DE602005004321D1 - Ein Heizverfahren und eine Heizvorrichtung in Nahköpfen für die Halbleiterwaferherstellung - Google Patents
Ein Heizverfahren und eine Heizvorrichtung in Nahköpfen für die HalbleiterwaferherstellungInfo
- Publication number
- DE602005004321D1 DE602005004321D1 DE602005004321T DE602005004321T DE602005004321D1 DE 602005004321 D1 DE602005004321 D1 DE 602005004321D1 DE 602005004321 T DE602005004321 T DE 602005004321T DE 602005004321 T DE602005004321 T DE 602005004321T DE 602005004321 D1 DE602005004321 D1 DE 602005004321D1
- Authority
- DE
- Germany
- Prior art keywords
- fluid
- proximity head
- heating
- proximity
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/02—Heating or cooling
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/816,487 US8062471B2 (en) | 2004-03-31 | 2004-03-31 | Proximity head heating method and apparatus |
US816487 | 2004-03-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE602005004321D1 true DE602005004321D1 (de) | 2008-03-06 |
DE602005004321T2 DE602005004321T2 (de) | 2008-12-24 |
Family
ID=34887763
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602005004321T Active DE602005004321T2 (de) | 2004-03-31 | 2005-03-21 | Ein Heizverfahren und eine Heizvorrichtung in Nahköpfen für die Halbleiterwaferherstellung |
Country Status (10)
Country | Link |
---|---|
US (2) | US8062471B2 (de) |
EP (1) | EP1583135B1 (de) |
JP (1) | JP4621052B2 (de) |
KR (1) | KR101209537B1 (de) |
CN (1) | CN100505170C (de) |
AT (1) | ATE384334T1 (de) |
DE (1) | DE602005004321T2 (de) |
MY (1) | MY138431A (de) |
SG (1) | SG115790A1 (de) |
TW (1) | TWI289322B (de) |
Families Citing this family (35)
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US7329321B2 (en) * | 2002-09-30 | 2008-02-12 | Lam Research Corporation | Enhanced wafer cleaning method |
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US8062471B2 (en) * | 2004-03-31 | 2011-11-22 | Lam Research Corporation | Proximity head heating method and apparatus |
US9117860B2 (en) * | 2006-08-30 | 2015-08-25 | Lam Research Corporation | Controlled ambient system for interface engineering |
US7946303B2 (en) * | 2006-09-29 | 2011-05-24 | Lam Research Corporation | Carrier for reducing entrance and/or exit marks left by a substrate-processing meniscus |
KR101453115B1 (ko) * | 2006-09-29 | 2014-10-27 | 램 리써치 코포레이션 | 기판-프로세싱 메니스커스에 의해 남겨진 입구 마크 및 출구 마크의 감소 |
CA2663325A1 (en) * | 2006-10-16 | 2008-04-24 | Materials And Technologies Corporation | Wet processing using a fluid meniscus, apparatus and method |
US8309470B2 (en) * | 2006-12-18 | 2012-11-13 | Lam Research Corporation | In-situ reclaim of volatile components |
US7897213B2 (en) * | 2007-02-08 | 2011-03-01 | Lam Research Corporation | Methods for contained chemical surface treatment |
DE102007026635B4 (de) * | 2007-06-06 | 2010-07-29 | Atotech Deutschland Gmbh | Vorrichtung zum nasschemischen Behandeln von Ware, Verwendung eines Strömungsorgans, Verfahren zum Einbauen eines Strömungsorgans in die Vorrichtung sowie Verfahren zur Herstellung einer nasschemisch behandelten Ware |
KR100908017B1 (ko) * | 2007-11-13 | 2009-07-15 | 조선대학교산학협력단 | 연마패드 컨디셔닝 장치 |
JP5312477B2 (ja) * | 2007-12-20 | 2013-10-09 | ラム リサーチ コーポレーション | ウエハに対して均一な流体流れを提供する近接ヘッドを構成する方法 |
US8317934B2 (en) * | 2009-05-13 | 2012-11-27 | Lam Research Corporation | Multi-stage substrate cleaning method and apparatus |
US20110139183A1 (en) * | 2009-12-11 | 2011-06-16 | Katrina Mikhaylichenko | System and method of preventing pattern collapse using low surface tension fluid |
EP2383771B1 (de) * | 2010-04-29 | 2020-04-22 | EV Group GmbH | Vorrichtung und Verfahren zum Lösen einer Polymerschicht von einer Oberfläche eines Substrats |
JP5031066B2 (ja) * | 2010-05-26 | 2012-09-19 | 兵庫県 | クラスタービーム発生装置、基板処理装置、クラスタービーム発生方法及び基板処理方法 |
FI124113B (fi) * | 2010-08-30 | 2014-03-31 | Beneq Oy | Laitteisto ja menetelmä substraatin pinnan muokkaamiseksi |
KR20120034948A (ko) * | 2010-10-04 | 2012-04-13 | 삼성전자주식회사 | 기판 건조 장치 및 이를 이용한 기판 건조 방법 |
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JP5894854B2 (ja) * | 2012-05-11 | 2016-03-30 | 株式会社日立ハイテクノロジーズ | 検査装置 |
US9870933B2 (en) * | 2013-02-08 | 2018-01-16 | Lam Research Ag | Process and apparatus for treating surfaces of wafer-shaped articles |
US20140352735A1 (en) * | 2013-05-29 | 2014-12-04 | Beijing Sevenstar Electronics Co. Ltd. | Zero lag dispense apparatus |
DE102013010934A1 (de) * | 2013-06-29 | 2015-01-15 | Feinmetall Gmbh | Prüfvorrichtung zur elektrischen Prüfung eines elektrischen Prüflings |
JP2015115492A (ja) * | 2013-12-12 | 2015-06-22 | 株式会社Screenホールディングス | 基板処理装置 |
US9966282B2 (en) * | 2014-09-30 | 2018-05-08 | Shibaura Mechatronics Corporation | Substrate processing apparatus and substrate processing method |
JP6558845B2 (ja) * | 2014-10-10 | 2019-08-14 | 株式会社ホロン | 被洗浄体の異物除去装置およびその異物除去方法 |
JP6467260B2 (ja) * | 2015-03-24 | 2019-02-06 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
US10283384B2 (en) * | 2015-04-27 | 2019-05-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for etching etch layer and wafer etching apparatus |
JP6505495B2 (ja) * | 2015-04-28 | 2019-04-24 | 株式会社ディスコ | 加工装置 |
RU2599314C1 (ru) * | 2015-04-29 | 2016-10-10 | Андрей Николаевич Алексеев | Способ поддержания температуры нагреваемых электролитов ванн, работающих "под током" |
RU2632727C2 (ru) * | 2016-02-26 | 2017-10-09 | Андрей Николаевич Алексеев | Способ поддержания уровня нагреваемого электролита ванны, работающей "под током" |
JP6709010B2 (ja) * | 2019-04-16 | 2020-06-10 | 株式会社ホロン | 被洗浄体の異物除去装置およびその異物除去方法 |
CN113441449B (zh) * | 2020-03-27 | 2022-12-09 | 先丰通讯股份有限公司 | 喷盘检测系统及其检测方法 |
CN111604307B (zh) * | 2020-05-24 | 2022-07-05 | 国网黑龙江省电力有限公司齐齐哈尔供电公司 | 一种电力工程绝缘子清扫系统及清扫方法 |
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-
2004
- 2004-03-31 US US10/816,487 patent/US8062471B2/en not_active Expired - Fee Related
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2005
- 2005-03-18 SG SG200501830A patent/SG115790A1/en unknown
- 2005-03-21 EP EP05251719A patent/EP1583135B1/de not_active Not-in-force
- 2005-03-21 AT AT05251719T patent/ATE384334T1/de not_active IP Right Cessation
- 2005-03-21 DE DE602005004321T patent/DE602005004321T2/de active Active
- 2005-03-29 MY MYPI20051369A patent/MY138431A/en unknown
- 2005-03-30 KR KR1020050026675A patent/KR101209537B1/ko not_active IP Right Cessation
- 2005-03-30 TW TW094110018A patent/TWI289322B/zh not_active IP Right Cessation
- 2005-03-30 JP JP2005096581A patent/JP4621052B2/ja not_active Expired - Fee Related
- 2005-03-31 CN CNB200510063774XA patent/CN100505170C/zh not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
---|---|
CN1722372A (zh) | 2006-01-18 |
KR20060045033A (ko) | 2006-05-16 |
ATE384334T1 (de) | 2008-02-15 |
US8102014B2 (en) | 2012-01-24 |
JP2005328038A (ja) | 2005-11-24 |
MY138431A (en) | 2009-06-30 |
DE602005004321T2 (de) | 2008-12-24 |
CN100505170C (zh) | 2009-06-24 |
TWI289322B (en) | 2007-11-01 |
US20050221621A1 (en) | 2005-10-06 |
EP1583135A1 (de) | 2005-10-05 |
KR101209537B1 (ko) | 2012-12-07 |
TW200601399A (en) | 2006-01-01 |
JP4621052B2 (ja) | 2011-01-26 |
US8062471B2 (en) | 2011-11-22 |
US20110008916A1 (en) | 2011-01-13 |
SG115790A1 (en) | 2005-10-28 |
EP1583135B1 (de) | 2008-01-16 |
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