DE602005021010D1 - Kontrolle der Raumumgebung während des Trocknen von Wafern - Google Patents
Kontrolle der Raumumgebung während des Trocknen von WafernInfo
- Publication number
- DE602005021010D1 DE602005021010D1 DE602005021010T DE602005021010T DE602005021010D1 DE 602005021010 D1 DE602005021010 D1 DE 602005021010D1 DE 602005021010 T DE602005021010 T DE 602005021010T DE 602005021010 T DE602005021010 T DE 602005021010T DE 602005021010 D1 DE602005021010 D1 DE 602005021010D1
- Authority
- DE
- Germany
- Prior art keywords
- wafers
- drying
- control
- environment during
- room environment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/817,398 US7614411B2 (en) | 2002-09-30 | 2004-04-01 | Controls of ambient environment during wafer drying using proximity head |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602005021010D1 true DE602005021010D1 (de) | 2010-06-17 |
Family
ID=34887782
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602005021010T Active DE602005021010D1 (de) | 2004-04-01 | 2005-03-29 | Kontrolle der Raumumgebung während des Trocknen von Wafern |
Country Status (9)
Country | Link |
---|---|
US (1) | US7614411B2 (de) |
EP (1) | EP1583136B1 (de) |
JP (1) | JP4630103B2 (de) |
KR (1) | KR101147944B1 (de) |
CN (1) | CN100452308C (de) |
AT (1) | ATE467230T1 (de) |
DE (1) | DE602005021010D1 (de) |
MY (1) | MY143956A (de) |
SG (2) | SG136145A1 (de) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7234477B2 (en) * | 2000-06-30 | 2007-06-26 | Lam Research Corporation | Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces |
US7632376B1 (en) | 2002-09-30 | 2009-12-15 | Lam Research Corporation | Method and apparatus for atomic layer deposition (ALD) in a proximity system |
US7997288B2 (en) * | 2002-09-30 | 2011-08-16 | Lam Research Corporation | Single phase proximity head having a controlled meniscus for treating a substrate |
US7383843B2 (en) * | 2002-09-30 | 2008-06-10 | Lam Research Corporation | Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer |
US7389783B2 (en) * | 2002-09-30 | 2008-06-24 | Lam Research Corporation | Proximity meniscus manifold |
US7293571B2 (en) | 2002-09-30 | 2007-11-13 | Lam Research Corporation | Substrate proximity processing housing and insert for generating a fluid meniscus |
US8236382B2 (en) * | 2002-09-30 | 2012-08-07 | Lam Research Corporation | Proximity substrate preparation sequence, and method, apparatus, and system for implementing the same |
US7614411B2 (en) | 2002-09-30 | 2009-11-10 | Lam Research Corporation | Controls of ambient environment during wafer drying using proximity head |
US7367345B1 (en) | 2002-09-30 | 2008-05-06 | Lam Research Corporation | Apparatus and method for providing a confined liquid for immersion lithography |
US7329321B2 (en) * | 2002-09-30 | 2008-02-12 | Lam Research Corporation | Enhanced wafer cleaning method |
US7153400B2 (en) * | 2002-09-30 | 2006-12-26 | Lam Research Corporation | Apparatus and method for depositing and planarizing thin films of semiconductor wafers |
US7198055B2 (en) * | 2002-09-30 | 2007-04-03 | Lam Research Corporation | Meniscus, vacuum, IPA vapor, drying manifold |
US7513262B2 (en) | 2002-09-30 | 2009-04-07 | Lam Research Corporation | Substrate meniscus interface and methods for operation |
US7675000B2 (en) * | 2003-06-24 | 2010-03-09 | Lam Research Corporation | System method and apparatus for dry-in, dry-out, low defect laser dicing using proximity technology |
US8062471B2 (en) * | 2004-03-31 | 2011-11-22 | Lam Research Corporation | Proximity head heating method and apparatus |
US20070084730A1 (en) * | 2005-10-13 | 2007-04-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Plating apparatuses and processes |
US9987666B2 (en) | 2006-01-20 | 2018-06-05 | Naura Akrion Inc. | Composite transducer apparatus and system for processing a substrate and method of constructing the same |
US7784478B2 (en) * | 2006-01-20 | 2010-08-31 | Akrion Systems Llc | Acoustic energy system, method and apparatus for processing flat articles |
US9049520B2 (en) | 2006-01-20 | 2015-06-02 | Akrion Systems Llc | Composite transducer apparatus and system for processing a substrate and method of constructing the same |
US7928366B2 (en) * | 2006-10-06 | 2011-04-19 | Lam Research Corporation | Methods of and apparatus for accessing a process chamber using a dual zone gas injector with improved optical access |
US8813764B2 (en) | 2009-05-29 | 2014-08-26 | Lam Research Corporation | Method and apparatus for physical confinement of a liquid meniscus over a semiconductor wafer |
EP2073939B1 (de) * | 2006-10-16 | 2012-08-08 | Materials and Technologies Corporation | Vorrichtung zur nassverarbeitung unter verwendung eines fluidmeniskus |
JP4755573B2 (ja) * | 2006-11-30 | 2011-08-24 | 東京応化工業株式会社 | 処理装置および処理方法、ならびに表面処理治具 |
US8146902B2 (en) * | 2006-12-21 | 2012-04-03 | Lam Research Corporation | Hybrid composite wafer carrier for wet clean equipment |
US7975708B2 (en) * | 2007-03-30 | 2011-07-12 | Lam Research Corporation | Proximity head with angled vacuum conduit system, apparatus and method |
US8464736B1 (en) | 2007-03-30 | 2013-06-18 | Lam Research Corporation | Reclaim chemistry |
US8141566B2 (en) * | 2007-06-19 | 2012-03-27 | Lam Research Corporation | System, method and apparatus for maintaining separation of liquids in a controlled meniscus |
JP4971078B2 (ja) * | 2007-08-30 | 2012-07-11 | 東京応化工業株式会社 | 表面処理装置 |
JP5630527B2 (ja) * | 2013-04-12 | 2014-11-26 | 株式会社Sumco | 貼合せsoiウェーハの製造方法 |
JP6418554B2 (ja) * | 2015-06-10 | 2018-11-07 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP6593920B2 (ja) * | 2015-08-18 | 2019-10-23 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP6489524B2 (ja) * | 2015-08-18 | 2019-03-27 | 株式会社Screenホールディングス | 基板処理装置 |
JP6916003B2 (ja) * | 2017-02-24 | 2021-08-11 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP7017343B2 (ja) * | 2017-08-31 | 2022-02-08 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
Family Cites Families (98)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4027686A (en) * | 1973-01-02 | 1977-06-07 | Texas Instruments Incorporated | Method and apparatus for cleaning the surface of a semiconductor slice with a liquid spray of de-ionized water |
US3953265A (en) | 1975-04-28 | 1976-04-27 | International Business Machines Corporation | Meniscus-contained method of handling fluids in the manufacture of semiconductor wafers |
US4086870A (en) | 1977-06-30 | 1978-05-02 | International Business Machines Corporation | Novel resist spinning head |
US4367123A (en) | 1980-07-09 | 1983-01-04 | Olin Corporation | Precision spot plating process and apparatus |
JPS5852034B2 (ja) | 1981-08-26 | 1983-11-19 | 株式会社ソニツクス | 部分メツキ方法及びその装置 |
US4444492A (en) | 1982-05-15 | 1984-04-24 | General Signal Corporation | Apparatus for projecting a series of images onto dies of a semiconductor wafer |
US4838289A (en) | 1982-08-03 | 1989-06-13 | Texas Instruments Incorporated | Apparatus and method for edge cleaning |
JPS62150828A (ja) | 1985-12-25 | 1987-07-04 | Mitsubishi Electric Corp | ウエハ乾燥装置 |
JPH0712035B2 (ja) | 1989-04-20 | 1995-02-08 | 三菱電機株式会社 | 噴流式液処理装置 |
JPH02309638A (ja) | 1989-05-24 | 1990-12-25 | Fujitsu Ltd | ウエハーエッチング装置 |
JPH0628223Y2 (ja) | 1989-06-14 | 1994-08-03 | 大日本スクリーン製造株式会社 | 回転塗布装置 |
US5271774A (en) | 1990-03-01 | 1993-12-21 | U.S. Philips Corporation | Method for removing in a centrifuge a liquid from a surface of a substrate |
US5102494A (en) | 1990-07-13 | 1992-04-07 | Mobil Solar Energy Corporation | Wet-tip die for EFG cyrstal growth apparatus |
US5294257A (en) | 1991-10-28 | 1994-03-15 | International Business Machines Corporation | Edge masking spin tool |
US5343234A (en) | 1991-11-15 | 1994-08-30 | Kuehnle Manfred R | Digital color proofing system and method for offset and gravure printing |
JP2877216B2 (ja) | 1992-10-02 | 1999-03-31 | 東京エレクトロン株式会社 | 洗浄装置 |
US5339842A (en) * | 1992-12-18 | 1994-08-23 | Specialty Coating Systems, Inc. | Methods and apparatus for cleaning objects |
US5472502A (en) * | 1993-08-30 | 1995-12-05 | Semiconductor Systems, Inc. | Apparatus and method for spin coating wafers and the like |
JP3351082B2 (ja) * | 1994-01-14 | 2002-11-25 | ソニー株式会社 | 基板乾燥方法と、基板乾燥槽と、ウェーハ洗浄装置および半導体装置の製造方法 |
DE4413077C2 (de) * | 1994-04-15 | 1997-02-06 | Steag Micro Tech Gmbh | Verfahren und Vorrichtung zur chemischen Behandlung von Substraten |
US5807522A (en) | 1994-06-17 | 1998-09-15 | The Board Of Trustees Of The Leland Stanford Junior University | Methods for fabricating microarrays of biological samples |
ATE184185T1 (de) | 1994-06-30 | 1999-09-15 | Procter & Gamble | Flüssigkeitsleitendes gewebe mit oberflächenenergiegradienten |
US5705223A (en) | 1994-07-26 | 1998-01-06 | International Business Machine Corp. | Method and apparatus for coating a semiconductor wafer |
JP3247270B2 (ja) | 1994-08-25 | 2002-01-15 | 東京エレクトロン株式会社 | 処理装置及びドライクリーニング方法 |
US5558111A (en) | 1995-02-02 | 1996-09-24 | International Business Machines Corporation | Apparatus and method for carrier backing film reconditioning |
US5601655A (en) * | 1995-02-14 | 1997-02-11 | Bok; Hendrik F. | Method of cleaning substrates |
JPH08277486A (ja) | 1995-04-04 | 1996-10-22 | Dainippon Printing Co Ltd | リードフレームのめっき装置 |
TW386235B (en) | 1995-05-23 | 2000-04-01 | Tokyo Electron Ltd | Method for spin rinsing |
US5660642A (en) | 1995-05-26 | 1997-08-26 | The Regents Of The University Of California | Moving zone Marangoni drying of wet objects using naturally evaporated solvent vapor |
US5975098A (en) | 1995-12-21 | 1999-11-02 | Dainippon Screen Mfg. Co., Ltd. | Apparatus for and method of cleaning substrate |
DE19622015A1 (de) | 1996-05-31 | 1997-12-04 | Siemens Ag | Verfahren zum Ätzen von Zerstörungszonen an einem Halbleitersubstratrand sowie Ätzanlage |
US5985031A (en) | 1996-06-21 | 1999-11-16 | Micron Technology, Inc. | Spin coating spindle and chuck assembly |
TW357406B (en) | 1996-10-07 | 1999-05-01 | Tokyo Electron Ltd | Method and apparatus for cleaning and drying a substrate |
US5830334A (en) | 1996-11-07 | 1998-11-03 | Kobayashi; Hideyuki | Nozzle for fast plating with plating solution jetting and suctioning functions |
JPH1133506A (ja) | 1997-07-24 | 1999-02-09 | Tadahiro Omi | 流体処理装置及び洗浄処理システム |
JPH10163138A (ja) | 1996-11-29 | 1998-06-19 | Fujitsu Ltd | 半導体装置の製造方法および研磨装置 |
JPH10232498A (ja) | 1997-02-19 | 1998-09-02 | Nec Kyushu Ltd | 現像装置 |
JP2983495B2 (ja) * | 1997-05-20 | 1999-11-29 | 株式会社カイジョー | 基板の乾燥方法 |
JPH1131672A (ja) | 1997-07-10 | 1999-02-02 | Hitachi Ltd | 基板処理方法および基板処理装置 |
US6103636A (en) | 1997-08-20 | 2000-08-15 | Micron Technology, Inc. | Method and apparatus for selective removal of material from wafer alignment marks |
EP0905746A1 (de) | 1997-09-24 | 1999-03-31 | Interuniversitair Micro-Elektronica Centrum Vzw | Verfahren zum Entfernen einer Flüssigkeit von einer Oberfläche einer umlaufenden Substrat |
US6491764B2 (en) * | 1997-09-24 | 2002-12-10 | Interuniversitair Microelektronics Centrum (Imec) | Method and apparatus for removing a liquid from a surface of a rotating substrate |
EP0905747B1 (de) | 1997-09-24 | 2005-11-30 | Interuniversitair Micro-Elektronica Centrum Vzw | Verfahren und Vorrichtung zum Entfernen von einer Flüssigkeit von der Oberfläche eines rotierenden Substrats |
DE69828592T8 (de) | 1997-09-24 | 2006-06-08 | Interuniversitair Micro-Elektronica Centrum Vzw | Verfahren zum entfernen einer flüssigkeit von einer oberfläche einer substrat |
US6398975B1 (en) | 1997-09-24 | 2002-06-04 | Interuniversitair Microelektronica Centrum (Imec) | Method and apparatus for localized liquid treatment of the surface of a substrate |
US6260562B1 (en) * | 1997-10-20 | 2001-07-17 | Dainippon Screen Mfg. Co., Ltd. | Substrate cleaning apparatus and method |
CA2320278C (en) | 1998-02-12 | 2006-01-03 | Acm Research, Inc. | Plating apparatus and method |
WO1999049504A1 (fr) | 1998-03-26 | 1999-09-30 | Nikon Corporation | Procede et systeme d'exposition par projection |
US6108932A (en) | 1998-05-05 | 2000-08-29 | Steag Microtech Gmbh | Method and apparatus for thermocapillary drying |
JPH11350169A (ja) | 1998-06-10 | 1999-12-21 | Chemitoronics Co | ウエットエッチング装置およびウエットエッチングの方法 |
US6132586A (en) | 1998-06-11 | 2000-10-17 | Integrated Process Equipment Corporation | Method and apparatus for non-contact metal plating of semiconductor wafers using a bipolar electrode assembly |
US6689323B2 (en) | 1998-10-30 | 2004-02-10 | Agilent Technologies | Method and apparatus for liquid transfer |
US6092937A (en) | 1999-01-08 | 2000-07-25 | Fastar, Ltd. | Linear developer |
US20020121290A1 (en) | 1999-08-25 | 2002-09-05 | Applied Materials, Inc. | Method and apparatus for cleaning/drying hydrophobic wafers |
JP3635217B2 (ja) | 1999-10-05 | 2005-04-06 | 東京エレクトロン株式会社 | 液処理装置及びその方法 |
WO2001027357A1 (en) | 1999-10-12 | 2001-04-19 | Semitool, Inc. | Method and apparatus for executing plural processes on a microelectronic workpiece at a single processing station |
US6341998B1 (en) | 1999-11-04 | 2002-01-29 | Vlsi Technology, Inc. | Integrated circuit (IC) plating deposition system and method |
US6214513B1 (en) | 1999-11-24 | 2001-04-10 | Xerox Corporation | Slot coating under an electric field |
US6433541B1 (en) | 1999-12-23 | 2002-08-13 | Kla-Tencor Corporation | In-situ metalization monitoring using eddy current measurements during the process for removing the film |
US20030091754A1 (en) | 2000-02-11 | 2003-05-15 | Thami Chihani | Method for treating cellulosic fibres |
US6474786B2 (en) | 2000-02-24 | 2002-11-05 | The Board Of Trustees Of The Leland Stanford Junior University | Micromachined two-dimensional array droplet ejectors |
US6495005B1 (en) | 2000-05-01 | 2002-12-17 | International Business Machines Corporation | Electroplating apparatus |
AU6162501A (en) | 2000-05-16 | 2001-11-26 | Univ Minnesota | High mass throughput particle generation using multiple nozzle spraying |
WO2002001613A2 (en) | 2000-06-26 | 2002-01-03 | Applied Materials, Inc. | Method and apparatus for wafer cleaning |
US7234477B2 (en) | 2000-06-30 | 2007-06-26 | Lam Research Corporation | Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces |
US6488040B1 (en) | 2000-06-30 | 2002-12-03 | Lam Research Corporation | Capillary proximity heads for single wafer cleaning and drying |
US7000622B2 (en) | 2002-09-30 | 2006-02-21 | Lam Research Corporation | Methods and systems for processing a bevel edge of a substrate using a dynamic liquid meniscus |
US6530823B1 (en) | 2000-08-10 | 2003-03-11 | Nanoclean Technologies Inc | Methods for cleaning surfaces substantially free of contaminants |
JP2002075947A (ja) * | 2000-08-30 | 2002-03-15 | Alps Electric Co Ltd | ウェット処理装置 |
US6555017B1 (en) | 2000-10-13 | 2003-04-29 | The Regents Of The University Of Caliofornia | Surface contouring by controlled application of processing fluid using Marangoni effect |
TW563196B (en) | 2000-10-30 | 2003-11-21 | Dainippon Screen Mfg | Substrate processing apparatus |
US6531206B2 (en) | 2001-02-07 | 2003-03-11 | 3M Innovative Properties Company | Microstructured surface film assembly for liquid acquisition and transport |
US6754980B2 (en) | 2001-06-12 | 2004-06-29 | Goldfinger Technologies, Llc | Megasonic cleaner and dryer |
TW554069B (en) | 2001-08-10 | 2003-09-21 | Ebara Corp | Plating device and method |
JP2003115474A (ja) | 2001-10-03 | 2003-04-18 | Ebara Corp | 基板処理装置及び方法 |
JP2003151947A (ja) * | 2001-11-08 | 2003-05-23 | Seiko Epson Corp | 表面処理装置および表面処理方法 |
JP4003441B2 (ja) | 2001-11-08 | 2007-11-07 | セイコーエプソン株式会社 | 表面処理装置および表面処理方法 |
US6799584B2 (en) | 2001-11-09 | 2004-10-05 | Applied Materials, Inc. | Condensation-based enhancement of particle removal by suction |
JP3867776B2 (ja) * | 2001-11-16 | 2007-01-10 | リコープリンティングシステムズ株式会社 | インクジェット装置 |
US7069937B2 (en) | 2002-09-30 | 2006-07-04 | Lam Research Corporation | Vertical proximity processor |
SG140470A1 (en) | 2002-09-30 | 2008-03-28 | Lam Res Corp | System for substrate processing with meniscus, vacuum, ipa vapor, drying manifold |
US7153400B2 (en) | 2002-09-30 | 2006-12-26 | Lam Research Corporation | Apparatus and method for depositing and planarizing thin films of semiconductor wafers |
US7614411B2 (en) | 2002-09-30 | 2009-11-10 | Lam Research Corporation | Controls of ambient environment during wafer drying using proximity head |
US7293571B2 (en) | 2002-09-30 | 2007-11-13 | Lam Research Corporation | Substrate proximity processing housing and insert for generating a fluid meniscus |
US6988326B2 (en) | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Phobic barrier meniscus separation and containment |
US7198055B2 (en) | 2002-09-30 | 2007-04-03 | Lam Research Corporation | Meniscus, vacuum, IPA vapor, drying manifold |
US7513262B2 (en) | 2002-09-30 | 2009-04-07 | Lam Research Corporation | Substrate meniscus interface and methods for operation |
US6954993B1 (en) | 2002-09-30 | 2005-10-18 | Lam Research Corporation | Concentric proximity processing head |
US7383843B2 (en) | 2002-09-30 | 2008-06-10 | Lam Research Corporation | Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer |
US6988327B2 (en) | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Methods and systems for processing a substrate using a dynamic liquid meniscus |
US7252097B2 (en) | 2002-09-30 | 2007-08-07 | Lam Research Corporation | System and method for integrating in-situ metrology within a wafer process |
US7389783B2 (en) | 2002-09-30 | 2008-06-24 | Lam Research Corporation | Proximity meniscus manifold |
US7093375B2 (en) | 2002-09-30 | 2006-08-22 | Lam Research Corporation | Apparatus and method for utilizing a meniscus in substrate processing |
SG121822A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
EP1489461A1 (de) | 2003-06-11 | 2004-12-22 | ASML Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung |
US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
US7353560B2 (en) | 2003-12-18 | 2008-04-08 | Lam Research Corporation | Proximity brush unit apparatus and method |
US7003899B1 (en) | 2004-09-30 | 2006-02-28 | Lam Research Corporation | System and method for modulating flow through multiple ports in a proximity head |
-
2004
- 2004-04-01 US US10/817,398 patent/US7614411B2/en not_active Expired - Fee Related
-
2005
- 2005-03-23 SG SG200708895-8A patent/SG136145A1/en unknown
- 2005-03-23 SG SG200502519A patent/SG115836A1/en unknown
- 2005-03-29 AT AT05251901T patent/ATE467230T1/de not_active IP Right Cessation
- 2005-03-29 DE DE602005021010T patent/DE602005021010D1/de active Active
- 2005-03-29 EP EP05251901A patent/EP1583136B1/de not_active Not-in-force
- 2005-03-31 JP JP2005100376A patent/JP4630103B2/ja not_active Expired - Fee Related
- 2005-04-01 KR KR1020050027650A patent/KR101147944B1/ko not_active IP Right Cessation
- 2005-04-01 MY MYPI20051478A patent/MY143956A/en unknown
- 2005-04-01 CN CNB2005100716972A patent/CN100452308C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2005311354A (ja) | 2005-11-04 |
ATE467230T1 (de) | 2010-05-15 |
KR101147944B1 (ko) | 2012-05-24 |
SG115836A1 (en) | 2005-10-28 |
US20050145267A1 (en) | 2005-07-07 |
KR20060045439A (ko) | 2006-05-17 |
EP1583136A1 (de) | 2005-10-05 |
CN1707758A (zh) | 2005-12-14 |
CN100452308C (zh) | 2009-01-14 |
SG136145A1 (en) | 2007-10-29 |
US7614411B2 (en) | 2009-11-10 |
JP4630103B2 (ja) | 2011-02-09 |
EP1583136B1 (de) | 2010-05-05 |
MY143956A (en) | 2011-07-29 |
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