DE60144340D1 - Nicht-flüchtiges SONOS-Halbleiterspeicherbauelement - Google Patents

Nicht-flüchtiges SONOS-Halbleiterspeicherbauelement

Info

Publication number
DE60144340D1
DE60144340D1 DE60144340T DE60144340T DE60144340D1 DE 60144340 D1 DE60144340 D1 DE 60144340D1 DE 60144340 T DE60144340 T DE 60144340T DE 60144340 T DE60144340 T DE 60144340T DE 60144340 D1 DE60144340 D1 DE 60144340D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
volatile sonos
volatile
sonos semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60144340T
Other languages
English (en)
Inventor
Mark T Ramsbey
Jean Y Yang
Hidehiko Shiraiwa
Buskirk Michael A Van
David M Rogers
Ravi Sunkavalli
Janet Wang
Narbeh Derhacobian
Yider Wu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Spansion LLC
Original Assignee
Spansion LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Spansion LLC filed Critical Spansion LLC
Priority claimed from PCT/US2001/046124 external-priority patent/WO2002045171A1/en
Application granted granted Critical
Publication of DE60144340D1 publication Critical patent/DE60144340D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/954—Making oxide-nitride-oxide device
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/981—Utilizing varying dielectric thickness
DE60144340T 2000-11-28 2001-11-15 Nicht-flüchtiges SONOS-Halbleiterspeicherbauelement Expired - Lifetime DE60144340D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/723,635 US6465306B1 (en) 2000-11-28 2000-11-28 Simultaneous formation of charge storage and bitline to wordline isolation
US09/893,026 US6541816B2 (en) 2000-11-28 2001-06-27 Planar structure for non-volatile memory devices
PCT/US2001/046124 WO2002045171A1 (en) 2000-11-28 2001-11-15 Planar structure and methods of fabricating non-volatile memory devices

Publications (1)

Publication Number Publication Date
DE60144340D1 true DE60144340D1 (de) 2011-05-12

Family

ID=24907066

Family Applications (2)

Application Number Title Priority Date Filing Date
DE60141035T Expired - Lifetime DE60141035D1 (de) 2000-11-28 2001-08-07 Bitleitung zu wortleitungsisolation
DE60144340T Expired - Lifetime DE60144340D1 (de) 2000-11-28 2001-11-15 Nicht-flüchtiges SONOS-Halbleiterspeicherbauelement

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE60141035T Expired - Lifetime DE60141035D1 (de) 2000-11-28 2001-08-07 Bitleitung zu wortleitungsisolation

Country Status (8)

Country Link
US (3) US6465306B1 (de)
EP (1) EP1338034B1 (de)
JP (1) JP5132024B2 (de)
KR (1) KR100810710B1 (de)
CN (1) CN100530600C (de)
AU (1) AU2001283186A1 (de)
DE (2) DE60141035D1 (de)
WO (1) WO2002045157A1 (de)

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CN100530600C (zh) 2009-08-19
DE60141035D1 (de) 2010-02-25
US6555436B2 (en) 2003-04-29
US6541816B2 (en) 2003-04-01
CN1478298A (zh) 2004-02-25
KR100810710B1 (ko) 2008-03-07
WO2002045157A1 (en) 2002-06-06
EP1338034B1 (de) 2010-01-06
US6465306B1 (en) 2002-10-15
EP1338034A1 (de) 2003-08-27
KR20030060958A (ko) 2003-07-16
JP5132024B2 (ja) 2013-01-30
US20020063277A1 (en) 2002-05-30
AU2001283186A1 (en) 2002-06-11
US20020192910A1 (en) 2002-12-19
JP2004515076A (ja) 2004-05-20

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