DE60214023D1 - Selektiver betrieb eines nichtflüchtigen mehrzustands-speichersystems in einem binärmodus - Google Patents

Selektiver betrieb eines nichtflüchtigen mehrzustands-speichersystems in einem binärmodus

Info

Publication number
DE60214023D1
DE60214023D1 DE60214023T DE60214023T DE60214023D1 DE 60214023 D1 DE60214023 D1 DE 60214023D1 DE 60214023 T DE60214023 T DE 60214023T DE 60214023 T DE60214023 T DE 60214023T DE 60214023 D1 DE60214023 D1 DE 60214023D1
Authority
DE
Germany
Prior art keywords
states
storage system
state storage
selective operation
binary mode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60214023T
Other languages
English (en)
Other versions
DE60214023T2 (de
Inventor
Jian Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Corp
Original Assignee
SanDisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/956,340 external-priority patent/US6456528B1/en
Application filed by SanDisk Corp filed Critical SanDisk Corp
Application granted granted Critical
Publication of DE60214023D1 publication Critical patent/DE60214023D1/de
Publication of DE60214023T2 publication Critical patent/DE60214023T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5641—Multilevel memory having cells with different number of storage levels
DE60214023T 2001-09-17 2002-09-13 Selektiver betrieb eines nichtflüchtigen mehrzustandsspeichersystems in einem binärmodus Expired - Lifetime DE60214023T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US229258 1994-04-18
US956340 2001-09-17
US09/956,340 US6456528B1 (en) 2001-09-17 2001-09-17 Selective operation of a multi-state non-volatile memory system in a binary mode
US10/229,258 US6717847B2 (en) 2001-09-17 2002-08-26 Selective operation of a multi-state non-volatile memory system in a binary mode
PCT/US2002/029177 WO2003025949A1 (en) 2001-09-17 2002-09-13 Selective operation of a multi-state non-volatile memory system in a binary mode

Publications (2)

Publication Number Publication Date
DE60214023D1 true DE60214023D1 (de) 2006-09-28
DE60214023T2 DE60214023T2 (de) 2007-03-29

Family

ID=26923119

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60214023T Expired - Lifetime DE60214023T2 (de) 2001-09-17 2002-09-13 Selektiver betrieb eines nichtflüchtigen mehrzustandsspeichersystems in einem binärmodus

Country Status (9)

Country Link
US (3) US6717847B2 (de)
EP (1) EP1433182B1 (de)
JP (1) JP2005503640A (de)
KR (1) KR100918591B1 (de)
CN (1) CN1555559B (de)
AT (1) ATE336788T1 (de)
DE (1) DE60214023T2 (de)
TW (1) TW574696B (de)
WO (1) WO2003025949A1 (de)

Families Citing this family (212)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100544175B1 (ko) * 1999-05-08 2006-01-23 삼성전자주식회사 링킹 타입 정보를 저장하는 기록 매체와 결함 영역 처리 방법
US7463195B2 (en) * 2001-06-21 2008-12-09 Rosum Corporation Position location using global positioning signals augmented by broadcast television signals
US6522580B2 (en) * 2001-06-27 2003-02-18 Sandisk Corporation Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
US6717847B2 (en) * 2001-09-17 2004-04-06 Sandisk Corporation Selective operation of a multi-state non-volatile memory system in a binary mode
US7554842B2 (en) * 2001-09-17 2009-06-30 Sandisk Corporation Multi-purpose non-volatile memory card
KR100977942B1 (ko) * 2002-09-20 2010-08-24 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 보상 장치 및 방법, 가요성 디스플레이 및 휴대형 장치
US7571287B2 (en) 2003-03-13 2009-08-04 Marvell World Trade Ltd. Multiport memory architecture, devices and systems including the same, and methods of using the same
US7254690B2 (en) * 2003-06-02 2007-08-07 S. Aqua Semiconductor Llc Pipelined semiconductor memories and systems
US7139213B2 (en) 2003-06-02 2006-11-21 Silicon Aquarius, Inc. Multiple data path memories and systems
KR100512181B1 (ko) * 2003-07-11 2005-09-05 삼성전자주식회사 멀티 레벨 셀을 갖는 플래시 메모리 장치와 그것의 독출방법 및 프로그램 방법
US6917542B2 (en) * 2003-07-29 2005-07-12 Sandisk Corporation Detecting over programmed memory
KR20070007265A (ko) * 2003-12-30 2007-01-15 쌘디스크 코포레이션 제어 데이터 관리를 구비한 비휘발성 메모리 및 방법
US7433993B2 (en) 2003-12-30 2008-10-07 San Disk Corportion Adaptive metablocks
US7383375B2 (en) 2003-12-30 2008-06-03 Sandisk Corporation Data run programming
US7173863B2 (en) * 2004-03-08 2007-02-06 Sandisk Corporation Flash controller cache architecture
US7139864B2 (en) * 2003-12-30 2006-11-21 Sandisk Corporation Non-volatile memory and method with block management system
US7177977B2 (en) * 2004-03-19 2007-02-13 Sandisk Corporation Operating non-volatile memory without read disturb limitations
US7020017B2 (en) * 2004-04-06 2006-03-28 Sandisk Corporation Variable programming of non-volatile memory
US7180775B2 (en) * 2004-08-05 2007-02-20 Msystems Ltd. Different numbers of bits per cell in non-volatile memory devices
US7882299B2 (en) * 2004-12-21 2011-02-01 Sandisk Corporation System and method for use of on-chip non-volatile memory write cache
US7308525B2 (en) * 2005-01-10 2007-12-11 Sandisk Il Ltd. Method of managing a multi-bit cell flash memory with improved reliablility and performance
JP4768298B2 (ja) * 2005-03-28 2011-09-07 株式会社東芝 不揮発性半導体記憶装置
US7196946B2 (en) * 2005-04-05 2007-03-27 Sandisk Corporation Compensating for coupling in non-volatile storage
US7196928B2 (en) * 2005-04-05 2007-03-27 Sandisk Corporation Compensating for coupling during read operations of non-volatile memory
US7187585B2 (en) * 2005-04-05 2007-03-06 Sandisk Corporation Read operation for non-volatile storage that includes compensation for coupling
US7339834B2 (en) * 2005-06-03 2008-03-04 Sandisk Corporation Starting program voltage shift with cycling of non-volatile memory
JP4801935B2 (ja) * 2005-06-08 2011-10-26 株式会社東芝 半導体記憶装置
US7161831B2 (en) * 2005-06-10 2007-01-09 Macronix International Co., Ltd. Leaf plot analysis technique for multiple-side operated devices
EP1748446A1 (de) * 2005-07-28 2007-01-31 STMicroelectronics S.r.l. Zweiseitenprogrammierung
US7336538B2 (en) * 2005-07-28 2008-02-26 Stmicroelectronics S.R.L. Page buffer circuit and method for multi-level NAND programmable memories
KR100666185B1 (ko) * 2005-07-29 2007-01-09 삼성전자주식회사 3-레벨 불휘발성 반도체 메모리 장치 및 이에 대한구동방법
US7352626B1 (en) 2005-08-29 2008-04-01 Spansion Llc Voltage regulator with less overshoot and faster settling time
US7307878B1 (en) * 2005-08-29 2007-12-11 Spansion Llc Flash memory device having improved program rate
US7752382B2 (en) * 2005-09-09 2010-07-06 Sandisk Il Ltd Flash memory storage system and method
US7957204B1 (en) 2005-09-20 2011-06-07 Spansion Llc Flash memory programming power reduction
US8358543B1 (en) 2005-09-20 2013-01-22 Spansion Llc Flash memory programming with data dependent control of source lines
US7433228B2 (en) * 2005-09-20 2008-10-07 Spansion Llc Multi-bit flash memory device having improved program rate
US7366022B2 (en) * 2005-10-27 2008-04-29 Sandisk Corporation Apparatus for programming of multi-state non-volatile memory using smart verify
US7509471B2 (en) * 2005-10-27 2009-03-24 Sandisk Corporation Methods for adaptively handling data writes in non-volatile memories
US7631162B2 (en) 2005-10-27 2009-12-08 Sandisck Corporation Non-volatile memory with adaptive handling of data writes
US7301817B2 (en) * 2005-10-27 2007-11-27 Sandisk Corporation Method for programming of multi-state non-volatile memory using smart verify
US7262994B2 (en) * 2005-12-06 2007-08-28 Sandisk Corporation System for reducing read disturb for non-volatile storage
US7349258B2 (en) * 2005-12-06 2008-03-25 Sandisk Corporation Reducing read disturb for non-volatile storage
US7366013B2 (en) * 2005-12-09 2008-04-29 Micron Technology, Inc. Single level cell programming in a multiple level cell non-volatile memory device
US7245556B1 (en) * 2005-12-28 2007-07-17 Sandisk Corporation Methods for writing non-volatile memories for increased endurance
US20070150644A1 (en) * 2005-12-28 2007-06-28 Yosi Pinto System for writing non-volatile memories for increased endurance
US7443726B2 (en) * 2005-12-29 2008-10-28 Sandisk Corporation Systems for alternate row-based reading and writing for non-volatile memory
US7349260B2 (en) * 2005-12-29 2008-03-25 Sandisk Corporation Alternate row-based reading and writing for non-volatile memory
JP2007200388A (ja) * 2006-01-24 2007-08-09 Megachips Lsi Solutions Inc 半導体記憶装置及び半導体記憶装置の使用方法
EP1814123A1 (de) * 2006-01-26 2007-08-01 Samsung Electronics Co.,Ltd. Nichtflüchtiger Speicher in NAND-Anordnung mit besonderer Bitleitungs-Struktur
US7499319B2 (en) * 2006-03-03 2009-03-03 Sandisk Corporation Read operation for non-volatile storage with compensation for coupling
US7436733B2 (en) * 2006-03-03 2008-10-14 Sandisk Corporation System for performing read operation on non-volatile storage with compensation for coupling
US7397703B2 (en) * 2006-03-21 2008-07-08 Freescale Semiconductor, Inc. Non-volatile memory with controlled program/erase
US7436713B2 (en) 2006-04-12 2008-10-14 Sandisk Corporation Reducing the impact of program disturb
US7499326B2 (en) 2006-04-12 2009-03-03 Sandisk Corporation Apparatus for reducing the impact of program disturb
US7426137B2 (en) 2006-04-12 2008-09-16 Sandisk Corporation Apparatus for reducing the impact of program disturb during read
US7515463B2 (en) 2006-04-12 2009-04-07 Sandisk Corporation Reducing the impact of program disturb during read
US7606075B2 (en) * 2006-04-19 2009-10-20 Micron Technology, Inc. Read operation for NAND memory
JP2007305210A (ja) 2006-05-10 2007-11-22 Toshiba Corp 半導体記憶装置
WO2007132452A2 (en) * 2006-05-12 2007-11-22 Anobit Technologies Reducing programming error in memory devices
WO2007132457A2 (en) * 2006-05-12 2007-11-22 Anobit Technologies Ltd. Combined distortion estimation and error correction coding for memory devices
CN103258572B (zh) 2006-05-12 2016-12-07 苹果公司 存储设备中的失真估计和消除
WO2007132456A2 (en) * 2006-05-12 2007-11-22 Anobit Technologies Ltd. Memory device with adaptive capacity
US7518911B2 (en) * 2006-05-25 2009-04-14 Sandisk Corporation Method and system for programming multi-state non-volatile memory devices
US7457163B2 (en) * 2006-06-01 2008-11-25 Sandisk Corporation System for verifying non-volatile storage using different voltages
US7440331B2 (en) * 2006-06-01 2008-10-21 Sandisk Corporation Verify operation for non-volatile storage using different voltages
US7450421B2 (en) * 2006-06-02 2008-11-11 Sandisk Corporation Data pattern sensitivity compensation using different voltage
US7310272B1 (en) * 2006-06-02 2007-12-18 Sandisk Corporation System for performing data pattern sensitivity compensation using different voltage
US7352628B2 (en) * 2006-06-19 2008-04-01 Sandisk Corporation Systems for programming differently sized margins and sensing with compensations at select states for improved read operations in a non-volatile memory
US7606084B2 (en) * 2006-06-19 2009-10-20 Sandisk Corporation Programming differently sized margins and sensing with compensations at select states for improved read operations in non-volatile memory
US20070297247A1 (en) * 2006-06-26 2007-12-27 Gerrit Jan Hemink Method for programming non-volatile memory using variable amplitude programming pulses
TW200807421A (en) * 2006-06-26 2008-02-01 Sandisk Corp Method and system for programming non-volatile memory using variable amplitude programming pulses
KR100736103B1 (ko) * 2006-06-27 2007-07-06 삼성전자주식회사 비휘발성 메모리, 상기 비휘발성 메모리의 데이터 유효성을판단하는 장치 및 방법
US7400535B2 (en) * 2006-07-20 2008-07-15 Sandisk Corporation System that compensates for coupling during programming
US7443729B2 (en) * 2006-07-20 2008-10-28 Sandisk Corporation System that compensates for coupling based on sensing a neighbor using coupling
US7506113B2 (en) * 2006-07-20 2009-03-17 Sandisk Corporation Method for configuring compensation
US7885119B2 (en) * 2006-07-20 2011-02-08 Sandisk Corporation Compensating for coupling during programming
US7522454B2 (en) * 2006-07-20 2009-04-21 Sandisk Corporation Compensating for coupling based on sensing a neighbor using coupling
US7495953B2 (en) * 2006-07-20 2009-02-24 Sandisk Corporation System for configuring compensation
US7904639B2 (en) * 2006-08-22 2011-03-08 Mosaid Technologies Incorporated Modular command structure for memory and memory system
US8407395B2 (en) 2006-08-22 2013-03-26 Mosaid Technologies Incorporated Scalable memory system
EP1892720B1 (de) * 2006-08-24 2011-07-27 STMicroelectronics Srl Nichtflüchtiger, elektrisch programmierbarer Speicher mit einer Vielzahl von Speicherdichten und Datenübertragungs-Geschwindigkeiten
US8060806B2 (en) 2006-08-27 2011-11-15 Anobit Technologies Ltd. Estimation of non-linear distortion in memory devices
KR100855467B1 (ko) * 2006-09-27 2008-09-01 삼성전자주식회사 이종 셀 타입을 지원하는 비휘발성 메모리를 위한 맵핑장치 및 방법
US7684247B2 (en) * 2006-09-29 2010-03-23 Sandisk Corporation Reverse reading in non-volatile memory with compensation for coupling
US7447076B2 (en) * 2006-09-29 2008-11-04 Sandisk Corporation Systems for reverse reading in non-volatile memory with compensation for coupling
KR100830580B1 (ko) * 2006-10-20 2008-05-21 삼성전자주식회사 플래시 메모리 장치를 포함한 메모리 시스템의 데이터 복원방법
CN101601094B (zh) 2006-10-30 2013-03-27 苹果公司 使用多个门限读取存储单元的方法
WO2008053472A2 (en) 2006-10-30 2008-05-08 Anobit Technologies Ltd. Reading memory cells using multiple thresholds
KR100771521B1 (ko) 2006-10-30 2007-10-30 삼성전자주식회사 멀티 레벨 셀을 포함하는 플래시 메모리 장치 및 그것의데이터 쓰기 방법
US7924648B2 (en) 2006-11-28 2011-04-12 Anobit Technologies Ltd. Memory power and performance management
US7511996B2 (en) 2006-11-30 2009-03-31 Mosaid Technologies Incorporated Flash memory program inhibit scheme
US8151163B2 (en) * 2006-12-03 2012-04-03 Anobit Technologies Ltd. Automatic defect management in memory devices
US7900102B2 (en) * 2006-12-17 2011-03-01 Anobit Technologies Ltd. High-speed programming of memory devices
US7593263B2 (en) * 2006-12-17 2009-09-22 Anobit Technologies Ltd. Memory device with reduced reading latency
US7616505B2 (en) * 2006-12-28 2009-11-10 Sandisk Corporation Complete word line look ahead with efficient data latch assignment in non-volatile memory read operations
US7616506B2 (en) * 2006-12-28 2009-11-10 Sandisk Corporation Systems for complete word line look ahead with efficient data latch assignment in non-volatile memory read operations
US7590002B2 (en) * 2006-12-29 2009-09-15 Sandisk Corporation Resistance sensing and compensation for non-volatile storage
US7495962B2 (en) * 2006-12-29 2009-02-24 Sandisk Corporation Alternating read mode
US7518923B2 (en) * 2006-12-29 2009-04-14 Sandisk Corporation Margined neighbor reading for non-volatile memory read operations including coupling compensation
US7440324B2 (en) * 2006-12-29 2008-10-21 Sandisk Corporation Apparatus with alternating read mode
US7606070B2 (en) * 2006-12-29 2009-10-20 Sandisk Corporation Systems for margined neighbor reading for non-volatile memory read operations including coupling compensation
US7616498B2 (en) * 2006-12-29 2009-11-10 Sandisk Corporation Non-volatile storage system with resistance sensing and compensation
US7751240B2 (en) 2007-01-24 2010-07-06 Anobit Technologies Ltd. Memory device with negative thresholds
US8151166B2 (en) 2007-01-24 2012-04-03 Anobit Technologies Ltd. Reduction of back pattern dependency effects in memory devices
CA2672245A1 (en) * 2007-02-07 2008-08-14 Mosaid Technologies Incorporated Source side asymmetrical precharge programming scheme
US7646636B2 (en) 2007-02-16 2010-01-12 Mosaid Technologies Incorporated Non-volatile memory with dynamic multi-mode operation
EP2109862A4 (de) * 2007-02-16 2010-08-04 Mosaid Technologies Inc Halbleiterbauelement und verfahren zur veringerung des stromverbrauchs in einem system mit verbundenen bauelementen
US8086785B2 (en) * 2007-02-22 2011-12-27 Mosaid Technologies Incorporated System and method of page buffer operation for memory devices
WO2008101316A1 (en) 2007-02-22 2008-08-28 Mosaid Technologies Incorporated Apparatus and method for using a page buffer of a memory device as a temporary cache
CN101715595A (zh) * 2007-03-12 2010-05-26 爱诺彼得技术有限责任公司 存储器单元读取阈的自适应估计
US7535764B2 (en) * 2007-03-21 2009-05-19 Sandisk Corporation Adjusting resistance of non-volatile memory using dummy memory cells
US8001320B2 (en) * 2007-04-22 2011-08-16 Anobit Technologies Ltd. Command interface for memory devices
US8234545B2 (en) * 2007-05-12 2012-07-31 Apple Inc. Data storage with incremental redundancy
WO2008139441A2 (en) 2007-05-12 2008-11-20 Anobit Technologies Ltd. Memory device with internal signal processing unit
ITMI20071012A1 (it) 2007-05-18 2008-11-19 St Microelectronics Srl Dispositivo di memoria migliorato a veloce programmazione
US8654592B2 (en) * 2007-06-12 2014-02-18 Micron Technology, Inc. Memory devices with isolation structures
US7460398B1 (en) * 2007-06-19 2008-12-02 Micron Technology, Inc. Programming a memory with varying bits per cell
US7925936B1 (en) 2007-07-13 2011-04-12 Anobit Technologies Ltd. Memory device with non-uniform programming levels
US8127104B1 (en) 2007-08-06 2012-02-28 Marvell International Ltd. Alignment matrix memory copy
US8259497B2 (en) 2007-08-06 2012-09-04 Apple Inc. Programming schemes for multi-level analog memory cells
US7802132B2 (en) * 2007-08-17 2010-09-21 Intel Corporation Technique to improve and extend endurance and reliability of multi-level memory cells in a memory device
US8174905B2 (en) * 2007-09-19 2012-05-08 Anobit Technologies Ltd. Programming orders for reducing distortion in arrays of multi-level analog memory cells
JP5314873B2 (ja) * 2007-10-05 2013-10-16 ルネサスエレクトロニクス株式会社 半導体装置
US7773413B2 (en) 2007-10-08 2010-08-10 Anobit Technologies Ltd. Reliable data storage in analog memory cells in the presence of temperature variations
US8068360B2 (en) * 2007-10-19 2011-11-29 Anobit Technologies Ltd. Reading analog memory cells using built-in multi-threshold commands
US8000141B1 (en) 2007-10-19 2011-08-16 Anobit Technologies Ltd. Compensation for voltage drifts in analog memory cells
WO2009050703A2 (en) 2007-10-19 2009-04-23 Anobit Technologies Data storage in analog memory cell arrays having erase failures
US7742335B2 (en) * 2007-10-31 2010-06-22 Micron Technology, Inc. Non-volatile multilevel memory cells
WO2009063450A2 (en) 2007-11-13 2009-05-22 Anobit Technologies Optimized selection of memory units in multi-unit memory devices
US7849275B2 (en) * 2007-11-19 2010-12-07 Sandforce, Inc. System, method and a computer program product for writing data to different storage devices based on write frequency
US7903486B2 (en) * 2007-11-19 2011-03-08 Sandforce, Inc. System, method, and computer program product for increasing a lifetime of a plurality of blocks of memory
US8688947B1 (en) 2007-11-21 2014-04-01 Marvell International Ltd. Aligned data access
US8225181B2 (en) 2007-11-30 2012-07-17 Apple Inc. Efficient re-read operations from memory devices
US8209588B2 (en) * 2007-12-12 2012-06-26 Anobit Technologies Ltd. Efficient interference cancellation in analog memory cell arrays
US8456905B2 (en) 2007-12-16 2013-06-04 Apple Inc. Efficient data storage in multi-plane memory devices
US7983099B2 (en) 2007-12-20 2011-07-19 Mosaid Technologies Incorporated Dual function compatible non-volatile memory device
US8085586B2 (en) * 2007-12-27 2011-12-27 Anobit Technologies Ltd. Wear level estimation in analog memory cells
US7940572B2 (en) * 2008-01-07 2011-05-10 Mosaid Technologies Incorporated NAND flash memory having multiple cell substrates
CN101911207B (zh) * 2008-01-16 2014-05-07 富士通株式会社 半导体存储装置、控制装置、控制方法
US8156398B2 (en) * 2008-02-05 2012-04-10 Anobit Technologies Ltd. Parameter estimation based on error correction code parity check equations
US7924587B2 (en) * 2008-02-21 2011-04-12 Anobit Technologies Ltd. Programming of analog memory cells using a single programming pulse per state transition
US7864573B2 (en) 2008-02-24 2011-01-04 Anobit Technologies Ltd. Programming analog memory cells for reduced variance after retention
US8230300B2 (en) * 2008-03-07 2012-07-24 Apple Inc. Efficient readout from analog memory cells using data compression
US8059457B2 (en) * 2008-03-18 2011-11-15 Anobit Technologies Ltd. Memory device with multiple-accuracy read commands
US8400858B2 (en) 2008-03-18 2013-03-19 Apple Inc. Memory device with reduced sense time readout
US8131915B1 (en) 2008-04-11 2012-03-06 Marvell Intentional Ltd. Modifying or overwriting data stored in flash memory
US8683085B1 (en) 2008-05-06 2014-03-25 Marvell International Ltd. USB interface configurable for host or device mode
US7848144B2 (en) * 2008-06-16 2010-12-07 Sandisk Corporation Reverse order page writing in flash memories
US8111548B2 (en) * 2008-07-21 2012-02-07 Sandisk Technologies Inc. Programming non-volatile storage using binary and multi-state programming processes
US7995388B1 (en) 2008-08-05 2011-08-09 Anobit Technologies Ltd. Data storage using modified voltages
US7924613B1 (en) 2008-08-05 2011-04-12 Anobit Technologies Ltd. Data storage in analog memory cells with protection against programming interruption
US8949684B1 (en) 2008-09-02 2015-02-03 Apple Inc. Segmented data storage
US8169825B1 (en) 2008-09-02 2012-05-01 Anobit Technologies Ltd. Reliable data storage in analog memory cells subjected to long retention periods
US8000135B1 (en) 2008-09-14 2011-08-16 Anobit Technologies Ltd. Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
US8482978B1 (en) 2008-09-14 2013-07-09 Apple Inc. Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
US8239734B1 (en) 2008-10-15 2012-08-07 Apple Inc. Efficient data storage in storage device arrays
US8261159B1 (en) 2008-10-30 2012-09-04 Apple, Inc. Data scrambling schemes for memory devices
US8208304B2 (en) * 2008-11-16 2012-06-26 Anobit Technologies Ltd. Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
US8037235B2 (en) * 2008-12-18 2011-10-11 Mosaid Technologies Incorporated Device and method for transferring data to a non-volatile memory device
US8194481B2 (en) * 2008-12-18 2012-06-05 Mosaid Technologies Incorporated Semiconductor device with main memory unit and auxiliary memory unit requiring preset operation
US8397131B1 (en) 2008-12-31 2013-03-12 Apple Inc. Efficient readout schemes for analog memory cell devices
US8248831B2 (en) 2008-12-31 2012-08-21 Apple Inc. Rejuvenation of analog memory cells
US8924661B1 (en) 2009-01-18 2014-12-30 Apple Inc. Memory system including a controller and processors associated with memory devices
US8228701B2 (en) 2009-03-01 2012-07-24 Apple Inc. Selective activation of programming schemes in analog memory cell arrays
US8423710B1 (en) 2009-03-23 2013-04-16 Marvell International Ltd. Sequential writes to flash memory
US8259506B1 (en) 2009-03-25 2012-09-04 Apple Inc. Database of memory read thresholds
US8832354B2 (en) * 2009-03-25 2014-09-09 Apple Inc. Use of host system resources by memory controller
US8238157B1 (en) 2009-04-12 2012-08-07 Apple Inc. Selective re-programming of analog memory cells
US8213236B1 (en) 2009-04-21 2012-07-03 Marvell International Ltd. Flash memory
US7916533B2 (en) * 2009-06-24 2011-03-29 Sandisk Corporation Forecasting program disturb in memory by detecting natural threshold voltage distribution
US8479080B1 (en) 2009-07-12 2013-07-02 Apple Inc. Adaptive over-provisioning in memory systems
US8495465B1 (en) 2009-10-15 2013-07-23 Apple Inc. Error correction coding over multiple memory pages
US8214700B2 (en) 2009-10-28 2012-07-03 Sandisk Technologies Inc. Non-volatile memory and method with post-write read and adaptive re-write to manage errors
US8423866B2 (en) * 2009-10-28 2013-04-16 SanDisk Technologies, Inc. Non-volatile memory and method with post-write read and adaptive re-write to manage errors
US8634240B2 (en) * 2009-10-28 2014-01-21 SanDisk Technologies, Inc. Non-volatile memory and method with accelerated post-write read to manage errors
US8677054B1 (en) 2009-12-16 2014-03-18 Apple Inc. Memory management schemes for non-volatile memory devices
US8694814B1 (en) 2010-01-10 2014-04-08 Apple Inc. Reuse of host hibernation storage space by memory controller
US8572311B1 (en) 2010-01-11 2013-10-29 Apple Inc. Redundant data storage in multi-die memory systems
US8694853B1 (en) 2010-05-04 2014-04-08 Apple Inc. Read commands for reading interfering memory cells
US8572423B1 (en) 2010-06-22 2013-10-29 Apple Inc. Reducing peak current in memory systems
US8756394B1 (en) 2010-07-07 2014-06-17 Marvell International Ltd. Multi-dimension memory timing tuner
US8595591B1 (en) 2010-07-11 2013-11-26 Apple Inc. Interference-aware assignment of programming levels in analog memory cells
US9104580B1 (en) 2010-07-27 2015-08-11 Apple Inc. Cache memory for hybrid disk drives
US8767459B1 (en) 2010-07-31 2014-07-01 Apple Inc. Data storage in analog memory cells across word lines using a non-integer number of bits per cell
US8856475B1 (en) 2010-08-01 2014-10-07 Apple Inc. Efficient selection of memory blocks for compaction
US8694854B1 (en) 2010-08-17 2014-04-08 Apple Inc. Read threshold setting based on soft readout statistics
US9424930B2 (en) * 2010-09-15 2016-08-23 Sandisk Technologies Llc Apparatus, system, and method for non-volatile storage element programming
US9021181B1 (en) 2010-09-27 2015-04-28 Apple Inc. Memory management for unifying memory cell conditions by using maximum time intervals
US8825977B1 (en) * 2010-09-28 2014-09-02 Western Digital Technologies, Inc. Hybrid drive writing copy of data to disk when non-volatile semiconductor memory nears end of life
US8456911B2 (en) 2011-06-07 2013-06-04 Sandisk Technologies Inc. Intelligent shifting of read pass voltages for non-volatile storage
US8726104B2 (en) 2011-07-28 2014-05-13 Sandisk Technologies Inc. Non-volatile memory and method with accelerated post-write read using combined verification of multiple pages
US8566671B1 (en) 2012-06-29 2013-10-22 Sandisk Technologies Inc. Configurable accelerated post-write read to manage errors
KR101949987B1 (ko) * 2012-12-18 2019-02-20 에스케이하이닉스 주식회사 데이터 저장 장치 및 그것의 동작 방법
US8913428B2 (en) 2013-01-25 2014-12-16 Sandisk Technologies Inc. Programming non-volatile storage system with multiple memory die
US9026757B2 (en) 2013-01-25 2015-05-05 Sandisk Technologies Inc. Non-volatile memory programming data preservation
US8942043B2 (en) 2013-03-04 2015-01-27 Sandisk Technologies Inc. Non-volatile storage with process that reduces read disturb on end wordlines
US9117530B2 (en) 2013-03-14 2015-08-25 Sandisk Technologies Inc. Preserving data from adjacent word lines while programming binary non-volatile storage elements
US9009568B2 (en) 2013-08-09 2015-04-14 Sandisk Technologies Inc. Sensing parameter management in non-volatile memory storage system to compensate for broken word lines
US9213601B2 (en) 2013-12-03 2015-12-15 Sandisk Technologies Inc. Adaptive data re-compaction after post-write read verification operations
US10114562B2 (en) 2014-09-16 2018-10-30 Sandisk Technologies Llc Adaptive block allocation in nonvolatile memory
KR102456104B1 (ko) * 2015-08-24 2022-10-19 삼성전자주식회사 데이터 신뢰성에 따라 동작 조건을 변경하는 저장 장치의 동작 방법
KR102393323B1 (ko) 2015-08-24 2022-05-03 삼성전자주식회사 재사용 주기를 이용하여 사용자 데이터를 쓰기 위한 워드라인을 결정하는 저장 장치의 동작 방법
KR102333746B1 (ko) 2015-09-02 2021-12-01 삼성전자주식회사 재사용 주기에 따라 마모도를 관리하는 저장 장치의 동작 방법
US10248499B2 (en) 2016-06-24 2019-04-02 Sandisk Technologies Llc Non-volatile storage system using two pass programming with bit error control
US9817593B1 (en) 2016-07-11 2017-11-14 Sandisk Technologies Llc Block management in non-volatile memory system with non-blocking control sync system
US10437512B2 (en) * 2016-12-29 2019-10-08 Intel Corporation Techniques for non-volatile memory page retirement
JP2018160056A (ja) * 2017-03-22 2018-10-11 東芝メモリ株式会社 メモリコントローラ、メモリシステムおよび制御方法
US10956076B2 (en) 2017-05-23 2021-03-23 Texas Instruments Incorporated Integrated circuit capable of switching between non-volatile memory-based and volatile memory-based processor execution
US10553301B2 (en) 2017-06-03 2020-02-04 Sandisk Technologies Llc Dynamic read table block filter
US11556416B2 (en) 2021-05-05 2023-01-17 Apple Inc. Controlling memory readout reliability and throughput by adjusting distance between read thresholds
US11847342B2 (en) 2021-07-28 2023-12-19 Apple Inc. Efficient transfer of hard data and confidence levels in reading a nonvolatile memory

Family Cites Families (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5043940A (en) 1988-06-08 1991-08-27 Eliyahou Harari Flash EEPROM memory systems having multistate storage cells
US5095344A (en) 1988-06-08 1992-03-10 Eliyahou Harari Highly compact eprom and flash eeprom devices
US5172338B1 (en) 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
DE69034191T2 (de) 1989-04-13 2005-11-24 Sandisk Corp., Sunnyvale EEPROM-System mit aus mehreren Chips bestehender Blocklöschung
JPH0679293B2 (ja) 1990-10-15 1994-10-05 富士通株式会社 計算機システム
US5663901A (en) 1991-04-11 1997-09-02 Sandisk Corporation Computer memory cards using flash EEPROM integrated circuit chips and memory-controller systems
US5369757A (en) 1991-06-18 1994-11-29 Digital Equipment Corporation Recovery logging in the presence of snapshot files by ordering of buffer pool flushing
US5287478A (en) 1991-08-06 1994-02-15 R-Byte, Inc. Digital data tape storage system utilizing plurality of read/write heads with system diagnostic capability
US5430859A (en) 1991-07-26 1995-07-04 Sundisk Corporation Solid state memory system including plural memory chips and a serialized bus
US5187338A (en) 1991-10-04 1993-02-16 Robertshaw Controls Company Fluid pressure operated switch and contact assembly
US5359569A (en) 1991-10-29 1994-10-25 Hitachi Ltd. Semiconductor memory
TW261687B (de) 1991-11-26 1995-11-01 Hitachi Seisakusyo Kk
US5313585A (en) 1991-12-17 1994-05-17 Jeffries Kenneth L Disk drive array with request fragmentation
US5361227A (en) 1991-12-19 1994-11-01 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same
US5712180A (en) 1992-01-14 1998-01-27 Sundisk Corporation EEPROM with split gate source side injection
US5657332A (en) 1992-05-20 1997-08-12 Sandisk Corporation Soft errors handling in EEPROM devices
US5450341A (en) 1992-08-31 1995-09-12 Nippon Steel Corporation Non-volatile semiconductor memory device having memory cells, each for at least three different data writable thereinto selectively and a method of using the same
US5479633A (en) 1992-10-30 1995-12-26 Intel Corporation Method of controlling clean-up of a solid state memory disk storing floating sector data
US5488711A (en) 1993-04-01 1996-01-30 Microchip Technology Incorporated Serial EEPROM device and associated method for reducing data load time using a page mode write cache
US5555204A (en) 1993-06-29 1996-09-10 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device
KR0169267B1 (ko) 1993-09-21 1999-02-01 사토 후미오 불휘발성 반도체 기억장치
GB9326499D0 (en) 1993-12-24 1994-03-02 Deas Alexander R Flash memory system with arbitrary block size
US5485422A (en) 1994-06-02 1996-01-16 Intel Corporation Drain bias multiplexing for multiple bit flash cell
US5515317A (en) 1994-06-02 1996-05-07 Intel Corporation Addressing modes for a dynamic single bit per cell to multiple bit per cell memory
US5539690A (en) 1994-06-02 1996-07-23 Intel Corporation Write verify schemes for flash memory with multilevel cells
US5640032A (en) 1994-09-09 1997-06-17 Nippon Steel Corporation Non-volatile semiconductor memory device with improved rewrite speed
JPH08171515A (ja) 1994-12-19 1996-07-02 Nec Corp ディスクキャッシュにおけるメモリ管理方式
US5475693A (en) 1994-12-27 1995-12-12 Intel Corporation Error management processes for flash EEPROM memory arrays
US5606532A (en) 1995-03-17 1997-02-25 Atmel Corporation EEPROM array with flash-like core
US5671388A (en) 1995-05-03 1997-09-23 Intel Corporation Method and apparatus for performing write operations in multi-level cell storage device
JPH08328762A (ja) 1995-06-06 1996-12-13 Mitsubishi Electric Corp 半導体ディスク装置及びそのメモリ管理方法
DE69635105D1 (de) * 1996-01-31 2005-09-29 St Microelectronics Srl Mehrstufige Speicherschaltungen und entsprechende Lese- und Schreibverfahren
US5903495A (en) 1996-03-18 1999-05-11 Kabushiki Kaisha Toshiba Semiconductor device and memory system
JP3200012B2 (ja) * 1996-04-19 2001-08-20 株式会社東芝 記憶システム
KR100205309B1 (ko) * 1996-07-23 1999-07-01 구본준 비휘발성 메모리셀 및 이 비휘발성 메모리셀을 프로그래밍하는 방법
JP3930074B2 (ja) * 1996-09-30 2007-06-13 株式会社ルネサステクノロジ 半導体集積回路及びデータ処理システム
US5862074A (en) 1996-10-04 1999-01-19 Samsung Electronics Co., Ltd. Integrated circuit memory devices having reconfigurable nonvolatile multi-bit memory cells therein and methods of operating same
US5890192A (en) 1996-11-05 1999-03-30 Sandisk Corporation Concurrent write of multiple chunks of data into multiple subarrays of flash EEPROM
KR100259972B1 (ko) 1997-01-21 2000-06-15 윤종용 메모리 셀당 2개 이상의 저장 상태들을 갖는 불휘발성 반도체 메모리 장치
GB2325546B (en) 1997-05-21 2001-10-17 Motorola Inc Electrically programmable memory and method of programming
US5930167A (en) 1997-07-30 1999-07-27 Sandisk Corporation Multi-state non-volatile flash memory capable of being its own two state write cache
US5851881A (en) 1997-10-06 1998-12-22 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making monos flash memory for multi-level logic
US5867429A (en) 1997-11-19 1999-02-02 Sandisk Corporation High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates
KR100327421B1 (ko) * 1997-12-31 2002-07-27 주식회사 하이닉스반도체 비휘발성 메모리 소자의 프로그램 시스템 및 그의 프로그램 방법
KR100332950B1 (ko) 1998-04-10 2002-08-21 삼성전자 주식회사 단일비트동작모드와다중비트동작모드를갖는불휘발성반도체메모리장치및그것의기입/독출방법
JP2000106276A (ja) 1998-09-28 2000-04-11 Fuji Photo Film Co Ltd フルカラー発光デバイス
KR100371022B1 (ko) * 1998-11-26 2003-07-16 주식회사 하이닉스반도체 다중비트 메모리셀의 데이터 센싱장치
JP2001006374A (ja) * 1999-06-17 2001-01-12 Hitachi Ltd 半導体記憶装置及びシステム
JP2001093288A (ja) * 1999-09-20 2001-04-06 Toshiba Corp 不揮発性半導体記憶装置
JP4282197B2 (ja) 2000-01-24 2009-06-17 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
US6426893B1 (en) 2000-02-17 2002-07-30 Sandisk Corporation Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
US6297988B1 (en) * 2000-02-25 2001-10-02 Advanced Micro Devices, Inc. Mode indicator for multi-level memory
US6426896B1 (en) * 2000-05-22 2002-07-30 Actrans System Inc. Flash memory cell with contactless bit line, and process of fabrication
US6345001B1 (en) 2000-09-14 2002-02-05 Sandisk Corporation Compressed event counting technique and application to a flash memory system
US6512263B1 (en) 2000-09-22 2003-01-28 Sandisk Corporation Non-volatile memory cell array having discontinuous source and drain diffusions contacted by continuous bit line conductors and methods of forming
US6522580B2 (en) 2001-06-27 2003-02-18 Sandisk Corporation Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
US6456528B1 (en) * 2001-09-17 2002-09-24 Sandisk Corporation Selective operation of a multi-state non-volatile memory system in a binary mode
US6717847B2 (en) 2001-09-17 2004-04-06 Sandisk Corporation Selective operation of a multi-state non-volatile memory system in a binary mode

Also Published As

Publication number Publication date
EP1433182B1 (de) 2006-08-16
CN1555559B (zh) 2012-05-30
US7385854B2 (en) 2008-06-10
US20030053334A1 (en) 2003-03-20
TW574696B (en) 2004-02-01
EP1433182A4 (de) 2004-12-29
US20070109864A1 (en) 2007-05-17
US6717847B2 (en) 2004-04-06
CN1555559A (zh) 2004-12-15
KR20040047835A (ko) 2004-06-05
DE60214023T2 (de) 2007-03-29
JP2005503640A (ja) 2005-02-03
US20040190337A1 (en) 2004-09-30
EP1433182A1 (de) 2004-06-30
US7177184B2 (en) 2007-02-13
ATE336788T1 (de) 2006-09-15
WO2003025949A1 (en) 2003-03-27
KR100918591B1 (ko) 2009-09-24

Similar Documents

Publication Publication Date Title
DE60214023D1 (de) Selektiver betrieb eines nichtflüchtigen mehrzustands-speichersystems in einem binärmodus
TW200617962A (en) Multi-purpose non-volatile memory card
KR100634333B1 (ko) 멀티레벨 메모리를 제공하는 방법, 이 방법을 프로세서기반 시스템으로 하여금 수행하도록 하는 인스트럭션을저장하는 매체를 포함하는 제품 및 멀티레벨 메모리
WO2005119695A3 (en) Memory device with user configurable density/performance
ATE387715T1 (de) Nichtflüchtiger halbleiterspeicher mit zykluszählwerte speichernden grossen löschblöcken
EP1134746A3 (de) Nichtflüchtige Halbleiterspeicher
TW200608404A (en) Operating non-volatile memory without read disturb limitations
JP2008158955A5 (de)
ATE490540T1 (de) Variable programmierung von nicht-flüchtigem speicher
ATE225075T1 (de) Speichersystem mit programmierbaren steuerparametern
TW200631023A (en) Page buffer and multi-state nonvolatile memory device including the same
WO2007050679A3 (en) Current driven switched magnetic storage cells having improved read and write margins and magnetic memories using such cells
WO2007134281A3 (en) Two levels of voltage regulation supplied for logic and data programming voltage of a memory device
EP1271553A3 (de) Verfahren zur Reduzierung von Kopplungseffekten zwischen multi-level Speicherelementen eines nicht flüchtigen Speichers
MY126674A (en) Programming non-volatile memory devices
KR960042759A (ko) 불휘발성 반도체 기억 장치
WO2007133645A3 (en) Nand architecture memory devices and operation
TW200710851A (en) Non-volatile memory device, and control method of non-volatile memory device
WO2004044917A3 (en) A combination nonvolatile memory using unified technology with byte, page and block write and simultaneous read and write operations
JP2001093288A5 (de)
KR101066938B1 (ko) 메모리 장치, 재구성 가능한 프로그래밍가능 논리 장치 및 ｆｐｇａ
TW200501160A (en) Multi-level memory device and methods for programming and reading the same
TW200719347A (en) High performance flash memory device capable of high density data storage
TW200601041A (en) Non-volatile memory and method with control data management
WO2008082824A3 (en) Multi-level operation in dual element cells using a supplemental programming level

Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: SANDISK CORP., MILPITAS, CALIF., US

8364 No opposition during term of opposition
R082 Change of representative

Ref document number: 1433182

Country of ref document: EP

Representative=s name: PATENTANWAELTE MAXTON LANGMAACK & PARTNER, DE