DE60223654D1 - Resistzusammensetzung - Google Patents
ResistzusammensetzungInfo
- Publication number
- DE60223654D1 DE60223654D1 DE60223654T DE60223654T DE60223654D1 DE 60223654 D1 DE60223654 D1 DE 60223654D1 DE 60223654 T DE60223654 T DE 60223654T DE 60223654 T DE60223654 T DE 60223654T DE 60223654 D1 DE60223654 D1 DE 60223654D1
- Authority
- DE
- Germany
- Prior art keywords
- resist composition
- resist
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/146—Laser beam
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/3154—Of fluorinated addition polymer from unsaturated monomers
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001034023 | 2001-02-09 | ||
JP2001034023 | 2001-02-09 | ||
JP2001219570 | 2001-07-19 | ||
JP2001219570 | 2001-07-19 | ||
PCT/JP2002/000794 WO2002065212A1 (fr) | 2001-02-09 | 2002-01-31 | Composition de reserve |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60223654D1 true DE60223654D1 (de) | 2008-01-03 |
DE60223654T2 DE60223654T2 (de) | 2008-10-30 |
Family
ID=26609221
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE2002623654 Expired - Fee Related DE60223654T2 (de) | 2001-02-09 | 2002-01-31 | Resistzusammensetzung |
Country Status (8)
Country | Link |
---|---|
US (1) | US6818258B2 (de) |
EP (1) | EP1365290B1 (de) |
JP (1) | JP3800538B2 (de) |
KR (1) | KR100776551B1 (de) |
CN (1) | CN1221861C (de) |
DE (1) | DE60223654T2 (de) |
TW (1) | TWI240146B (de) |
WO (1) | WO2002065212A1 (de) |
Families Citing this family (91)
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KR100857757B1 (ko) * | 2001-02-09 | 2008-09-09 | 아사히 가라스 가부시키가이샤 | 불소 함유 화합물, 불소 함유 폴리머 및 이의 제조 방법 |
WO2002065212A1 (fr) | 2001-02-09 | 2002-08-22 | Asahi Glass Company, Limited | Composition de reserve |
JP2004004561A (ja) * | 2002-02-19 | 2004-01-08 | Sumitomo Chem Co Ltd | ポジ型レジスト組成物 |
JP4010160B2 (ja) * | 2002-03-04 | 2007-11-21 | 旭硝子株式会社 | レジスト組成物 |
JP2003330196A (ja) * | 2002-03-05 | 2003-11-19 | Jsr Corp | 感放射線性樹脂組成物 |
JP2004004703A (ja) * | 2002-04-03 | 2004-01-08 | Sumitomo Chem Co Ltd | ポジ型レジスト組成物 |
JP3856122B2 (ja) * | 2002-04-05 | 2006-12-13 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
JP4186054B2 (ja) * | 2002-04-05 | 2008-11-26 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
US6866983B2 (en) * | 2002-04-05 | 2005-03-15 | Shin-Etsu Chemical Co., Ltd. | Resist compositions and patterning process |
CN1896039A (zh) | 2002-08-21 | 2007-01-17 | 旭硝子株式会社 | 含氟化合物 |
US20040224251A1 (en) * | 2002-09-25 | 2004-11-11 | Kouji Toishi | Positive resist composition |
EP1559729A4 (de) * | 2002-11-07 | 2007-12-05 | Asahi Glass Co Ltd | Fluorpolymer |
EP1580600A4 (de) * | 2002-11-07 | 2007-05-09 | Asahi Glass Co Ltd | Resistzusammensetzung |
EP1602011A2 (de) * | 2003-02-21 | 2005-12-07 | AZ Electronic Materials USA Corp. | Photoresistente zusammensetzung für lithographie im tiefen uv-bereich |
US20040166434A1 (en) | 2003-02-21 | 2004-08-26 | Dammel Ralph R. | Photoresist composition for deep ultraviolet lithography |
JP4012480B2 (ja) * | 2003-03-28 | 2007-11-21 | Azエレクトロニックマテリアルズ株式会社 | 微細パターン形成補助剤及びその製造法 |
JP2005099646A (ja) | 2003-03-28 | 2005-04-14 | Tokyo Ohka Kogyo Co Ltd | 液浸露光プロセス用レジスト組成物および該レジスト組成物を用いたレジストパターン形成方法 |
JP4386710B2 (ja) | 2003-04-28 | 2009-12-16 | 東京応化工業株式会社 | ホトレジスト組成物、該ホトレジスト組成物用低分子化合物および高分子化合物 |
JP2005060664A (ja) | 2003-07-31 | 2005-03-10 | Asahi Glass Co Ltd | 含フッ素化合物、含フッ素ポリマーとその製造方法およびそれを含むレジスト組成物 |
US7163982B2 (en) | 2003-08-13 | 2007-01-16 | Daiki Industries, Ltd. | Process for preparing fluorine-containing polymer and method of forming fine pattern using same |
JP2005097531A (ja) * | 2003-08-21 | 2005-04-14 | Asahi Glass Co Ltd | 含フッ素共重合体とその製造方法およびそれを含むレジスト組成物 |
JP4265766B2 (ja) * | 2003-08-25 | 2009-05-20 | 東京応化工業株式会社 | 液浸露光プロセス用レジスト保護膜形成用材料、該保護膜形成材料からなるレジスト保護膜、および該レジスト保護膜を用いたレジストパターン形成方法 |
EP1679297B1 (de) | 2003-10-31 | 2009-08-05 | Asahi Glass Company, Limited | Fluorverbindung, flourpolymer und verfahren zur herstellung davon |
CN100384799C (zh) * | 2003-10-31 | 2008-04-30 | 旭硝子株式会社 | 含氟化合物、含氟聚合物及其制造方法 |
JP2005162861A (ja) * | 2003-12-02 | 2005-06-23 | Asahi Glass Co Ltd | 含フッ素ポリマー |
KR101243527B1 (ko) | 2004-01-15 | 2013-03-20 | 제이에스알 가부시끼가이샤 | 액침용 상층막 형성 조성물 및 포토레지스트 패턴 형성 방법 |
US20070166639A1 (en) * | 2004-02-20 | 2007-07-19 | Takayuki Araki | Laminated resist used for immersion lithography |
US7473512B2 (en) | 2004-03-09 | 2009-01-06 | Az Electronic Materials Usa Corp. | Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof |
JP4407358B2 (ja) * | 2004-04-14 | 2010-02-03 | 旭硝子株式会社 | 含フッ素ポリマーおよびレジスト組成物 |
JPWO2005108446A1 (ja) * | 2004-05-07 | 2008-03-21 | 旭硝子株式会社 | 含フッ素共重合体とその製造方法およびそれを含むレジスト組成物 |
JPWO2006011427A1 (ja) | 2004-07-30 | 2008-05-01 | 旭硝子株式会社 | 含フッ素化合物、含フッ素ポリマー、レジスト組成物、およびレジスト保護膜組成物 |
US7595141B2 (en) | 2004-10-26 | 2009-09-29 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern |
US20060177772A1 (en) * | 2005-02-10 | 2006-08-10 | Abdallah David J | Process of imaging a photoresist with multiple antireflective coatings |
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WO2006132287A1 (ja) * | 2005-06-08 | 2006-12-14 | Asahi Glass Company, Limited | 含フッ素共重合体とその製造方法およびそれを含むレジスト組成物 |
WO2007119804A1 (ja) * | 2006-04-13 | 2007-10-25 | Asahi Glass Company, Limited | 液浸露光用レジスト組成物 |
US20070298349A1 (en) * | 2006-06-22 | 2007-12-27 | Ruzhi Zhang | Antireflective Coating Compositions Comprising Siloxane Polymer |
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JP2001302725A (ja) * | 2000-04-26 | 2001-10-31 | Asahi Glass Co Ltd | 含フッ素ジエン、その製造方法およびその重合体 |
WO2002065212A1 (fr) | 2001-02-09 | 2002-08-22 | Asahi Glass Company, Limited | Composition de reserve |
JP2003330196A (ja) * | 2002-03-05 | 2003-11-19 | Jsr Corp | 感放射線性樹脂組成物 |
-
2002
- 2002-01-31 WO PCT/JP2002/000794 patent/WO2002065212A1/ja active IP Right Grant
- 2002-01-31 CN CNB028055128A patent/CN1221861C/zh not_active Expired - Fee Related
- 2002-01-31 DE DE2002623654 patent/DE60223654T2/de not_active Expired - Fee Related
- 2002-01-31 EP EP02710437A patent/EP1365290B1/de not_active Expired - Lifetime
- 2002-01-31 KR KR1020037010398A patent/KR100776551B1/ko not_active IP Right Cessation
- 2002-01-31 JP JP2002564669A patent/JP3800538B2/ja not_active Expired - Fee Related
- 2002-02-07 TW TW91102234A patent/TWI240146B/zh not_active IP Right Cessation
-
2003
- 2003-08-07 US US10/635,514 patent/US6818258B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US6818258B2 (en) | 2004-11-16 |
EP1365290B1 (de) | 2007-11-21 |
EP1365290A1 (de) | 2003-11-26 |
CN1221861C (zh) | 2005-10-05 |
WO2002065212A1 (fr) | 2002-08-22 |
JP3800538B2 (ja) | 2006-07-26 |
JPWO2002065212A1 (ja) | 2004-06-17 |
KR20040024544A (ko) | 2004-03-20 |
EP1365290A4 (de) | 2005-07-27 |
TWI240146B (en) | 2005-09-21 |
DE60223654T2 (de) | 2008-10-30 |
CN1493020A (zh) | 2004-04-28 |
KR100776551B1 (ko) | 2007-11-16 |
US20040033439A1 (en) | 2004-02-19 |
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