 2007-12-11 Zettacore, Inc. Molecular memory devices and methods
US20050162895A1 (en) * 2004-01-28 2005-07-28 Kuhr Werner G. Molecular memory arrays and devices
US7695756B2 (en) * 2004-04-29 2010-04-13 Zettacore, Inc. Systems, tools and methods for production of molecular memory
JP2007526474A (ja) * 2004-03-04 2007-09-13 アイシス・イノベーション・リミテッド 電気化学センサー
US20050221473A1 (en) * 2004-03-30 2005-10-06 Intel Corporation Sensor array integrated circuits
US7862624B2 (en) * 2004-04-06 2011-01-04 Bao Tran Nano-particles on fabric or textile
US7330369B2 (en) * 2004-04-06 2008-02-12 Bao Tran NANO-electronic memory array
US20050218397A1 (en) * 2004-04-06 2005-10-06 Availableip.Com NANO-electronics for programmable array IC
US7019391B2 (en) * 2004-04-06 2006-03-28 Bao Tran NANO IC packaging
US20050218398A1 (en) * 2004-04-06 2005-10-06 Availableip.Com NANO-electronics
US7202541B2 (en) * 2004-04-29 2007-04-10 Hewlett-Packard Development Company, L.P. Apparatus and method for transverse characterization of materials
ATE500923T1 (de) * 2004-04-29 2011-03-15 Zettacore Inc Molekularspeicher sowie verarbeitungssysteme und verfahren dafür
US7122853B1 (en) * 2004-08-17 2006-10-17 Fasl, Inc. Method to improve yield and simplify operation of polymer memory cells
US7671398B2 (en) * 2005-02-23 2010-03-02 Tran Bao Q Nano memory, light, energy, antenna and strand-based systems and methods
CA2537561A1 (en) * 2005-02-25 2006-08-25 Dani Instruments S.P.A. Electric device for determining aeriform substances
CN101151526B (zh) * 2005-03-29 2012-05-30 Cci株式会社 生物传感器
US8173630B2 (en) * 2005-06-03 2012-05-08 The Regents Of The University Of California Multipodal tethers for high-density attachment of redox-active moieties to substrates
US7642546B2 (en) * 2005-12-01 2010-01-05 Zettacore, Inc. Molecular memory devices including solid-state dielectric layers and related methods
US8264137B2 (en) 2006-01-03 2012-09-11 Samsung Electronics Co., Ltd. Curing binder material for carbon nanotube electron emission cathodes
US7393699B2 (en) 2006-06-12 2008-07-01 Tran Bao Q NANO-electronics
KR100758285B1 (ko) * 2006-09-27 2007-09-12 한국전자통신연구원 바이오 센서, 그 제조방법 및 이를 구비한 바이오 감지장치
US7382647B1 (en) * 2007-02-27 2008-06-03 International Business Machines Corporation Rectifying element for a crosspoint based memory array architecture
WO2009029871A1 (en) 2007-08-31 2009-03-05 Zettacore, Inc. Methods of treating a surface to promote binding of molecule(s) of interest, coatings and devices formed therefrom
US20090056994A1 (en) * 2007-08-31 2009-03-05 Kuhr Werner G Methods of Treating a Surface to Promote Metal Plating and Devices Formed
WO2009086441A2 (en) * 2007-12-27 2009-07-09 Zettacore, Inc. Self-contained charge storage molecules for use in molecular capacitors
EP2254458A1 (de) 2008-02-04 2010-12-01 Bayer HealthCare, LLC Analytensensoren auf halbleiterbasis und verfahren
US8846246B2 (en) * 2008-07-14 2014-09-30 Esionic Es, Inc. Phosphonium ionic liquids, compositions, methods of making and electrolytic films formed there from
US8927775B2 (en) 2008-07-14 2015-01-06 Esionic Es, Inc. Phosphonium ionic liquids, salts, compositions, methods of making and devices formed there from
US8907133B2 (en) 2008-07-14 2014-12-09 Esionic Es, Inc. Electrolyte compositions and electrochemical double layer capacitors formed there from
CA2735666A1 (en) * 2008-09-19 2010-03-25 Bayer Healthcare Llc Analyte sensors, testing apparatus and manufacturing methods
CN102196771A (zh) 2008-09-19 2011-09-21 拜尔健康护理有限责任公司 分析物传感器、系统、测试设备和制造方法
WO2010033748A1 (en) * 2008-09-19 2010-03-25 Bayer Healthcare Llc Electrical devices with enhanced electrochemical activity and manufacturing methods thereof
CN102202575A (zh) * 2008-09-19 2011-09-28 拜尔健康护理有限责任公司 刺血针分析物传感器和制造方法
EP2180539A1 (de) * 2008-10-21 2010-04-28 Commissariat à l'Energie Atomique Neuartige Materialien und deren Verwendung zur elektrokatalytischen Entwicklung oder Aufnahme von H2
DE102010007904A1 (de) * 2010-02-13 2011-08-18 Forschungszentrum Jülich GmbH, 52428 Sensorstruktur und Verfahren zur Herstellung
ES2768245T3 (es) * 2010-03-31 2020-06-22 Univ Danmarks Tekniske Matriz multisensor y su uso para la detección de analitos o mezclas de los mismos en la fase gaseosa y procedimiento para su preparación
CH702942A1 (de) * 2010-03-31 2011-10-14 Tecan Trading Ag Kapazitives Messverfahren und Vorrichtung zur Füllstandsdetektion und entsprechend ausgestattetes Laborgerät.
WO2012005723A1 (en) 2010-07-06 2012-01-12 Zettacore, Inc. Methods of treating copper surfaces for enhancing adhesion to organic substrates for use in printed circuit boards
JP6251568B2 (ja) 2010-07-06 2017-12-20 アトテック ドイチェランド ゲーエムベーハー 金属表面を処理する方法と、この方法によって形成された装置
JP5380481B2 (ja) * 2011-03-07 2014-01-08 株式会社東芝 記憶装置およびその製造方法
GB2519110B (en) 2013-10-09 2018-04-18 Nokia Technologies Oy An apparatus and associated methods for analyte detection
KR101600141B1 (ko) * 2013-10-11 2016-03-04 서울대학교산학협력단 레독스 플로우 전지용 전해액 및 이를 포함하는 레독스 플로우 전지
JP6704577B2 (ja) * 2015-02-23 2020-06-03 国立大学法人 奈良先端科学技術大学院大学 カーボンナノチューブ−ドーパント組成物複合体の製造方法およびカーボンナノチューブ−ドーパント組成物複合体
LU92920B1 (en) * 2015-12-21 2017-07-13 Luxembourg Inst Science & Tech List Electrochemical reactor to control the pH in miniaturized dimensions
US20170219554A1 (en) * 2016-01-29 2017-08-03 Mara Nanotech New York, Inc. Apparatus and method for detecting analytes in solution
DE102016003461A1 (de) * 2016-03-23 2017-09-28 Forschungszentrum Jülich GmbH Verfahren zur Herstellung eines Speichers, Speicher, sowie Verwendung des Speichers
WO2017162222A1 (de) * 2016-03-23 2017-09-28 Forschungszentrum Jülich GmbH Verfahren zur herstellung eines speichers, speicher sowie verwendung des speichers
FR3061303A1 (fr) * 2016-12-23 2018-06-29 Universite Paris Diderot Paris 7 Dispositif de cellules electrochimiques et systeme de mesure electrochimique comprenant un tel dispositif
CN110165720B (zh) * 2018-02-14 2020-11-27 车王电子股份有限公司 电力系统及其管理方法
US10885979B2 (en) * 2019-04-09 2021-01-05 International Business Machines Corporation Paired intercalation cells for drift migration
US11164908B2 (en) 2019-05-24 2021-11-02 International Business Machines Corporation Vertical intercalation device for neuromorphic computing
CN115515121A (zh) * 2021-06-07 2022-12-23 中国移动通信集团重庆有限公司 呼叫处理方法、装置、设备、存储介质及系统

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2980833A (en) * 1959-06-01 1961-04-18 Monsanto Chemicals Point contact rectifier device
US3637581A (en) 1967-08-04 1972-01-25 Shojiro Horiguchi Method of making chromogen-bonded-polymer and products thereof
US3890201A (en) * 1974-09-26 1975-06-17 Bactomatic Inc Multi-chamber impedance measuring module-cap combination
US4618509A (en) 1981-03-23 1986-10-21 University Of Delaware Arrays of stacked metal coordination compounds
US4802951A (en) * 1986-03-07 1989-02-07 Trustees Of Boston University Method for parallel fabrication of nanometer scale multi-device structures
US4728591A (en) * 1986-03-07 1988-03-01 Trustees Of Boston University Self-assembled nanometer lithographic masks and templates and method for parallel fabrication of nanometer scale multi-device structures
US5463014A (en) 1988-05-13 1995-10-31 The Ohio State University Research Foundation Electromagnetic radiation absorbers and modulators comprising polyaniline
US5280183A (en) 1988-05-31 1994-01-18 Edison Polymer Innovation Corporation Microelectronic device employing multiring phthalocyanine compound
US5491097A (en) * 1989-06-15 1996-02-13 Biocircuits Corporation Analyte detection with multilayered bioelectronic conductivity sensors
CA2027694C (en) * 1989-10-20 2002-03-05 Tadashi Matsunaga Process and apparatus for detecting sensitized leukocyte or antigen
US6017696A (en) * 1993-11-01 2000-01-25 Nanogen, Inc. Methods for electronic stringency control for molecular biological analysis and diagnostics
DE69220675T2 (de) 1991-12-13 1997-10-23 Exxon Chemical Patents Inc ETHYLEN/HöHERE ALPHA-OLEFINCOPOLYMERE
DE69322082T2 (de) 1992-04-20 1999-06-17 Exxon Chemical Patents Inc Copolymere des ethylens mit verzweigten olefinen
EP0591595A1 (de) 1992-10-08 1994-04-13 International Business Machines Corporation Molekulare Aufzeichnungs-/Wiedergabemethode und Aufzeichnungsmedium
US5512131A (en) * 1993-10-04 1996-04-30 President And Fellows Of Harvard College Formation of microstamped patterns on surfaces and derivative articles
IL108726A (en) * 1994-02-22 1999-12-31 Yissum Res Dev Co Electrobiochemical method and system for the determination of an analyte which is a member of a recognition pair in a liquid medium and electrodes therefor
IL109492A (en) * 1994-05-01 1999-06-20 Sirotech Ltd Method and apparatus for evaluating bacterial populations
US5814420A (en) 1994-11-23 1998-09-29 Polyplus Battery Company, Inc. Rechargeable positive electrodes
CN1192097C (zh) * 1995-03-10 2005-03-09 梅索磅秤技术有限公司 多阵列、多特异性的电化学发光检验
JP2000502437A (ja) * 1995-08-01 2000-02-29 オーストラリアン メンブレイン アンド バイオテクノロジィ リサーチ インスティチュート 複合膜センサー
US5719880A (en) * 1996-09-20 1998-02-17 Texas Instruments Incorporated, A Delaware Corporation On-chip operation for memories
US5922537A (en) * 1996-11-08 1999-07-13 N.o slashed.AB Immunoassay, Inc. Nanoparticles biosensor
DE69713500T2 (de) 1997-02-06 2003-02-20 Ibm Schichtiges medium und verfahren zur erzeugung von mustern
US7169272B2 (en) * 1997-04-30 2007-01-30 Board Of Trustees Of The University Of Arkansas Microfabricated recessed disk microelectrodes: characterization in static and convective solutions
US6013459A (en) 1997-06-12 2000-01-11 Clinical Micro Sensors, Inc. Detection of analytes using reorganization energy
GB9810568D0 (en) * 1998-05-18 1998-07-15 Imco 1097 Limited Electrode system
EP0973028B1 (de) * 1998-07-14 2004-09-22 Oxley Developments Company Limited Elektrodenanordnung
FR2781886B1 (fr) * 1998-07-31 2001-02-16 Commissariat Energie Atomique Micro-systeme a multiple points d'analyse chimique ou biologique
US6132685A (en) * 1998-08-10 2000-10-17 Caliper Technologies Corporation High throughput microfluidic systems and methods
AU5646800A (en) * 1999-03-02 2000-09-21 Helix Biopharma Corporation Card-based biosensor device
US6128214A (en) 1999-03-29 2000-10-03 Hewlett-Packard Molecular wire crossbar memory
FR2792338B1 (fr) * 1999-04-15 2001-08-10 France Etat Procede et dispositif de determination de l'existence d'une activite biologique de micro-organismes
JP2003504839A (ja) * 1999-07-01 2003-02-04 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 高密度の不揮発性記憶デバイス
US6381169B1 (en) 1999-07-01 2002-04-30 The Regents Of The University Of California High density non-volatile memory device
US6324091B1 (en) 2000-01-14 2001-11-27 The Regents Of The University Of California Tightly coupled porphyrin macrocycles for molecular memory storage
TW440845B (en) * 1999-08-11 2001-06-16 Ibm Method and system for programming FPGAs on PC-cards without additional hardware
CN1371303A (zh) * 1999-08-27 2002-09-25 皮科格瑞姆公司 在带电微单元上进行操作的方法及装置
CA2393766A1 (en) * 1999-12-15 2001-06-21 George N. Maracas Column and row addressable high density biochip array
US20020090649A1 (en) * 1999-12-15 2002-07-11 Tony Chan High density column and row addressable electrode arrays
US6212093B1 (en) 2000-01-14 2001-04-03 North Carolina State University High-density non-volatile memory devices incorporating sandwich coordination compounds
US7348183B2 (en) * 2000-10-16 2008-03-25 Board Of Trustees Of The University Of Arkansas Self-contained microelectrochemical bioassay platforms and methods
US6887714B2 (en) * 2000-10-16 2005-05-03 Board Of Trustees Of The University Of Arkansas, N.A. Microvolume immunoabsorbant assays with amplified electrochemical detection
GB2377026A (en) * 2001-06-29 2002-12-31 Imp College Innovations Ltd Electrically addressable electrochemical cell array

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WO2003085752A3 (en) 2003-12-18
DE60239499D1 (de) 2011-04-28
AU2002367718A8 (en) 2003-10-20
ATE502385T1 (de) 2011-04-15
WO2003085752A2 (en) 2003-10-16
ATE385031T1 (de) 2008-02-15
AU2002367718A1 (en) 2003-10-20
EP1914755A1 (de) 2008-04-23
EP1449218B1 (de) 2008-01-23
US20030082444A1 (en) 2003-05-01
DE60224827T2 (de) 2009-01-15
EP1449218A2 (de) 2004-08-25
JP2005520348A (ja) 2005-07-07
US20060081950A1 (en) 2006-04-20
EP1449218A4 (de) 2006-03-22
US7074519B2 (en) 2006-07-11
EP1914755B1 (de) 2011-03-16

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