DE602006001930D1 - tur von organischen Schichten - Google Patents
tur von organischen SchichtenInfo
- Publication number
- DE602006001930D1 DE602006001930D1 DE602006001930T DE602006001930T DE602006001930D1 DE 602006001930 D1 DE602006001930 D1 DE 602006001930D1 DE 602006001930 T DE602006001930 T DE 602006001930T DE 602006001930 T DE602006001930 T DE 602006001930T DE 602006001930 D1 DE602006001930 D1 DE 602006001930D1
- Authority
- DE
- Germany
- Prior art keywords
- organic layers
- layers
- organic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/155—Hole transporting layers comprising dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
- H10K50/165—Electron transporting layers comprising dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/19—Tandem OLEDs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/30—Doping active layers, e.g. electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
- H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
- H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP05028308 | 2005-12-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE602006001930D1 true DE602006001930D1 (de) | 2008-09-04 |
Family
ID=36121269
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE602006001930T Active DE602006001930D1 (de) | 2005-12-23 | 2006-01-20 | tur von organischen Schichten |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7830089B2 (de) |
| EP (1) | EP1804309B1 (de) |
| JP (1) | JP5583345B2 (de) |
| KR (1) | KR101460117B1 (de) |
| CN (1) | CN101375429B (de) |
| DE (1) | DE602006001930D1 (de) |
| TW (1) | TWI367586B (de) |
Families Citing this family (81)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI321968B (en) * | 2005-07-15 | 2010-03-11 | Lg Chemical Ltd | Organic light meitting device and method for manufacturing the same |
| WO2007052431A1 (ja) * | 2005-10-31 | 2007-05-10 | Konica Minolta Holdings, Inc. | 有機エレクトロルミネッセンス素子、表示装置及び照明装置 |
| KR100845694B1 (ko) * | 2006-01-18 | 2008-07-11 | 주식회사 엘지화학 | 적층형 유기발광소자 |
| WO2008042859A2 (en) | 2006-09-29 | 2008-04-10 | University Of Florida Research Foundation, Inc. | Method and apparatus for infrared detection and display |
| KR20100017887A (ko) | 2007-05-21 | 2010-02-16 | 오스람 옵토 세미컨덕터스 게엠베하 | 인광성 금속 착화합물, 인광성 금속 착화합물을 포함하는 복사 방출 소자 및 인광성 금속 착화합물의 제조 방법 |
| WO2009039845A1 (de) | 2007-09-28 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Organisches strahlungsemittierendes bauteil |
| EP2068380B1 (de) * | 2007-10-15 | 2011-08-17 | Novaled AG | Organisches elektrolumineszentes Bauelement |
| JP2011521414A (ja) * | 2008-05-16 | 2011-07-21 | エルジー・ケム・リミテッド | 積層型有機発光素子 |
| JP2010041022A (ja) * | 2008-07-08 | 2010-02-18 | Sumitomo Chemical Co Ltd | 光電変換素子 |
| KR101332794B1 (ko) * | 2008-08-05 | 2013-11-25 | 삼성전자주식회사 | 발광 장치, 이를 포함하는 발광 시스템, 상기 발광 장치 및발광 시스템의 제조 방법 |
| DE102008058230B4 (de) | 2008-11-19 | 2021-01-07 | Novaled Gmbh | Chinoxalinverbindung, organische Leuchtdiode, organischer Dünnfilmtransistor und Solarzelle |
| KR101715219B1 (ko) | 2008-11-19 | 2017-03-10 | 노발레드 게엠베하 | 퀴녹살린 화합물 및 반도체 재료 |
| EP2194055B1 (de) | 2008-12-03 | 2012-04-04 | Novaled AG | Verbrückte Pyridochinazolin- oder Phenathronlin-Verbindungen und organisches Halbleitermaterial mit dieser Verbindung |
| DE102008061843B4 (de) | 2008-12-15 | 2018-01-18 | Novaled Gmbh | Heterocyclische Verbindungen und deren Verwendung in elektronischen und optoelektronischen Bauelementen |
| DE102009016957A1 (de) | 2009-04-14 | 2010-12-16 | Technische Universität Dresden | Organisches elektrolumineszentes Bauelement |
| EP2246862A1 (de) | 2009-04-27 | 2010-11-03 | Novaled AG | Organische elektronische Vorrichtung mit einem organischen Halbleitermaterial |
| EP2267818B1 (de) | 2009-06-22 | 2017-03-22 | Novaled GmbH | Organische Beleuchtungsvorrichtung |
| DE102010023619B4 (de) | 2009-08-05 | 2016-09-15 | Novaled Ag | Organisches bottom-emittierendes Bauelement |
| US20110248244A1 (en) * | 2009-10-05 | 2011-10-13 | Emagin Corporation | Independently controlled stacked inverted organic light emitting diodes and a method of manufacturing same |
| EP2312663B1 (de) | 2009-10-19 | 2014-10-15 | Novaled AG | Organische elektronische Vorrichtung mit einem organischen Halbleitermaterial |
| BR112012012249A2 (pt) | 2009-11-24 | 2016-04-19 | Univ Florida | método e aparelho para percepção de radiação infravermelha |
| KR101822072B1 (ko) | 2009-11-24 | 2018-01-25 | 노발레드 게엠베하 | 유기 반도전성 물질을 포함하는 유기 전자 디바이스 |
| ES2642386T3 (es) | 2009-12-18 | 2017-11-16 | Arcelormittal | Dispositivo electroluminiscente de gran superficie comprendiendo diodos electroluminiscentes orgánicos |
| US8415620B2 (en) * | 2010-01-11 | 2013-04-09 | International Business Machines Corporation | Determining doping type and level in semiconducting nanostructures |
| DE102010004453A1 (de) * | 2010-01-12 | 2011-07-14 | Novaled AG, 01307 | Organisches lichtemittierendes Bauelement |
| US8933439B2 (en) * | 2010-02-05 | 2015-01-13 | Nitto Denko Corporation | Organic light-emitting diode with enhanced efficiency |
| EP2381502B1 (de) | 2010-04-23 | 2013-08-14 | Novaled AG | Organische Halbleiterschicht |
| CA2800549A1 (en) | 2010-05-24 | 2011-12-01 | University Of Florida Research Foundation, Inc. | Method and apparatus for providing a charge blocking layer on an infrared up-conversion device |
| EP2395571B1 (de) | 2010-06-10 | 2013-12-04 | Novaled AG | Eine organische Vorrichtung umfassend ein organisches halbleitendes Material |
| CN102971883B (zh) | 2010-06-14 | 2016-01-20 | 诺瓦莱德公开股份有限公司 | 有机发光器件 |
| DE102010023620B4 (de) | 2010-06-14 | 2016-09-15 | Novaled Ag | Organisches, bottom-emittierendes Bauelement |
| US8637858B2 (en) | 2010-09-24 | 2014-01-28 | Novaled Ag | Tandem white OLED |
| KR20120041460A (ko) * | 2010-10-21 | 2012-05-02 | 엘지디스플레이 주식회사 | 유기전계발광소자 |
| EP2452946B1 (de) | 2010-11-16 | 2014-05-07 | Novaled AG | Pyridylphosphinoxide für eine organische elektronische Vorrichtung und organische elektronische Vorrichtung |
| DE102010061013B4 (de) | 2010-12-03 | 2019-03-21 | Novaled Gmbh | Organisches elektro-optisches Bauelement |
| EP2463927B1 (de) | 2010-12-08 | 2013-08-21 | Novaled AG | Material für eine organische elektronische Vorrichtung und organische elektronische Vorrichtung |
| DE102011013897A1 (de) | 2011-03-11 | 2012-09-13 | Technische Universität Dresden | Organische Solarzelle |
| JP6502093B2 (ja) | 2011-06-30 | 2019-04-17 | ユニバーシティ オブ フロリダ リサーチ ファンデーション インコーポレーティッド | 利得を伴って赤外線放射を検出する方法および装置 |
| CN102360999A (zh) * | 2011-11-08 | 2012-02-22 | 福州大学 | 柔性可控有机pn结场发射电子源 |
| DE102011055233A1 (de) | 2011-11-10 | 2013-05-16 | Novaled Ag | Lichtemittierende Vorrichtung und flächige Anordnung mit mehreren lichtemittierenden Vorrichtungen |
| JP6170501B2 (ja) | 2011-11-30 | 2017-07-26 | ノヴァレッド ゲーエムベーハー | ディスプレイ |
| JP6139552B2 (ja) | 2011-12-06 | 2017-05-31 | ノヴァレッド ゲーエムベーハー | 有機発光素子およびその製造方法 |
| JP6251670B2 (ja) * | 2012-03-29 | 2017-12-20 | 株式会社Ｊｏｌｅｄ | 有機エレクトロルミネッセンス素子 |
| KR102156221B1 (ko) | 2012-04-02 | 2020-09-15 | 노발레드 게엠베하 | 유기 발광 소자에서의 반도체 화합물의 용도 |
| US9379347B2 (en) | 2012-08-27 | 2016-06-28 | Konica Minolta, Inc. | Organic electroluminescence element |
| EP2790236B1 (de) | 2013-04-10 | 2017-09-20 | Novaled GmbH | Halbleitermaterial mit azasubstituierter Phosphinoxidmatrix und Metallsalz |
| CN104183761A (zh) * | 2013-05-22 | 2014-12-03 | 海洋王照明科技股份有限公司 | 倒置有机电致发光器件及其制备方法 |
| US9564592B2 (en) * | 2013-05-30 | 2017-02-07 | Konica Minolta, Inc. | Organic electroluminescent element, method for manufacturing organic electroluminescent element, and organic electroluminescent module |
| CN104253230A (zh) * | 2013-06-26 | 2014-12-31 | 海洋王照明科技股份有限公司 | 有机电致发光器件及其制备方法 |
| EP2840622B1 (de) | 2013-08-19 | 2019-02-13 | Novaled GmbH | Elektronische oder optoelektronische Vorrichtung mit einer verankerten dünnen Molekularschicht, Verfahren zu deren Herstellung und darin verwendete Verbindung |
| EP2860782B1 (de) | 2013-10-09 | 2019-04-17 | Novaled GmbH | Halbleitermaterial, umfassend eine Phosphinoxidmatrix und Metallsalz |
| EP2887412B1 (de) | 2013-12-23 | 2016-07-27 | Novaled GmbH | Halbleitermaterial |
| EP2887416B1 (de) | 2013-12-23 | 2018-02-21 | Novaled GmbH | N-dotiertes Halbleitermaterial mit Phosphinoxidmatrix und Metalldotiermittel |
| US9209422B2 (en) * | 2013-12-31 | 2015-12-08 | Lg Display Co., Ltd. | Organic light emitting display device with micro-cavity structure |
| EP2963697B1 (de) | 2014-06-30 | 2020-09-23 | Novaled GmbH | Elektrisch dotiertes organisches Halbleitermaterial und organische lichtemittierende Vorrichtung damit |
| CN104393185B (zh) * | 2014-11-25 | 2017-05-24 | 京东方科技集团股份有限公司 | 一种叠层有机电致发光器件及其制作方法 |
| US10243166B2 (en) * | 2015-02-17 | 2019-03-26 | Pioneer Corporation | Light-emitting device with stacked layers |
| EP3059776B1 (de) | 2015-02-18 | 2021-03-31 | Novaled GmbH | Halbleitermaterial und Naphtofuranverbindungsmatrix |
| EP3079179A1 (de) | 2015-04-08 | 2016-10-12 | Novaled GmbH | Halbleitermaterial mit einer phosphinoxidmatrix und metallsalz |
| WO2017039774A2 (en) | 2015-06-11 | 2017-03-09 | University Of Florida Research Foundation, Incorporated | Monodisperse, ir-absorbing nanoparticles and related methods and devices |
| EP3109915B1 (de) | 2015-06-23 | 2021-07-21 | Novaled GmbH | Organische lichtemittierende vorrichtung mit polarer matrix und metalldotiermittel |
| DE102015110091B4 (de) | 2015-06-23 | 2019-06-06 | Novaled Gmbh | Phosphepinmatrixverbindung für ein Halbleitermaterial |
| EP3109916B1 (de) | 2015-06-23 | 2021-08-25 | Novaled GmbH | Organische lichtemittierende vorrichtung mit polarer matrix, metalldotierstoff und silber-kathode |
| EP3109919B1 (de) | 2015-06-23 | 2021-06-23 | Novaled GmbH | N-dotiertes halbleitermaterial mit polarer matrix und einem metalldotiermittel |
| JP2018524812A (ja) | 2015-06-23 | 2018-08-30 | ノヴァレッド ゲーエムベーハー | 極性マトリクスおよび金属ドーパント含んでいる、ｎ型ドープ半導体材料 |
| CN105161627B (zh) * | 2015-06-29 | 2016-08-17 | 京东方科技集团股份有限公司 | 一种串联式有机发光二极管、阵列基板及显示装置 |
| CN105161628B (zh) * | 2015-06-29 | 2017-02-15 | 京东方科技集团股份有限公司 | 一种串联式有机发光二极管、阵列基板及显示装置 |
| CN108431289B (zh) | 2015-11-10 | 2021-01-12 | 诺瓦尔德股份有限公司 | 用于制备含金属层的方法 |
| EP3168886B8 (de) | 2015-11-10 | 2023-07-26 | Novaled GmbH | Metallschicht mit alkalimetall und zweitem metall |
| EP3168324A1 (de) | 2015-11-10 | 2017-05-17 | Novaled GmbH | Verfahren zur herstellung einer metallhaltigen schicht |
| EP3168894B8 (de) | 2015-11-10 | 2023-07-26 | Novaled GmbH | N-dotiertes halbleitermaterial mit zwei metallischen dotierstoffen |
| KR102600474B1 (ko) | 2016-03-10 | 2023-11-13 | 삼성디스플레이 주식회사 | 유기 발광 소자 |
| KR102616579B1 (ko) * | 2016-04-08 | 2023-12-22 | 삼성디스플레이 주식회사 | 유기 발광 소자 |
| WO2017220660A1 (en) | 2016-06-22 | 2017-12-28 | Novaled Gmbh | Phosphepine matrix compound for a semiconducting material |
| KR102478039B1 (ko) * | 2017-02-20 | 2022-12-14 | 노발레드 게엠베하 | 전자 반도전성 소자, 전자 반도전성 소자를 제조하기 위한 방법, 및 화합물 |
| CN110311045B (zh) * | 2019-06-24 | 2021-02-26 | 武汉华星光电半导体显示技术有限公司 | 一种有机电致发光器件 |
| KR102641712B1 (ko) * | 2019-06-24 | 2024-02-27 | 덕산네오룩스 주식회사 | 유기전기소자 |
| CN110456247B (zh) * | 2019-07-29 | 2021-08-13 | 云谷（固安）科技有限公司 | 测试器件及其测试方法 |
| CN117567443A (zh) * | 2019-11-19 | 2024-02-20 | 德山新勒克斯有限公司 | 用于有机电子元件的化合物、使用所述化合物的有机电子元件及其电子装置 |
| WO2022056905A1 (zh) * | 2020-09-21 | 2022-03-24 | 京东方科技集团股份有限公司 | 发光器件及其制备方法、发光基板及其制备方法和发光装置 |
| CN114613927B (zh) * | 2022-05-11 | 2022-07-29 | 南京迪视泰光电科技有限公司 | 一种电荷产生层、电致发光器件及其制备方法 |
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-
2006
- 2006-01-20 DE DE602006001930T patent/DE602006001930D1/de active Active
- 2006-01-20 EP EP06001231A patent/EP1804309B1/de active Active
- 2006-12-21 TW TW095148294A patent/TWI367586B/zh not_active IP Right Cessation
- 2006-12-22 CN CN2006800528745A patent/CN101375429B/zh active Active
- 2006-12-22 KR KR1020087018120A patent/KR101460117B1/ko active IP Right Grant
- 2006-12-22 US US12/158,479 patent/US7830089B2/en active Active
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Also Published As
| Publication number | Publication date |
|---|---|
| KR20080087011A (ko) | 2008-09-29 |
| CN101375429B (zh) | 2011-02-23 |
| EP1804309B1 (de) | 2008-07-23 |
| TWI367586B (en) | 2012-07-01 |
| JP2009521110A (ja) | 2009-05-28 |
| TW200729582A (en) | 2007-08-01 |
| EP1804309A1 (de) | 2007-07-04 |
| KR101460117B1 (ko) | 2014-11-10 |
| US7830089B2 (en) | 2010-11-09 |
| CN101375429A (zh) | 2009-02-25 |
| JP5583345B2 (ja) | 2014-09-03 |
| US20090045728A1 (en) | 2009-02-19 |
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