DE602004026112D1 - Prozess zum Kapseln von Komponenten und gekapselte Komponenten - Google Patents

Prozess zum Kapseln von Komponenten und gekapselte Komponenten

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Publication number
DE602004026112D1
DE602004026112D1 DE602004026112T DE602004026112T DE602004026112D1 DE 602004026112 D1 DE602004026112 D1 DE 602004026112D1 DE 602004026112 T DE602004026112 T DE 602004026112T DE 602004026112 T DE602004026112 T DE 602004026112T DE 602004026112 D1 DE602004026112 D1 DE 602004026112D1
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Germany
Prior art keywords
regions
base substrate
wafer level
functional
components
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DE602004026112T
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English (en)
Inventor
Juergen Leib
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Schott AG
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Schott AG
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    • H01L2924/013—Alloys
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
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Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10356885B4 (de) 2003-12-03 2005-11-03 Schott Ag Verfahren zum Gehäusen von Bauelementen und gehäustes Bauelement
US7371676B2 (en) * 2005-04-08 2008-05-13 Micron Technology, Inc. Method for fabricating semiconductor components with through wire interconnects
US7393770B2 (en) * 2005-05-19 2008-07-01 Micron Technology, Inc. Backside method for fabricating semiconductor components with conductive interconnects
US7307348B2 (en) * 2005-12-07 2007-12-11 Micron Technology, Inc. Semiconductor components having through wire interconnects (TWI)
US7659612B2 (en) * 2006-04-24 2010-02-09 Micron Technology, Inc. Semiconductor components having encapsulated through wire interconnects (TWI)
US7531443B2 (en) * 2006-12-08 2009-05-12 Micron Technology, Inc. Method and system for fabricating semiconductor components with through interconnects and back side redistribution conductors
US8178965B2 (en) * 2007-03-14 2012-05-15 Infineon Technologies Ag Semiconductor module having deflecting conductive layer over a spacer structure
DE102007030284B4 (de) * 2007-06-29 2009-12-31 Schott Ag Verfahren zum Verpacken von Halbleiter-Bauelementen und verfahrensgemäß hergestelltes Zwischenprodukt
US8580596B2 (en) * 2009-04-10 2013-11-12 Nxp, B.V. Front end micro cavity
US20100320595A1 (en) * 2009-06-22 2010-12-23 Honeywell International Inc. Hybrid hermetic interface chip
DE102011018295B4 (de) * 2011-04-20 2021-06-24 Austriamicrosystems Ag Verfahren zum Schneiden eines Trägers für elektrische Bauelemente
KR101131782B1 (ko) 2011-07-19 2012-03-30 디지털옵틱스 코포레이션 이스트 집적 모듈용 기판
US9768223B2 (en) * 2011-12-21 2017-09-19 Xintec Inc. Electronics device package and fabrication method thereof
US9406590B2 (en) * 2013-04-19 2016-08-02 Xintec Inc. Chip package and manufacturing method thereof
US9070747B2 (en) * 2013-06-27 2015-06-30 Flipchip International Llc Electroplating using dielectric bridges
MA36343B1 (fr) * 2013-10-14 2016-04-29 Nemotek Technologies Procédé de métallisation en cuivre destiné à la fabrication d'un circuit intégré en utilisant la technologie wafer level packaging 3d
KR20160090972A (ko) * 2015-01-22 2016-08-02 에스케이하이닉스 주식회사 이미지 센서 패키지 및 제조 방법
DE102015203393A1 (de) 2015-02-25 2016-08-25 Infineon Technologies Ag Halbleiterelement und Verfahren zu Herstellen von diesem
US10818625B1 (en) * 2019-06-19 2020-10-27 Nanya Technology Corporation Electronic device

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01217993A (ja) * 1988-02-26 1989-08-31 Hitachi Ltd 半導体装置
US5354695A (en) * 1992-04-08 1994-10-11 Leedy Glenn J Membrane dielectric isolation IC fabrication
US5946553A (en) * 1991-06-04 1999-08-31 Micron Technology, Inc. Process for manufacturing a semiconductor package with bi-substrate die
EP0547807A3 (en) * 1991-12-16 1993-09-22 General Electric Company Packaged electronic system
JP2948018B2 (ja) * 1992-03-17 1999-09-13 三菱電機株式会社 半導体装置およびその製造方法
JPH06295962A (ja) * 1992-10-20 1994-10-21 Ibiden Co Ltd 電子部品搭載用基板およびその製造方法並びに電子部品搭載装置
JPH06244437A (ja) * 1993-02-17 1994-09-02 Oki Electric Ind Co Ltd 半導体ウエハ
US5635762A (en) 1993-05-18 1997-06-03 U.S. Philips Corporation Flip chip semiconductor device with dual purpose metallized ground conductor
EP0740853B1 (de) 1994-11-22 1999-01-13 Koninklijke Philips Electronics N.V. Halbleiter mit einem träger auf dem ein substrat mit einem halbleiter-element mittels einer klebeschicht und ein leiterbahn-muster befestigt sind
JP3487524B2 (ja) * 1994-12-20 2004-01-19 株式会社ルネサステクノロジ 半導体装置及びその製造方法
DE19620940A1 (de) * 1995-11-17 1997-05-22 Werner Prof Dr Buff Elektronisches Bauelement und Verfahren zu seiner Herstellung
US6171888B1 (en) * 1996-03-08 2001-01-09 Lsi Logic Corp. Multi-layer tab tape having distinct signal, power and ground planes, semiconductor device assembly employing same, apparatus for and method of assembling same
JP3170199B2 (ja) * 1996-03-15 2001-05-28 株式会社東芝 半導体装置及びその製造方法及び基板フレーム
JP2891665B2 (ja) * 1996-03-22 1999-05-17 株式会社日立製作所 半導体集積回路装置およびその製造方法
US5904496A (en) * 1997-01-24 1999-05-18 Chipscale, Inc. Wafer fabrication of inside-wrapped contacts for electronic devices
US6051489A (en) * 1997-05-13 2000-04-18 Chipscale, Inc. Electronic component package with posts on the active side of the substrate
JP3641122B2 (ja) * 1997-12-26 2005-04-20 ローム株式会社 半導体発光素子、半導体発光モジュール、およびこれらの製造方法
IL123207A0 (en) 1998-02-06 1998-09-24 Shellcase Ltd Integrated circuit device
US6114221A (en) * 1998-03-16 2000-09-05 International Business Machines Corporation Method and apparatus for interconnecting multiple circuit chips
JPH11297972A (ja) * 1998-04-10 1999-10-29 Fujitsu Ltd 半導体装置の製造方法
JP3129288B2 (ja) * 1998-05-28 2001-01-29 日本電気株式会社 マイクロ波集積回路マルチチップモジュール、マイクロ波集積回路マルチチップモジュールの実装構造
US6075712A (en) * 1999-01-08 2000-06-13 Intel Corporation Flip-chip having electrical contact pads on the backside of the chip
EP1148546A1 (de) * 2000-04-19 2001-10-24 Infineon Technologies AG Verfahren zur Justierung von Strukturen auf einem Halbleiter-substrat
DE10104868A1 (de) * 2001-02-03 2002-08-22 Bosch Gmbh Robert Mikromechanisches Bauelement sowie ein Verfahren zur Herstellung eines mikromechanischen Bauelements
US6717254B2 (en) * 2001-02-22 2004-04-06 Tru-Si Technologies, Inc. Devices having substrates with opening passing through the substrates and conductors in the openings, and methods of manufacture
WO2003019653A2 (de) 2001-08-24 2003-03-06 Schott Glas Verfahren zum kontaktieren und gehäusen von integrierten schaltungen
EP1419102A2 (de) * 2001-08-24 2004-05-19 Schott Ag Verfahren zur herstellung von mikro-elektromechanischen bauelementen
DE10141571B8 (de) * 2001-08-24 2005-05-25 Schott Ag Verfahren zum Zusammenbau eines Halbleiterbauelements und damit hergestellte integrierte Schaltungsanordnung, die für dreidimensionale, mehrschichtige Schaltungen geeignet ist
US6559530B2 (en) * 2001-09-19 2003-05-06 Raytheon Company Method of integrating MEMS device with low-resistivity silicon substrates
TW560018B (en) * 2001-10-30 2003-11-01 Asia Pacific Microsystems Inc A wafer level packaged structure and method for manufacturing the same
US7098072B2 (en) * 2002-03-01 2006-08-29 Agng, Llc Fluxless assembly of chip size semiconductor packages
US6806557B2 (en) * 2002-09-30 2004-10-19 Motorola, Inc. Hermetically sealed microdevices having a single crystalline silicon getter for maintaining vacuum
TWI227050B (en) * 2002-10-11 2005-01-21 Sanyo Electric Co Semiconductor device and method for manufacturing the same
TWI241700B (en) * 2003-01-22 2005-10-11 Siliconware Precision Industries Co Ltd Packaging assembly with integrated circuits redistribution routing semiconductor die and method for fabrication
JP2004349593A (ja) * 2003-05-26 2004-12-09 Sanyo Electric Co Ltd 半導体装置及びその製造方法
US6777263B1 (en) * 2003-08-21 2004-08-17 Agilent Technologies, Inc. Film deposition to enhance sealing yield of microcap wafer-level package with vias
DE10356885B4 (de) 2003-12-03 2005-11-03 Schott Ag Verfahren zum Gehäusen von Bauelementen und gehäustes Bauelement

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IL175341A0 (en) 2006-09-05
ATE461525T1 (de) 2010-04-15
WO2005055310A3 (en) 2005-11-03
IL175341A (en) 2010-06-30
US20100187669A1 (en) 2010-07-29
DE10356885A1 (de) 2005-07-07
US8309384B2 (en) 2012-11-13
JP5329758B2 (ja) 2013-10-30
DE10356885B4 (de) 2005-11-03
CN1890789A (zh) 2007-01-03
WO2005055310A2 (en) 2005-06-16
JP2007513507A (ja) 2007-05-24
US7700397B2 (en) 2010-04-20
US20080038868A1 (en) 2008-02-14
EP1700337A2 (de) 2006-09-13
TW200524066A (en) 2005-07-16

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