DE60200970D1 - Positiv arbeitende lichtempfindliche Zusammensetzung - Google Patents
Positiv arbeitende lichtempfindliche ZusammensetzungInfo
- Publication number
- DE60200970D1 DE60200970D1 DE60200970T DE60200970T DE60200970D1 DE 60200970 D1 DE60200970 D1 DE 60200970D1 DE 60200970 T DE60200970 T DE 60200970T DE 60200970 T DE60200970 T DE 60200970T DE 60200970 D1 DE60200970 D1 DE 60200970D1
- Authority
- DE
- Germany
- Prior art keywords
- photosensitive composition
- positive working
- working photosensitive
- positive
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/111—Polymer of unsaturated acid or ester
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/122—Sulfur compound containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/122—Sulfur compound containing
- Y10S430/123—Sulfur in heterocyclic ring
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001152587A JP4149141B2 (ja) | 2001-05-22 | 2001-05-22 | ポジ型感光性組成物 |
JP2001152587 | 2001-05-22 | ||
JP2001155897A JP2002351079A (ja) | 2001-05-24 | 2001-05-24 | ポジ型レジスト組成物 |
JP2001155897 | 2001-05-24 | ||
JP2001159060A JP2002351063A (ja) | 2001-05-28 | 2001-05-28 | ポジ型感光性組成物 |
JP2001159060 | 2001-05-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60200970D1 true DE60200970D1 (de) | 2004-09-23 |
DE60200970T2 DE60200970T2 (de) | 2005-09-29 |
Family
ID=27346764
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60200970T Expired - Lifetime DE60200970T2 (de) | 2001-05-22 | 2002-05-22 | Positiv arbeitende lichtempfindliche Zusammensetzung |
Country Status (5)
Country | Link |
---|---|
US (1) | US6927009B2 (de) |
EP (1) | EP1260864B1 (de) |
KR (1) | KR100873868B1 (de) |
DE (1) | DE60200970T2 (de) |
TW (1) | TWI298112B (de) |
Families Citing this family (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW573222B (en) * | 2001-02-14 | 2004-01-21 | Shinetsu Chemical Co | Polymer, resist composition and patterning process |
EP1267210B1 (de) * | 2001-06-12 | 2018-02-21 | FUJIFILM Corporation | Positivresistzusammensetzung |
US7192681B2 (en) * | 2001-07-05 | 2007-03-20 | Fuji Photo Film Co., Ltd. | Positive photosensitive composition |
EP1308781A3 (de) * | 2001-10-05 | 2003-09-03 | Shipley Co. L.L.C. | Cyclische sulfonium und sulfoxonium Fotosäure erzeugende Verbindungen und diese Verbindungen enthaltende Fotoresiste |
US7510822B2 (en) * | 2002-04-10 | 2009-03-31 | Fujifilm Corporation | Stimulation sensitive composition and compound |
DE10243742B4 (de) * | 2002-09-20 | 2007-11-08 | Qimonda Ag | Verfahren zur Strukturierung von Halbleitersubstraten unter Verwendung eines Fotoresists |
JP4253486B2 (ja) * | 2002-09-25 | 2009-04-15 | 富士フイルム株式会社 | ポジ型又はネガ型レジスト組成物、酸発生剤及びパターン形成方法 |
US7087356B2 (en) * | 2002-09-30 | 2006-08-08 | International Business Machines Corporation | 193nm resist with improved post-exposure properties |
US7501230B2 (en) * | 2002-11-04 | 2009-03-10 | Meagley Robert P | Photoactive adhesion promoter |
JP4357830B2 (ja) * | 2002-12-02 | 2009-11-04 | 東京応化工業株式会社 | レジスト用(メタ)アクリル酸誘導体ポリマーの製造方法 |
JP4278966B2 (ja) | 2002-12-02 | 2009-06-17 | 東京応化工業株式会社 | レジストパターン形成方法、ポジ型レジスト組成物及び積層体 |
US7005230B2 (en) * | 2003-01-16 | 2006-02-28 | Jsr Corporation | Radiation-sensitive resin composition |
JP4083053B2 (ja) * | 2003-03-31 | 2008-04-30 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
US7358408B2 (en) * | 2003-05-16 | 2008-04-15 | Az Electronic Materials Usa Corp. | Photoactive compounds |
US7241551B2 (en) * | 2003-06-09 | 2007-07-10 | Fujifilm Corporation | Positive-working resist composition |
US7488565B2 (en) * | 2003-10-01 | 2009-02-10 | Chevron U.S.A. Inc. | Photoresist compositions comprising diamondoid derivatives |
JP4347110B2 (ja) | 2003-10-22 | 2009-10-21 | 東京応化工業株式会社 | 電子線又はeuv用ポジ型レジスト組成物 |
JP4924795B2 (ja) * | 2003-12-18 | 2012-04-25 | 東邦化学工業株式会社 | ノルボルナンラクトン系(メタ)アクリレートおよびその重合体 |
JP4308051B2 (ja) * | 2004-03-22 | 2009-08-05 | 富士フイルム株式会社 | 感光性組成物及びそれを用いたパターン形成方法 |
US7147986B2 (en) * | 2004-03-31 | 2006-12-12 | Intel Corporation | Resist compounds including acid labile groups attached to polymeric chains at anhydride linkages |
WO2005108444A1 (ja) * | 2004-05-06 | 2005-11-17 | Jsr Corporation | ラクトン系共重合体および感放射線性樹脂組成物 |
JP4841823B2 (ja) * | 2004-10-04 | 2011-12-21 | 東京応化工業株式会社 | 高分子化合物、ポジ型レジスト組成物およびレジストパターン形成方法 |
JP4562537B2 (ja) * | 2005-01-28 | 2010-10-13 | 富士フイルム株式会社 | 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法 |
JP4579019B2 (ja) * | 2005-03-17 | 2010-11-10 | 富士フイルム株式会社 | ポジ型レジスト組成物及び該レジスト組成物を用いたパターン形成方法 |
JP2007101715A (ja) * | 2005-09-30 | 2007-04-19 | Fujifilm Corp | パターン形成方法及びそれに用いるレジスト組成物 |
WO2007112088A2 (en) * | 2006-03-24 | 2007-10-04 | Qd Vision, Inc. | Hyperspectral imaging device |
US8549762B2 (en) * | 2007-02-13 | 2013-10-08 | Robert Bosch Gmbh | Linkage drive mechanism for a reciprocating tool |
US20100216981A1 (en) * | 2007-03-23 | 2010-08-26 | Nippon Soda Co., Ltd. | Antiviral agent |
US8029972B2 (en) * | 2007-10-11 | 2011-10-04 | Tokyo Ohka Kogyo Co., Ltd. | Resist composition and method of forming resist pattern |
JP5489417B2 (ja) * | 2008-04-23 | 2014-05-14 | 東京応化工業株式会社 | ポジ型レジスト組成物およびレジストパターン形成方法 |
EP2189844A3 (de) * | 2008-11-19 | 2010-07-28 | Rohm and Haas Electronic Materials LLC | Zusammensetzungen, die Sulfonamid-Material beinhalten, und Verfahren für die Fotolithografie |
JP5523854B2 (ja) * | 2009-02-06 | 2014-06-18 | 住友化学株式会社 | 化学増幅型フォトレジスト組成物及びパターン形成方法 |
JP5557550B2 (ja) | 2009-02-20 | 2014-07-23 | 富士フイルム株式会社 | 電子線又はeuv光を用いた有機溶剤系現像又は多重現像パターン形成方法 |
KR20100117025A (ko) * | 2009-04-23 | 2010-11-02 | 스미또모 가가꾸 가부시키가이샤 | 포토레지스트 패턴 형성 방법 |
JP5212245B2 (ja) * | 2009-04-23 | 2013-06-19 | 住友化学株式会社 | レジストパターンの製造方法 |
EP2478414B1 (de) * | 2009-09-16 | 2014-12-31 | FUJIFILM Corporation | Gegenüber aktinischer strahlung empfindliche harzzusammensetzung und strukturbildungsverfahren damit |
WO2012036250A1 (ja) * | 2010-09-17 | 2012-03-22 | Jsr株式会社 | 感放射線性樹脂組成物、重合体及びレジストパターン形成方法 |
UA113500C2 (xx) | 2010-10-29 | 2017-02-10 | Одержані екструзією розплаву тверді дисперсії, що містять індукуючий апоптоз засіб | |
JP5677127B2 (ja) * | 2011-02-18 | 2015-02-25 | 東京応化工業株式会社 | レジスト組成物、レジストパターン形成方法 |
JP5775856B2 (ja) * | 2011-11-07 | 2015-09-09 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、並びにそれを用いた感活性光線性又は感放射線性膜及びパターン形成方法 |
TWI603983B (zh) * | 2012-08-10 | 2017-11-01 | Nippon Shokubai Co Ltd | Hardening resin composition and its use |
JP5997982B2 (ja) * | 2012-08-31 | 2016-09-28 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、該組成物を用いたレジスト膜、パターン形成方法、及び電子デバイスの製造方法 |
JP6167016B2 (ja) | 2013-10-31 | 2017-07-19 | 富士フイルム株式会社 | 積層体、有機半導体製造用キットおよび有機半導体製造用レジスト組成物 |
US10088749B2 (en) | 2016-09-30 | 2018-10-02 | Rohm And Haas Electronic Materials Llc | Photoacid-generating compound and associated polymer, photoresist composition, and method of forming a photoresist relief image |
CN112485965B (zh) * | 2020-11-27 | 2023-02-03 | 上海新阳半导体材料股份有限公司 | 一种厚膜型KrF光刻胶组合物,其制备方法及应用 |
CN112485960B (zh) * | 2020-11-27 | 2023-02-03 | 上海新阳半导体材料股份有限公司 | 厚膜型光刻胶组合物及其制备方法和应用 |
CN112346301B (zh) * | 2020-11-27 | 2023-02-03 | 上海新阳半导体材料股份有限公司 | Duv厚膜光刻胶树脂及其制备方法和涂覆基材 |
CN112485964B (zh) * | 2020-11-27 | 2023-02-03 | 上海新阳半导体材料股份有限公司 | 一种厚膜型248nm光刻胶组合物,其制备方法和涂覆基材 |
CN112485961B (zh) * | 2020-11-27 | 2022-10-21 | 上海新阳半导体材料股份有限公司 | 厚膜型duv光刻胶组合物及其制备方法和应用 |
CN112485962B (zh) * | 2020-11-27 | 2022-10-21 | 上海新阳半导体材料股份有限公司 | KrF厚膜型光刻胶组合物、其制备方法和涂覆基材 |
CN112346300B (zh) * | 2020-11-27 | 2022-10-18 | 上海新阳半导体材料股份有限公司 | KrF厚膜光刻胶树脂、其制备方法和涂覆基材 |
CN112485966B (zh) * | 2020-11-27 | 2022-10-18 | 上海新阳半导体材料股份有限公司 | 一种248nm厚膜光刻胶树脂及其制备方法和应用 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR960015081A (ko) * | 1993-07-15 | 1996-05-22 | 마쯔모또 에이이찌 | 화학증폭형 레지스트 조성물 |
WO1997008141A1 (fr) | 1995-08-22 | 1997-03-06 | Nippon Soda Co., Ltd. | Nouveaux composes a base de sel de sulfonium, initiateur de polymerisation, composition solidifiable et procede de durcissement |
EP0803775B1 (de) * | 1996-04-25 | 2002-08-07 | Fuji Photo Film Co., Ltd. | Positiv-arbeitende lichtempfindliche Zusammensetzung |
JP3679205B2 (ja) * | 1996-09-20 | 2005-08-03 | 富士写真フイルム株式会社 | ポジ型感光性組成物 |
JP3067689B2 (ja) | 1997-04-24 | 2000-07-17 | パロマ工業株式会社 | 湯沸器 |
US6054254A (en) | 1997-07-03 | 2000-04-25 | Kabushiki Kaisha Toshiba | Composition for underlying film and method of forming a pattern using the film |
US6159656A (en) * | 1998-06-26 | 2000-12-12 | Fuji Photo Film Co., Ltd. | Positive photosensitive resin |
JP3763239B2 (ja) | 1999-01-18 | 2006-04-05 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
US6292303B1 (en) | 1999-03-10 | 2001-09-18 | Hamar Laser Instruments, Inc. | Laser apparatus for simultaneously generating a plurality of laser planes from a single laser source |
DE60015220T2 (de) * | 1999-03-31 | 2006-02-02 | Sumitomo Chemical Co. Ltd. | Positiv arbeitender Resist vom chemischen Verstärkertyp |
JP4124907B2 (ja) | 1999-04-06 | 2008-07-23 | 東京応化工業株式会社 | ポジ型レジスト組成物 |
JP3444821B2 (ja) | 1999-10-06 | 2003-09-08 | 富士写真フイルム株式会社 | ポジ型フォトレジスト組成物 |
JP3567984B2 (ja) * | 1999-11-01 | 2004-09-22 | 日本電気株式会社 | スルホニウム塩化合物、フォトレジスト組成物、およびそれを用いたパターン形成方法 |
DE10054550A1 (de) * | 1999-11-01 | 2001-05-31 | Nec Corp | Sulfoniumsalz-Verbindung, Photoresist-Zusammensetzung und Verfahren zur Muster-/Strukturerzeugung unter Verwendung derselben |
JP4378872B2 (ja) | 2000-11-15 | 2009-12-09 | 日本電気株式会社 | 光酸発生剤、化学増幅レジスト組成物、およびそれを用いたパターン形成方法 |
-
2002
- 2002-05-21 US US10/150,967 patent/US6927009B2/en not_active Expired - Fee Related
- 2002-05-22 DE DE60200970T patent/DE60200970T2/de not_active Expired - Lifetime
- 2002-05-22 KR KR1020020028374A patent/KR100873868B1/ko not_active IP Right Cessation
- 2002-05-22 EP EP02011516A patent/EP1260864B1/de not_active Expired - Lifetime
- 2002-05-22 TW TW091110713A patent/TWI298112B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TWI298112B (en) | 2008-06-21 |
EP1260864B1 (de) | 2004-08-18 |
DE60200970T2 (de) | 2005-09-29 |
KR100873868B1 (ko) | 2008-12-15 |
US6927009B2 (en) | 2005-08-09 |
US20030077540A1 (en) | 2003-04-24 |
EP1260864A1 (de) | 2002-11-27 |
KR20030006971A (ko) | 2003-01-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
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8327 | Change in the person/name/address of the patent owner |
Owner name: FUJIFILM CORP., TOKIO/TOKYO, JP |