DE602005012546D1 - Cmp-zusammensetzung mit einem tensid - Google Patents

Cmp-zusammensetzung mit einem tensid

Info

Publication number
DE602005012546D1
DE602005012546D1 DE602005012546T DE602005012546T DE602005012546D1 DE 602005012546 D1 DE602005012546 D1 DE 602005012546D1 DE 602005012546 T DE602005012546 T DE 602005012546T DE 602005012546 T DE602005012546 T DE 602005012546T DE 602005012546 D1 DE602005012546 D1 DE 602005012546D1
Authority
DE
Germany
Prior art keywords
substrate
tensid
cmp composition
polishing
polishing composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005012546T
Other languages
English (en)
Inventor
Tao Sun
Robert Medsker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials Inc
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of DE602005012546D1 publication Critical patent/DE602005012546D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/8404—Processes or apparatus specially adapted for manufacturing record carriers manufacturing base layers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
DE602005012546T 2004-10-28 2005-10-21 Cmp-zusammensetzung mit einem tensid Active DE602005012546D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/975,585 US7524347B2 (en) 2004-10-28 2004-10-28 CMP composition comprising surfactant
PCT/US2005/038028 WO2006049912A2 (en) 2004-10-28 2005-10-21 Cmp composition comprising surfactant

Publications (1)

Publication Number Publication Date
DE602005012546D1 true DE602005012546D1 (de) 2009-03-12

Family

ID=35840204

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005012546T Active DE602005012546D1 (de) 2004-10-28 2005-10-21 Cmp-zusammensetzung mit einem tensid

Country Status (11)

Country Link
US (1) US7524347B2 (de)
EP (1) EP1829093B1 (de)
JP (1) JP4965451B2 (de)
KR (1) KR101109300B1 (de)
CN (2) CN101044600A (de)
AT (1) ATE421769T1 (de)
DE (1) DE602005012546D1 (de)
IL (1) IL182536A (de)
MY (1) MY143941A (de)
TW (1) TWI313703B (de)
WO (1) WO2006049912A2 (de)

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US20080096385A1 (en) * 2006-09-27 2008-04-24 Hynix Semiconductor Inc. Slurry composition for forming tungsten pattern and method for manufacturing semiconductor device using the same
US20080148652A1 (en) * 2006-12-21 2008-06-26 Junaid Ahmed Siddiqui Compositions for chemical mechanical planarization of copper
US8901053B2 (en) * 2007-09-14 2014-12-02 Kao Corporation Aqueous cleaning composition for substrate for perpendicular magnetic recording hard disk
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KR20190098142A (ko) * 2016-12-28 2019-08-21 니타 하스 인코포레이티드 연마용 조성물
CN107541731A (zh) * 2017-09-05 2018-01-05 江苏飞拓界面工程科技有限公司 一种铝及铝合金高效环保抛光液及其制备方法
US11447661B2 (en) * 2017-12-27 2022-09-20 Kao Corporation Method for producing aluminum platter
JP7183863B2 (ja) * 2018-03-13 2022-12-06 Jsr株式会社 化学機械研磨用組成物及び化学機械研磨方法
US10479911B1 (en) 2018-06-05 2019-11-19 Cabot Microelectronics Corporation Composition and method for polishing memory hard disks exhibiting reduced edge roll off
JP2019131814A (ja) * 2019-03-08 2019-08-08 株式会社フジミインコーポレーテッド 研磨用組成物の製造方法
WO2021231090A1 (en) * 2020-05-11 2021-11-18 Versum Materials Us, Llc Novel pad-1 n-a-bottle (pib) technology for advanced chemical-mechanical planarization (cmp) slurries and processes
JP2023536850A (ja) * 2020-07-29 2023-08-30 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー 銅及びスルーシリコンビア（ｔｓｖ）化学機械平坦化（ｃｍｐ）のためのパッドインボトル（ｐｉｂ）技術
CN112646151B (zh) * 2020-12-09 2022-08-02 华南师范大学 一种可降解的生物基缓释型铅离子螯合剂及其制备方法和应用

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Also Published As

Publication number Publication date
TW200621961A (en) 2006-07-01
US7524347B2 (en) 2009-04-28
IL182536A (en) 2014-06-30
CN102337080B (zh) 2016-01-20
ATE421769T1 (de) 2009-02-15
IL182536A0 (en) 2007-09-20
MY143941A (en) 2011-07-29
KR101109300B1 (ko) 2012-01-31
CN101044600A (zh) 2007-09-26
EP1829093A2 (de) 2007-09-05
WO2006049912A3 (en) 2006-10-26
TWI313703B (en) 2009-08-21
EP1829093B1 (de) 2009-01-21
CN102337080A (zh) 2012-02-01
US20060096496A1 (en) 2006-05-11
KR20070072617A (ko) 2007-07-04
JP4965451B2 (ja) 2012-07-04
WO2006049912A2 (en) 2006-05-11
JP2008517791A (ja) 2008-05-29

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