DE60136593D1 - Reaktor für die Abscheidung eines dünnen Films - Google Patents

Reaktor für die Abscheidung eines dünnen Films

Info

Publication number
DE60136593D1
DE60136593D1 DE60136593T DE60136593T DE60136593D1 DE 60136593 D1 DE60136593 D1 DE 60136593D1 DE 60136593 T DE60136593 T DE 60136593T DE 60136593 T DE60136593 T DE 60136593T DE 60136593 D1 DE60136593 D1 DE 60136593D1
Authority
DE
Germany
Prior art keywords
wafer
reactor
reactor block
communication
connection line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60136593T
Other languages
English (en)
Inventor
Young-Hoon Park
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IPS Ltd
Original Assignee
IPS Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by IPS Ltd filed Critical IPS Ltd
Application granted granted Critical
Publication of DE60136593D1 publication Critical patent/DE60136593D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54Apparatus specially adapted for continuous coating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45574Nozzles for more than one gas
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45512Premixing before introduction in the reaction chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45565Shower nozzles
DE60136593T 2000-06-24 2001-06-05 Reaktor für die Abscheidung eines dünnen Films Expired - Fee Related DE60136593D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020000035102A KR100332314B1 (ko) 2000-06-24 2000-06-24 박막증착용 반응용기

Publications (1)

Publication Number Publication Date
DE60136593D1 true DE60136593D1 (de) 2009-01-02

Family

ID=19673716

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60136593T Expired - Fee Related DE60136593D1 (de) 2000-06-24 2001-06-05 Reaktor für die Abscheidung eines dünnen Films

Country Status (8)

Country Link
US (1) US6852168B2 (de)
EP (1) EP1167570B1 (de)
JP (1) JP3565799B2 (de)
KR (1) KR100332314B1 (de)
AT (1) ATE414803T1 (de)
DE (1) DE60136593D1 (de)
SG (1) SG96224A1 (de)
TW (1) TW523785B (de)

Families Citing this family (119)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6671223B2 (en) * 1996-12-20 2003-12-30 Westerngeco, L.L.C. Control devices for controlling the position of a marine seismic streamer
US6765178B2 (en) 2000-12-29 2004-07-20 Applied Materials, Inc. Chamber for uniform substrate heating
US6825447B2 (en) 2000-12-29 2004-11-30 Applied Materials, Inc. Apparatus and method for uniform substrate heating and contaminate collection
US6878206B2 (en) * 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6660126B2 (en) 2001-03-02 2003-12-09 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
KR100408519B1 (ko) * 2001-05-03 2003-12-06 삼성전자주식회사 원자층 형성용 반응챔버
KR100422398B1 (ko) * 2001-06-29 2004-03-12 주식회사 하이닉스반도체 박막 증착 장비
US20030198754A1 (en) * 2001-07-16 2003-10-23 Ming Xi Aluminum oxide chamber and process
US20080268635A1 (en) * 2001-07-25 2008-10-30 Sang-Ho Yu Process for forming cobalt and cobalt silicide materials in copper contact applications
US9051641B2 (en) * 2001-07-25 2015-06-09 Applied Materials, Inc. Cobalt deposition on barrier surfaces
US20030029715A1 (en) * 2001-07-25 2003-02-13 Applied Materials, Inc. An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
US20090004850A1 (en) 2001-07-25 2009-01-01 Seshadri Ganguli Process for forming cobalt and cobalt silicide materials in tungsten contact applications
JP2005504885A (ja) * 2001-07-25 2005-02-17 アプライド マテリアルズ インコーポレイテッド 新規なスパッタ堆積方法を使用したバリア形成
US8110489B2 (en) * 2001-07-25 2012-02-07 Applied Materials, Inc. Process for forming cobalt-containing materials
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
JP4236882B2 (ja) * 2001-08-01 2009-03-11 東京エレクトロン株式会社 ガス処理装置およびガス処理方法
US6718126B2 (en) * 2001-09-14 2004-04-06 Applied Materials, Inc. Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition
US6936906B2 (en) * 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US7049226B2 (en) * 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US6916398B2 (en) * 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US7780785B2 (en) * 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US6773507B2 (en) * 2001-12-06 2004-08-10 Applied Materials, Inc. Apparatus and method for fast-cycle atomic layer deposition
US6729824B2 (en) 2001-12-14 2004-05-04 Applied Materials, Inc. Dual robot processing system
US6793733B2 (en) * 2002-01-25 2004-09-21 Applied Materials Inc. Gas distribution showerhead
AU2003238853A1 (en) * 2002-01-25 2003-09-02 Applied Materials, Inc. Apparatus for cyclical deposition of thin films
US20040060514A1 (en) * 2002-01-25 2004-04-01 Applied Materials, Inc. A Delaware Corporation Gas distribution showerhead
US6866746B2 (en) * 2002-01-26 2005-03-15 Applied Materials, Inc. Clamshell and small volume chamber with fixed substrate support
US6911391B2 (en) * 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US6972267B2 (en) * 2002-03-04 2005-12-06 Applied Materials, Inc. Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
US7279432B2 (en) * 2002-04-16 2007-10-09 Applied Materials, Inc. System and method for forming an integrated barrier layer
US6955211B2 (en) 2002-07-17 2005-10-18 Applied Materials, Inc. Method and apparatus for gas temperature control in a semiconductor processing system
US7186385B2 (en) 2002-07-17 2007-03-06 Applied Materials, Inc. Apparatus for providing gas to a processing chamber
US7066194B2 (en) * 2002-07-19 2006-06-27 Applied Materials, Inc. Valve design and configuration for fast delivery system
US6772072B2 (en) 2002-07-22 2004-08-03 Applied Materials, Inc. Method and apparatus for monitoring solid precursor delivery
US6915592B2 (en) * 2002-07-29 2005-07-12 Applied Materials, Inc. Method and apparatus for generating gas to a processing chamber
US7141483B2 (en) * 2002-09-19 2006-11-28 Applied Materials, Inc. Nitrous oxide anneal of TEOS/ozone CVD for improved gapfill
US7431967B2 (en) * 2002-09-19 2008-10-07 Applied Materials, Inc. Limited thermal budget formation of PMD layers
US20070212850A1 (en) * 2002-09-19 2007-09-13 Applied Materials, Inc. Gap-fill depositions in the formation of silicon containing dielectric materials
US7335609B2 (en) * 2004-08-27 2008-02-26 Applied Materials, Inc. Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials
US6821563B2 (en) * 2002-10-02 2004-11-23 Applied Materials, Inc. Gas distribution system for cyclical layer deposition
US20040065255A1 (en) * 2002-10-02 2004-04-08 Applied Materials, Inc. Cyclical layer deposition system
WO2004032200A2 (en) * 2002-10-03 2004-04-15 Genus, Inc. Systems and methods for improved gas delivery
US20070051471A1 (en) * 2002-10-04 2007-03-08 Applied Materials, Inc. Methods and apparatus for stripping
US20040069227A1 (en) * 2002-10-09 2004-04-15 Applied Materials, Inc. Processing chamber configured for uniform gas flow
US6905737B2 (en) * 2002-10-11 2005-06-14 Applied Materials, Inc. Method of delivering activated species for rapid cyclical deposition
EP1420080A3 (de) * 2002-11-14 2005-11-09 Applied Materials, Inc. Vorrichtung und Verfahren zu hybriden chemischen Abscheidungsverfahren
US6868859B2 (en) * 2003-01-29 2005-03-22 Applied Materials, Inc. Rotary gas valve for pulsing a gas
US6994319B2 (en) * 2003-01-29 2006-02-07 Applied Materials, Inc. Membrane gas valve for pulsing a gas
US20040177813A1 (en) 2003-03-12 2004-09-16 Applied Materials, Inc. Substrate support lift mechanism
KR100505367B1 (ko) * 2003-03-27 2005-08-04 주식회사 아이피에스 박막증착용 반응용기
US7342984B1 (en) 2003-04-03 2008-03-11 Zilog, Inc. Counting clock cycles over the duration of a first character and using a remainder value to determine when to sample a bit of a second character
JPWO2004111297A1 (ja) * 2003-06-10 2006-07-20 東京エレクトロン株式会社 処理ガス供給機構、成膜装置および成膜方法
US20050067103A1 (en) * 2003-09-26 2005-03-31 Applied Materials, Inc. Interferometer endpoint monitoring device
US20050095859A1 (en) * 2003-11-03 2005-05-05 Applied Materials, Inc. Precursor delivery system with rate control
US7879182B2 (en) * 2003-12-26 2011-02-01 Foundation For Advancement Of International Science Shower plate, plasma processing apparatus, and product manufacturing method
US7892357B2 (en) * 2004-01-12 2011-02-22 Axcelis Technologies, Inc. Gas distribution plate assembly for plasma reactors
US8083853B2 (en) 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US7785672B2 (en) 2004-04-20 2010-08-31 Applied Materials, Inc. Method of controlling the film properties of PECVD-deposited thin films
US20050233092A1 (en) * 2004-04-20 2005-10-20 Applied Materials, Inc. Method of controlling the uniformity of PECVD-deposited thin films
US8328939B2 (en) * 2004-05-12 2012-12-11 Applied Materials, Inc. Diffuser plate with slit valve compensation
US20060005771A1 (en) * 2004-07-12 2006-01-12 Applied Materials, Inc. Apparatus and method of shaping profiles of large-area PECVD electrodes
US20050252449A1 (en) * 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US8074599B2 (en) * 2004-05-12 2011-12-13 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
US8119210B2 (en) * 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
US8323754B2 (en) * 2004-05-21 2012-12-04 Applied Materials, Inc. Stabilization of high-k dielectric materials
US20060019033A1 (en) * 2004-05-21 2006-01-26 Applied Materials, Inc. Plasma treatment of hafnium-containing materials
US20060153995A1 (en) * 2004-05-21 2006-07-13 Applied Materials, Inc. Method for fabricating a dielectric stack
US20070212847A1 (en) * 2004-08-04 2007-09-13 Applied Materials, Inc. Multi-step anneal of thin films for film densification and improved gap-fill
US7642171B2 (en) * 2004-08-04 2010-01-05 Applied Materials, Inc. Multi-step anneal of thin films for film densification and improved gap-fill
US7429410B2 (en) * 2004-09-20 2008-09-30 Applied Materials, Inc. Diffuser gravity support
TWI287279B (en) * 2004-09-20 2007-09-21 Applied Materials Inc Diffuser gravity support
US20070020890A1 (en) * 2005-07-19 2007-01-25 Applied Materials, Inc. Method and apparatus for semiconductor processing
US20070049043A1 (en) * 2005-08-23 2007-03-01 Applied Materials, Inc. Nitrogen profile engineering in HI-K nitridation for device performance enhancement and reliability improvement
US7402534B2 (en) * 2005-08-26 2008-07-22 Applied Materials, Inc. Pretreatment processes within a batch ALD reactor
US20070056843A1 (en) * 2005-09-13 2007-03-15 Applied Materials, Inc. Method of processing a substrate using a large-area magnetron sputtering chamber with individually controlled sputtering zones
US20070056845A1 (en) * 2005-09-13 2007-03-15 Applied Materials, Inc. Multiple zone sputtering target created through conductive and insulation bonding
US20070065578A1 (en) * 2005-09-21 2007-03-22 Applied Materials, Inc. Treatment processes for a batch ALD reactor
US7464917B2 (en) * 2005-10-07 2008-12-16 Appiled Materials, Inc. Ampoule splash guard apparatus
TWI332532B (en) * 2005-11-04 2010-11-01 Applied Materials Inc Apparatus and process for plasma-enhanced atomic layer deposition
US20070138134A1 (en) * 2005-12-19 2007-06-21 Chuan-Han Hsieh Etching apparatus and etching method
US20070252299A1 (en) * 2006-04-27 2007-11-01 Applied Materials, Inc. Synchronization of precursor pulsing and wafer rotation
US20070259111A1 (en) * 2006-05-05 2007-11-08 Singh Kaushal K Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric film
US7798096B2 (en) * 2006-05-05 2010-09-21 Applied Materials, Inc. Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool
KR101218555B1 (ko) * 2006-07-27 2013-01-18 주성엔지니어링(주) 기판처리장치
US7601648B2 (en) 2006-07-31 2009-10-13 Applied Materials, Inc. Method for fabricating an integrated gate dielectric layer for field effect transistors
US8092695B2 (en) * 2006-10-30 2012-01-10 Applied Materials, Inc. Endpoint detection for photomask etching
US20080099436A1 (en) * 2006-10-30 2008-05-01 Michael Grimbergen Endpoint detection for photomask etching
US7775508B2 (en) 2006-10-31 2010-08-17 Applied Materials, Inc. Ampoule for liquid draw and vapor draw with a continuous level sensor
KR101355638B1 (ko) * 2006-11-09 2014-01-29 한국에이에스엠지니텍 주식회사 원자층 증착 장치
US20080206987A1 (en) * 2007-01-29 2008-08-28 Gelatos Avgerinos V Process for tungsten nitride deposition by a temperature controlled lid assembly
US20080302303A1 (en) * 2007-06-07 2008-12-11 Applied Materials, Inc. Methods and apparatus for depositing a uniform silicon film with flow gradient designs
US20080317973A1 (en) * 2007-06-22 2008-12-25 White John M Diffuser support
KR100925568B1 (ko) * 2007-07-13 2009-11-05 (주)러셀 화학 기상 증착장치의 반응챔버
US8097082B2 (en) * 2008-04-28 2012-01-17 Applied Materials, Inc. Nonplanar faceplate for a plasma processing chamber
US8146896B2 (en) * 2008-10-31 2012-04-03 Applied Materials, Inc. Chemical precursor ampoule for vapor deposition processes
KR101334643B1 (ko) * 2009-07-02 2013-12-02 주식회사 원익아이피에스 박막증착장치
KR101311362B1 (ko) * 2009-07-02 2013-09-25 주식회사 원익아이피에스 박막증착장치
DE102009043848A1 (de) * 2009-08-25 2011-03-03 Aixtron Ag CVD-Verfahren und CVD-Reaktor
JP5457109B2 (ja) 2009-09-02 2014-04-02 東京エレクトロン株式会社 プラズマ処理装置
TWI436831B (zh) 2009-12-10 2014-05-11 Orbotech Lt Solar Llc 真空處理裝置之噴灑頭總成
US8778204B2 (en) 2010-10-29 2014-07-15 Applied Materials, Inc. Methods for reducing photoresist interference when monitoring a target layer in a plasma process
US8459276B2 (en) 2011-05-24 2013-06-11 Orbotech LT Solar, LLC. Broken wafer recovery system
US8961804B2 (en) 2011-10-25 2015-02-24 Applied Materials, Inc. Etch rate detection for photomask etching
US8808559B2 (en) 2011-11-22 2014-08-19 Applied Materials, Inc. Etch rate detection for reflective multi-material layers etching
US8900469B2 (en) 2011-12-19 2014-12-02 Applied Materials, Inc. Etch rate detection for anti-reflective coating layer and absorber layer etching
KR101367670B1 (ko) * 2011-12-28 2014-02-28 엘아이지에이디피 주식회사 진공 챔버
US9805939B2 (en) 2012-10-12 2017-10-31 Applied Materials, Inc. Dual endpoint detection for advanced phase shift and binary photomasks
US8778574B2 (en) 2012-11-30 2014-07-15 Applied Materials, Inc. Method for etching EUV material layers utilized to form a photomask
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
WO2015023435A1 (en) * 2013-08-12 2015-02-19 Applied Materials, Inc. Recursive pumping for symmetrical gas exhaust to control critical dimension uniformity in plasma reactors
US10465288B2 (en) * 2014-08-15 2019-11-05 Applied Materials, Inc. Nozzle for uniform plasma processing
KR102214350B1 (ko) 2016-05-20 2021-02-09 어플라이드 머티어리얼스, 인코포레이티드 반도체 처리를 위한 가스 분배 샤워헤드
KR20210070109A (ko) 2019-12-04 2021-06-14 주성엔지니어링(주) 기판 처리 장치, 기판 처리 장치 마련 방법 및 기판 처리 방법
CN113832448B (zh) * 2020-06-23 2023-06-09 拓荆科技股份有限公司 一种半导体薄膜沉积设备及半导体镀膜方法
KR102466189B1 (ko) 2020-08-25 2022-11-10 주식회사 한화 수소 라디칼을 이용한 기판 처리장치
CN114351117B (zh) * 2020-10-13 2022-12-20 东部超导科技(苏州)有限公司 喷淋板、配置喷淋板的mocvd反应系统及其使用方法
CN112609170B (zh) * 2020-11-24 2022-12-09 鑫天虹(厦门)科技有限公司 原子层沉积设备与制程方法
CN114737172A (zh) * 2022-04-21 2022-07-12 成都高真科技有限公司 一种化学气相沉积装置

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
JPH0672308B2 (ja) * 1988-07-04 1994-09-14 新技術事業団 大気圧プラズマ反応方法
JPH02114530A (ja) * 1988-10-25 1990-04-26 Mitsubishi Electric Corp 薄膜形成装置
JPH088257B2 (ja) * 1989-04-13 1996-01-29 三菱電機株式会社 常圧cvd装置
US5134965A (en) * 1989-06-16 1992-08-04 Hitachi, Ltd. Processing apparatus and method for plasma processing
JP2939823B2 (ja) * 1990-07-20 1999-08-25 日本酸素株式会社 有機金属気相成長装置
US5387557A (en) * 1991-10-23 1995-02-07 F. T. L. Co., Ltd. Method for manufacturing semiconductor devices using heat-treatment vertical reactor with temperature zones
US5134963A (en) 1991-10-28 1992-08-04 International Business Machines Corporation LPCVD reactor for high efficiency, high uniformity deposition
US5332442A (en) * 1991-11-15 1994-07-26 Tokyo Electron Kabushiki Kaisha Surface processing apparatus
JP2763222B2 (ja) * 1991-12-13 1998-06-11 三菱電機株式会社 化学気相成長方法ならびにそのための化学気相成長処理システムおよび化学気相成長装置
JPH0697080A (ja) * 1992-09-10 1994-04-08 Mitsubishi Electric Corp 化学気相成長装置用反応室および該反応室を用いた化学気相成長装置
US5439524A (en) * 1993-04-05 1995-08-08 Vlsi Technology, Inc. Plasma processing apparatus
US5525160A (en) * 1993-05-10 1996-06-11 Tokyo Electron Kabushiki Kaisha Film deposition processing device having transparent support and transfer pins
KR950020993A (ko) * 1993-12-22 1995-07-26 김광호 반도체 제조장치
US5514246A (en) * 1994-06-02 1996-05-07 Micron Technology, Inc. Plasma reactors and method of cleaning a plasma reactor
JP3360098B2 (ja) * 1995-04-20 2002-12-24 東京エレクトロン株式会社 処理装置のシャワーヘッド構造
TW356554B (en) * 1995-10-23 1999-04-21 Watkins Johnson Co Gas injection system for semiconductor processing
US5825625A (en) 1996-05-20 1998-10-20 Hewlett-Packard Company Heat conductive substrate mounted in PC board for transferring heat from IC to heat sink
JPH09316644A (ja) * 1996-05-23 1997-12-09 Nippon Sanso Kk Cvd装置のシャワーヘッドノズル
US6013155A (en) * 1996-06-28 2000-01-11 Lam Research Corporation Gas injection system for plasma processing
US5976261A (en) * 1996-07-11 1999-11-02 Cvc Products, Inc. Multi-zone gas injection apparatus and method for microelectronics manufacturing equipment
US6090210A (en) 1996-07-24 2000-07-18 Applied Materials, Inc. Multi-zone gas flow control in a process chamber
TW415970B (en) 1997-01-08 2000-12-21 Ebara Corp Vapor-phase film growth apparatus and gas ejection head
US5937323A (en) * 1997-06-03 1999-08-10 Applied Materials, Inc. Sequencing of the recipe steps for the optimal low-k HDP-CVD processing
US6024799A (en) * 1997-07-11 2000-02-15 Applied Materials, Inc. Chemical vapor deposition manifold
JPH11297681A (ja) * 1998-04-07 1999-10-29 Mitsubishi Electric Corp 高誘電率薄膜形成用cvd装置および高誘電率薄膜の形成方法
KR100267885B1 (ko) 1998-05-18 2000-11-01 서성기 반도체 박막증착장치
TW582050B (en) * 1999-03-03 2004-04-01 Ebara Corp Apparatus and method for processing substrate
JP2000290777A (ja) * 1999-04-07 2000-10-17 Tokyo Electron Ltd ガス処理装置、バッフル部材、及びガス処理方法

Also Published As

Publication number Publication date
EP1167570B1 (de) 2008-11-19
JP3565799B2 (ja) 2004-09-15
ATE414803T1 (de) 2008-12-15
EP1167570A1 (de) 2002-01-02
US20020000196A1 (en) 2002-01-03
US6852168B2 (en) 2005-02-08
SG96224A1 (en) 2003-05-23
JP2002053965A (ja) 2002-02-19
KR20020000588A (ko) 2002-01-05
TW523785B (en) 2003-03-11
KR100332314B1 (ko) 2002-04-12

Similar Documents

Publication Publication Date Title
ATE414803T1 (de) Reaktor für die abscheidung eines dünnen films
US6183563B1 (en) Apparatus for depositing thin films on semiconductor wafers
JP4648408B2 (ja) ナノ加工のためのチャッキング・システム
US20110308464A1 (en) Substrate processing apparatus, method for processing substrate, and storage medium
WO2003012165A1 (en) Gas treating device and gas treating method
IL161550A (en) Apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces
JP2006523026A5 (de)
EP0959149A3 (de) Vorrichtung zur Ablagerung von Dünnfilmen
SG90250A1 (en) Apparatus and method for depositing thin film on wafer using atomic layer deposition
ATE268217T1 (de) Vorrichtung zum aufbringen von dünnen schichten
JPH03204955A (ja) 半導体ウェハーへのテープ貼付装置
JP2005328039A5 (de)
JP2004519089A5 (de)
EP1149936A3 (de) Plattierungssystem
EP1085107A3 (de) Gasverteilkopf und Verfahren
DE29507293U1 (de) Wasserbelüfter
EP0609069B1 (de) Verfahren und Vorrichtung zur Herstellung von Halbleitervorrichtungen
US6191035B1 (en) Recipe design to prevent tungsten (W) coating on wafer backside for those wafers with poly Si on wafer backside
JPS57149731A (en) Exposing device
JPS62287639A (ja) 薄板回路基板における感圧性粘着テ−プの貼着方法
KR102269348B1 (ko) 후면 증착 방지용 서셉터 및 이를 구비하는 증착 장치
US3958587A (en) Manifold for fluid distribution and removal
JP2000173927A (ja) 平行平板型cvd成膜装置及び成膜方法
KR100268912B1 (en) Method for etching of semiconductor device
CN218115599U (zh) 一种用于精细金属掩膜板的蚀刻装置

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee