DE60201036D1 - Verfahren zum Herstellen von Verkleidungsschicht auf einem Top-leiter - Google Patents
Verfahren zum Herstellen von Verkleidungsschicht auf einem Top-leiterInfo
- Publication number
- DE60201036D1 DE60201036D1 DE60201036T DE60201036T DE60201036D1 DE 60201036 D1 DE60201036 D1 DE 60201036D1 DE 60201036 T DE60201036 T DE 60201036T DE 60201036 T DE60201036 T DE 60201036T DE 60201036 D1 DE60201036 D1 DE 60201036D1
- Authority
- DE
- Germany
- Prior art keywords
- cladding layer
- top ladder
- producing cladding
- producing
- ladder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US802650 | 2001-03-09 | ||
US09/802,650 US6475812B2 (en) | 2001-03-09 | 2001-03-09 | Method for fabricating cladding layer in top conductor |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60201036D1 true DE60201036D1 (de) | 2004-09-30 |
DE60201036T2 DE60201036T2 (de) | 2005-08-11 |
Family
ID=25184320
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60201036T Expired - Fee Related DE60201036T2 (de) | 2001-03-09 | 2002-03-08 | Verfahren zum Herstellen von Verkleidungsschicht auf einem Top-leiter |
Country Status (8)
Country | Link |
---|---|
US (1) | US6475812B2 (de) |
EP (1) | EP1239489B1 (de) |
JP (1) | JP2002334973A (de) |
KR (1) | KR100855573B1 (de) |
CN (1) | CN1374691A (de) |
DE (1) | DE60201036T2 (de) |
HK (1) | HK1049067A1 (de) |
TW (1) | TW513803B (de) |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10043947A1 (de) * | 2000-09-06 | 2002-04-04 | Infineon Technologies Ag | Integrierte Schaltungsanordnung |
US6555858B1 (en) * | 2000-11-15 | 2003-04-29 | Motorola, Inc. | Self-aligned magnetic clad write line and its method of formation |
US6413788B1 (en) * | 2001-02-28 | 2002-07-02 | Micron Technology, Inc. | Keepers for MRAM electrodes |
US6720597B2 (en) * | 2001-11-13 | 2004-04-13 | Motorola, Inc. | Cladding of a conductive interconnect for programming a MRAM device using multiple magnetic layers |
US6661688B2 (en) * | 2001-12-05 | 2003-12-09 | Hewlett-Packard Development Company, L.P. | Method and article for concentrating fields at sense layers |
US6525957B1 (en) * | 2001-12-21 | 2003-02-25 | Motorola, Inc. | Magnetic memory cell having magnetic flux wrapping around a bit line and method of manufacturing thereof |
US6780653B2 (en) | 2002-06-06 | 2004-08-24 | Micron Technology, Inc. | Methods of forming magnetoresistive memory device assemblies |
JP2006134363A (ja) * | 2002-07-29 | 2006-05-25 | Nec Corp | 磁気ランダムアクセスメモリ |
US6770491B2 (en) * | 2002-08-07 | 2004-08-03 | Micron Technology, Inc. | Magnetoresistive memory and method of manufacturing the same |
US6914805B2 (en) * | 2002-08-21 | 2005-07-05 | Micron Technology, Inc. | Method for building a magnetic keeper or flux concentrator used for writing magnetic bits on a MRAM device |
KR100515053B1 (ko) * | 2002-10-02 | 2005-09-14 | 삼성전자주식회사 | 비트라인 클램핑 전압 레벨에 대해 안정적인 독출 동작이가능한 마그네틱 메모리 장치 |
JP3906145B2 (ja) * | 2002-11-22 | 2007-04-18 | 株式会社東芝 | 磁気ランダムアクセスメモリ |
US6885074B2 (en) * | 2002-11-27 | 2005-04-26 | Freescale Semiconductor, Inc. | Cladded conductor for use in a magnetoelectronics device and method for fabricating the same |
US7184301B2 (en) | 2002-11-27 | 2007-02-27 | Nec Corporation | Magnetic memory cell and magnetic random access memory using the same |
US6909630B2 (en) | 2002-12-09 | 2005-06-21 | Applied Spintronics Technology, Inc. | MRAM memories utilizing magnetic write lines |
US6909633B2 (en) | 2002-12-09 | 2005-06-21 | Applied Spintronics Technology, Inc. | MRAM architecture with a flux closed data storage layer |
US6870759B2 (en) * | 2002-12-09 | 2005-03-22 | Applied Spintronics Technology, Inc. | MRAM array with segmented magnetic write lines |
US6943038B2 (en) * | 2002-12-19 | 2005-09-13 | Freescale Semiconductor, Inc. | Method for fabricating a flux concentrating system for use in a magnetoelectronics device |
US6812538B2 (en) | 2003-02-05 | 2004-11-02 | Applied Spintronics Technology, Inc. | MRAM cells having magnetic write lines with a stable magnetic state at the end regions |
US6864551B2 (en) * | 2003-02-05 | 2005-03-08 | Applied Spintronics Technology, Inc. | High density and high programming efficiency MRAM design |
US6940749B2 (en) | 2003-02-24 | 2005-09-06 | Applied Spintronics Technology, Inc. | MRAM array with segmented word and bit lines |
US6963500B2 (en) * | 2003-03-14 | 2005-11-08 | Applied Spintronics Technology, Inc. | Magnetic tunneling junction cell array with shared reference layer for MRAM applications |
US6933550B2 (en) * | 2003-03-31 | 2005-08-23 | Applied Spintronics Technology, Inc. | Method and system for providing a magnetic memory having a wrapped write line |
US7067866B2 (en) * | 2003-03-31 | 2006-06-27 | Applied Spintronics Technology, Inc. | MRAM architecture and a method and system for fabricating MRAM memories utilizing the architecture |
US6785160B1 (en) * | 2003-04-29 | 2004-08-31 | Hewlett-Packard Development Company, L.P. | Method of providing stability of a magnetic memory cell |
US7078239B2 (en) | 2003-09-05 | 2006-07-18 | Micron Technology, Inc. | Integrated circuit structure formed by damascene process |
US6819586B1 (en) * | 2003-10-24 | 2004-11-16 | Hewlett-Packard Development Company, L.P. | Thermally-assisted magnetic memory structures |
US20050141148A1 (en) | 2003-12-02 | 2005-06-30 | Kabushiki Kaisha Toshiba | Magnetic memory |
US20050205952A1 (en) * | 2004-03-19 | 2005-09-22 | Jae-Hyun Park | Magnetic random access memory cells having split sub-digit lines having cladding layers thereon and methods of fabricating the same |
US6946698B1 (en) | 2004-04-02 | 2005-09-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | MRAM device having low-k inter-metal dielectric |
US20060039183A1 (en) * | 2004-05-21 | 2006-02-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multi-sensing level MRAM structures |
WO2005122259A1 (ja) * | 2004-06-10 | 2005-12-22 | Nec Corporation | 磁気メモリ |
US7221584B2 (en) * | 2004-08-13 | 2007-05-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | MRAM cell having shared configuration |
US20130082232A1 (en) | 2011-09-30 | 2013-04-04 | Unity Semiconductor Corporation | Multi Layered Conductive Metal Oxide Structures And Methods For Facilitating Enhanced Performance Characteristics Of Two Terminal Memory Cells |
US7407885B2 (en) * | 2005-05-11 | 2008-08-05 | Micron Technology, Inc. | Methods of forming electrically conductive plugs |
KR100682950B1 (ko) * | 2005-07-28 | 2007-02-15 | 삼성전자주식회사 | 강유전체 기록매체 및 그 제조 방법 |
US7738287B2 (en) * | 2007-03-27 | 2010-06-15 | Grandis, Inc. | Method and system for providing field biased magnetic memory devices |
JP2009283843A (ja) * | 2008-05-26 | 2009-12-03 | Renesas Technology Corp | 半導体装置及びその製造方法 |
US7833806B2 (en) | 2009-01-30 | 2010-11-16 | Everspin Technologies, Inc. | Structure and method for fabricating cladded conductive lines in magnetic memories |
KR101983137B1 (ko) * | 2013-03-04 | 2019-05-28 | 삼성전기주식회사 | 파워 인덕터 및 그 제조방법 |
US10403424B2 (en) | 2017-06-09 | 2019-09-03 | Texas Instruments Incorporated | Method to form magnetic core for integrated magnetic devices |
CN112133820A (zh) * | 2019-06-25 | 2020-12-25 | 中电海康集团有限公司 | Mram底电极的制备方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2728025B2 (ja) | 1995-04-13 | 1998-03-18 | 日本電気株式会社 | 半導体装置の製造方法 |
DE59510349D1 (de) * | 1995-04-24 | 2002-10-02 | Infineon Technologies Ag | Halbleiter-Speichervorrichtung unter Verwendung eines ferroelektrischen Dielektrikums und Verfahren zur Herstellung |
JPH09191084A (ja) * | 1996-01-10 | 1997-07-22 | Nec Corp | 半導体装置及びその製造方法 |
US5732016A (en) * | 1996-07-02 | 1998-03-24 | Motorola | Memory cell structure in a magnetic random access memory and a method for fabricating thereof |
US6030877A (en) * | 1997-10-06 | 2000-02-29 | Industrial Technology Research Institute | Electroless gold plating method for forming inductor structures |
US5956267A (en) | 1997-12-18 | 1999-09-21 | Honeywell Inc | Self-aligned wordline keeper and method of manufacture therefor |
US6278165B1 (en) * | 1998-06-29 | 2001-08-21 | Kabushiki Kaisha Toshiba | MIS transistor having a large driving current and method for producing the same |
US5940319A (en) * | 1998-08-31 | 1999-08-17 | Motorola, Inc. | Magnetic random access memory and fabricating method thereof |
JP2000090658A (ja) * | 1998-09-09 | 2000-03-31 | Sanyo Electric Co Ltd | 磁気メモリ素子 |
US6872993B1 (en) * | 1999-05-25 | 2005-03-29 | Micron Technology, Inc. | Thin film memory device having local and external magnetic shielding |
DE10106860A1 (de) * | 2000-02-17 | 2001-08-30 | Sharp Kk | MTJ-Element und Magnetspeicher unter Verwendung eines solchen |
JP2001230468A (ja) * | 2000-02-17 | 2001-08-24 | Sharp Corp | 磁気トンネル接合素子及びそれを用いた磁気メモリ |
US6211090B1 (en) * | 2000-03-21 | 2001-04-03 | Motorola, Inc. | Method of fabricating flux concentrating layer for use with magnetoresistive random access memories |
TW459374B (en) * | 2000-08-30 | 2001-10-11 | Mosel Vitelic Inc | Method for forming magnetic layer of magnetic random access memory |
US6555858B1 (en) * | 2000-11-15 | 2003-04-29 | Motorola, Inc. | Self-aligned magnetic clad write line and its method of formation |
US6413788B1 (en) * | 2001-02-28 | 2002-07-02 | Micron Technology, Inc. | Keepers for MRAM electrodes |
-
2001
- 2001-03-09 US US09/802,650 patent/US6475812B2/en not_active Expired - Lifetime
- 2001-10-18 TW TW090125807A patent/TW513803B/zh not_active IP Right Cessation
- 2001-12-10 CN CN01143132A patent/CN1374691A/zh active Pending
-
2002
- 2002-03-06 JP JP2002060538A patent/JP2002334973A/ja active Pending
- 2002-03-08 DE DE60201036T patent/DE60201036T2/de not_active Expired - Fee Related
- 2002-03-08 KR KR1020020012376A patent/KR100855573B1/ko active IP Right Grant
- 2002-03-08 EP EP02251667A patent/EP1239489B1/de not_active Expired - Lifetime
-
2003
- 2003-02-18 HK HK03101239.6A patent/HK1049067A1/zh unknown
Also Published As
Publication number | Publication date |
---|---|
EP1239489A1 (de) | 2002-09-11 |
KR100855573B1 (ko) | 2008-09-03 |
EP1239489B1 (de) | 2004-08-25 |
CN1374691A (zh) | 2002-10-16 |
US6475812B2 (en) | 2002-11-05 |
HK1049067A1 (zh) | 2003-04-25 |
US20020127743A1 (en) | 2002-09-12 |
KR20030009078A (ko) | 2003-01-29 |
TW513803B (en) | 2002-12-11 |
JP2002334973A (ja) | 2002-11-22 |
DE60201036T2 (de) | 2005-08-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8327 | Change in the person/name/address of the patent owner |
Owner name: HEWLETT-PACKARD DEVELOPMENT CO., L.P., HOUSTON, TE |
|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: SAMSUNG ELECTRONICS CO., LTD., SUWON, GYEONGGI, KR |