DE602005012110D1 - Schaltvorrichtung mit integrierter nanoröhrchen- und feldeffekt-technologie - Google Patents

Schaltvorrichtung mit integrierter nanoröhrchen- und feldeffekt-technologie

Info

Publication number
DE602005012110D1
DE602005012110D1 DE602005012110T DE602005012110T DE602005012110D1 DE 602005012110 D1 DE602005012110 D1 DE 602005012110D1 DE 602005012110 T DE602005012110 T DE 602005012110T DE 602005012110 T DE602005012110 T DE 602005012110T DE 602005012110 D1 DE602005012110 D1 DE 602005012110D1
Authority
DE
Germany
Prior art keywords
switching device
field effect
devices
switching
nanotube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005012110T
Other languages
English (en)
Inventor
Claude L Bertin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nantero Inc
Original Assignee
Nantero Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nantero Inc filed Critical Nantero Inc
Publication of DE602005012110D1 publication Critical patent/DE602005012110D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C23/00—Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0094—Switches making use of nanoelectromechanical systems [NEMS]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/54—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements of vacuum tubes
    • H03K17/545—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements of vacuum tubes using microengineered devices, e.g. field emission devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/17—Memory cell being a nanowire transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/94—Specified use of nanostructure for electronic or optoelectronic application in a logic circuit
DE602005012110T 2004-06-18 2005-05-26 Schaltvorrichtung mit integrierter nanoröhrchen- und feldeffekt-technologie Active DE602005012110D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US58101504P 2004-06-18 2004-06-18
US11/033,089 US7288970B2 (en) 2004-06-18 2005-01-10 Integrated nanotube and field effect switching device
PCT/US2005/018535 WO2006078299A2 (en) 2004-06-18 2005-05-26 Integrated nanotube and field effect switching device

Publications (1)

Publication Number Publication Date
DE602005012110D1 true DE602005012110D1 (de) 2009-02-12

Family

ID=36073317

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005012110T Active DE602005012110D1 (de) 2004-06-18 2005-05-26 Schaltvorrichtung mit integrierter nanoröhrchen- und feldeffekt-technologie

Country Status (6)

Country Link
US (3) US7288970B2 (de)
EP (1) EP1776763B1 (de)
AT (1) ATE419676T1 (de)
CA (1) CA2570486C (de)
DE (1) DE602005012110D1 (de)
WO (1) WO2006078299A2 (de)

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WO2006078299A2 (en) 2006-07-27
EP1776763A2 (de) 2007-04-25
ATE419676T1 (de) 2009-01-15
US20060061389A1 (en) 2006-03-23
CA2570486A1 (en) 2006-07-27
US7859311B2 (en) 2010-12-28
WO2006078299A3 (en) 2006-10-12
US7288970B2 (en) 2007-10-30
US7564269B2 (en) 2009-07-21
EP1776763A4 (de) 2007-10-17
CA2570486C (en) 2011-10-18
EP1776763B1 (de) 2008-12-31
US20080218210A1 (en) 2008-09-11

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