DE60205251D1 - Sputtertargets auf pt-co-basis - Google Patents
Sputtertargets auf pt-co-basisInfo
- Publication number
- DE60205251D1 DE60205251D1 DE60205251T DE60205251T DE60205251D1 DE 60205251 D1 DE60205251 D1 DE 60205251D1 DE 60205251 T DE60205251 T DE 60205251T DE 60205251 T DE60205251 T DE 60205251T DE 60205251 D1 DE60205251 D1 DE 60205251D1
- Authority
- DE
- Germany
- Prior art keywords
- alloy
- sputtertargets
- auf
- basis
- densify
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
- H01F41/183—Sputtering targets therefor
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US832181 | 2001-04-11 | ||
US09/832,181 US6797137B2 (en) | 2001-04-11 | 2001-04-11 | Mechanically alloyed precious metal magnetic sputtering targets fabricated using rapidly solidfied alloy powders and elemental Pt metal |
PCT/US2002/010909 WO2002083974A1 (en) | 2001-04-11 | 2002-04-08 | Pt-co based sputtering targets |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60205251D1 true DE60205251D1 (en) | 2005-09-01 |
DE60205251T2 DE60205251T2 (de) | 2006-05-24 |
Family
ID=25260918
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60205251T Expired - Fee Related DE60205251T2 (de) | 2001-04-11 | 2002-04-08 | Sputtertargets auf pt-co-basis |
Country Status (9)
Country | Link |
---|---|
US (2) | US6797137B2 (de) |
EP (2) | EP1595971A1 (de) |
JP (2) | JP3962690B2 (de) |
KR (2) | KR100682617B1 (de) |
CN (2) | CN100344789C (de) |
AT (1) | ATE300628T1 (de) |
DE (1) | DE60205251T2 (de) |
HK (1) | HK1064130A1 (de) |
WO (1) | WO2002083974A1 (de) |
Families Citing this family (68)
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US6506289B2 (en) | 2000-08-07 | 2003-01-14 | Symmorphix, Inc. | Planar optical devices and methods for their manufacture |
US6797137B2 (en) | 2001-04-11 | 2004-09-28 | Heraeus, Inc. | Mechanically alloyed precious metal magnetic sputtering targets fabricated using rapidly solidfied alloy powders and elemental Pt metal |
US6884327B2 (en) | 2002-03-16 | 2005-04-26 | Tao Pan | Mode size converter for a planar waveguide |
US7378356B2 (en) | 2002-03-16 | 2008-05-27 | Springworks, Llc | Biased pulse DC reactive sputtering of oxide films |
JP2005529239A (ja) * | 2002-06-07 | 2005-09-29 | ヘラエウス インコーポレーテッド | 処理従順な金属間化合物スパッタリングターゲットの製造方法 |
US6759005B2 (en) | 2002-07-23 | 2004-07-06 | Heraeus, Inc. | Fabrication of B/C/N/O/Si doped sputtering targets |
US20070189916A1 (en) * | 2002-07-23 | 2007-08-16 | Heraeus Incorporated | Sputtering targets and methods for fabricating sputtering targets having multiple materials |
US8404376B2 (en) | 2002-08-09 | 2013-03-26 | Infinite Power Solutions, Inc. | Metal film encapsulation |
US8021778B2 (en) | 2002-08-09 | 2011-09-20 | Infinite Power Solutions, Inc. | Electrochemical apparatus with barrier layer protected substrate |
US20070264564A1 (en) | 2006-03-16 | 2007-11-15 | Infinite Power Solutions, Inc. | Thin film battery on an integrated circuit or circuit board and method thereof |
US8535396B2 (en) | 2002-08-09 | 2013-09-17 | Infinite Power Solutions, Inc. | Electrochemical apparatus with barrier layer protected substrate |
US8445130B2 (en) | 2002-08-09 | 2013-05-21 | Infinite Power Solutions, Inc. | Hybrid thin-film battery |
US8394522B2 (en) | 2002-08-09 | 2013-03-12 | Infinite Power Solutions, Inc. | Robust metal film encapsulation |
US8236443B2 (en) | 2002-08-09 | 2012-08-07 | Infinite Power Solutions, Inc. | Metal film encapsulation |
US8431264B2 (en) | 2002-08-09 | 2013-04-30 | Infinite Power Solutions, Inc. | Hybrid thin-film battery |
TWI274199B (en) | 2002-08-27 | 2007-02-21 | Symmorphix Inc | Optically coupling into highly uniform waveguides |
US8728285B2 (en) | 2003-05-23 | 2014-05-20 | Demaray, Llc | Transparent conductive oxides |
FR2859618B1 (fr) * | 2003-09-11 | 2006-01-20 | Seb Sa | Surface de cuisson facile a nettoyer et article electromenager comportant une telle surface |
JP4110533B2 (ja) * | 2004-02-27 | 2008-07-02 | 日立金属株式会社 | Mo系ターゲット材の製造方法 |
SG119249A1 (en) * | 2004-08-05 | 2006-02-28 | Agency Science Tech & Res | An alloying system |
US7959769B2 (en) | 2004-12-08 | 2011-06-14 | Infinite Power Solutions, Inc. | Deposition of LiCoO2 |
US8636876B2 (en) | 2004-12-08 | 2014-01-28 | R. Ernest Demaray | Deposition of LiCoO2 |
US7494617B2 (en) * | 2005-04-18 | 2009-02-24 | Heraeus Inc. | Enhanced formulation of cobalt alloy matrix compositions |
US20060289294A1 (en) * | 2005-06-24 | 2006-12-28 | Heraeus, Inc. | Enhanced oxygen non-stoichiometry compensation for thin films |
US20070017803A1 (en) * | 2005-07-22 | 2007-01-25 | Heraeus, Inc. | Enhanced sputter target manufacturing method |
US7838133B2 (en) | 2005-09-02 | 2010-11-23 | Springworks, Llc | Deposition of perovskite and other compound ceramic films for dielectric applications |
WO2007062089A1 (en) * | 2005-11-22 | 2007-05-31 | Bodycote Imt, Inc. | Fabrication of ruthenium and ruthenium alloy sputtering targets with low oxygen content |
US20070169853A1 (en) * | 2006-01-23 | 2007-07-26 | Heraeus, Inc. | Magnetic sputter targets manufactured using directional solidification |
US8062708B2 (en) | 2006-09-29 | 2011-11-22 | Infinite Power Solutions, Inc. | Masking of and material constraint for depositing battery layers on flexible substrates |
US8197781B2 (en) | 2006-11-07 | 2012-06-12 | Infinite Power Solutions, Inc. | Sputtering target of Li3PO4 and method for producing same |
JP4970003B2 (ja) * | 2006-11-17 | 2012-07-04 | 山陽特殊製鋼株式会社 | Co−B系ターゲット材およびその製造方法 |
US20080145688A1 (en) | 2006-12-13 | 2008-06-19 | H.C. Starck Inc. | Method of joining tantalum clade steel structures |
JP5155565B2 (ja) * | 2007-01-04 | 2013-03-06 | 三井金属鉱業株式会社 | CoCrPt系スパッタリングターゲットおよびその製造方法 |
US8197894B2 (en) | 2007-05-04 | 2012-06-12 | H.C. Starck Gmbh | Methods of forming sputtering targets |
JP2009001861A (ja) * | 2007-06-21 | 2009-01-08 | Mitsubishi Materials Corp | 比透磁率の低い垂直磁気記録媒体膜形成用スパッタリングターゲット |
US9334557B2 (en) | 2007-12-21 | 2016-05-10 | Sapurast Research Llc | Method for sputter targets for electrolyte films |
US8268488B2 (en) | 2007-12-21 | 2012-09-18 | Infinite Power Solutions, Inc. | Thin film electrolyte for thin film batteries |
CN100549199C (zh) * | 2007-12-26 | 2009-10-14 | 安泰科技股份有限公司 | 一种磁控溅射Co-Cr-Ta合金靶的制造方法 |
JP5705549B2 (ja) | 2008-01-11 | 2015-04-22 | インフィニット パワー ソリューションズ, インコーポレイテッド | 薄膜電池および他のデバイスのための薄膜カプセル化 |
WO2009104509A1 (ja) * | 2008-02-18 | 2009-08-27 | 日立金属株式会社 | 軟磁性膜形成用Fe-Co系合金スパッタリングターゲット材 |
CN101983469B (zh) | 2008-04-02 | 2014-06-04 | 无穷动力解决方案股份有限公司 | 与能量采集关联的储能装置的无源过电压/欠电压控制和保护 |
US8968528B2 (en) * | 2008-04-14 | 2015-03-03 | United Technologies Corporation | Platinum-modified cathodic arc coating |
US8394243B1 (en) | 2008-07-24 | 2013-03-12 | Wd Media, Inc. | Sputtered cobalt oxide for perpendicular magnetic recording medium with low media noise |
EP2319101B1 (de) | 2008-08-11 | 2015-11-04 | Sapurast Research LLC | Stromvorrichtung mit integrierter sammelfläche zur gewinnung elektomagnetischer energie sowie verfahren dafür |
US8246903B2 (en) | 2008-09-09 | 2012-08-21 | H.C. Starck Inc. | Dynamic dehydriding of refractory metal powders |
JP5650646B2 (ja) | 2008-09-12 | 2015-01-07 | インフィニット パワー ソリューションズ, インコーポレイテッド | 電磁エネルギーを介したデータ通信のための一体型伝導性表面を有するエネルギーデバイスおよび電磁エネルギーを介したデータ通信のための方法 |
US8488276B1 (en) | 2008-09-30 | 2013-07-16 | WD Media, LLC | Perpendicular magnetic recording medium with grain isolation magnetic anistropy layer |
US8508193B2 (en) | 2008-10-08 | 2013-08-13 | Infinite Power Solutions, Inc. | Environmentally-powered wireless sensor module |
US20110003177A1 (en) * | 2009-07-06 | 2011-01-06 | Solar Applied Materials Technology Corp. | Method for producing sputtering target containing boron, thin film and magnetic recording media |
EP2474056B1 (de) | 2009-09-01 | 2016-05-04 | Sapurast Research LLC | Bestückte leiterplatte mit integrierter dünnschichtbatterie |
FI20105340A0 (fi) * | 2010-03-31 | 2010-03-31 | Metso Minerals Inc | Menetelmä ja järjestelmä kappaleen valmistamiseksi kuumaisostaattisella puristuksella, keerna, pinnoitteen esivalmiste, sekä keernan käyttö |
US20110300432A1 (en) | 2010-06-07 | 2011-12-08 | Snyder Shawn W | Rechargeable, High-Density Electrochemical Device |
JP4871406B1 (ja) * | 2010-08-06 | 2012-02-08 | 田中貴金属工業株式会社 | マグネトロンスパッタリング用ターゲットおよびその製造方法 |
WO2012077665A1 (ja) * | 2010-12-09 | 2012-06-14 | Jx日鉱日石金属株式会社 | 強磁性材スパッタリングターゲット |
US8993133B1 (en) | 2010-12-23 | 2015-03-31 | WD Media, LLC | Intermediate layer for perpendicular magnetic recording medium with high permeability grain boundaries |
TWI421353B (zh) * | 2011-03-18 | 2014-01-01 | Univ Nat Taiwan | 具奈米級釘紮效應的磁性材料 |
WO2013049274A2 (en) | 2011-09-29 | 2013-04-04 | H.C. Starck, Inc. | Large-area sputtering targets and methods of manufacturing large-area sputtering targets |
CN102343437B (zh) * | 2011-11-11 | 2014-03-26 | 宁波江丰电子材料有限公司 | 钨靶材的制作方法 |
JP5863411B2 (ja) * | 2011-11-17 | 2016-02-16 | 田中貴金属工業株式会社 | マグネトロンスパッタリング用ターゲットおよびその製造方法 |
JP5748639B2 (ja) * | 2011-11-17 | 2015-07-15 | 田中貴金属工業株式会社 | マグネトロンスパッタリング用ターゲットおよびその製造方法 |
US20160276143A1 (en) * | 2013-10-29 | 2016-09-22 | Tanaka Kikinzoku Kogyo K.K. | Target for magnetron sputtering |
CN106133185B (zh) * | 2014-03-27 | 2018-09-28 | 捷客斯金属株式会社 | 包含Ni-P合金或Ni-Pt-P合金的溅射靶及其制造方法 |
CN104032274B (zh) * | 2014-06-12 | 2016-07-20 | 贵研铂业股份有限公司 | 一种CoCrPt系合金溅射靶材和薄膜及其制备方法 |
US9685184B1 (en) | 2014-09-25 | 2017-06-20 | WD Media, LLC | NiFeX-based seed layer for magnetic recording media |
JP7086514B2 (ja) * | 2015-12-28 | 2022-06-20 | Jx金属株式会社 | コバルト製又はコバルト基合金製スパッタリングターゲット及びその製造方法 |
CN108076646B (zh) * | 2016-09-12 | 2019-12-13 | Jx金属株式会社 | 强磁性材料溅射靶 |
EP3884923B1 (de) * | 2018-11-22 | 2024-02-21 | Tanaka Kikinzoku Kogyo K.K. | Pt-co-basierte legierung für medizinische zwecke |
US11881238B1 (en) | 2022-08-03 | 2024-01-23 | Western Digital Technologies, Inc. | Sector mapout of low coercivity media for enhancing aerial density |
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US4135286A (en) * | 1977-12-22 | 1979-01-23 | United Technologies Corporation | Sputtering target fabrication method |
US4331476A (en) * | 1980-01-31 | 1982-05-25 | Tektronix, Inc. | Sputtering targets with low mobile ion contamination |
JPS6066425A (ja) * | 1983-09-22 | 1985-04-16 | Nippon Telegr & Teleph Corp <Ntt> | Lsi電極用の高純度モリブデンタ−ゲツトならびに高純度モリブデンシリサイドタ−ゲツトおよびその製造方法 |
AT383758B (de) * | 1985-12-23 | 1987-08-25 | Plansee Metallwerk | Verfahren zur herstellung eines sputter-targets |
JPH0791636B2 (ja) * | 1987-03-09 | 1995-10-04 | 日立金属株式会社 | スパツタリングタ−ゲツトおよびその製造方法 |
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DE3716852C1 (de) * | 1987-05-20 | 1988-07-14 | Demetron | Sputtertarget zur Erzeugung optisch transparenter Schichten und Verfahren zur Herstellung dieser Targets |
JPH0254760A (ja) | 1988-08-19 | 1990-02-23 | Hitachi Metals Ltd | ターゲットの製造方法 |
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JPH05148631A (ja) | 1991-10-31 | 1993-06-15 | Mitsubishi Materials Corp | スパツタリング用ターゲツト |
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JP2794382B2 (ja) * | 1993-05-07 | 1998-09-03 | 株式会社ジャパンエナジー | スパッタリング用シリサイドターゲット及びその製造方法 |
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JP2989169B2 (ja) * | 1997-08-08 | 1999-12-13 | 日立金属株式会社 | Ni−Al系金属間化合物ターゲットおよびその製造方法ならびに磁気記録媒体 |
US20020014406A1 (en) * | 1998-05-21 | 2002-02-07 | Hiroshi Takashima | Aluminum target material for sputtering and method for producing same |
JP2000038660A (ja) | 1998-07-21 | 2000-02-08 | Hitachi Metals Ltd | CoPt系スパッタリングターゲットおよびその製造方法ならびにCoPt系磁気記録媒体 |
JP2000038661A (ja) | 1998-07-21 | 2000-02-08 | Hitachi Metals Ltd | Co合金系ターゲット、その製造方法、スパッタリング装置、磁気記録膜および磁気記録装置 |
JP2000282229A (ja) | 1999-03-29 | 2000-10-10 | Hitachi Metals Ltd | CoPt系スパッタリングターゲットおよびその製造方法ならびにこれを用いた磁気記録膜およびCoPt系磁気記録媒体 |
US6042777A (en) * | 1999-08-03 | 2000-03-28 | Sony Corporation | Manufacturing of high density intermetallic sputter targets |
JP3527939B2 (ja) | 2000-03-16 | 2004-05-17 | 独立行政法人産業技術総合研究所 | スパッタリングターゲット組立体 |
US6514358B1 (en) * | 2000-04-05 | 2003-02-04 | Heraeus, Inc. | Stretching of magnetic materials to increase pass-through-flux (PTF) |
US6797137B2 (en) * | 2001-04-11 | 2004-09-28 | Heraeus, Inc. | Mechanically alloyed precious metal magnetic sputtering targets fabricated using rapidly solidfied alloy powders and elemental Pt metal |
-
2001
- 2001-04-11 US US09/832,181 patent/US6797137B2/en not_active Expired - Lifetime
-
2002
- 2002-04-08 KR KR1020057021065A patent/KR100682617B1/ko not_active IP Right Cessation
- 2002-04-08 AT AT02762011T patent/ATE300628T1/de not_active IP Right Cessation
- 2002-04-08 JP JP2002581711A patent/JP3962690B2/ja not_active Expired - Fee Related
- 2002-04-08 DE DE60205251T patent/DE60205251T2/de not_active Expired - Fee Related
- 2002-04-08 CN CNB028082052A patent/CN100344789C/zh not_active Expired - Fee Related
- 2002-04-08 WO PCT/US2002/010909 patent/WO2002083974A1/en active Application Filing
- 2002-04-08 KR KR1020037013298A patent/KR100668790B1/ko not_active IP Right Cessation
- 2002-04-08 EP EP05011333A patent/EP1595971A1/de not_active Withdrawn
- 2002-04-08 CN CNA2005101204543A patent/CN1827843A/zh active Pending
- 2002-04-08 EP EP02762011A patent/EP1395689B1/de not_active Expired - Lifetime
-
2004
- 2004-01-13 US US10/755,229 patent/US7229588B2/en not_active Expired - Fee Related
- 2004-09-10 HK HK04106859A patent/HK1064130A1/xx not_active IP Right Cessation
-
2005
- 2005-10-31 JP JP2005316988A patent/JP2006144124A/ja not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
KR20040007493A (ko) | 2004-01-24 |
CN100344789C (zh) | 2007-10-24 |
EP1395689A1 (de) | 2004-03-10 |
EP1395689B1 (de) | 2005-07-27 |
JP2004532931A (ja) | 2004-10-28 |
JP2006144124A (ja) | 2006-06-08 |
CN1827843A (zh) | 2006-09-06 |
DE60205251T2 (de) | 2006-05-24 |
EP1595971A1 (de) | 2005-11-16 |
JP3962690B2 (ja) | 2007-08-22 |
KR100668790B1 (ko) | 2007-01-16 |
HK1064130A1 (en) | 2005-01-21 |
CN1503854A (zh) | 2004-06-09 |
KR100682617B1 (ko) | 2007-02-15 |
KR20050110046A (ko) | 2005-11-22 |
US20020170821A1 (en) | 2002-11-21 |
US20040188249A1 (en) | 2004-09-30 |
WO2002083974A1 (en) | 2002-10-24 |
ATE300628T1 (de) | 2005-08-15 |
US7229588B2 (en) | 2007-06-12 |
US6797137B2 (en) | 2004-09-28 |
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