DE602004017752D1 - Eitungen - Google Patents

Eitungen

Info

Publication number
DE602004017752D1
DE602004017752D1 DE602004017752T DE602004017752T DE602004017752D1 DE 602004017752 D1 DE602004017752 D1 DE 602004017752D1 DE 602004017752 T DE602004017752 T DE 602004017752T DE 602004017752 T DE602004017752 T DE 602004017752T DE 602004017752 D1 DE602004017752 D1 DE 602004017752D1
Authority
DE
Germany
Prior art keywords
ations
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004017752T
Other languages
English (en)
Inventor
David Tsang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Spintronics Technology Inc
Original Assignee
Applied Spintronics Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Spintronics Technology Inc filed Critical Applied Spintronics Technology Inc
Publication of DE602004017752D1 publication Critical patent/DE602004017752D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
DE602004017752T 2003-08-21 2004-08-19 Eitungen Active DE602004017752D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/646,455 US6870759B2 (en) 2002-12-09 2003-08-21 MRAM array with segmented magnetic write lines
PCT/US2004/026920 WO2005022545A1 (en) 2003-08-21 2004-08-19 Mram array with segmented magnetic write lines

Publications (1)

Publication Number Publication Date
DE602004017752D1 true DE602004017752D1 (de) 2008-12-24

Family

ID=34273293

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004017752T Active DE602004017752D1 (de) 2003-08-21 2004-08-19 Eitungen

Country Status (5)

Country Link
US (1) US6870759B2 (de)
EP (1) EP1661140B1 (de)
CN (1) CN1856836B (de)
DE (1) DE602004017752D1 (de)
WO (1) WO2005022545A1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6724652B2 (en) * 2002-05-02 2004-04-20 Micron Technology, Inc. Low remanence flux concentrator for MRAM devices
JP2004145952A (ja) * 2002-10-23 2004-05-20 Nec Electronics Corp Ｍｒａｍ及びその書込方法
US7002228B2 (en) 2003-02-18 2006-02-21 Micron Technology, Inc. Diffusion barrier for improving the thermal stability of MRAM devices
US6982902B2 (en) * 2003-10-03 2006-01-03 Infineon Technologies Ag MRAM array having a segmented bit line
US6937506B2 (en) * 2004-01-08 2005-08-30 Hewlett-Packard Development Company, L.P. Magnetic memory device
US7102921B2 (en) * 2004-05-11 2006-09-05 Hewlett-Packard Development Company, L.P. Magnetic memory device
US7379329B2 (en) * 2004-11-03 2008-05-27 United States Of America As Represented By The Secretary Of The Navy Addressing architecture for perpendicular giant magnetoresistance memory
KR100735748B1 (ko) 2005-11-09 2007-07-06 삼성전자주식회사 가변성 저항체들을 데이터 저장요소들로 채택하는 메모리셀들을 갖는 반도체 소자들, 이를 채택하는 시스템들 및 그구동방법들
KR100735750B1 (ko) 2005-12-15 2007-07-06 삼성전자주식회사 복수개의 균일한 기준 데이터들을 생성하는 기준 셀 블록및 감지증폭 유니트들을 구비하는 반도체 소자들 및 이를채택하는 시스템들
US7480172B2 (en) 2006-01-25 2009-01-20 Magic Technologies, Inc. Programming scheme for segmented word line MRAM array
KR100809597B1 (ko) * 2006-04-06 2008-03-04 삼성전자주식회사 미세 패턴 형성 방법 및 이를 이용한 반도체 메모리 장치의형성 방법
JP5096690B2 (ja) * 2006-04-26 2012-12-12 株式会社日立製作所 磁気メモリセル及びランダムアクセスメモリ
US8004881B2 (en) * 2007-12-19 2011-08-23 Qualcomm Incorporated Magnetic tunnel junction device with separate read and write paths
WO2015047194A1 (en) * 2013-09-24 2015-04-02 National University Of Singapore Spin orbit and spin transfer torque-based spintronics devices
CN105493189B (zh) 2013-09-27 2018-12-11 英特尔公司 用于优化stt-mram尺寸和写入误差率的装置和方法
US9478273B2 (en) * 2013-10-31 2016-10-25 Intel Corporation Low resistance bitline and sourceline apparatus for improving read and write operations of a nonvolatile memory
US10685693B2 (en) 2018-07-16 2020-06-16 Taiwan Semiconductor Manufacturing Co., Ltd. Method for writing to magnetic random access memory
US10879313B2 (en) 2019-05-13 2020-12-29 Sandisk Technologies Llc Three-dimensional cross-point memory device containing inter-level connection structures and method of making the same
US10991761B2 (en) 2019-05-13 2021-04-27 Sandisk Technologies Llc Three-dimensional cross-point memory device containing inter-level connection structures and method of making the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5659499A (en) 1995-11-24 1997-08-19 Motorola Magnetic memory and method therefor
JPH11224495A (ja) * 1998-02-05 1999-08-17 Hitachi Ltd 半導体集積回路装置
US5940319A (en) 1998-08-31 1999-08-17 Motorola, Inc. Magnetic random access memory and fabricating method thereof
US6153443A (en) 1998-12-21 2000-11-28 Motorola, Inc. Method of fabricating a magnetic random access memory
US6211090B1 (en) 2000-03-21 2001-04-03 Motorola, Inc. Method of fabricating flux concentrating layer for use with magnetoresistive random access memories
KR100451096B1 (ko) 2000-09-19 2004-10-02 엔이씨 일렉트로닉스 가부시키가이샤 자기메모리셀어레이를 갖는 비휘발성 반도체메모리장치
US6335890B1 (en) 2000-11-01 2002-01-01 International Business Machines Corporation Segmented write line architecture for writing magnetic random access memories
JP3920564B2 (ja) 2000-12-25 2007-05-30 株式会社東芝 磁気ランダムアクセスメモリ
US6475812B2 (en) 2001-03-09 2002-11-05 Hewlett Packard Company Method for fabricating cladding layer in top conductor
US6490217B1 (en) 2001-05-23 2002-12-03 International Business Machines Corporation Select line architecture for magnetic random access memories
JP4780874B2 (ja) * 2001-09-04 2011-09-28 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置

Also Published As

Publication number Publication date
CN1856836A (zh) 2006-11-01
EP1661140A4 (de) 2006-10-18
US6870759B2 (en) 2005-03-22
EP1661140B1 (de) 2008-11-12
US20040264239A1 (en) 2004-12-30
WO2005022545A1 (en) 2005-03-10
EP1661140A1 (de) 2006-05-31
CN1856836B (zh) 2011-06-01

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