DE602006001026D1 - Integriertes Schaltgerät, Flash-Speicherarray, nichtflüchtige Speichervorrichtung und Betriebsverfahren - Google Patents

Integriertes Schaltgerät, Flash-Speicherarray, nichtflüchtige Speichervorrichtung und Betriebsverfahren

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Publication number
DE602006001026D1
DE602006001026D1 DE602006001026T DE602006001026T DE602006001026D1 DE 602006001026 D1 DE602006001026 D1 DE 602006001026D1 DE 602006001026 T DE602006001026 T DE 602006001026T DE 602006001026 T DE602006001026 T DE 602006001026T DE 602006001026 D1 DE602006001026 D1 DE 602006001026D1
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DE
Germany
Prior art keywords
operating method
integrated switching
flash memory
switching device
nonvolatile memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006001026T
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English (en)
Other versions
DE602006001026T2 (de
Inventor
Sang Won Hwang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE602006001026D1 publication Critical patent/DE602006001026D1/de
Application granted granted Critical
Publication of DE602006001026T2 publication Critical patent/DE602006001026T2/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • A—HUMAN NECESSITIES
    • A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47G—HOUSEHOLD OR TABLE EQUIPMENT
    • A47G21/00—Table-ware
    • A47G21/10—Sugar tongs; Asparagus tongs; Other food tongs
    • A47G21/103—Chop-sticks
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5641—Multilevel memory having cells with different number of storage levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
DE602006001026T 2005-04-27 2006-03-08 Integriertes Schaltgerät, Flash-Speicherarray, nichtflüchtige Speichervorrichtung und Betriebsverfahren Active DE602006001026T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050034825A KR100666174B1 (ko) 2005-04-27 2005-04-27 3-레벨 불휘발성 반도체 메모리 장치 및 이에 대한구동방법
KR2005034825 2005-04-27

Publications (2)

Publication Number Publication Date
DE602006001026D1 true DE602006001026D1 (de) 2008-06-12
DE602006001026T2 DE602006001026T2 (de) 2009-06-25

Family

ID=36791826

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006001026T Active DE602006001026T2 (de) 2005-04-27 2006-03-08 Integriertes Schaltgerät, Flash-Speicherarray, nichtflüchtige Speichervorrichtung und Betriebsverfahren

Country Status (7)

Country Link
US (3) US7388778B2 (de)
EP (1) EP1720168B1 (de)
JP (1) JP4970834B2 (de)
KR (1) KR100666174B1 (de)
CN (2) CN1855304B (de)
DE (1) DE602006001026T2 (de)
TW (1) TWI310189B (de)

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US7388778B2 (en) 2008-06-17
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TWI310189B (en) 2009-05-21
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DE602006001026T2 (de) 2009-06-25
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US20080212372A1 (en) 2008-09-04
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JP4970834B2 (ja) 2012-07-11
CN101807432A (zh) 2010-08-18
CN1855304B (zh) 2010-06-16
US20060245249A1 (en) 2006-11-02
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