DE602004017752D1 - Eitungen - Google Patents
EitungenInfo
- Publication number
- DE602004017752D1 DE602004017752D1 DE602004017752T DE602004017752T DE602004017752D1 DE 602004017752 D1 DE602004017752 D1 DE 602004017752D1 DE 602004017752 T DE602004017752 T DE 602004017752T DE 602004017752 T DE602004017752 T DE 602004017752T DE 602004017752 D1 DE602004017752 D1 DE 602004017752D1
- Authority
- DE
- Germany
- Prior art keywords
- ations
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/646,455 US6870759B2 (en) | 2002-12-09 | 2003-08-21 | MRAM array with segmented magnetic write lines |
PCT/US2004/026920 WO2005022545A1 (en) | 2003-08-21 | 2004-08-19 | Mram array with segmented magnetic write lines |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602004017752D1 true DE602004017752D1 (de) | 2008-12-24 |
Family
ID=34273293
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602004017752T Active DE602004017752D1 (de) | 2003-08-21 | 2004-08-19 | Eitungen |
Country Status (5)
Country | Link |
---|---|
US (1) | US6870759B2 (de) |
EP (1) | EP1661140B1 (de) |
CN (1) | CN1856836B (de) |
DE (1) | DE602004017752D1 (de) |
WO (1) | WO2005022545A1 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6724652B2 (en) * | 2002-05-02 | 2004-04-20 | Micron Technology, Inc. | Low remanence flux concentrator for MRAM devices |
JP2004145952A (ja) * | 2002-10-23 | 2004-05-20 | Nec Electronics Corp | Mram及びその書込方法 |
US7002228B2 (en) | 2003-02-18 | 2006-02-21 | Micron Technology, Inc. | Diffusion barrier for improving the thermal stability of MRAM devices |
US6982902B2 (en) * | 2003-10-03 | 2006-01-03 | Infineon Technologies Ag | MRAM array having a segmented bit line |
US6937506B2 (en) * | 2004-01-08 | 2005-08-30 | Hewlett-Packard Development Company, L.P. | Magnetic memory device |
US7102921B2 (en) * | 2004-05-11 | 2006-09-05 | Hewlett-Packard Development Company, L.P. | Magnetic memory device |
US7379329B2 (en) * | 2004-11-03 | 2008-05-27 | United States Of America As Represented By The Secretary Of The Navy | Addressing architecture for perpendicular giant magnetoresistance memory |
KR100735748B1 (ko) | 2005-11-09 | 2007-07-06 | 삼성전자주식회사 | 가변성 저항체들을 데이터 저장요소들로 채택하는 메모리셀들을 갖는 반도체 소자들, 이를 채택하는 시스템들 및 그구동방법들 |
KR100735750B1 (ko) | 2005-12-15 | 2007-07-06 | 삼성전자주식회사 | 복수개의 균일한 기준 데이터들을 생성하는 기준 셀 블록및 감지증폭 유니트들을 구비하는 반도체 소자들 및 이를채택하는 시스템들 |
US7480172B2 (en) | 2006-01-25 | 2009-01-20 | Magic Technologies, Inc. | Programming scheme for segmented word line MRAM array |
KR100809597B1 (ko) * | 2006-04-06 | 2008-03-04 | 삼성전자주식회사 | 미세 패턴 형성 방법 및 이를 이용한 반도체 메모리 장치의형성 방법 |
JP5096690B2 (ja) * | 2006-04-26 | 2012-12-12 | 株式会社日立製作所 | 磁気メモリセル及びランダムアクセスメモリ |
US8004881B2 (en) * | 2007-12-19 | 2011-08-23 | Qualcomm Incorporated | Magnetic tunnel junction device with separate read and write paths |
WO2015047194A1 (en) * | 2013-09-24 | 2015-04-02 | National University Of Singapore | Spin orbit and spin transfer torque-based spintronics devices |
CN105493189B (zh) | 2013-09-27 | 2018-12-11 | 英特尔公司 | 用于优化stt-mram尺寸和写入误差率的装置和方法 |
US9478273B2 (en) * | 2013-10-31 | 2016-10-25 | Intel Corporation | Low resistance bitline and sourceline apparatus for improving read and write operations of a nonvolatile memory |
US10685693B2 (en) | 2018-07-16 | 2020-06-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for writing to magnetic random access memory |
US10879313B2 (en) | 2019-05-13 | 2020-12-29 | Sandisk Technologies Llc | Three-dimensional cross-point memory device containing inter-level connection structures and method of making the same |
US10991761B2 (en) | 2019-05-13 | 2021-04-27 | Sandisk Technologies Llc | Three-dimensional cross-point memory device containing inter-level connection structures and method of making the same |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5659499A (en) | 1995-11-24 | 1997-08-19 | Motorola | Magnetic memory and method therefor |
JPH11224495A (ja) * | 1998-02-05 | 1999-08-17 | Hitachi Ltd | 半導体集積回路装置 |
US5940319A (en) | 1998-08-31 | 1999-08-17 | Motorola, Inc. | Magnetic random access memory and fabricating method thereof |
US6153443A (en) | 1998-12-21 | 2000-11-28 | Motorola, Inc. | Method of fabricating a magnetic random access memory |
US6211090B1 (en) | 2000-03-21 | 2001-04-03 | Motorola, Inc. | Method of fabricating flux concentrating layer for use with magnetoresistive random access memories |
KR100451096B1 (ko) | 2000-09-19 | 2004-10-02 | 엔이씨 일렉트로닉스 가부시키가이샤 | 자기메모리셀어레이를 갖는 비휘발성 반도체메모리장치 |
US6335890B1 (en) | 2000-11-01 | 2002-01-01 | International Business Machines Corporation | Segmented write line architecture for writing magnetic random access memories |
JP3920564B2 (ja) | 2000-12-25 | 2007-05-30 | 株式会社東芝 | 磁気ランダムアクセスメモリ |
US6475812B2 (en) | 2001-03-09 | 2002-11-05 | Hewlett Packard Company | Method for fabricating cladding layer in top conductor |
US6490217B1 (en) | 2001-05-23 | 2002-12-03 | International Business Machines Corporation | Select line architecture for magnetic random access memories |
JP4780874B2 (ja) * | 2001-09-04 | 2011-09-28 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
-
2003
- 2003-08-21 US US10/646,455 patent/US6870759B2/en not_active Expired - Fee Related
-
2004
- 2004-08-19 DE DE602004017752T patent/DE602004017752D1/de active Active
- 2004-08-19 WO PCT/US2004/026920 patent/WO2005022545A1/en active Application Filing
- 2004-08-19 CN CN2004800273287A patent/CN1856836B/zh not_active Expired - Fee Related
- 2004-08-19 EP EP04781579A patent/EP1661140B1/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN1856836A (zh) | 2006-11-01 |
EP1661140A4 (de) | 2006-10-18 |
US6870759B2 (en) | 2005-03-22 |
EP1661140B1 (de) | 2008-11-12 |
US20040264239A1 (en) | 2004-12-30 |
WO2005022545A1 (en) | 2005-03-10 |
EP1661140A1 (de) | 2006-05-31 |
CN1856836B (zh) | 2011-06-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |