DE60142035D1 - Verfahren zur herstellung von vias in silizium carbid und dessen bauelementen und schaltkreise - Google Patents

Verfahren zur herstellung von vias in silizium carbid und dessen bauelementen und schaltkreise

Info

Publication number
DE60142035D1
DE60142035D1 DE60142035T DE60142035T DE60142035D1 DE 60142035 D1 DE60142035 D1 DE 60142035D1 DE 60142035 T DE60142035 T DE 60142035T DE 60142035 T DE60142035 T DE 60142035T DE 60142035 D1 DE60142035 D1 DE 60142035D1
Authority
DE
Germany
Prior art keywords
silicon carbide
vias
circuits
preparation
components
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60142035T
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English (en)
Inventor
Zoltan Ring
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of DE60142035D1 publication Critical patent/DE60142035D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
DE60142035T 2000-04-11 2001-03-30 Verfahren zur herstellung von vias in silizium carbid und dessen bauelementen und schaltkreise Expired - Lifetime DE60142035D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/546,821 US6475889B1 (en) 2000-04-11 2000-04-11 Method of forming vias in silicon carbide and resulting devices and circuits
PCT/US2001/010289 WO2001078120A1 (en) 2000-04-11 2001-03-30 Method of forming vias in silicon carbide and resulting devices and circuits

Publications (1)

Publication Number Publication Date
DE60142035D1 true DE60142035D1 (de) 2010-06-17

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE60142035T Expired - Lifetime DE60142035D1 (de) 2000-04-11 2001-03-30 Verfahren zur herstellung von vias in silizium carbid und dessen bauelementen und schaltkreise

Country Status (11)

Country Link
US (4) US6475889B1 (de)
EP (2) EP1273032B1 (de)
JP (1) JP5142438B2 (de)
KR (1) KR100797130B1 (de)
CN (1) CN1197126C (de)
AT (1) ATE467231T1 (de)
AU (1) AU2001249659A1 (de)
CA (1) CA2406054C (de)
DE (1) DE60142035D1 (de)
TW (1) TW571383B (de)
WO (1) WO2001078120A1 (de)

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EP1273032B1 (de) 2010-05-05
ATE467231T1 (de) 2010-05-15
EP2182548B1 (de) 2012-11-07
CA2406054C (en) 2010-12-21
JP5142438B2 (ja) 2013-02-13
US6649497B2 (en) 2003-11-18
US20020066960A1 (en) 2002-06-06
WO2001078120A1 (en) 2001-10-18
EP2182548A2 (de) 2010-05-05
US6946739B2 (en) 2005-09-20
AU2001249659A1 (en) 2001-10-23
US20040241970A1 (en) 2004-12-02
US6475889B1 (en) 2002-11-05
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US6515303B2 (en) 2003-02-04
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US20020055265A1 (en) 2002-05-09
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TW571383B (en) 2004-01-11
CA2406054A1 (en) 2001-10-18

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