DE602005005302D1 - Vertikal-feldeffekttransistoren mit in einem abstandsschichtdefinierten durchgang aufgewachsenen halbleitenden nanoröhren - Google Patents

Vertikal-feldeffekttransistoren mit in einem abstandsschichtdefinierten durchgang aufgewachsenen halbleitenden nanoröhren

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Publication number
DE602005005302D1
DE602005005302D1 DE602005005302T DE602005005302T DE602005005302D1 DE 602005005302 D1 DE602005005302 D1 DE 602005005302D1 DE 602005005302 T DE602005005302 T DE 602005005302T DE 602005005302 T DE602005005302 T DE 602005005302T DE 602005005302 D1 DE602005005302 D1 DE 602005005302D1
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Germany
Prior art keywords
field effect
effect transistors
vertical field
spacer
nanotube
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Active
Application number
DE602005005302T
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English (en)
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DE602005005302T2 (de
Inventor
Toshiharu Furukawa
Mark Charles Hakey
Steven John Holmes
David Vaclav Horak
Peter Mitchell
Larry Alan Nesbit
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International Business Machines Corp
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International Business Machines Corp
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/491—Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/701—Integrated with dissimilar structures on a common substrate
    • Y10S977/707—Integrated with dissimilar structures on a common substrate having different types of nanoscale structures or devices on a common substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/701—Integrated with dissimilar structures on a common substrate
    • Y10S977/72—On an electrically conducting, semi-conducting, or semi-insulating substrate
    • Y10S977/721—On a silicon substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/724—Devices having flexible or movable element
DE602005005302T 2004-01-29 2005-01-13 Vertikal-feldeffekttransistoren mit in einem abstandsschichtdefinierten durchgang aufgewachsenen halbleitenden nanoröhren Active DE602005005302T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US767039 1985-08-19
US10/767,039 US7211844B2 (en) 2004-01-29 2004-01-29 Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage
PCT/EP2005/050128 WO2005076382A1 (en) 2004-01-29 2005-01-13 Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage

Publications (2)

Publication Number Publication Date
DE602005005302D1 true DE602005005302D1 (de) 2008-04-24
DE602005005302T2 DE602005005302T2 (de) 2009-03-12

Family

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Family Applications (1)

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DE602005005302T Active DE602005005302T2 (de) 2004-01-29 2005-01-13 Vertikal-feldeffekttransistoren mit in einem abstandsschichtdefinierten durchgang aufgewachsenen halbleitenden nanoröhren

Country Status (11)

Country Link
US (2) US7211844B2 (de)
EP (1) EP1709700B1 (de)
JP (1) JP4521409B2 (de)
KR (1) KR100974162B1 (de)
CN (1) CN100568573C (de)
AT (1) ATE389242T1 (de)
DE (1) DE602005005302T2 (de)
IL (1) IL177126A (de)
RU (1) RU2338683C2 (de)
TW (1) TWI335669B (de)
WO (1) WO2005076382A1 (de)

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Also Published As

Publication number Publication date
DE602005005302T2 (de) 2009-03-12
RU2006130863A (ru) 2008-03-10
US20050167740A1 (en) 2005-08-04
WO2005076382A1 (en) 2005-08-18
ATE389242T1 (de) 2008-03-15
JP4521409B2 (ja) 2010-08-11
EP1709700B1 (de) 2008-03-12
KR20060125845A (ko) 2006-12-06
JP2007520073A (ja) 2007-07-19
CN1910767A (zh) 2007-02-07
EP1709700A1 (de) 2006-10-11
IL177126A (en) 2010-06-30
RU2338683C2 (ru) 2008-11-20
TW200537687A (en) 2005-11-16
TWI335669B (en) 2011-01-01
CN100568573C (zh) 2009-12-09
US20050266627A1 (en) 2005-12-01
KR100974162B1 (ko) 2010-08-04
US7211844B2 (en) 2007-05-01
US7329567B2 (en) 2008-02-12
IL177126A0 (en) 2006-12-10

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