DE60133092D1 - Örtliche erwärmung und kühlung von substraten - Google Patents
Örtliche erwärmung und kühlung von substratenInfo
- Publication number
- DE60133092D1 DE60133092D1 DE60133092T DE60133092T DE60133092D1 DE 60133092 D1 DE60133092 D1 DE 60133092D1 DE 60133092 T DE60133092 T DE 60133092T DE 60133092 T DE60133092 T DE 60133092T DE 60133092 D1 DE60133092 D1 DE 60133092D1
- Authority
- DE
- Germany
- Prior art keywords
- cooling
- gas
- wafer
- substrates
- local heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Non-Reversible Transmitting Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/527,873 US7037797B1 (en) | 2000-03-17 | 2000-03-17 | Localized heating and cooling of substrates |
US527873 | 2000-03-17 | ||
PCT/IB2001/000392 WO2001069656A2 (en) | 2000-03-17 | 2001-03-15 | Localized heating and cooling of substrates |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60133092D1 true DE60133092D1 (de) | 2008-04-17 |
DE60133092T2 DE60133092T2 (de) | 2009-02-19 |
Family
ID=24103294
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60133092T Expired - Lifetime DE60133092T2 (de) | 2000-03-17 | 2001-03-15 | Örtliche erwärmung und kühlung von substraten |
Country Status (8)
Country | Link |
---|---|
US (1) | US7037797B1 (de) |
EP (1) | EP1264333B1 (de) |
JP (1) | JP5511115B2 (de) |
KR (1) | KR100784580B1 (de) |
AT (1) | ATE388482T1 (de) |
DE (1) | DE60133092T2 (de) |
TW (1) | TW495813B (de) |
WO (1) | WO2001069656A2 (de) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6445202B1 (en) | 1999-06-30 | 2002-09-03 | Cascade Microtech, Inc. | Probe station thermal chuck with shielding for capacitive current |
US7355420B2 (en) | 2001-08-21 | 2008-04-08 | Cascade Microtech, Inc. | Membrane probing system |
JP2003307458A (ja) * | 2002-04-15 | 2003-10-31 | Akifumi Ito | 基材の温度測定方法および温度測定装置 |
US7427329B2 (en) | 2002-05-08 | 2008-09-23 | Asm International N.V. | Temperature control for single substrate semiconductor processing reactor |
US6843201B2 (en) | 2002-05-08 | 2005-01-18 | Asm International Nv | Temperature control for single substrate semiconductor processing reactor |
FR2846786B1 (fr) * | 2002-11-05 | 2005-06-17 | Procede de recuit thermique rapide de tranches a couronne | |
US20070128878A1 (en) * | 2003-03-03 | 2007-06-07 | Manabu Izumi | Substrate processing apparatus and method for producing a semiconductor device |
JP3910151B2 (ja) * | 2003-04-01 | 2007-04-25 | 東京エレクトロン株式会社 | 熱処理方法及び熱処理装置 |
US7492172B2 (en) | 2003-05-23 | 2009-02-17 | Cascade Microtech, Inc. | Chuck for holding a device under test |
US20060286807A1 (en) * | 2005-06-16 | 2006-12-21 | Jack Hwang | Use of active temperature control to provide emmisivity independent wafer temperature |
US20060004493A1 (en) * | 2004-06-30 | 2006-01-05 | Jack Hwang | Use of active temperature control to provide emmisivity independent wafer temperature |
TWI366234B (en) * | 2004-06-30 | 2012-06-11 | Intel Corp | Method, apparatus and system to control temperature of a wafer edge or wafer edge support during heating, and machine-readable medium having data therein |
JP2008512680A (ja) | 2004-09-13 | 2008-04-24 | カスケード マイクロテック インコーポレイテッド | 両面プロービング構造体 |
DE102005013831B4 (de) * | 2005-03-24 | 2008-10-16 | Siltronic Ag | Siliciumscheibe und Verfahren zur thermischen Behandlung einer Siliciumscheibe |
US7745762B2 (en) | 2005-06-01 | 2010-06-29 | Mattson Technology, Inc. | Optimizing the thermal budget during a pulsed heating process |
JP4870604B2 (ja) * | 2007-03-29 | 2012-02-08 | 株式会社ニューフレアテクノロジー | 気相成長装置 |
KR100870567B1 (ko) * | 2007-06-27 | 2008-11-27 | 삼성전자주식회사 | 플라즈마를 이용한 이온 도핑 방법 및 플라즈마 이온 도핑장치 |
JP5456257B2 (ja) * | 2008-01-08 | 2014-03-26 | 大日本スクリーン製造株式会社 | 熱処理装置 |
WO2010059247A2 (en) | 2008-11-21 | 2010-05-27 | Cascade Microtech, Inc. | Replaceable coupon for a probing apparatus |
US8490419B2 (en) * | 2009-08-20 | 2013-07-23 | United States Thermoelectric Consortium | Interlocked jets cooling method and apparatus |
US20110155058A1 (en) * | 2009-12-18 | 2011-06-30 | Applied Materials, Inc. | Substrate processing apparatus having a radiant cavity |
JP5982758B2 (ja) * | 2011-02-23 | 2016-08-31 | 東京エレクトロン株式会社 | マイクロ波照射装置 |
US20120225203A1 (en) * | 2011-03-01 | 2012-09-06 | Applied Materials, Inc. | Apparatus and Process for Atomic Layer Deposition |
DE102012101923B4 (de) * | 2012-03-07 | 2019-11-07 | Osram Opto Semiconductors Gmbh | Substratträgeranordnung, Beschichtungsanlage mit Substratträgeranordnung und Verfahren zur Durchführung eines Beschichtungsverfahrens |
DE102012205616B4 (de) * | 2012-04-04 | 2016-07-14 | Siltronic Ag | Vorrichtung zum Abscheiden einer Schicht auf einer Halbleiterscheibe mittels Gasphasenabscheidung |
KR20150097715A (ko) * | 2012-12-17 | 2015-08-26 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치를 위한 기판 지지체 및 리소그래피 장치 |
WO2014174803A1 (ja) * | 2013-04-22 | 2014-10-30 | パナソニック株式会社 | El表示装置の製造方法 |
US9511549B2 (en) | 2014-06-02 | 2016-12-06 | Toyota Motor Engineering & Manufacturing North America, Inc. | Anisotropic thermal energy guiding shells and methods for fabricating thermal energy guiding shells |
US10458962B2 (en) | 2016-07-22 | 2019-10-29 | Pulmostics Limited | Temperature control for surface acoustic wave sensor |
US11127607B2 (en) * | 2019-11-11 | 2021-09-21 | Xia Tai Xin Semiconductor (Qing Dao) Ltd. | Heat processing system |
CN113234914B (zh) * | 2021-04-16 | 2022-07-19 | 北京钢研高纳科技股份有限公司 | 基于加热气体精确控温的梯度热处理炉及热处理方法 |
Family Cites Families (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3862397A (en) | 1972-03-24 | 1975-01-21 | Applied Materials Tech | Cool wall radiantly heated reactor |
JPS62282437A (ja) * | 1986-05-31 | 1987-12-08 | Shinku Riko Kk | 半導体ウエハ処理用急速加熱冷却装置 |
JPS63124528A (ja) * | 1986-11-14 | 1988-05-28 | Hitachi Ltd | 半導体製造装置 |
US5228501A (en) | 1986-12-19 | 1993-07-20 | Applied Materials, Inc. | Physical vapor deposition clamping mechanism and heater/cooler |
JPS63291419A (ja) | 1987-05-24 | 1988-11-29 | Tatsumo Kk | 加熱処理装置 |
US4836138A (en) | 1987-06-18 | 1989-06-06 | Epsilon Technology, Inc. | Heating system for reaction chamber of chemical vapor deposition equipment |
JPH0623935B2 (ja) * | 1988-02-09 | 1994-03-30 | 大日本スクリーン製造株式会社 | 再現性を高めた熱処理制御方法 |
US4914276A (en) | 1988-05-12 | 1990-04-03 | Princeton Scientific Enterprises, Inc. | Efficient high temperature radiant furnace |
US5160545A (en) | 1989-02-03 | 1992-11-03 | Applied Materials, Inc. | Method and apparatus for epitaxial deposition |
ES2054357T3 (es) | 1989-05-08 | 1994-08-01 | Philips Nv | Aparato y metodo para tratar substratos planos bajo una presion reducida. |
DE3915039A1 (de) * | 1989-05-08 | 1990-11-15 | Balzers Hochvakuum | Hubtisch |
JPH02301173A (ja) | 1989-05-16 | 1990-12-13 | Tokin Corp | 圧電磁器組成物 |
US5002010A (en) | 1989-10-18 | 1991-03-26 | Varian Associates, Inc. | Vacuum vessel |
EP0511294B1 (de) | 1990-01-19 | 1996-04-03 | Applied Materials, Inc. | Vorrichtung zum erwärmen von halbleiterscheiben oder -substraten |
US5252366A (en) | 1990-01-24 | 1993-10-12 | The United States Of America As Represented By The Secretary Of The Air Force | Chemical vapor deposition method using an actively cooled effuser to coat a substrate having a heated surface layer |
US5129360A (en) | 1990-01-24 | 1992-07-14 | The United States Of America As Represented By The Secretary Of The Air Force | Actively cooled effusion cell for chemical vapor deposition |
US5108792A (en) | 1990-03-09 | 1992-04-28 | Applied Materials, Inc. | Double-dome reactor for semiconductor processing |
KR940011708B1 (ko) | 1990-04-09 | 1994-12-23 | 니찌덴 아네루바 가부시끼가이샤 | 기판온도제어기구 |
JPH045822A (ja) * | 1990-04-23 | 1992-01-09 | Sumitomo Electric Ind Ltd | ランプアニール装置および方法 |
US5673750A (en) | 1990-05-19 | 1997-10-07 | Hitachi, Ltd. | Vacuum processing method and apparatus |
JPH04266015A (ja) * | 1991-02-21 | 1992-09-22 | Fuji Electric Co Ltd | 水素化非晶質シリコン膜の作成方法 |
US5199483A (en) | 1991-05-15 | 1993-04-06 | Applied Materials, Inc. | Method and apparatus for cooling wafers |
US5436172A (en) * | 1991-05-20 | 1995-07-25 | Texas Instruments Incorporated | Real-time multi-zone semiconductor wafer temperature and process uniformity control system |
US5449883A (en) | 1992-08-07 | 1995-09-12 | Mitsubishi Materials Corporation | Continuous heat treatment system of semiconductor wafers for eliminating thermal donor |
JP3380988B2 (ja) | 1993-04-21 | 2003-02-24 | 東京エレクトロン株式会社 | 熱処理装置 |
JPH09506744A (ja) | 1993-12-17 | 1997-06-30 | ブルックス オートメーション インコーポレイテッド | ウェハの加熱冷却装置 |
JP3234091B2 (ja) | 1994-03-10 | 2001-12-04 | 株式会社日立製作所 | 表面処理装置 |
US5431700A (en) | 1994-03-30 | 1995-07-11 | Fsi International, Inc. | Vertical multi-process bake/chill apparatus |
JPH0845909A (ja) * | 1994-07-26 | 1996-02-16 | Sony Corp | 試料台 |
JPH08191059A (ja) * | 1995-01-09 | 1996-07-23 | Hitachi Ltd | プラズマ処理装置 |
JP3288200B2 (ja) | 1995-06-09 | 2002-06-04 | 東京エレクトロン株式会社 | 真空処理装置 |
US6239038B1 (en) * | 1995-10-13 | 2001-05-29 | Ziying Wen | Method for chemical processing semiconductor wafers |
US5881208A (en) * | 1995-12-20 | 1999-03-09 | Sematech, Inc. | Heater and temperature sensor array for rapid thermal processing thermal core |
US5851929A (en) * | 1996-01-04 | 1998-12-22 | Micron Technology, Inc. | Controlling semiconductor structural warpage in rapid thermal processing by selective and dynamic control of a heating source |
US6209480B1 (en) * | 1996-07-10 | 2001-04-03 | Mehrdad M. Moslehi | Hermetically-sealed inductively-coupled plasma source structure and method of use |
US5846375A (en) | 1996-09-26 | 1998-12-08 | Micron Technology, Inc. | Area specific temperature control for electrode plates and chucks used in semiconductor processing equipment |
US6027244A (en) * | 1997-07-24 | 2000-02-22 | Steag Rtp Systems, Inc. | Apparatus for determining the temperature of a semi-transparent radiating body |
US5814365A (en) | 1997-08-15 | 1998-09-29 | Micro C Technologies, Inc. | Reactor and method of processing a semiconductor substate |
US6018616A (en) | 1998-02-23 | 2000-01-25 | Applied Materials, Inc. | Thermal cycling module and process using radiant heat |
US6105274A (en) | 1999-03-18 | 2000-08-22 | International Business Machines Corporation | Cryogenic/phase change cooling for rapid thermal process systems |
US6100506A (en) * | 1999-07-26 | 2000-08-08 | International Business Machines Corporation | Hot plate with in situ surface temperature adjustment |
-
2000
- 2000-03-17 US US09/527,873 patent/US7037797B1/en not_active Expired - Lifetime
-
2001
- 2001-03-15 WO PCT/IB2001/000392 patent/WO2001069656A2/en active IP Right Grant
- 2001-03-15 KR KR1020027012183A patent/KR100784580B1/ko active IP Right Grant
- 2001-03-15 EP EP01912062A patent/EP1264333B1/de not_active Expired - Lifetime
- 2001-03-15 AT AT01912062T patent/ATE388482T1/de not_active IP Right Cessation
- 2001-03-15 JP JP2001567023A patent/JP5511115B2/ja not_active Expired - Fee Related
- 2001-03-15 DE DE60133092T patent/DE60133092T2/de not_active Expired - Lifetime
- 2001-06-04 TW TW090106205A patent/TW495813B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
WO2001069656A3 (en) | 2002-03-14 |
DE60133092T2 (de) | 2009-02-19 |
WO2001069656A2 (en) | 2001-09-20 |
KR20030007466A (ko) | 2003-01-23 |
KR100784580B1 (ko) | 2007-12-10 |
ATE388482T1 (de) | 2008-03-15 |
US7037797B1 (en) | 2006-05-02 |
EP1264333A2 (de) | 2002-12-11 |
EP1264333B1 (de) | 2008-03-05 |
JP5511115B2 (ja) | 2014-06-04 |
TW495813B (en) | 2002-07-21 |
JP2003526940A (ja) | 2003-09-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |